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DB3 , DB4 , DB31 , DB32
Ø 1.9
±0.1
62.5
±3
3.9
±0.4
Ø max 0.5
Type
Version 2012-07-03
DB3 , DB4 , DB31 , DB32
Bidirectional Si-Trigger-Diodes (DIAC)
Bidirektionale Si-Triggerdioden (DIAC)
Breakover voltage
28 ... 45 V
Durchbruchspannung
Peak pulse current
± 2 A
Max. Triggerimpuls
Glass case
Glas-Gehäuse
Weight approx.
~ DO-35
~ SOD-27
0.13 g
Gewicht ca.
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Dimensions - Maße [mm]
Maximum ratings Grenzwerte
Power dissipation
TA = 50°C P
tot
150 mW 1)
Verlustleistung
Peak pulse current (120 Hz pulse repetition rate)
tp ≤ 10 µs I
PM
± 2 A 1)
Max. Triggerstrom (120 Hz Puls-Wiederholrate)
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
Characteristics Kennwerte
Breakover voltage
Durchbruchspannung
Breakover current – Durchbruchstrom V = 98% V
Asymmetry of breakover voltage
dV/dt = 10 V/µs DB3
DB31
DB32
DB4
|V
(BO)F
– V
BO
| ΔV
(BO)R
V
BO
V
BO
V
BO
V
BO
I
BO
BO
Unsymmetrie der Durchbruchspannung
Foldback voltage – Spannungs-Rücksprung
dV/dt = 10 V/µs ΔV
F/R
ΔI = IBO to/auf IF = 10 mA
Thermal resistance junction to ambient air
R
thA
Wärmewiderstand Sperrschicht – umgebende Luft
-50...+100°C
-50...+175°C
28 ... 36 V
30 ... 34 V
32 ... 36 V
35 ... 45 V
< 200 µA
< 3.8 V
> 5 V
< 300 K/W 1)
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG http://www.diotec.com/ 1
Page 2
DB3 , DB4 , DB31 , DB32
2 http://www.diotec.com/ © Diotec Semiconductor AG
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