Datasheet DB-2933-54 Datasheet (ST)

Page 1
查询DB-2933-54供应商
General feature
■ Excellent thermal stability
■ Frequency: 1.6 - 54MHz
■ Output power: 400W typ.
■ Input power 10W max.
■ Efficiency: 57% - 76%
■ IMD at 300WPEP < -26dBc
■ Load mismatch: 3:1all phases
DB-2933-54
RF POWER amplifier using 2 x SD2933
N-Channel enhancement-mode lateral MOSFETs
Description
The DB-2933-54 is a RF broadband power amplifier intended for linear or nonlinear operation over the band 1.6 to 54 MHz using 2x SD2933 gold metallized N-channel MOS field-effect transistors. The temperature compensating biasing circuit supports class B and class AB operation.
DB-2933-54 is designed in cooperation with Specific RF Devices.
Order Code
■ DB-2933-54
October 2006 Rev 1 1/13
www.st.com
13
Page 2
Contents DB-2933-54
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Photos of DB-2933-54 amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 DB-2933-54 class of operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 SD2933 mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.1 Mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.2 Mounting sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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DB-2933-54 Electrical data
1 Electrical data
1.1 Maximum ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
P
IN
P
OUT
(1)
V
DD
V
GG
I
DD
P
DISS
1. VGG from 9 to 15V and PIN < 16W
Input power 16 W
Output power 500 W
Drain supply voltage 50 V
Gate biasing voltage 15 V
Drain current 20 A
Power dissipation 400 W
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Electrical characteristics DB-2933-54
2 Electrical characteristics
TA = +25 oC, VDD = 48V, I
= 2 x 900mA
DQ
Table 2. Electrical Specification
Symbol Test Conditions Min Typ Max Unit
Freq Frequency range 1.6 54 MHz
P
OUT
Gain P
ND P
H2 2
H3 3
VSWR Load mismatch all phases @ P
PIN = 10W 300 400 W
= 10W 16.2 ± 0.6dB dB
IN
= 10W 57 - 76 %
IN
ND
Harmonic @ P
RD
Harmonic @ P
= 300W -26 / -49 dBc
OUT
= 300W -13 / -58 dBc
OUT
= 300W 3:1
OUT
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Page 5
DB-2933-54 Typical performance
y
(
)
O
(
)
Efficiency (% )
600
O
t
t
P
(W )
3 Typical performance
Figure 1. Output power & efficiency
60
59
58
57
56
55
54
53
Output Power (dBm )
52
51
50
vs frequency
- eff
- Pout
V dd =
40V
Idq = 2x
0 5 10 15 20 25 30 35 40 45 50 55 60 65
Frequenc y (M Hz)
mA
90
Pin = 10W
Figure 2. Output power & efficiency
vs frequency
100
90
80
70
60
50
40
30
20
10
0
60
59
58
57
%
dBm
56
55
54
Efficienc
utput Power
53
52
51
50
0 5 10 15 20 25 30 35 40 45 50 55 60 65
- eff
- Pout
Frequency (M Hz)
V dd =
Idq = 2x
Pin = 10W
48V
900
mA
100
90
80
70
60
50
40
30
20
10
0
Figure 3. IMD vs frequency Figure 4. Output power vs drain voltage
0
-5
-10
-15
-20
IM D (dBc)
-25
-30
-35
-40
0 5 10 15 20 25 30 35 40 45 50 55 60 65
IM D
Frequency (M H z)
Vdd =
48V
Idq = 2x
900
Pout = 300 WPEP
mA
500
400
ower
300
pu
200
u
100
0
10 14 18 22 26 30 34 38 42 46 50
Pin = 10W
Idq = 2x
1.6 M H z 5 M Hz 10 M Hz 20 M Hz
28 M Hz 40 M Hz 60 M Hz
mA
900
Drain vo ltage (V)
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Typical performance DB-2933-54
P
Figure 5. Harmonics vs frequency
0
Vdd =
-10
-20
Idq = 2x
Pout = 300 WPE
48V
900
mA
-30
-40
-50
Harmoni cs (dBc)
-60
-70
0 5 10 15 20 25 30 35 40 45 50 55 60 65
H2 H3
Frequency (MHz)
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Page 7
DB-2933-54 Photos of DB-2933-54 amplifier
4 Photos of DB-2933-54 amplifier
Figure 6. Top view
Figure 7. Side view
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Page 8
DB-2933-54 class of operation DB-2933-54
5 DB-2933-54 class of operation
● class B : a low bias point with ~100mA per transistor
● class AB : a higher bias point with ~ 900mA per transistor
To select a bias point, DB-2933-54 has a control port “BIAS”.
● The bias point is 2x 100 mA if “BIAS” is left open and in this case a DC voltage of ~5V
is present
● The bias point is 2 x 900 mA if “BIAS” is connected to ground.
"PA_ON" control port / ON-OFF bias current
● To switch-on biasing circuit, connect “PA_ON” to ground.
● To switch-off biasing circuit, left open “PA_ON”
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Page 9
DB-2933-54 SD2933 mounting recommendations
6 SD2933 mounting recommendations
6.1 Mounting recommendations
● Ensure holes in heatsinks are free from burrs;
● Minimum depth of tapped holes in heatsinks is 6 mm;
● Use 4-40 UNC-2A cheese-head screws with a flat washer to spread the joint pressure;
● The minimum flatness of the mounting area is 0.02 mm;
● Mounting area roughness should be less than 0.5 µm (micro);
● Avoid, as much as possible, use of flux or flux solutions because flux can penetrate
even when hermetically sealed ceramic-capped transistors. Tin and wash the printed­circuit board BEFORE mounting the power transistors, then solder the transistor leads without using flux;
● Transistor leads may be tinned by dipping them full-length into a solder bath at a
temperature of about 230°C. No flux should be used during tinning;
● Recommended heatsink compounds : WPSII (silicon free) from Austerlitz Electronics,
340 from Dow Corning etc.
6.2 Mounting sequence
● Apply a thin layer of evenly distributed heatsink compound to the flange;
● Position the device with flat washers in place;
● Tighten the screws until finger tight (0.05 Nm);
● Further tighten the screws until the specified torque is reached;
● For M174, M177 & M244 type of packages, torque should be minimum 0.6 Nm and
0.75 Nm max.
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SD2933 mounting recommendations DB-2933-54
Table 3. DMOS Packages - List of materials
Package
Typ e
M174
M174 (Moly
disk)
M177
M244
Description Flange Leadframe
0.500 DIA 4L NON
HERM
W/FLANGE
0.500 DIA 4L NON
HERM
W/FLANGE
(MOLY
DISK)
0.550 DIA 4L NON
HERM
W/FLANGE
2x
0.400x0.425 WIDE 2L LAP N/H FLANGE
Cu
Cu-Mo-
Cu
Cu-Mo-
Cu
(85%) -
Cu
(15%)
W
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
Ceramic
insulator
BeO
(99.5%
min)
BeO
(99.5%
min)
BeO
(99.5%
min)
BeO(99.5
% min)
Plating Torque (Nm)
Leads Flange Min Max
Au (100µ min) over
Ni (100µ min /
350µ max)
Au (100µ min) over
Ni (100µ min /
350µ max)
Au (60µ min) over
Ni (100µ min /
350µ max)
Au (60µ min) over
Ni (100µ min /
350µ max)
Ni(100µ min) + Pd
(10µ min)
Ni(100µ min) + Pd
(10µ min)
Au (100µ min)
over Ni (100µ min
/ 350µ max)
Au (60µ min) over
Ni (100µ min /
350µ max)
0.6 0.75
0.6 0.75
0.6 0.75
0.6 0.75
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DB-2933-54 Package mechanical data
7 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
11/13
Page 12
Revision history DB-2933-54
8 Revision history
Table 4. Revision history
Date Revision Changes
19-Oct-2006 1 Initial release
12/13
Page 13
DB-2933-54
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