Page 1
Data Sheet
Switching Diode
DAN202U
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Small mold type (UMD3).
2) High reliability.
2.0±0.2
0.3±0.1
各リードとも
Each lead has same dimension
同寸法
(3)
0.15±0.05
0.9MIN.
1.3
0.65
1.6
2.1±0.1
1.25±0.1
(2) (1)
（0.65）
Construction Structure
Silicon epitaxial planar
（0.65）
1.3±0.1
0.7±0.1
0.9±0.1
0～0.1
0.1Min
UMD3
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
φ1.55±0.05
2.4±0.1
5.5±0.2
φ0.5±0.05
4.0±0.1
2.25±0.1
0
2.0±0.05
Absolute maximum ratings (Ta=25°C)
Parameter Limits
Reverse voltage (repetitive peak) 80
Reverse voltage (DC) 80
Forward current (Single) 300
Average rectified forward current (Single)
Surge current (t=1us) 4
Power dissipation 200
Junction temperature 150
Storage temperature
Symbol Unit
V
RM
V
R
I
FM
Io mA
I
surge
100
V
V
mA
A
Pd mW
Tj °C
Tstg °C
55 to 150
0.8MIN
1.75±0.1
3.5±0.05
0～0.1
0.3±0.1
8.0±0.2
2.4±0.1
1.25±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
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V
F
I
R
- - 1.2 V
- - 0.1 μA
Ct - - 3.5 pF
trr - - 4 ns
1/2
I
=100mA
F
V
=70V
R
V
=6V , f=1MHz
R
VR=6V , IF=5mA , RL=50Ω
2011.06 - Rev.A
Page 2
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN202U
100
10
1
FORWARD CURRENT:IF(mA)
0.1
950
940
930
920
910
FORWARD VOLTAGE:VF(mV)
900
Ta=150℃
0 100 200 300 400 500 600 700 80 0 900 1 00
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=75℃
Ta=125℃
AVE:921.7mV
Ta=25℃
Ta=-25℃
Ta=25℃
IF=100mA
n=30pcs
10000
1000
100
10
1
REVERSE CURRENT:IR(nA)
0.1
0.01
0
0 1020304050607080
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
90
80
70
60
50
40
30
20
REVERSE CURRENT:IR(nA)
10
0
Ta=150℃
AVE:9.655nA
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
VR=80V
n=10pcs
10
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0 5 10 15 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
CAPACITANCE BETWEEN
1
0
AVE:1.17pF
f=1MHz
Ta=25℃
VR=6V
f=1MHz
n=10pcs
VF DISPERSION MAP
20
15
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
IFSM DISRESION MAP
100
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1
0.1 1 10 100
IFSM-t CHARACTERISTICS
Ifsm
AVE:3.50A
Ifsm
TIME:t(ms)
8.3ms
IR DISPERSION MAP
10
1ms
300us
time
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
Rth(j-a)
Rth(j-c)
1cyc
t
9
8
7
6
5
4
3
2
1
REVERSE RECOVERY TIME:trr(ns)
0
1000
100
TRANSIENT
10
THAERMAL IMPEDANCE:Rth (℃/W)
1
0.001 0.01 0.1 1 10 100 1000
AVE:1.93ns
trr DISPERSION MAP
Mounted on epoxy board
IM=1mA IF=10mA
TIME:t(s)
Rth-t CHARACTERISTICS
5
4
3
2
PEAK SURGE
1
FORWARD CURRENT:IFSM(A)
0
110100
10
9
8
7
6
5
4
3
ELECTROSTATIC
2
DDISCHARGE TEST ESD(KV)
1
0
Ct DISPERSION MAP
Ifsm
8.3ms
8.3ms
1cyc
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
AVE:2.54kV
AVE:0.97kV
C=200pF
R=0Ω
ESD DISPERSION MAP
C=100pF
R=1.5kΩ
2/2
2011.06 - Rev.A
Page 3
Notes
Notice
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R1120A
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