Datasheet DAN202K Specification

Data Sheet

Switching Diode

DAN202K

Applications Dimensions (Unit : mm) Land size figure (Unit : mm)

Ultra high speed switching

0.8MIN.

2.9±0.2
各リードとも

Each lead has same dimension

＋0.1

同寸法

0.4

Features

1) Small mold type. (SMD3)

　－0.05

(3)

2) High reliability

＋0.2

－0.1

2.8±0.2

1.6

(2) (1)

Construction

Silicon epitaxial planar Structure

0.95 0.95

1.9±0.2

＋0.1

0.15

－0.06

0～0.1

0.8±0.1

1.1±0.2

0.01

ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59

week code

1.0MIN.

SMD3

0.3～0.6

0.95

1.9

2.4

Taping specifications (Unit : mm)

4.0±0.1

3.2±0.1

2.0±0.05

Absolute maximum ratings (Ta=25°C)

Parameter Limits

Reverse voltage (repatitive peak)

Reverse voltage (DC) 80
Forward current (Single) 300
Forward current (Double) 450

Average rectified forward current (Single)

Average rectified forward current (double)

Surge current (t=1us) (Single) 4
Surge current (t=1us) (Double) 6
Power dissipation 200
Junction temperature 150
Storage temperature

Symbol Unit

V

RM

V

R

I

FM

I

FM

Io mA
Io mA

I

surge

I

surge

80

100
150

Pd mW

Tj °C

Tstg °C

55 to 150

4.0±0.1

φ1.5±0 .1
　　　　　 0

V

V
mA
mA

A

A

φ1.05MIN

0.3±0.1

1.75±0.1

3.5±0.05

8.0±0.2

3.2±0.1

5.5±0.2

0～0.5

3.2±0.1

1.35±0.1

Electrical characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

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V

F

I

R

- - 1.2 V

- - 0.1 μA
Ct - - 3.5 pF
trr - - 4 ns

1/2

ConditionsParameter

I

=100mA

F

V

=70V

R

V

=6V , f=1MHz

R

VR=6V , IF=5mA , RL=50Ω

2011.06 - Rev.C

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

DAN202K

t

100

10

Ta=150℃

1

FORWARD CURRENT:IF(mA)

0.1

0 100 200 300 400 500 600 700 800 900 1000

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

950

940

930

920

910

FORWARD VOLTAGE:VF(mV)

900

Ta=75℃

Ta=125℃

AVE:921.7m

Ta=25℃

Ta=-25℃

Ta=25℃

IF=100mA

n=30pcs

10000

1000

100

10

1

REVERSE CURRENT:IR(nA)

0.1

0.01
0 1020304050607080

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

100

90

80

70

60

50

40

30

20

REVERSE CURRENT:IR(nA)

10

0

Ta=150℃

Ta=75℃

Ta=25℃

Ta=-25℃

AVE:9.655nA

Ta=125℃

Ta=25℃
VR=80V
n=30pcs

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0 5 10 15 20

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

10

9

8

7

6

5

4

AVE:1.17pF

CAPACITANCE BETWEEN

3

TERMINALS:Ct(pF)

2

1

0

f=1MHz

Ta=25℃

VR=6V

f=1MHz

n=10pcs

VF DISPERSION MAP

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

IFSM DISPERSION MAP

100

10

PEAK SURGE

FORWARD CURRENT:IFSM(A)

1

0.1 1 10 100

IFSM-t CHARACTERISTICS

Ifsm

AVE:3.50A

TIME:t(ms)

Ifsm

8.3ms

1cyc

IR DISPERSION MAP

10

9

8

7

6

5

4

3

2

1

REVERSE RECOVERY TIME:trr(ns)

0

1000

100

TRANSIENT

10

THAERMAL IMPEDANCE:Rth (℃/W)

1

0.001 0.01 0.1 1 10 100 1000

AVE:1.93ns

trr DISPERSION MAP

Mounted on epoxy board

IM=100mA IF=10A

time

1ms

300us

TIME:t(ms)

Rth-t CHARACTERISTICS

Ta=25℃

VR=6V

IF=5mA
RL=50Ω
n=10pcs

Rth(j-a)

Rth(j-c)

Ct DISPERSION MAP

5

4

3

2

PEAK SURGE

1

FORWARD CURRENT:IFSM(A)

0

110100

IFSM-CYCLE CHARACTERISTICS

10

9

8

7

6

5

4

3

ELECTROSTATIC

DISCHARGE TEST ESD(KV)

AVE:0.97kV

2

1

0

Ifsm

NUMBER OF CYCLES

AVE:2.54kV

C=200pF

R=0Ω

ESD DISPERSION MAP

8.3ms
1cyc

C=100pF

R=1.5kΩ

8.3ms

2/2

2011.06 - Rev.C

Notes

Notice

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