Page 1
r
r
r
Elektronische Bauelemente
FEATURES
Audio amplifier
Flash unit of camera
Switching circuit
CLASSIFICATION OF h
Rank R T V
Range 340 - 600 560 - 950 900 - 2000
FE(2)
D965
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
NPN General Purpose Transistor
TO-92
G
K
H
J
A
D
B
CE
F
REF.
A 4.40 4.70
B 4.30 4.70
C12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G1.27 TYP.
H1.10 J 2.42 2.66
K 0.36 0.76
Emitte
Collector
Base
Millimete
Min. Max.
Collector
Base
Emitte
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Collector - Base Voltage V
Collector - Emitter Voltage V
Emitter - Base Voltage V
Collector Current -Continuous IC 5
Cpllector Power Dissipation PC 750 mW
Junction, Storage Temperature TJ, T
= 25°C unless otherwise specified)
a
42 V
CBO
22 V
CEO
6 V
EBO
A
+150, -55 ~ +150 °C
STG
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector - Base Breakdown Voltage V
Collector - Emitter Breakdown Voltage V
Emitter - Base Breakdown Voltage V
Collector Cut - Off Current I
Emitter Cut - Off Current I
DC Current Gain
Collector - Emitter Saturation Voltage V
Transition Frequency f T - 150 - MHz VCE = 6V, IC = 50 mA, f = 30MHz
(T
= 25°C unless otherwise specified)
a
42 - - V IC = 0.1mA, IE = 0
(BR)CBO
22 - - V IC = 1 mA, IB = 0
(BR)CEO
6 - - V IE = 10 μA, IC = 0
(BR)EBO
- - 0.1 A VCB = 30V, IE = 0
CBO
- - 0.1 A VEB = 6V, IC = 0
EBO
150 - - VCE = 2V, IC = 0.15 mA
h
FE(1)
h
340 - 2000 VCE = 2V, IC = 500 mA
FE(2)
h
150 - - VCE = 2V, IC = 2A
FE(3)
- - 0.35 V IC = 3000mA, IB = 100 mA
CE(sat)
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Nov-2010 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
D965
NPN General Purpose Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
17-Nov-2010 Rev. A Page 2 of 2
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