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r
Elektronische Bauelemente
FEATURES
Power Dissipation
CLASSIFICATION OF h
Rank R 0
Range
60-120
FE
100-200
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Y GR
160-320 200-400
NPN Plastic Encapsulated Transistor
G
D882S
TO-92
H
J
A
K
D
B
CE
F
Emitter
Millimete
REF.
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 J 2.42 2.66
K 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current - Continuous IC 3 A
Collector Power Dissipation PC 625 mW
Junction, Storage Temperature TJ, T
= 25°C unless otherwise specified)
A
40 V
CBO
30 V
CEO
6 V
EBO
150, -55~150 °C
STG
Collector
Base
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 60 - 400 VCE=2 V, IC=1 A
Collector to Emitter Saturation Voltage V
Base to Emitter Saturation Voltage V
Transition Frequency fT 50 - - MHz VCE = 5 V, IC = 0.1 A, f=10 MHz
= 25°C unless otherwise specified)
A
40 - - V IC=100 μA, IE = 0 A
(BR)CBO
30 - - V IC=10 mA, IB = 0 A
(BR)CEO
6 - - V IE=100 μA, IC = 0A
(BR)EBO
- - 1 μA VCB=40 V, IE = 0 A
CBO
- - 10 μA VCE=30 V, IB = 0 A
CEO
- - 1 μA VEB=6 V, IC =0 A
EBO
- - 0.5 V IC=2 A, IB=0.2 A
CE(sat)
- - 1.5 V IC=2 A, IB=0.2 A
BE(sat)
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
08-Oct-2010 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
D882S
NPN Plastic Encapsulated Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
08-Oct-2010 Rev. A Page 2 of 2
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