Page 1
TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 3 A
Collector Power Dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
SOT-89
1.
BASE
2. COLLECTOR
3.
EMITTER
D882
1
2
3
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
V
V
IC = 100μA, IE=0 40 V
(BR)CBO
IC = 10mA, IB=0 30 V
(BR)CEO
IE= 100μA, IC=0 6 V
(BR)EBO
VCB= 40V, IE=0 1 µA
I
CBO
VCE= 30V, IB=0 10 µA
I
CEO
VEB= 6V, IC=0 1 µA
I
EBO
h
VCE=2V, IC= 1A 60 400
FE(1)
VCE=2V, IC= 100mA 32
h
FE(2)
V
IC= 2A, IB= 0.2 A 0.5 V
CE(sat)
IC= 2A, IB= 0.2 A 1.5 V
V
BE(sat)
= 5V , Ic=0.1A
V
fT
CE
f =10MHz
50 MHz
CLASSIFICATION OF h
Rank
FE(1)
R O Y GR
Range
１
JinYu
semiconductor
60-120 100-200 160-320 200-400
www.htsemi.com
Ｄａｔｅ：２０１１／０５
Page 2
Typical characteristics
D882
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
Loading...