Page 1
1
Motorola Bipolar Power Transistor Device Data
. . . for general purpose driver or medium power output stages in CW or switching
applications.
• Low Collector–Emitter Saturation Voltage — 0.5 V (Max)
• High ft for Good Frequency Response
• Low Leakage Current
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
80
Vdc
Collector–Emitter Voltage
VCES
90
Vdc
Emitter Base Voltage
V
EB
5.0
Vdc
Collector Current — Continuous
Peak (1)
I
C
4.0
6.0
Adc
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TA = 25_C
P
D
30
1.67
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ, T
stg
–55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
4.2
_
C/W
Thermal Resistance, Junction to Ambient
R
θJA
75
_
C/W
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
T
L
275
_
C
(1) Pulse Width v 6.0 ms, Duty Cycle v 50%.
ELECTRICAL CHARACTERISTICS (T
J
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
(VCE = 1.0 Vdc, IC = 1.0 Adc)
(VCE = 1.0 Vdc, IC = 2.0 Adc)
h
FE
40
20
20
120
—
—
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
—
SEMICONDUCTOR TECHNICAL DATA
Order this document
by D45C/D
Motorola, Inc. 1995
4.0 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
CASE 221A–06
TO–220AB
(REPLACES D44C)
Page 2
D45C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = Rated V
CES
, VBE = 0)
I
CES
—
—
0.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µA
Emitter Cutoff Current
(VEB = 5.0 Vdc)
I
EBO
—
—
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µA
ON CHARACTERISTICS
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 50 mAdc)
V
CE(sat)
—
0.135
0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
V
BE(sat)
—
0.85
1.3
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
C
cb
—
125
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Gain Bandwidth Product
(IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)
f
T
—
40
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 1.0 Adc, IB1 = 0.1 Adc)
td + t
r
—
50
75
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
Storage Time
(IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
t
s
—
350
550
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
Fall Time
(IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
t
f
—
50
75
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
200
0.04
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
20
0.07 0.1 0.2 0.3 1.0 2.0 4.0
70
50
40
30
80
60
h
FE
, DC CURRENT GAIN
0.4 0.7
100
VCE = 1.0 Vdc
TJ = 25
°
C
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.01
I
C
, COLLECTOR CURRENT (AMPS)
dc
1.0 µs
2.0
0.1 ms
10 20 100
0.2
5.0
TC ≤ 70°C
DUTY CYCLE
≤
50%
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
90
3.0
1.0 ms
10 µs
0.02
0.03
0.05
0.3
0.1
0.5
2.0
3.0
5.0
3.0 7.0 30 50 70
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Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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Motorola Bipolar Power Transistor Device Data
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D45C/D
*D45C/D*
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