Page 1
MECHANICAL DATA
Dimensions in mm.
TetraFET
D2081UK
METAL GATE RF SILICON FET
GOLD METALLISED
0.32
0.24
0.10
0.02
16˚
max
.
1.70
max
.
10˚
max
.
6.7
6.3
3.1
2.9
4
123
13˚
3.7
3.3
7.3
6.7
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 12V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 11dB MINIMUM
rss
1.05
0.85
PIN 1 GATE PIN 2 DRAIN
PIN 3 SOURCE PIN 4 DRAIN
2.30
4.60
SOT–223
0.80
0.60
ABSOLUTE MAXIMUM RATINGS (T
P
D
BV
BV
I
D(sat)
T
stg
T
j
DSS
GSS
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
• SURFACE MOUNT
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
= 25°C unless otherwise stated)
case
2W
65V
±20V
200mA
–65 to 125°C
150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Page 2
D2081UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
BV
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Drain–Source
DSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS= 0 |D= 10mA
VDS= 28V VGS= 0
VGS= 20V VDS= 0
ID= 10mA VDS= V
VDS= 10V ID= 0.2A
PO= 750mW
VDS= 12V IDQ= 75mA
f = 1GHz
VDS= 0V VGS= –5V f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
VDS= 28V VGS= 0 f = 1MHz
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case Max. 70°C / W
GS
65
1
1
17
0.18
11
40
10:1
12
6
0.5
V
mA
µA
V
mhos
dB
%
—
pF
S Parameters at Vd= 12V, Id= 75mA
Freq S11 S12 S21 S22
MHz mag ang mag ang mag ang mag ang
300 0.47 -95 0.04 50 5.20 90 0.32 -90
400 0.46 -120 0.05 80 4.40 76 0.35 -91
500 0.47 -131 0.07 100 3.50 68 0.38 -94
600 0.49 -146 0.10 110 3.00 59 0.43 -98
700 0.51 -156 0.15 110 2.60 51 0.48 -103
800 0.53 -163 0.20 104 2.30 45 0.54 -108
900 0.54 -180 0.25 100 2.10 40 0.58 -112
1000 0.55 178 0.29 96 1.80 36 0.60 -116
1100 0.56 175 0.34 91 1.60 33 0.63 -120
1200 0.57 163 0.40 85 1.40 28 0.65 -126
1300 0.58 150 0.45 80 1.30 26 0.66 -129
1400 0.60 144 0.48 75 1.20 24 0.66 -133
1500 0.60 140 0.52 70 1.10 22 0.66 -135
1600 0.59 130 0.55 66 1.00 21 0.65 -138
1700 0.58 123 0.58 63 0.95 20 0.65 -140
1800 0.56 115 0.60 58 0.90 19 0.64 -142
1900 0.54 110 0.62 54 0.90 20 0.64 -144
2000 0.51 108 0.62 50 0.90 20 0.63 -145
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Page 3
TYPICAL PERFORMANCE BFM21 at 1GHz
Bias Conditions Vd= 12V, Idq= 75mA
1000
90
0
80
0
70
600
50
40
30
0
0
0
0
Pow
e
r
O
u
t
pu
t
(mW)
D2081UK
BIAS
C1
20
0
10
0
0
C3
T1 T2
C2
102030
Power
L1
R1
4
05
06
Input (mW)
C4
T3
10
07080900
+12V
L2
C5
0
C7
C6
BFM21UK 1GHz Test Circuit
C1, C7 33pF ATC100B
C2, C5, C6 1–8pF
C3, C4 1000pF NPO
L1 0.1µH
T1 50Ω microstrip, 11mm long
T2 50Ω microstrip, 15mm long
T3 50Ω microstrip, 5mm long
L2 10mm of 1.6mm tcw (half turn)
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Loading...