Datasheet DK025L, DK020L, DK015L, D8025L, D8020L Datasheet (TECOR)

Thyristor

Product Catalog

Teccor Electronics

1800 Hurd Drive

Irving, Texas 75038

United States of America

Phone: +1 972-580-7777

Fax: +1 972-550-1309

Website: http://www.teccor.com

E-mail: power.techsales@teccor.com

Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devices described in this publication. Furthermore, no license of any patent rights is implied or given to any purchaser.

Teccor Electronics is the proprietor of the QUADRAC® trademark. is a registered trademark of Underwriters Laboratories, Inc. All other brand names may be trademarks of their respective companies. To conserve space in this catalog, the trademark sign (®) is omitted.

Contents

Product Selection Guide

Product Descriptions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - vi Circuit Requirement Diagram - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - vii Product Packages - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - viii Description of Part Numbers- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - x Quality and Reliability Assurance - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -xii Standard Terms and Conditions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - xiv

Data Sheets

V-I Characteristics of Thyristor Devices - - - - - - - - - - - - - - - - - - - - - - - - E0-2 Electrical Parameter Terminology - - - - - - - - - - - - - - - - - - - - - - - - - - - - E0-3 Electrical Specifications

Sensitive Triacs- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E1 Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E2 QUADRACs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E3 Alternistor Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E4 Sensitive SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E5 SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E6 Rectifiers - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E7 Diacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E8 SIDAC - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E9

Mechanical Specifications

Package Dimensions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - M1 Lead Form Dimensions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - M2 Packing Options - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - M3

Application Notes

Fundamental Characteristics of Thyristors - - - - - - - - - - - - - - - - - - - AN1001 Gating, Latching, and Holding of SCRs and Triacs - - - - - - - - - - - - - AN1002 Phase Control Using Thyristors- - - - - - - - - - - - - - - - - - - - - - - - - - - AN1003 Mounting and Handling of Semiconductor Devices - - - - - - - - - - - - - AN1004 Surface Mount Soldering Recommendations - - - - - - - - - - - - - - - - - AN1005 Testing Teccor Semiconductor Devices

Using Curve Tracers - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - AN1006 Thyristors Used As AC Static Switches and Relays - - - - - - - - - - - - AN1007 Explanation of Maximum Ratings and Characteristics for Thyristors - AN1008 Miscellaneous Design Tips and Facts - - - - - - - - - - - - - - - - - - - - - - AN1009 Thyristors for Ignition of Fluorescent Lamps - - - - - - - - - - - - - - - - - - AN1010

Appendix

Cross Reference Guide - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A1 Part Numbers Index- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - A27

Product Selection Guide

Product Descriptions - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 2 Circuit Requirement Diagram - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 3 Product Packages - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 4 Description of Part Numbers- - - - - - - - - - - - - - - - - - - - - - - - - - - - - P 6 Quality and Reliability Assurance - - - - - - - - - - - - - - - - - - - - - - - - - P 8 Standard Terms and Conditions - - - - - - - - - - - - - - - - - - - - - - - - - P 10

Product Descriptions

Thyristors

A thyristor is any semiconductor switch with a bi-stable action depending on p-n-p-n regenerative feedback. Thyristors are normally two- or three-terminal devices for either unidirectional or bidirectional circuit configurations. Thyristors can have many forms, but they have certain commonalities. All thyristors are solid state switches that are normally open circuits (very high impedance), capable of withstanding rated blocking/off-state voltage until triggered to on state. When triggered to on state, thyristors become a low-impedance current path until principle current either stops or drops below a minimum holding level. After a thyristor is triggered to on-state condition, the trigger current can be removed without turning off the device. Thyristors are used to control the flow of electrical currents in applications including:

• Home appliances (lighting, heating, temperature control, alarm activation, fan speed)

• Electrical tools (for controlled actions such as motor speed, stapling event, battery charging)

• Outdoor equipment (water sprinklers, gas engine ignition, electronic displays, area lighting, sports equipment, physical fitness)

Sensitive Triacs

Teccor's sensitive gate triacs are AC bidirectional silicon switches that provide guaranteed gate trigger current levels in Quadrants I, II, III, and IV. Interfacing to microprocessors or other equipment with single polarity gate triggering is made possible with sensitive gate triacs. Gate triggering currents of 3 mA, 5 mA, 10 mA, or 20 mA may be specified.

Sensitive gate triacs are capable of controlling AC load currents from 0.8 A to 8 A rms and can withstand operating voltages from 200 V to 600 V.

Triacs

Teccor's triac products are bidirectional AC switches, capable of controlling loads from 0.8 A to 35 A rms with 10 mA, 25 mA, and 50 mA I

GT

in operating Quadrants I, II and III.

Triacs are useful in full-wave AC applications to control AC power either through full-cycle switching or phase control of current to the load element. These triacs are rated to block voltage in the “OFF” condition from 200 V minimum with selected products capable of 1000 V operation. Typical applications include motor speed controls, heater controls, and incandescent light controls.

Quadrac

Quadrac devices, originally developed by Teccor, are triacs and alternistor triacs with a diac trigger mounted inside the same package. These devices save the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac.

The Quadrac is offered in capacities from 4 A to 15 A rms and voltages from 200 V ac to 600 V ac.

Alternistor Triacs

The Teccor alternistor is specifically designed for applications required to switch highly inductive loads. The design of this special chip effectively offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back).

This new chip construction provides the equivalent of two electrically-separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.

Teccor manufactures 6 A to 40 A alternistors with blocking voltage rating from 200 V to 1000 V. Alternistors are offered in TO-220, TO-218, and TO-218X packages with isolated and non-isolated versions.

Sensitive SCRs

Teccor's sensitive gate SCRs are silicon-controlled rectifiers representing the best in design, performance, and packaging techniques for low- and medium-current applications.

Anode currents of 0.8 A to 10 A rms can be controlled by sensitive gate SCRs with gate drive currents ranging from 12 µA to 500 µA. Sensitive gate SCRs are ideally suited for interfacing to integrated circuits or in applications where high current load requirements and limited gate drive current capabilities exist. Examples include ignition circuits, motor controls, and DC latching for alarms in smoke detectors. Sensitive gate SCRs are available in voltage ratings to 600 V ac.

SCRs

Teccor's SCR products are half-wave, silicon-controlled rectifiers that represent the state of the art in design and performance.

Load current capabilities range from 1 A to 70 A rms, and voltages from 200 V to 1000 V may be specified to meet a variety of application needs.

Because of its unidirectional switching capability, the SCR is used in circuits where high surge currents or latching action is required. It may also be used for half-wave-type circuits where gate-controlled rectification action is required. Applications include crowbars in power supplies, camera flash units, smoke alarms, motor controls, battery chargers, and engine ignition.

Surge current ratings are available from 30 A in the TO-92 packaging to 950 A in the TO-218X package.

Rectifiers

Teccor manufactures 15 A to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby simplifying stock requirements.

Diacs

Diacs are trigger devices used in phase control circuits to provide gate pulses to a triac or SCR. They are voltage-triggered bidirectional silicon devices housed in DO-35 glass axial lead packages and DO-214 surface mount packages.

Diac voltage selections from 27 V to 45 V provide trigger pulses closely matched in symmetry at the positive and negative breakover points to minimize DC component in the load circuit.

Some applications include gate triggers for light controls, dimmers, power pulse circuits, voltage references in AC power circuits, and triac triggers in motor speed controls.

Sidacs

Sidacs represent a unique set of thyristor qualities. The sidac is a bidirectional voltage triggered switch. Some characteristics of this device include a normal 95 V to 330 V switching point, negative resistance range, latching characteristics at turn-on, and a low onstate voltage drop.

One-cycle surge current capability up to 20 A makes the sidac an ideal product for dumping charged capacitors through an inductor in order to generate high-voltage pulses. Applications include light controls, high-pressure sodium lamp starters, power oscillators, and high-voltage power supplies.

Circuit Requirement Diagram

BILATERAL VOLTAGE

SWITCH

RECTIFIER REVERSE BLOCKING

THYRISTOR

BIDIRECTIONAL

THYRISTOR

BILATERAL

VOLTAGE TRIGGER

SIDAC *

RECTIFIER *

DIAC *

GATE CONTROL

DIAC TRIGGER DIRECT

GATE CURRENT

12-500 µA 10-50 mA

SCR *SCR (Sensitive) *

QUADRANT OPERATION

(See Quadrant Chart on Data Sheet)

I I I I I I I I I I I I I V

GATE CURRENT

10-100 mA

GATE CURRENT

3-20 mA

SENSITIVE TRIAC *

TRIAC *

OPTIONS

INTERNAL EXTERNAL

DIACS *

QUADRAC *

ALTERNISTOR TRIAC *

* For detailed information, see specific data sheet in product catalog.

Product Packages

* No center lead on TO-92 Sidacs.

Package Code

Isolated Mounting Tab

GY S C E L K J P

Product

Type

Current

(Amps)

DO-15 DO-35 DO-214 Compak TO-92 * TO-220 TO-218 TO-218X

TO-3

Fastpak

Sensitive

Triac

0.8 ✔ ✔

1 ✔ ✔

4 ✔

6 ✔

8 ✔

Triac

0.8 ✔✔

1 ✔✔

4 ✔

6 ✔

8 ✔

10 ✔

15 ✔

25 ✔

35 ✔

Quadrac

4 ✔

6 ✔

8 ✔

10 ✔

15 ✔

Alternistor

6 ✔

8 ✔

10 ✔

12 ✔

16 ✔

25 ✔✔✔

30 ✔

35

40

✔✔

Sensitive

SCR

0.8 ✔ ✔

1.5 ✔

4

6 ✔

8 ✔

10 ✔

SCR

1 ✔✔

6 ✔

8 ✔

10 ✔

12

15

✔

16

20

✔

25 ✔

35 ✔✔

40

55

65

✔✔

70

Rectifier

15 ✔

20 ✔

25 ✔

Diac

✔✔

Sidac

✔ ✔ ✔ *

Product Packages

Non-isolated Mounting Tab

Package Code

FRMWDVN

TO-202 TO-220 TO-218 TO-218X

TO-252

D-Pak

TO-251

V-Pa k

TO-263

D

2

Pak

Current

(Amps)

Product

Typ e

0.8

Sensitive

Triac

1

✔ ✔ ✔ 4

✔ ✔ 6

✔ ✔ 8

0.8

Triac

1

✔ ✔✔ 4

✔✔ ✔ 6

✔✔ ✔ 8

✔✔ ✔ 10

✔ ✔ 15

✔ ✔ 25

35

4

Quadrac

6

8

10

15

✔ ✔✔✔ 6

Alternistor

✔ ✔✔✔ 8

✔ ✔ 10

✔ ✔ 12

✔ ✔ 16

✔ ✔ 25

30

✔ 35

40

✔ 0.8

Sensitive SCR

✔ 1.5

✔ ✔ ✔ ✔ 4

✔ ✔ ✔ ✔ 6

✔ ✔ ✔ ✔ 8

✔ ✔ ✔ ✔ 10

1

SCR

✔ ✔✔ 6

✔✔ ✔✔ 8

✔✔ ✔✔ 10

✔✔✔12

15

✔ ✔ 16

20

✔ ✔ 25

35

✔ ✔ 40

✔✔✔ ✔55

65

✔ 70

15

Rectifier

20

25

Diac

✔

Sidac

Description of Part Numbers

Sensitive Triac

Quadrac

Sensitive SCR

Triac and Alternistor

L

20

04

F5

12

Device Type L = Sensitive Triac

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V

Current Rating

Package Type Blank =

Compak

(Surface Mount) D = TO-252 (Surface Mount) E = TO-92 (Isolated) F = TO-202 (Non-islolated) L = TO-220 (Isolated) V = TO-251 (Non-islolated)

Gate Variations 3 = 3 mA (Q I, II, III, IV) 5 = 5 mA (Q I, II, III, IV)

6 = 5 mA (Q I, II, III) 6 = 10 mA (Q IV)

8 = 10 mA (Q I, II, III)

8 = 20 mA (Q IV)

Lead Form Dimensions

TO-202 TO-220

TO-92

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

X8 = 0.8 A N = 1 A 01 = 1 A 04 = 4 A 06 = 6 A 08 = 8 A

Q2004 L T 52

Device Type Q =

Quadrac

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V

Current Rating 04 = 4 A 06 = 6 A 08 = 8 A 10 = 10 A 15 = 15 A

Package Type

L = TO-220 (Isolated)

Gate Variation

T = Internal Diac Trigger

Lead Form Dimensions

TO-220

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

H

Alternistor

Q

20

04

F3

1

Device Type Q = Triac or Alternistor

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V 80 = 800 V K0 = 1000 V

Current Rating X8 = 0.8 A 01 = 1 A 04 = 4 A 06 = 6 A 08 = 8 A 10 = 10 A 12 = 12 A 15 = 15 A 25 = 25 A 30 = 30 A 35 = 35 A 40 = 40 A

Gate Variation

DH3 and VH3 = 10mA (Q I, II, III)

3 = 10 mA (Q I, II, III)

H3 = 20mA (Q I, II, III)

4 = 25 mA (Q I, II, III)

H4 = 35 mA (Q I, II, III) *

5 = 50 mA (Q I, II, III)

H5 = 50 mA (Q I, II, III) *

6 = 80 mA (Q I, II, III) *

7 = 100 mA (Q I, II, III) *

Lead Form Dimensions

TO-202 TO-220

TO-92

TO-218X

TO-218

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

Package Type D = TO-252 (Surface Mount) E = TO-92 (Isolated) F = TO-202 (Non-isolated) J = TO-218X (Isolated) K = TO-218 (Isolated) L = TO-220 (Isolated) N = TO-263 (Surface Mount) P =

Fastpak

(Isolated) R = TO-220 (Non-isolated) V = TO-251 (Non-isolated) W = TO-218X (Non-isolated)

* NOTE: Alternistor device; no Quadrant IV operation

S

20

06

FS2

21

Device Type S = Sensitive SCR

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V

Current Rating X8 = 0.8 A N = 1 A 06 = 6 A 08 = 8 A 10 = 10 A

Package Type

Blank = Compak (Surface Mount)

D = TO-252 (Surface Mount)

F = TO-202 (Non-islolated)

L = TO-220 (Isolated)

V = TO-251 (Non-islolated)

Gate Variations

S1 = 50 µA S2 = 200 µA S3 = 500 µA

Lead Form Dimensions

TO-202 TO-220

X

Special Options

V = 4000 V Isolated

(TO-220 Package Only)

EC

103

D

1

75

Device Type TCR = TO-92 (Isolated) EC = TO-92 (Isolated) T = TO-202 (Non-isolated) 2N = JEDEC (Isolated)

Voltage Rating for TCR

-4 = 200 V

-6 = 400 V

-8 = 600 V

Current Rating for TCR 22 = 1.5 A

Lead Form Dimensions

TO-92

TO-202

Current Rating for EC 103 = 0.8 A

Current Rating for T 106 = 4 A (I

GT

= 200 µA)

107 = 4 A (I

GT

= 500 µA)

Current Rating for 2N 5xxx = 0.8 A

Gate Current (for EC series only)

None = 200 µA

1 = 12 µA 2 = 50 µA

3 = 500 µA

Voltage Rating for EC and T

B = 200 V D = 400 V M = 600 V

Voltage Rating for 2N

5064 = 200 V 6565 = 400 V

Description of Part Numbers

SCR

Rectifier

Diac

Sidac

S

20

08

F12

Device Type S = Non-sensitive SCR

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V 80 = 800 V K0 = 1000 V

Current Rating 01 = 1 A 06 = 6 A 08 = 8 A 10 = 10 A 12 = 12 A 15 = 15 A 16 = 16 A 20 = 20 A 25 = 25 A 35 = 35 A 55 = 55 A 65 = 65 A 70 = 70 A

Package Type

D = TO

-

252 (Surface Mount)

E = TO

-

92 (Isolated)

F = TO-202 (Non-isolated)

J = TO-218X (Isolated)

K = TO-218 (Isolated) L = TO-220 (Isolated)

M = TO-218 (Non-isolated)

N = TO-263 (Surface Mount)

R = TO-220 (Non-isolated)

V = TO-251 (Non-isolated)

W = TO-218X (Non-isolated)

Lead Form Dimensions

TO

-

202

TO

-

220

TO

-

92

TO

-

218X

TO

-

218

X

Special Options

V = 4000 V Isolation

(TO-220 Package Only)

D

20

15

L55

Device Type D = Rectifier

Voltage Rating 20 = 200 V 40 = 400 V 60 = 600 V 80 = 800 V K0 = 1000 V

Current Rating 15 = 15 A 20 = 20 A 25 = 25 A

Package Type

L = TO-220 (Isolated)

Lead Form Dimensions

TO-220

V

Special Options

V = 4000 V Isolation

HT

32

91

Device Type HT = Diac Trigger in DO-35 ST = Diac Trigger in DO-214

Lead Form Dimensions

DO-35

Voltage Rating 32 = 27 V to 37 V 35 = 30 V to 40 V 40 = 35 V to 45 V

32A / 5761 = 28 V to 36 V

32B / 5761A = 30 V to 34 V

34B = 32 V to 36 V

36A / 5762 = 32 V to 40 V

36B = 34 V to 38 V

K

105

0

E70

Device Type K = Sidac

Voltage Rating 105 = 95 V to 113 V 110 = 104 V to 118 V 120 = 110 V to 125 V 130 = 120 V to 138 V 140 = 130 V to 146 V 150 = 140 V to 170 V 200 = 190 V to 215 V 220 = 205 V to 230 V 240 = 220 V to 250 V 250 = 240 V to 280 V 300 = 270 V to 330 V

Current Rating

0 = 1 A

Package Type

E = TO-92 (Isolated)

F = TO-202 (Non-islolated)

G = DO-15X (Isolated)

S = DO-214 (Surface Mount)

Lead Form Dimensions

TO-202

TO-92

Quality and Reliability

It is Teccor’s policy to ship quality products on time. We accomplish this through Total Quality Management based on the fundamentals of customer focus, continuous improvement, and people involvement.

In support of this commitment, Teccor applies the following principles:

• Employees shall be respected, involved, informed, and qualified for their job with appropriate education, training, and experience.

• Customer expectations shall be met or exceeded by consistently shipping products that meet the agreed specifications, quality levels, quantities, schedules, and test and reliability parameters.

• Suppliers shall be selected by considering quality, service, delivery, and cost of ownership.

• Design of products and processes will be driven by customer needs, reliability, and manufacturability.

It is the responsibility of management to incorporate these principles into policies and systems.

It is the responsibility of those in leadership roles to coach their people and to reinforce these principles.

It is the responsibility of each individual employee to follow the spirit of this statement to ensure that we meet the primary policy — to ship quality products on time.

Quality Assurance

Incoming Material Quality

Teccor “Vendor Analysis” programs provide stringent requirements before components are delivered to Teccor. In addition, purchased materials are tested rigidly at incoming inspection for specification compliance prior to acceptance for use.

Process Controls

From silicon slice input through final testing, we use statistical methods to control all critical processes. Process audits and lot inspections are performed routinely at all stages of the manufacturing cycle.

Parametric Testing

All devices are 100% computer tested for specific electrical characteristics at critical processing points.

Final Inspection

Each completed manufacturing lot is sampled and tested for compliance with electrical and mechanical requirements.

Reliability Testing

Random samples are taken from various product families for ongoing reliability testing.

Finished Goods Inspection

Product assurance inspection is performed immediately prior to shipping.

Design Assurance

The design and production of Teccor devices is a demanding and challenging task. Disciplined skills coupled with advanced computer-aided design, production techniques, and test equipment are essential elements in Teccor's ability to meet your demands for the very highest levels of quality.

All products must first undergo rigid quality design reviews and pass extensive environmental life testing. Teccor uses Statistical Process Control (SPC) with associated control charts throughout to monitor the manufacturing processes.

Only those products which pass tests designed to assure Teccor's high quality and reliability standards, while economically satisfying customer requirements, are approved for shipment. All new products and materials must receive approval of QRA prior to being released to production.

The combination of reliability testing, process controls, and lot tracking assures the quality and reliability of Teccor's devices. Since even the best control systems cannot overcome measurement limitations, Teccor designs and manufactures its own computerized test equipment.

Teccor's Reliability Engineering Group conducts ongoing product reliability testing to further confirm the design and manufacturing parameters.

Quality and Reliability

Reliability Stress Tests

The following table contains brief descriptions of the reliability tests commonly used in evaluating Teccor product reliability on a periodic basis. These tests are applied across product lines depending on product availability and test equipment capacities. Other tests may be performed when appropriate.

Flammability Test

For the UL 94V0 flammability test, all expoxies used in Teccor encapsulated devices are recognized by Underwriters Laboratories

Test Ty p e Typical Conditions Test Description Standards

High Temperature

AC Blocking

TA = 100 °C to 150 °C, Bias @

100%

Rated V

DRM

, t = 24 hrs to 1000 hrs

Evaluation of the reliability of product under bias conditions and elevated temperature

MIL-STD-750, M-1040

High Temperature

Storage Life

T

A

= 150 °C, t = 250 to 1000 hrs Evaluation of the effects on

devices after long periods of storage at high temperature

MIL-STD-750, M-1031

Temperature and Humidity

Bias Life

T

A

= 85 °C to 95 °C, rh = 85% to

95%

Bias @ 80% Rated V

DRM

(320 VDC max)

t = 168 to 1008 hrs

Evaluation of the reliability of nonhermetic packaged devices in humid environments

EIA / JEDEC, JESD22-A101

Temperature Cycle

[Air to Air]

T

A

= -65°C to 150°C,

cycles = 10 to 500

Evaluation of the device’s ability to withstand the exposure to extreme temperatures and the forces of TCE during transitions between temperatures

MIL-STD-750, M-1051, EIA / JEDEC, JESD22-A104

Thermal Shock

[Liquid to Liquid]

T

A

= 0 °C to 100 °C, t

txfr

= ≤10 s,

cycled = 10 to 20

Evaluation of the device’s ability to withstand the sudden changes in temperature and exposure to extreme temperatures

MIL-STD-750, M-1056

Autoclave

T

A

= 121 °C, rh = 100%, P = 15 psig,

t = 24 hrs to 168 hrs

Accelerated environmental test to evaluate the moisture resistance of plastic packages

EIA / JEDEC, JESD22-A102

Resistance to

Solder Heat

T

A

= 260 °C, t = 10 s Evaluation of the device’s ability

to withstand the temperatures as seen in wave soldering operations

MIL-STD-750, M-2031

Solderability

Steam aging = 1 hr to 8 hrs,

T

solder

= 245 °C, Flux = R

Evaluation of the solderability of device terminals after an extended period

MIL-STD-750, M-2026, ANSI-J-STD-002

Standard Terms and Conditions

Supplier shall not be bound by any term proposed by Buyer in the absence of written agreement to such term signed by an authorized officer of Supplier.

(1) PRICE:

(A) Supplier reserves the right to change product prices at

any time but, whenever practicable, Supplier will give Buyer at least thirty (30) days written notice before the effective date of any price change. Unless Supplier has specifically agreed in writing, signed by an authorized officer of Supplier, that a quoted price shall not be subject to change for a certain time, all products shipped on or after the effective date of a price change may be billed at the new price level.

(B) Whenever Supplier agrees to a modification of Buyer's

order (which modification must be in writing and signed by an authorized officer of Supplier), Supplier reserves the right to alter its price, whether or not such price was quoted as “firm.”

(C) Prices do not include federal, state or local taxes, now or

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Standard Terms and Conditions

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TIONS: No attempted or suggested modification of or addition to any of the provisions upon the face or reverse of this form, whether contained or arising in correspondence and/or documents passing between Supplier and Buyer, in any course of dealing between Supplier or Buyer, or in any customary usage prevalent among businesses comparable to those of Supplier and/or Buyer, shall be binding upon Supplier unless made and agreed to in writing and signed by an officer of Supplier.

(13) QUANTITIES: Any variation in quantities of electronic com-

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Notes

Data Sheets

E0

V-I Characteristics of Thyristor Devices - - - - - - - - - - - - - - - - - - - - - E0-2 Electrical Parameter Terminology - - - - - - - - - - - - - - - - - - - - - - - - - E0-3

Sensitive Triacs- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E1 Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E2 QUADRACs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E3 Alternistor Triacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E4 Sensitive SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E5 SCRs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E6 Rectifiers - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E7 Diacs - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E8 SIDAC - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - E9

V-I Characteristics of Thyristor Devices

V-I Characteristics of Triac Device

V-I Characteristics of SCR Device

V-I Characteristics of Sidac Device with Negative Resistance

V-I Characteristics of Bilateral Trigger Diac

Breakover

Voltage

Specified Minimum

Off-state Blocking

Voltage (V

DRM

)

+I

-I

+V

-V

Minimum Holding Current (I

H

)

Voltage Drop (V

T

) at

Specified Current (i

T

)

Latching Current (I

L

)

Off-state Leakage Current – (I

DRM

)

at

Specified V

DRM

Reverse

Breakdown

Voltage

Forward

Breakover

Voltage

Specified Minimum

Off - State

Blocking

Voltage (V

DRM

)

+I

-I

+V

-V

Minimum Holding Current (I

H

)

Voltage Drop (VT) at Specified Current (i

T

)

Latching Current (IL)

Off - State Leakage Current - (I

DRM

) at

Specified V

DRM

Specified Minimum

Reverse Blocking

Voltage (V

RRM

)

Reverse Leakage Current - (I

RRM

) at

Specified V

RRM

-V

+I

V

DRM

+V

V

S

I

S

I

H

R

S

I

DRM

I

BO

V

BO

V

T

I

T

(IS - IBO)

(V

BO

- VS)

R

S

=

-I

+I

-I

10 mA

+V-V

Breakover Current I

BO

Breakover

Voltage

V

BO

∆V

Electrical Parameter Terminology

Thyristor

di/dt (Critical Rate-of-rise of On-state Current) – Maximum

value of the rate-of-rise of on-state current which a thyristor can withstand without deleterious effect

dv/dt (Critical Rate-of-rise of Off-state Voltage or Static dv/dt) –

Minimum value of the rate-of-rise of principal voltage

which will cause switching from the off state to the on state

dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a Triac (Commutating dv/dt) –

Minimum value of the rate-of-rise of principal voltage which will cause switching from the off state to the on state immediately following on-state current conduction in the opposite quadrant

I2t (RMS Surge (Non-repetitive) On-state Fusing Current) –

Measure of let-through energy in terms of current and time for fusing purposes

I

BO

(Breakover Current) – Principal current at the breakover

point

I

DRM

(Repetitive Peak Off-state Current) – Maximum leakage

current that may occur under the conditions of V

DRM

IGT (Gate Trigger Current) – Minimum gate current required to

switch a thyristor from the off state to the on state

IH (Holding Current) – Minimum principal current required to

maintain the thyristor in the on state

IPP (Peak Pulse Current) – Peak pulse current at a short time

duration and specified waveshape

I

RRM

(Repetitive Peak Reverse Current) – Maximum leakage

current that may occur under the conditions of V

RRM

IS (Switching Current) – Current at V

S

when a sidac switches

from the clamping state to on state

I

T(RMS)

(On-state Current) – Anode cathode principal current

that may be allowed under stated conditions, usually the fullcycle RMS current

I

TSM

(Surge (Non-repetitive) On-state Current) – Peak single

cycle AC current pulse allowed

P

G(AV)

(Average Gate Power Dissipation) – Value of gate

power which may be dissipated between the gate and main terminal 1 (or cathode) average over a full cycle

PGM (Peak Gate Power Dissipation) – Maximum power which

may be dissipated between the gate and main terminal 1 (or cathode) for a specified time duration

R

θJA

(Thermal Resistance, Junction-to-ambient) – Tempera-

ture difference between the thyristor junction and ambient divided by the power dissipation causing the temperature difference under conditions of thermal equilibrium

Note: Ambient is defined as the point where temperature does not change as a result of the dissipation.

R

θJC

(Thermal Resistance, Junction-to-case) – Temperature

difference between the thyristor junction and the thyristor case divided by the power dissipation causing the temperature difference under conditions of thermal equilibrium

tgt (Gate-controlled Turn-on Time) – Time interval between

the 10% rise of the gate pulse and the 90% rise of the principal current pulse during switching of a thyristor from the off state to the on state

tq (Circuit-commutated Turn-off Time) – Time interval

between the instant when the principal current has decreased to zero after external switching of the principal voltage circuit and the instant when the SCR is capable of supporting a specified principal voltage without turning on

VBO (Breakover Voltage) – Principal voltage at the breakover

point

V

DRM

(Repetitive Peak Off-state Voltage) – Maximum allow-

able instantaneous value of repetitive off-state voltage that may be applied across a bidirectional thyristor (forward or reverse direction) or SCR (forward direction only)

V

GT

(Gate Trigger Voltage) – Minimum gate voltage required to

produce the gate trigger current

V

RRM

(Repetitive Peak Reverse Voltage) – Maximum allow-

able instantaneous value of a repetitive reverse voltage that may be applied across an SCR without causing reverse current avalanche

VS (Switching Voltage) – Voltage point after V

BO

when a sidac

switches from a clamping state to on state

VT (On-state Voltage) – Principal voltage when the thyristor is in

the on state

Diode Rectifiers

I

F(AV)

(Average Forward Current) – Average forward conduc-

tion current

IFM (Maximum (Peak) Reverse Current) – Maximum reverse

leakage current that may occur at rated V

RRM

I

F(RMS)

(RMS Forward Current) – RMS forward conduction cur-

rent

I

FSM

(Maximum (Peak) Forward (Non-repetitive) Surge

Current) –

Maximum (peak) forward single cycle AC surge cur-

rent allowed for specified duration

VFM (Maximum (Peak) Forward Voltage Drop) – Maximum

(peak) forward voltage drop from the anode to cathode at stated conditions

VR (Reverse Blocking Voltage) – Maximum allowable DC

reverse blocking voltage that may be applied to the rectifier

V

RRM

(Maximum (Peak) Repetitive Reverse Voltage) – Maxi-

mum peak allowable value of a repetitive reverse voltage that may be applied to the rectifier

Notes

Selected Packages*

U.L. RECOGNIZED

File #E71639

MT2 MT1

G

Sensitive Triacs

(0.8 A to 8 A)

E1

General Description

Teccor's line of sensitive gate triacs includes devices with current capabilities through 8 A. Voltage ranges are available from 200 V to 600 V. This line features devices with guaranteed gate control in Quadrants II and IV as well as control in the commonly used Quadrants I and III. Four-quadrant control devices require sensitive gate triacs. They can be controlled by digital circuitry where positive-only or negative-only pulses must control AC current in both directions through the device. Note that triacs with low I

GT

values in Quadrants II and IV will have lower dv/dt

characteristics.

The sensitive gate triac is a bidirectional AC switch and is gate controlled for either polarity of main terminal voltage. It is used primarily for AC switching and phase control applications such as motor speed controls, temperature modulation controls, and lighting controls.

The epoxy TO-92 and TO-220 configurations feature Teccor's electrically-isolated construction where the case or mounting tab is internally isolated from the semiconductor chip and lead attachments. Non-isolated epoxy TO-202 packages are available as well as TO-251 and surface mount TO-252 (D-Pak). Tapeand-reel capability and tube packing also are available. See “Packing Options” section of this catalog.

All Teccor triacs have glass-passivated junctions. This glassing process prevents migration of contaminants and ensures longterm device reliability with parameter stability.

Variations of devices covered in this data sheet are available for custom design applications. Consult factory for more information.

Features

• Electrically-isolated packages

• Glass-passivated junctions ensure long device reliability and parameter stability

• Voltage capability — up to 600 V

• Surge capability — up to 80 A

• Four-quadrant gating guaranteed

Compak Sensitive Gate Triac

• Surface mount package — 0.8 A and 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

TO-202

TO-92

3-lead

Compak

*TO-220

Isolated

E1

TO-252

D-Pak

TO-251

V-P ak

Sensitive Triacs Data Sheets

See “General Notes” on page E1 - 4 and “Electrical Specification Notes” on page E1 - 5.

I

T(RMS)

Part No.

V

DRM

I

GT

I

DRM

Isolated Non-isolated

(11)

TO-92 Compak TO-220

TO-252

D-Pak TO-202

TO-251

V-Pa k

(1)

Volts

(3) (6) (9)

mAmps

(1) (14)

mAmps

QI QII QIII QIV

T

C

=

25 °C

TC =

110 °C

MAX See “Package Dimensions” section for variations. (12) MIN MAX MAX

0.8 A

L2X8E3 L2X3 200 3 3 3 3 0.01 0.1 L4X8E3 L4X3 400 3 3 3 3 0.01 0.1 L6X8E3 L6X3 600 3 3 3 3 0.01 0.1 L2X8E5 L2X5 200 5 5 5 5 0.01 0.1 L4X8E5 L4X5 400 5 5 5 5 0.01 0.1 L6X8E5 L6X5 600 5 5 5 5 0.01 0.1 L2X8E6 200 5 5 5 10 0.01 0.1 L4X8E6 400 5 5 5 10 0.01 0.1 L6X8E6 600 5 5 5 10 0.01 0.1 L2X8E8 200 10 10 10 20 0.01 0.1 L4X8E8 400 10 10 10 20 0.01 0.1 L6X8E8 600 10 10 10 20 0.01 0.1

1A

L201E3 L2N3 200 33330.01 0.1 L401E3 L4N3 400 33330.01 0.1 L601E3 L6N3 600 33330.01 0.1 L201E5 L2N5 200 55550.01 0.1 L401E5 L4N5 400 55550.01 0.1 L601E5 L6N5 600 55550.01 0.1 L201E6 200 5 5 5 10 0.01 0.1 L401E6 400 5 5 5 10 0.01 0.1 L601E6 600 5 5 5 10 0.01 0.1 L201E8 200 10101020 0.01 0.1 L401E8 400 10101020 0.01 0.1 L601E8 600 10101020 0.01 0.1

4A

L2004L3 L2004D3 L2004F31 L2004V3 200 3 3 3 3 0.01 0.2 L4004L3 L4004D3 L4004F31 L4004V3 400 3 3 3 3 0.01 0.2 L6004L3 L6004D3 L6004F31 L6004V3 600 3 3 3 3 0.01 0.2 L2004L5 L2004D5 L2004F51 L2004V5 200 5 5 5 5 0.01 0.2 L4004L5 L4004D5 L4004F51 L4004V5 400 5 5 5 5 0.01 0.2 L6004L5 L6004D5 L6004F51 L6004V5 600 5 5 5 5 0.01 0.2 L2004L6 L2004D6 L2004F61 L2004V6 200 5 5 5 10 0.01 0.2 L4004L6 L4004D6 L4004F61 L4004V6 400 5 5 5 10 0.01 0.2 L6004L6 L6004D6 L6004F61 L6004V6 600 5 5 5 10 0.01 0.2 L2004L8 L2004D8 L2004F81 L2004V8 200 10 10 10 20 0.01 0.2 L4004L8 L4004D8 L4004F81 L4004V8 400 10 10 10 20 0.01 0.2 L6004L8 L6004D8 L6004F81 L6004V8 600 10 10 10 20 0.01 0.2

MT1

G

MT2

MT1

G

MT1

MT2

G

MT2

MT1

G

MT1

G

MT2

G

MT1

Data Sheets Sensitive Triacs

See “General Notes” on page E1 - 4 and “Electrical Specification Notes” on page E1 - 5.

V

TM

V

GT

I

H

I

GTM

P

GM

P

G(AV)

I

TSM

dv/dt(c) dv/dt

t

gt

I2t di/dt

(1) (4)

Volt s

(2) (5) (15)

Volt s

(1) (7)

mAmps

(13)

Amps

(13)

Watts Watts

(8) (10)

Amps

(1) (10)

Volt s/µSe c

(1)

Vol ts/µSec

(9)

µSec Amps

2

Sec Amps/µSec

T

C

=

25 °C

TC =

25 °C60/50Hz

TC =

100 °C

MAX MAX MAX TYP TYP TYP

1.6 2 5 1 10 0.2 10/8.3 0.5 20 2.8 0.41 20

1.6 2 5 1 10 0.2 10/8.3 0.5 15 2.8 0.41 20

1.6 2 5 1 10 0.2 10/8.3 0.5 10 2.8 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 20 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 15 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 10 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 30 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 25 3 0.41 20

1.6 2 10 1 10 0.2 10/8.3 1 20 3 0.41 20

1.6 2 15 1 10 0.2 10/8.3 2 35 3.2 0.41 20

1.6 2 15 1 10 0.2 10/8.3 2 30 3.2 0.41 20

1.6 2 15 1 10 0.2 10/8.3 2 25 3.2 0.41 20

1.625110 0.220/16.70.5 202.81.6 20

1.625110 0.220/16.70.5 102.81.6 20

1.6 2 10 1 10 0.2 20/16.7 1 20 3 1.6 20

1.6 2 10 1 10 0.2 20/16.7 1 10 3 1.6 20

1.6 2 10 1 10 0.2 20/16.7 1 30 3 1.6 20

1.6 2 10 1 10 0.2 20/16.7 1 20 3 1.6 20

1.6 2 15 1 10 0.2 20/16.7 1 35 3.2 1.6 20

1.6 2 15 1 10 0.2 20/16.7 1 25 3.2 1.6 20

1.6 2 5 1.2 15 0.3 40/33 0.5 25 2.8 6.6 50

1.6 2 5 1.2 15 0.3 40/33 0.5 15 2.8 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 25 3 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 15 3 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 30 3 6.6 50

1.6 2 10 1.2 15 0.3 40/33 1 20 3 6.6 50

1.6 2 15 1.2 15 0.3 40/33 2 35 3.2 6.6 50

1.6 2 15 1.2 15 0.3 40/33 2 25 3.2 6.6 50

Sensitive Triacs Data Sheets

Specified Test Conditions

di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA with

0.1

µs rise time

dv/dt — Critical rate-of-rise of off-state voltage at rated V

DRM

gate open

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

DRM

and I

T(RMS)

commutating di/dt = 0.54 rated I

T(RMS)

/ms; gate

unenergized

I

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

DRM

— Peak off-state current, gate open; V

DRM

= max rated value

I

GT

— DC gate trigger current in specific operating quadrants;

V

D

= 12 V dc; RL = 60 Ω

I

GTM

— Peak gate trigger current

I

H

— Holding current gate open; initial on-state current = 100 mA dc

I

T(RMS)

— RMS on-state current conduction angle of 360°

I

TSM

— Peak one-cycle surge

P

G(AV)

— Average gate power dissipation

P

GM

— Peak gate power dissipation; I

GT

≤ I

GTM

tgt — Gate controlled turn-on time; IGT = 50 mA with 0.1 µs rise time

V

DRM

— Repetitive peak off-state/blocking voltage

V

GT

— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω

V

TM

— Peak on-state voltage at max rated RMS current

General Notes

• All measurements are made with 60 Hz resistive load and at an

ambient temperature of +25 °C unless otherwise specified.

• Operating temperature range (T

J

) is -65 °C to +110 °C for TO-92

devices and -40 °C to 110 °C for all other devices.

• Storage temperature range (T

S

) is -65 °C to +150 °C for TO-92 devices, -40 °C to +150 °C for TO-202 devices, and -40 °C to +125 °C for TO-220 devices.

• Lead solder temperature is a maximum of 230 °C for 10 seconds

maximum at a minimum of 1/16” (1.59 mm) from case.

• The case or lead temperature (T

C

or TL) is measured as shown on dimensional outline drawings. See “Package Dimensions” section of this catalog.

I

T(RMS)

Part No.

V

DRM

I

GT

I

DRM

Isolated Non-isolated

(11)

TO-220

TO-252

D-Pak

TO-251

V-Pa k

(1)

Volt s

(3) (6)

mAmps

(1) (14)

mAmps

QI QII QIII QIV T

C

= 25 °C TC = 110 °C

MAX See “Package Dimensions” section for variations. (12) MIN MAX MAX

6A

L2006L5 L2006D5 L2006V5 2005555 0.02 0.5 L4006L5 L4006D5 L4006V5 4005555 0.02 0.5 L6006L5 L6006D5 L6006V5 6005555 0.02 0.5 L2006L6 L2006D6 L2006V6 200 5 5 5 10 0.02 0.5 L4006L6 L4006D6 L4006V6 400 5 5 5 10 0.02 0.5 L6006L6 L6006D6 L6006V6 600 5 5 5 10 0.02 0.5 L2006L8 L2006D8 L2006V8 200 10 10 10 20 0.02 0.5 L4006L8 L4006D8 L4006V8 400 10 10 10 20 0.02 0.5 L6006L8 L6006D8 L6006V8 600 10 10 10 20 0.02 0.5

8A

L2008L6 L2008D6 L2008V6 200 5 5 5 10 0.02 0.5 L4008L6 L4008D6 L4008V6 400 5 5 5 10 0.02 0.5 L6008L6 L6008D6 L6008V6 600 5 5 5 10 0.02 0.5 L2008L8 L2008D8 L2008V8 200 10 10 10 20 0.02 0.5 L4008L8 L4008D8 L4008V8 400 10 10 10 20 0.02 0.5 L6008L8 L6008D8 L6008V8 600 10 10 10 20 0.02 0.5

MT1

MT2

G

MT2

MT1

G

MT2

G

MT1

Data Sheets Sensitive Triacs

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage V

GT

with reference to MT1

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E1.4 for i

T

versus vT.

(5) See Figure E1.6 for V

GT

versus TC.

(6) See Figure E1.7 for I

GT

versus TC.

(7) See Figure E1.5 for I

H

versus TC.

(8) See Figure E1.9 for surge rating and specific duration.

(9) See Figure E1.8 for t

gt

versus IGT.

(10) See Figure E1.2 and Figure E1.3 for maximum allowable case

temperature at maximum rated current.

(11) See Figure E1.1, Figure E1.2, and Figure E1.3 for T

A

or TC versus

I

T(RMS)

.

(12) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(13) Pulse width ≤10 µs

(14) T

C

or T

L

= TJ for test conditions in off state

(15) Minimum non-trigger V

GT

at 110 °C is 0.2 V.

Gate Characteristics

Teccor triacs may be turned on between gate and MT1 terminals in the following ways:

• In-phase signals (with standard AC line) using Quadrants I and III

• Application of unipolar pulses (gate always positive or negative), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses

When maximum surge capability is required, pulses should be a minimum of one magnitude above I

GT

rating with a steep rising

waveform (

≤1 µs rise time).

Definition of Quadrants

V

TM

V

GT

I

H

I

GTM

P

GM

P

G(AV)

I

TSM

dv/dt(c) dv/dt

t

gt

I2t di/dt

(1) (4)

Volts

(2) (5) (15)

Volts

(1) (7)

mAmps

(13)

Amps

(13)

Watts Watts

(8) (10)

Amps

(1) (10)

Volts/ µSec

(1)

Volts/ µSec

(9)

µSec Amps

2

Sec Amps/µSec

T

C

= 25 °C TC = 25 °C 60/50 Hz TC = 100 °C

MAX MAX MAX TYP TYP TYP

1.6 2 10 1.6 18 0.4 60/50 1 40 3 15 70

1.6 2 10 1.6 18 0.4 60/50 1 30 3 15 70

1.6 2 10 1.6 18 0.4 60/50 1 20 3 15 70

1.6 2 10 1.6 18 0.4 60/50 2 40 3 15 70

1.6 2 10 1.6 18 0.4 60/50 2 30 3 15 70

1.6 2 10 1.6 18 0.4 60/50 2 20 3 15 70

1.6 2 20 1.6 18 0.4 60/50 2 45 3.2 15 70

1.6 2 20 1.6 18 0.4 60/50 2 40 3.2 15 70

1.6 2 20 1.6 18 0.4 60/50 2 30 3.2 15 70

1.6 2 10 1.6 18 0.4 80/65 2 40 3 26.5 70

1.6 2 10 1.6 18 0.4 80/65 2 30 3 26.5 70

1.6 2 10 1.6 18 0.4 80/65 2 20 3 26.5 70

1.6 2 20 1.6 18 0.4 80/65 2 45 3.2 26.5 70

1.6 2 20 1.6 18 0.4 80/65 2 40 3.2 26.5 70

1.6 2 20 1.6 18 0.4 80/65 2 30 3.2 26.5 70

MT2 POSITIVE

(Positive Half Cycle)

MT2 NEGATIVE

(Negative Half Cycle)

MT1

MT2

+

I

GT

REF

QII

MT1

I

GT

GATE

MT2

REF

MT1

MT2

REF

MT1

MT2

REF

QI QIV

QIII

ALL POLARITIES ARE REFERENCED TO MT1

(-)

I

GT

GATE

(+)

I

GT

-

I

GT

GATE

(-)

I

GT

GATE

(+)

+

-

Sensitive Triacs Data Sheets

Electrical Isolation

Teccor’s isolated triac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following isolation table shows standard isolation ratings.

*UL Recognized File #E71639

* Mounted on 1 cm

2

copper foil surface; two-ounce copper foil

Figure E1.1 Maximum Allowable Ambient Temperature versus

On-state Current

Figure E1.2 Maximum Allowable Case Temperature versus

On-state Current (0.8 A and 1 A)

Electrical Isolation

from Leads to Mounting Tab

VACRMS TO-220 *

2500 Standard

Thermal Resistance (Steady State) Junction to Mounting Tab

and Junction to Ambient

R

θJC

[R

θJA

] °C/W (TYP)

Package Code ECFLF2DV

Typ e

TO-92

Plastic Compak

TO-202

Type 1

TO-220 Isolated

TO-202

Type 2

TO-252

D-Pak

TO-251

V-Pa k

0.8 A 60 [135] 60 *

1 A 50 [95] 40 *

4A 3.5 [45] 3.6 [50] 6.0 [70] 3.5 6.0 [70]

6A 3.3 3.2 3.2

8A 2.8 2.7 2.7

20

40

60

80

100

120

RMS On-State Current [I

T(RMS)

] - Amps

Maximum Allowable Ambient Temperature (

T

A

) - ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

FREE AIR RATING – NO HEATSINK

TO-220 and TYPE 1 and 3 TO-202

TYPE 2 and 4 TO-202 and TO-251

0.8 A TO-92

1 A TO-92

25

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

50

60

70

80

90

100

110

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawings

RMS On-State Current [I

T(RMS)

] – Amps

1 A

0.8 A

Data Sheets Sensitive Triacs

Figure E1.3 Maximum Allowable Case Temperature versus

On-state Current (4 A, 6 A, and 8 A)

Figure E1.4 On-state Current versus On-state Voltage (Typical)

Figure E1.5 Normalized DC Holding Current versus Case Temperature

Figure E1.6 Normalized DC Gate Trigger Voltage for All Quadrants

versus Case Temperature

Figure E1.7 Normalized DC Gate Trigger Current for All Quadrants

versus Case Temperature

Figure E1.8 Turn-on Time versus Gate Trigger Current (Typical)

01 23 4 5 6 7 8

60

65

70

75

80

85

90

95

100

105

110

RMS On-State Current [I

T(RMS)

] - Amps

Maximum Allowable Case Temperature

(

T

C

)

- ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawings

4 A TYPE 1 and 3 TO-202 4 A TO-220 (Isolated) 4 A TO-252

8 A TO-220 (Isolated)

6 A TO-220 (Isolated)

4 A TYPE 2 and 4 TO-202 4 A TO-251

8 A TO-251 and TO-252

6 A TO-251 6 A TO-252

0 0.5 0.8 1.0 1.2 1.4 1.6 1.8

0

2

4

6

8

10

12

14

16

18

20

Positive or Negative Instantaneous

On-state Voltage (v

T

) - Volts

Positive or Negative Instantaneous

On-state Current (i

T

) - Amps

1 A

4 A

6 A and 8 A

TC = 25 ˚C

0.8 A

-40 -15 +25 +65

+110

+125

0

1.0

2.0

3.0

4.0

-65

Case Temperature (

T

C

) - ˚C

INITIAL ON-STATE CURRENT

= 100 mA (DC) 0.8 - 4 A Devices

= 200 mA (DC) 6 - 8 A Devices

Ratio of

I

H

I

H

(T

C

= 25

˚

C)

-65 -40 -15 +65 +110 +125+25

0

.5

1.0

1.5

2.0

Ratio of

V

GT

V

GT

(T

C

= 25 ˚C)

Case Temperature (

T

C

) - ˚C

-65 -40 -15 +65 +110 +125+25

0

1.0

2.0

3.0

4.0

Ratio of

I

GT

I

GT

(T

C

= 25 ˚C)

Case Temperature (TC) - ˚C

123465 8 10 20 30 40 60 80 100

IGT = 5 mA MAX

IGT = 10 mA MAX

IGT = 20 mA

MAX

IGT = 3 mA MAX

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

DC Gate Trigger Current (IGT) - mA

Turn-On Time (t

gt

) - µSec

TC = 25 ˚C

Sensitive Triacs Data Sheets

Figure E1.9 Peak Surge Current versus Surge Current Duration

Figure E1.10 Power Dissipation (Typical) versus RMS On-state Current

(0.8 A and 1 A)

Figure E1.11 Power Dissipation (Typical) versus RMS On-state Current

(4 A, 6 A, and 8 A)

1 2436810204030 60 100 200 400 600 1000

1

2

3

4

6

10

8

20

30

40

60

100

80

150

200

Surge Current Duration – Full Cycles

Peak Surge (Non-Repetitive)

On-State Current (I

TSM

) – Amps

8 A

6 A

0.8 A

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-state Current: [I

T(RMS)

]: Maximum

Rated Value at Specified Case Temperature

NOTES:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

1 A

4 A

0 0.25 0.50 0.75 1.0 1.25 1.5

0

0.5

1.0

1.5

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation

[P

D(AV)

] – Watts

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

1 A

0.8 A

0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

8.0

6 A and 8 A

4 A

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation

[P

D(AV)

] – Watts

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

Selected Packages*

U.L. RECOGNIZED

File #E71639

Triacs

(0.8 A to 35 A)

E2

General Description

These gated triacs from Teccor Electronics are part of a broad line of bidirectional semiconductors. The devices range in current ratings from 0.8 A to 35 A and in voltages from 200 V to 1000 V.

The triac may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the gate and MT1.

Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. This feature facilitates the use of low-cost assembly and convenient packaging techniques. Tape-and-reel capability is available. See “Packing Options” section of this catalog.

All Teccor triacs have glass-passivated junctions to ensure longterm device reliability and parameter stability. Teccor's glass-passivated junctions offer a rugged, reliable barrier against junction contamination.

Variations of devices covered in this data sheet are available for custom design applications. Consult factory for more information.

Features

• Electrically-isolated packages

• Glass-passivated junctions

• Voltage capability — up to 1000 V

• Surge capability — up to 200 A

Compak Package

• Surface mount package — 0.8 A and 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

E2

MT2 MT1

G

TO-202 *TO-220

3-lead

Compak

TO-92

TO-251

V-P ak

TO-263

D

2

Pak

TO-92

TO-252

D-Pak

*TO-3

Fastpak

Triacs Data Sheets

See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5.

I

T(RMS)

Part Number

V

DRM

I

GT

Isolated Non-isolated

(4)

TO-92 TO-220 Compak TO-202 TO-220

TO-252

D-Pak

TO-251

V-Pa k

TO-263

D

2

Pak

(1)

Volt s

(3) (7) (15)

mAmps

QI QII QIII QIV QIV

MAX See “Package Dimensions” section for variations. (11) MIN MAX TYP

0.8 A

Q2X8E3 Q2X3 200 10 10 10 25

Q4X8E3 Q4X3 400 10 10 10 25

Q6X8E3 Q6X3 600 10 10 10 25

Q2X8E4 Q2X4 200 25 25 25 50

Q4X8E4 Q4X4 400 25 25 25 50

Q6X8E4 Q6X4 600 25 25 25 50

1A

Q201E3 Q2N3 200 101010 25

Q401E3 Q4N3 400 101010 25

Q601E3 Q6N3 600 101010 25

Q201E4 Q2N4 200 252525 50

Q401E4 Q4N4 400 252525 50

Q601E4 Q6N4 600 252525 50

4A

Q2004L3 Q2004F31 Q2004D3 Q2004V3 200 10 10 10 25

Q4004L3 Q4004F31 Q4004D3 Q4004V3 400 10 10 10 25

Q6004L3 Q6004F31 Q6004D3 Q6004V3 600 10 10 10 25

Q2004L4 Q2004F41 Q2004D4 Q2004V4 200 25 25 25 50

Q4004L4 Q4004F41 Q4004D4 Q4004V4 400 25 25 25 50

Q6004L4 Q6004F41 Q6004D4 Q6004V4 600 25 25 25 50

Q8004L4 Q8004D4 Q8004V4 800 25 25 25 50

QK004L4 QK004D4 QK004V4 1000 25 25 25 50

6A

Q2006L4 Q2006F41 Q2006R4 Q2006N4 200 25 25 25 50

Q4006L4 Q4006F41 Q4006R4 Q4006N4 400 25 25 25 50

Q6006L5 Q6006F51 Q6006R5 Q6006N5 600 50 50 50 75

Q8006L5 Q8006R5 Q8006N5 800 50 50 50 75

QK006L5 QK006R5 QK006N5 1000 50 50 50 75

8A

Q2008L4 Q2008F41 Q2008R4 Q2008N4 200 25 25 25 50

Q4008L4 Q4008F41 Q4008R4 Q4008N4 400 25 25 25 50

Q6008L5 Q6008F51 Q6008R5 Q6008N5 600 50 50 50 75

Q8008L5 Q8008R5 Q8008N5 800 50 50 50 75

QK008L5 QK008R5 QK008N5 1000 50 50 50 75

MT1

G

MT2

MT1

MT2

G

MT1

MT2

MT1

G

MT2

MT1

G

MT2

MT1

G

MT2

G

MT1

MT2

MT1

G

Data Sheets Triacs

See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5.

I

DRM

V

TM

V

GT

I

HIGTM

P

GM

P

G(AV)ITSM

dv/dt(c) dv/dt

t

gt

I2t di/dt

(1) (16)

mAmps

(1) (5)

Volt s

(2) (6)

(15) (18)

(19)

Volt s

(1) (8)

(12)

mAmps

(14)

Amps

(14)

Watts Watts

(9) (13)

Amps

(1) (4) (13)

Vol ts/µ Sec

(1)

Volts/ µSec

(10)

µSec Amp

2

Sec Amps/µSec

T

C

=

25 °C

TC =

100 °C

TC =

125 °C

TC =

25 °C

TC =

25 °C 60/50 Hz

TC=

100 °C

TC=

125 °C

MAX MAX MAX MAX TYP MIN TYP

0.02 0.5 1 1.6 2 15 1 10 0.2 10/8.3 1 40 30 2.5 0.41 20

0.02 0.5 1 1.6 2 15 1 10 0.2 10/8.3 1 35 25 2.5 0.41 20

0.02 0.5 1 1.6 2 15 1 10 0.2 10/8.3 1 25 15 2.5 0.41 20

0.02 0.5 1 1.6 2.5 25 1 10 0.2 10/8.3 1 50 40 3 0.41 20

0.02 0.5 1 1.6 2.5 25 1 10 0.2 10/8.3 1 45 35 3 0.41 20

0.02 0.5 1 1.6 2.5 25 1 10 0.2 10/8.3 1 35 25 3 0.41 20

0.02 0.5 1 1.6 2 15 1 10 0.2 20/16.7 1 40 30 2.5 1.6 30

0.02 0.5 1 1.6 2 15 1 10 0.2 20/16.7 1 30 20 2.5 1.6 30

0.02 0.5 1 1.6 2.5 25 1 10 0.2 20/16.7 1 50 40 3 1.6 30

0.02 0.5 1 1.6 2.5 25 1 10 0.2 20/16.7 1 40 30 3 1.6 30

0.05 0.5 2 1.6 2 20 1.2 15 0.3 55/46 2 50 40 2.5 12.5 50

0.05 0.5 2 1.6 2 20 1.2 15 0.3 55/46 2 40 30 2.5 12.5 50

0.05 0.5 2 1.6 2.5 30 1.2 15 0.3 55/46 2 100 75 3 12.5 50

0.05 0.5 2 1.6 2.5 30 1.2 15 0.3 55/46 2 75 50 3 12.5 50

0.05 0.5 2 1.6 2.5 30 1.2 15 0.3 55/46 2 60 40 3 12.5 50

0.05 3 1.6 2.5 30 1.2 15 0.3 55/46 2 50 3 12.5 50

0.05 0.5 2 1.6 2.5 50 1.6 18 0.5 80/65 4 200 120 3 26.5 70

0.05 0.5 2 1.6 2.5 50 1.6 18 0.5 80/65 4 150 100 3 26.5 70

0.05 0.5 2 1.6 2.5 50 1.6 18 0.5 80/65 4 125 85 3 26.5 70

0.05 3 1.6 2.5 50 1.6 18 0.5 80/65 4 100 3 26.5 70

0.05 0.5 2 1.6 2.5 50 1.8 20 0.5 100/83 4 250 150 3 41 70

0.05 0.5 2 1.6 2.5 50 1.8 20 0.5 100/83 4 220 125 3 41 70

0.05 0.5 2 1.6 2.5 50 1.8 20 0.5 100/83 4 150 100 3 41 70

0.05 3 1.6 2.5 50 1.8 20 0.5 100/83 4 100 3 41 70

Triacs Data Sheets

Specific Test Conditions

di/dt — Maximum rate-of-change of on-state current; IGT = 200 mA with

≤0.1

µs rise time

dv/dt — Critical rate-of-rise of off-state voltage at rated V

DRM

gate open

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

DRM

and I

T(RMS)

commutating di/dt = 0.54 rated I

T(RMS)

/ms; gate

unenergized

I

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

DRM

— Peak off-state current, gate open; V

DRM

= maximum rated value

I

GT

— DC gate trigger current in specific operating quadrants;

V

D

= 12 V dc

I

GTM

— Peak gate trigger current

I

H

— Holding current (DC); gate open

I

T(RMS)

— RMS on-state current conduction angle of 360°

I

TSM

— Peak one-cycle surge

P

G(AV)

— Average gate power dissipation

P

GM

— Peak gate power dissipation; I

GT

≤ I

GTM

tgt — Gate controlled turn-on time; IGT = 200 mA with 0.1 µs rise time

V

DRM

— Repetitive peak blocking voltage

V

GT

— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω

V

TM

— Peak on-state voltage at maximum rated RMS current

General Notes

• All measurements are made at 60 Hz with a resistive load at an

ambient temperature of +25 °C unless specified otherwise.

• Operating temperature range (T

J

) is -65 °C to +125 °C for TO-92,

-25 °C to +125 °C for Fastpak, and -40 °C to +125 °C for all other devices.

• Storage temperature range (T

S

) is -65 °C to +150 °C for TO-92,

-40 °C to +150 °C for TO-202, and -40 °C to +125 °C for all other devices.

• Lead solder temperature is a maximum of 230 °C for 10 seconds, maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (T

C

) is measured as shown on the dimensional outline drawings. See “Package Dimensions” section of this catalog.

I

T(RMS)

Part Number

V

DRM

I

GT

I

DRM

Isolated Non-isolated

(4) (16)

TO-3

Fastpak TO-220 TO -202 TO-220

TO-263

D

2

Pak

(1)

Volt s

(3) (7) (15)

mAmps

(1) (16)

mAmps

QI QII QIII QIV QIV

T

C

=

25 °C

TC =

100 °C

TC =

125 °C

MAX See “Package Dimensions” section for variations. (11) MIN MAX TYP MAX

10 A

Q2010L4 Q2010R4 Q2010N4 200 25 25 25 50 0.05 1

Q4010L4 Q4010R4 Q4010N4 400 25 25 25 50 0.05 1

Q6010L4 Q6010R4 Q6010N4 600 25 25 25 50 0.05 1

Q8010L4 Q8010R4 Q8010N4 800 25 25 25 50 0.1 1

QK010L4 QK010R4 QK010N4 1000 25 25 25 50 0.1 3

Q2010L5 Q2010F51 Q2010R5 Q2010N5 200 50 50 50 75 0.05 0.5 2

Q4010L5 Q4010F51 Q4010R5 Q4010N5 400 50 50 50 75 0.05 0.5 2

Q6010L5 Q6010F51 Q6010R5 Q6010N5 600 50 50 50 75 0.05 0.5 2

Q8010L5 Q8010R5 Q8010N5 800 50 50 50 75 0.1 0.5 2

QK010L5 QK010R5 QK010N5 1000 50 50 50 75 0.1 3

15 A

Q2015L5 Q2015R5 Q2015N5 200 50 50 50 0.05 0.5 2

Q4015L5 Q4015R5 Q4015N5 400 50 50 50 0.05 0.5 2

Q6015L5 Q6015R5 Q6015N5 600 50 50 50 0.05 0.5 2

Q8015L5 Q8015R5 Q8015N5 800 50 50 50 0.1 1 3

QK015L5 QK015R5 QK015N5 1000 50 50 50 0.1 3

25 A

Q2025R5 Q2025N5 200 50 50 50 0.1 1 3

Q4025R5 Q4025N5 400 50 50 50 0.1 1 3

Q6025R5 Q6025N5 600 50 50 50 0.1 1 3

Q8025R5 Q8025N5 800 50 50 50 0.1 1 3

QK025R5 QK025N5 1000 50 50 50 0.1 3

Q6025P5 600 505050 1200.1 5

Q8025P5 800 505050 1200.1 5

35 A

Q6035P5 600 50 50 50 120 0.1 5

Q8035P5 800 50 50 50 120 0.1 5

MT1

MT2

Gate

MT1

MT2

T

MT2

MT1

G

MT2

MT1

G

MT2

MT1

G

Data Sheets Triacs

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage (V

GT

) with reference to MT1

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E2.1 through Figure E2.7 for current rating at specific

operating temperature.

(5) See Figure E2.8 through Figure E2.10 for i

T

versus v

T

.

(6) See Figure E2.12 for VGT versus TC.

(7) See Figure E2.11 for I

GT

versus TC.

(8) See Figure E2.14 for I

H

versus TC.

(9) See Figure E2.13 for surge rating with specific durations.

(10) See Figure E2.15 for t

gt

versus IGT.

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices,

400 mA dc for 15 A to 35 A devices

(13) See Figure E2.1 through Figure E2.6 for maximum allowable case

temperature at maximum rated current.

(14) Pulse width ≤10

µs; IGT ≤ I

GTM

(15) RL = 60 Ω for 0.8 A to10 A triacs; RL = 30 Ω for 15 A to 35 A triacs

(16) T

C

= TJ for test conditions in off state

(17) I

GT

= 300 mA for 25 A and 35 A devices

(18) Quadrants I, II, III only

(19) Minimum non-trigger V

GT

at 125 °C is 0.2 V for all except 50 mA

MAX QIV devices which are 0.2 V at 110 °C.

Gate Characteristics

Teccor triacs may be turned on between gate and MT1 terminals in the following ways:

• In-phase signals (with standard AC line) using Quadrants I and III

• Application of unipolar pulses (gate always positive or negative), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses

However, due to higher gate requirements for Quadrant IV, it is recommended that only negative pulses be applied. If positive pulses are required, see “Sensitive Triacs” section of this catalog or contact the factory. Also, see Figure AN1002.8, “Amplified Gate” Thyristor Circuit.

V

TM

V

GT

I

H

I

GTM

P

GM

P

G(AV)

I

TSM

dv/dt(c) dv/dt

t

gt

I2t di/dt

(1) (5)

Vol ts

(2) (6) (15)

(18) (19)

Vol ts

(1) (8) (12)

mAmps

(14)

Amps

(14)

Watts Watts

(9) (13)

Amps

(1) (4) (13)

Volt s/µSe c

(1)

Volt s/µSec

(10) (17)

µSec Amps

2

Sec Amps/µSec

T

C

= 25 °C TC = 25 °C 60/50 Hz

T

C

=

100 °C

TC =

125 °C

MAX MAX MAX TYP MIN TYP

1.6 2.5 35 1.8 20 0.5 120/100 2 150 3 60 70

1.6 2.5 35 1.8 20 0.5 120/100 2 100 3 60 70

1.6 2.5 35 1.8 20 0.5 120/100 2 75 3 60 70

1.6 2.5 35 1.8 20 0.5 120/100 2 50 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 350 225 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 300 200 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 250 175 3 60 70

1.6 2.5 50 1.8 20 0.5 120/100 4 150 3 60 70

1.6 2.5 70 2 20 0.5 200/167 4 400 275 4 166 100

1.6 2.5 70 2 20 0.5 200/167 4 350 225 4 166 100

1.6 2.5 70 2 20 0.5 200/167 4 300 200 4 166 100

1.6 2.5 70 2 20 0.5 200/167 4 200 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 400 275 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 350 225 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 300 200 4 166 100

1.8 2.5 100 2 20 0.5 200/167 5 200 4 166 100

1.4 2.75 50 2 20 0.5 250/220 5 550 475 3 260 100

1.4 2.75 50 2 20 0.5 250/220 5 450 400 3 260 100

1.5 2.75 50 2 20 0.5 350/300 5 550 475 3 508 100

1.5 2.75 50 2 20 0.5 350/300 5 450 400 3 508 100

Triacs Data Sheets

In all cases, if maximum surge capability is required, pulses should be a minimum of one magnitude above I

GT

rating with a

steep rising waveform (≤1 µs rise time).

Definition of Quadrants

Electrical Isolation

Teccor’s isolated triac packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab or base, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.

* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.

* Mounted on 1 cm

2

copper foil surface; two-ounce copper foil

MT2 POSITIVE

(Positive Half Cycle)

MT2 NEGATIVE

(Negative Half Cycle)

MT1

MT2

+

I

GT

REF

QII

MT1

I

GT

GATE

MT2

REF

MT1

MT2

REF

MT1

MT2

REF

QI QIV

QIII

ALL POLARITIES ARE REFERENCED TO MT1

(-)

I

GT

GATE

(+)

I

GT

-

I

GT

GATE

(-)

I

GT

GATE

(+)

+

-

Electrical Isolation

from Leads to Mounting Tab *

VACRMS

TO-220

Isolated

Fastpak Isolated

2500 Standard Standard

4000 Optional ** N/A

Thermal Resistance (Steady State)

R

θ JC

[R

θ JA

] (TYP.) °C/W

Package Code PECFF2LR D V N

Typ e

TO-3

Fastpak TO-92

Compak

TO-202

Type 1

TO-202

Type 2

TO-220 Isolated

TO-220

Non-isolated

TO-252

D-Pak

TO-251

V-Pa k

TO-263

D

2

Pak

0.8 A 60 [135] 60 *

1 A 50 [95] 40 *

4A 3.5 [45] 6 [70] 3.6 [50] 3.5 6.0 [70]

6 A 3.8 3.3 1.8 [45] 1.8

8A 3.3 2.8 1.5 1.5

10 A 3.5 2.6 1.3 1.3

15 A 2.1 1.1 1.1

25 A 1.6 0.89 0.89

35 A 1.5

Data Sheets Triacs

Figure E2.1 Maximum Allowable Case Temperature versus On-state

Current (0.8 A and 1 A)

Figure E2.2 Maximum Allowable Case Temperature versus On-state

Current (4 A and 6 A)

Figure E2.3 Maximum Allowable Case Temperature versus

On-state Current (8 A and 10 A)

Figure E2.4 Maximum Allowable Case Temperature versus

On-state Current (10 A)

Figure E2.5 Maximum Allowable Case Temperature versus

On-state Current (15 A)

Figure E2.6 Maximum Allowable Case Temperature versus

On-state Current (25 A and 35 A)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – AMPS

Maximum Allowable Case Temperature (T

C

) –

˚

C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

1 A

0.8 A

01234567

0

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – Amps

Maximum Allowable Case Temperature (T

C

) –

˚

C

6 A TO-220 (Isolated) 6 A TO-202

6 A TO-220 (Non-isolated) 6 A D

2

Pak

4 A TO-220 (Isolated) 4 A TO-202 (Type 1 and 3) 4 A TO-252

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

4 A TO-202 (TYPE 2 and 4) 4 A TO-251

02468101214

0

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – AMPS

Maximum Allowable Case Temperature (T

C

) – ˚C

10 A TO-220 (Isolated)

8 A TO-220 (Non-isolated) 8 A D

2

Pak

8 A TO-202 8 A TO-220 (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

02468101214

0

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

10 A TO-202

10 A TO-220 (Non-isolated) 10 A D

2

Pak

051015

0

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – AMPS

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

15 A TO-220 (Non-isolated) 15 A D

2

Pak

15 A TO-220 (Isolated)

0 1020304050

50

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

25 A TO-220 (Non-isolated) 25 A D

2

Pak

25 A TO-3 Fastpak 35 A TO-3 Fastpak

Triacs Data Sheets

Figure E2.7 Maximum Allowable Ambient Temperature versus

On-state Current

Figure E2.8 On-state Current versus On-state Voltage (Typical)

(0.8 A and 1 A)

Figure E2.9 On-state Current versus On-state Voltage (Typical)

(4 A, 6 A, 8 A, and 10 A)

Figure E2.10 On-state Current versus On-state Voltage (Typical)

(15 A and 25 A)

Figure E2.11 Normalized DC Gate Trigger Current for All Quadrants

versus Case Temperature

Figure E2.12 Normalized DC Gate Trigger Voltage for All Quadrants

versus Case Temperature

120

100

80

60

40

25 20

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

TO-220 Devices and TO-202 (Type 1 and 3)

RMS On-state Current [I

T (RMS)

] — Amps

Maximum Allowable Ambient Temperature (T

A

) — ˚C

1 A TO-92

0.8 A TO-92

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

FREE AIR RATING – NO HEATSINK

TO-202 (TYPE 2 and 4) TO-251

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0

1

2

3

4

5

6

7

8

9

10

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Positive or Negative Instantaneous On-state Current (i

T

) – Amps

T

C

= 25 ˚C

1 A

0.8 A

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0

2

4

6

8

10

12

14

16

18

20

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Positive or Negative Instantaneous

On-state Current (i

T

) – Amps

TC = 25 ˚C

6-10 A

4A

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0

10

20

30

40

50

60

70

80

90

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Positive or Negative Instantaneous

On-state Current (i

T

) – Amps

TC = 25 ˚C

15 A and 25 A

15 A and 25 A Fastpak

-65 -40 -15 +25 +65 +125

1.0

2.0

3.0

4.0

Case Temperature (TC) – ˚C

Ratio of

I

GT

I

GT

(T

C

= 25 ˚C)

-65 -15-40 +25 +65 +125

0

.5

1.0

1.5

2.0

Case Temperature (TC) – ˚C

Ratio of

V

GT

V

GT

(T

C

= 25 ˚C)

Data Sheets Triacs

Figure E2.13 Peak Surge Current versus Surge Current Duration

Figure E2.14 Normalized DC Holding Current versus Case Temperature Figure E2.15 Turn-on Time versus Gate Trigger Current (Typical)

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [l

T(RMS)

]: Maximum

Rated Value at Specified Case Temperature

NOTES:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

25 A TO

-220

15 A

10 A

8 A

4 A

1 A

6 A

1

10

20

30

40

50

60

80

100

120

300

400

1000

1 10 100 1000

Surge Current Duration – Full Cycles

Peak Surge (Non-repetitive) On-state Current (l

TSM

) – Amps

200

0.8 A

25 A Fastpak

35 A Fastpak

-65 -40 -15 +25 +65 +125

1.0

2.0

3.0

4.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

INITIAL ON-STATE CURRENT = 200 mA DC 0.8 A - 10 A Devices = 400 mA DC 15 A - 25 A Devices

0

0 25 50 75 100 125 150 175 200 225 250 275 300

1

2

3

4

5

6

7

8

Typical Turn-on Time (t

gt

) – µSec

DC Gate Trigger Current (lGT) – mA

Devices with

l

GT

= 10 mA

Devices with

l

GT

= 25 mA

Devices with

l

GT

= 50 mA

TC = 25 ˚C

Triacs Data Sheets

Figure E2.16 Power Dissipation (Typical) versus On-state Current

(0.8 A and 1 A)

Figure E2.17 Power Dissipation (Typical) versus On-state Current

(6 A to 10 A and 15 A)

Figure E2.18 Power Dissipation (Typical) versus On-state Current

(25 A to 35 A)

Figure E2.19 Power Dissipation (Typical) versus RMS On-state Current

(4 A)

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation

[P

D(AV)

] – Watts

0 0.25 0.50 0.75 1.0 1.25

0

0.5

1.0

1.5

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

1 A

0.8 A

012345678910111213141516

0

2

4

6

8

10

12

14

16

18

RMS On-state Current [l

T(RMS)

] – Amps

Average On-state Power Dissipation [P

D(AV)

] – Watts

6-10 A

15 A

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

0 8 16 24 32 40

0

5

10

15

20

25

30

35

40

45

RMS On-state Current [l

T(RMS)

] – Amps

Average On-state Power Dissipation [P

D(AV)

] – Watts

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

25 A

25 A - 35 A Fastpaks

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation

[P

D(AV)

] – Watts

0 1.0 2.0 3.0 4.0

0

1.0

2.0

3.0

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

4 A

4.0

U.L. RECOGNIZED

File #E71639

Quadrac

Internally Triggered Triacs (4 A to 15 A)

E3

General Description

Te cc o r’ s Quadrac devices are triacs that include a diac trigger mounted inside the same package. This device, developed by Teccor, saves the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac. Also, the alternistor Quadrac device (QxxxxLTH) eliminates the need for a snubber network.

The Quadrac device is a bidirectional AC switch and is gate controlled

for either polarity of main terminal voltage. Its primary purpose is for AC switching and phase control applications such as speed controls, temperature modulation controls, and lighting controls where noise immunity is required.

Triac current capacities range from 4 A to 15 A with voltage ranges from 200 V to 600 V. Quadrac devices are available in the TO-220 package.

The TO-220 package is electrically isolated to 2500 V rms from the leads to mounting surface. 4000 V rms is available on special order. This means that no external isolation is required, thus eliminating the need for separate insulators and insulator-mounting steps and saving dollars over “hot tab” devices.

All Teccor triac and diac chips have glass-passivated junctions to ensure long-term device reliability and parameter stability.

Variations of devices in this data sheet are available for custom design applications. Consult the factory for more information.

Features

• Glass-passivated junctions

• Electrically-isolated package

• Internal trigger diac

• High surge capability — up to 200 A

• High voltage capability — 200 V to 600 V

TO-220

Isolated

MT2 MT1

T

E3

Quadrac Data Sheets

Specific Test Conditions

[∆V±] — Dynamic breakback voltage (forward and reverse) ∆V

BO

— Breakover voltage symmetry

C

T

— Trigger firing capacitance di/dt — Maximum rate-of-change of on-state current dv/dt — Critical rate-of-rise of off-state voltage at rated V

DRM

gate open

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

DRM

and I

T(RMS)

commutating di/dt = 0.54 rated I

T(RMS)

/ms; gate

unenergized

I

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

BO

— Peak breakover current

I

DRM

— Peak off-state current gate open; V

DRM

= maximum rated value

I

GTM

— Peak gate trigger current (10 µs Max)

I

H

— Holding current; gate open

I

T(RMS)

— RMS on-state current, conduction angle of 360°

I

TSM

— Peak one-cycle surge

t

gt

— Gate controlled turn-on time

V

BO

— Breakover voltage (forward and reverse)

V

DRM

— Repetitive peak blocking voltage

V

TM

— Peak on-state voltage at maximum rated RMS current

General Notes

• All measurements are made at 60 Hz with resistive load at an ambi-

ent temperature of +25 °C unless otherwise specified.

• Operating temperature range (T

J

) is -40 °C to +125 °C.

• Storage temperature range (T

S

) is -40 °C to +125 °C.

• Lead solder temperature is a maximum of +230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (T

C

) is measured as shown on dimensional outline drawings. See “Package Dimensions” section of this catalog.

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1

(2) See Figure E3.1 for I

H

versus TC.

(3) See Figure E3.4 and Figure E3.5 for i

T

versus vT.

(4) See Figure E3.9 for surge ratings with specific durations.

I

T(RMS)

Part No.

V

DRM

I

DRM

V

TM

Trigger Diac Specifications (T–MT1)

Isolated ∆V

BO

V

BO

[∆V± ]IBOC

T

(5)

TO-220

(1)

Vol ts

(1) (10)

mAmps

(1) (3)

Volts

(7)

Volt s

(6)

Vol ts

(6)

Volts µAmps

(11)

µFarads

T

C

=

25 °C

TC =

100 °C

TC =

125 °C T

C

= 25 °C

See “Package Dimensions” section

for variations. (12) MIN MAX MAX MAX MIN MAX MIN MAX MAX

4A

Q2004LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4004LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6004LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

6A

Q2006LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4006LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6006LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4006LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6006LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

8A

Q2008LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4008LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6008LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4008LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6008LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

10 A

Q2010LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4010LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6010LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4010LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6010LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

15 A

Q2015LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4015LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6015LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4015LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6015LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

MT1

MT2

T

Data Sheets Quadrac

(5) See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at

specific operating temperature.

(6) See Figure E3.2 and Figure E3.3 for test circuit. (7) ∆V

BO

= [+ VBO] - [- VBO]

(8) See Figure E3.7 and Figure E3.8 for maximum allowable case

temperature at maximum rated current. (9) Trigger firing capacitance = 0.1 µF with 0.1 µs rise time (10) T

C

= TJ for test conditions in off state

(11) Maximum required value to ensure sufficient gate current (12) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

Electrical Isolation

All Teccor isolated Quadrac packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.

* UL Recognized File #E71639 **For 4000 V isolation, use “V” suffix in part number.

I

H

I

TSM

dv/dt(c) dv/dt

t

gt

I2t

I

GTM

di/dt

(1) (2)

mAmps

(4) (8)

Amps

(1) (5) (8)

Volts/ µSec

(1)

Volt s/µSe c

(6) (9)

µSec Amps

2

Sec Amps

(9)

Amps/µSec

T

C

=

100 °C

TC =

125 °C

MAX 60/50Hz MIN MIN TYP

40 55/46 3 75 50 3 12.5 1.2 50

40 55/46 3 50 50 3 12.5 1.2 50

50 80/65 4 150 100 3 26.5 1.5 70

50 80/65 4 125 85 3 26.5 1.5 70

50 80/65 25 575 450 3 26.5 1.5 70

50 80/65 25 425 350 3 26.5 1.5 70

60 100/83 4 175 120 3 41 1.5 70

60 100/83 4 150 100 3 41 1.5 70

60 100/83 25 575 450 3 41 1.5 70

60 100/83 25 425 350 3 41 1.5 70

60 120/100 4 200 150 3 60 1.5 70

60 120/100 4 175 120 3 60 1.5 70

60 120/100 30 925 700 3 60 1.5 70

60 120/100 30 775 600 3 60 1.5 70

70 200/167 4 300 200 3 166 1.5 100

70 200/167 4 200 150 3 166 1.5 100

70 200/167 30 925 700 3 166 1.5 100

70 200/167 30 775 600 3 166 1.5 100

Thermal Resistance (Steady State)

R

θJC

[R

θJA

] °C/W (TYP)

TYPE Isolated TO-220

4A 3.6 [50]

6A 3.3

8A 2.8

10 A 2.6

15 A 2.1

Electrical Isolation

from Leads to Mounting Tab *

V AC RMS TYPE

2500 Standard

4000 Optional **

Quadrac Data Sheets

Figure E3.1 Normalized DC Holding Current versus Case Temperature

Figure E3.2 Test Circuit

Figure E3.3 Test Circuit Waveforms

Figure E3.4 On-state Current versus On-state Voltage (Typical)

(4 A to 10 A)

Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)

Figure E3.6 Maximum Allowable Ambient Temperature versus

On-state Current

Case Temperature (TC) – ˚C

-40 -15 +25 +65 +105

I

H

I

H

(T

C

= 25 ˚C)

2.0

1.5

1.0

.5

0

INITIAL ON-STATE CURRENT = 200 mA DC 4 A to 10 A = 400 mA DC 15 A

Ratio of

+125

120 V 60 Hz

R

L

D.U.T.

MT2

MT1

V

C

T

= 0.1 µF

T

V

C

∆V+

-V

BO

∆V-

+V

BO

20

18

16

14

12

10

8

6

4

2

0

0 0.6 0.8 1.0 1.2 1.4 1.6

Positive or Negative

Instantaneous On-state Current (i

T

) – Amps

Positive or Negative

Instantaneous On-state Voltage (v

T

) – Volts

6 A, 8 A, and 10 A

4 A

TC = 25 ˚C

90

80

70

60

50

40

30

20

10

0

0.6

0.8

1.0

1.2

1.4

1.6

Positive or Negative

Instantaneous On-state Current (i

T

) – Amps

15 A

TC = 25˚C

1.8

Positive or Negative

Instantaneous On-state Voltage (v

T

) – Volts

120

100

80

60

40

20

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable Ambient Temperature (T

A

) – ˚C

25

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

4 A

Data Sheets Quadrac

Figure E3.7 Maximum Allowable Case Temperature versus

On-state Current (4 A)

Figure E3.8 Maximum Allowable Case Temperature versus

On-state Current (6 A to 15 A)

Figure E3.9 Peak Surge Current versus Surge Current Duration

Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)

Figure E3.11 Power Dissipation (Typical) versus On-state Current

(6 A to 10 A and 15 A)

Figure E3.12 Normalized diac V

BO

versus Junction Temperature

RMS On-state Current [I

T(RMS)

] – Amps

0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawings

130

120

110

100

90

80

70

600

4 A

RMS On-state Current [I

T(RMS)

] – Amps

0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawings

130

120

110

100

90

80

70

60

0

6 A

10 A

8 A

15 A

200

120

40

1 2 3 4 5 6 8 10 20 3040 60 80 100 200 300 600 1000

80

60 50

100

8 6

5

10

30

20

4

1

3

2

Surge Current Duration – Full Cycles

Peak Surge (Non-repetitive)

On-state Current (I

TSM

) – Amps

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I

T(RMS)

]: Maximum

Rated Value at Specified Case Temperature

NOTES:

1) Gates control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady state rated value.

15 A

10 A

8 A

6 A

4 A

Average On-state Power Dissipation [P

D(AV)

] – Watts

RMS On-state Current [I

T(RMS)

] – Amps

4.0

3.0

2.0

1.0

0

1.0

2.0

3.0

4.0

5.0

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚

4 A

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360

˚

18

16

14

12

10

8

6

4

2

0

16

14

12

10

8

6

4

2

0

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation [P

D(AV)

] – Watts

15 A

6 A to 10 A

-8

-6

-4

-2

0

+2

+4

-40 -20 0 +20 +40 +60 +80 +100 +120

+140

Junction Temperature (TJ) – ˚C

Percentage of V

BO

Change – %

Notes

Selected Packages*

U.L. RECOGNIZED

File #E71639

Alternistor Triacs

(6 A to 40 A)

E4

General Description

Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically designed for applications that switch highly inductive loads. A special chip offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back), providing better turn-off behavior than a standard triac. An alternistor may be triggered from a blocking to conduction state for either polarity of applied AC voltage with operating modes in Quadrants I, II, and III.

This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.

All alternistors have glass-passivated junctions to ensure longterm reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination.

Teccor's TO-218X package is designed for heavy, steady powerhandling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms

.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.

Features

• High surge current capability

• Glass-passivated junctions

• 2500 V ac isolation for L, J, and K Packages

• High commutating dv/dt

• High static dv/dt

*TO-220

*TO-218

*TO-218X

MT2 MT1

G

E4

TO-263

D

2

Pak

TO-252

D-Pak

TO-251

V-Pak

Alternistor Triacs Data Sheets

See “General Notes” and “Electrical Specification Notes” on page E4 - 5.

I

T(RMS)

Part Number

V

DRM

I

GT

I

DRM

Isolated Non-isolated

(4)(16)

T0-220 TO-220

TO-251

V-Pa k

TO-252

D-Pak

TO-263

D

2

Pak

(1)

Volt s

(3) (7) (15) (17)

mAmps

(1) (18)

mAmps

QI QII QIII

T

C

=

25 °C

TC =

100 °C

TC =

125 °C

MAX See “Package Dimensions” section for variations. (11) MIN MAX MAX

6A

Q2006VH3 Q2006DH3 200 10 10 10 0.01 0.5 2

Q4006VH3 Q4006DH3 400 10 10 10 0.01 0.5 2

Q6006VH3 Q6006DH3 600 10 10 10 0.01 0.5 2

Q8006VH3 Q8006DH3 800 10 10 10 0.01 0.5 2

QK006VH3 QK006DH3 1000 10 10 10 0.02 2

Q2006VH4 Q2006DH4 200 35 35 35 0.01 0.5 2

Q4006VH4 Q4006DH4 400 35 35 35 0.01 0.5 2

Q6006VH4 Q6006DH4 600 35 35 35 0.01 0.5 2

Q8006VH4 Q8006DH4 800 35 35 35 0.01 0.5 2

QK006VH4 QK006DH4 1000 35 35 35 0.02 2

Q2006LH4 Q2006RH4 Q2006NH4 200 35 35 35 0.01 0.5 2

Q4006LH4 Q4006RH4 Q4006NH4 400 35 35 35 0.01 0.5 2

Q6006LH4 Q6006RH4 Q6006NH4 600 35 35 35 0.01 0.5 2

Q8006LH4 Q8006RH4 Q8006NH4 800 35 35 35 0.01 0.5 2

QK006LH4 QK006RH4 QK006NH4 1000 35 35 35 0.02 3

8A

Q2008VH3 Q2008DH3 200 10 10 10 0.01 0.5 2

Q4008VH3 Q4008DH3 400 10 10 10 0.01 0.5 2

Q6008VH3 Q6008DH3 600 10 10 10 0.01 0.5 2

Q8008VH3 Q8008DH3 800 10 10 10 0.01 0.5 2

QK008VH3 QK008DH3 1000 10 10 10 0.02 2

Q2008VH4 Q2008DH4 200 35 35 35 0.01 0.5 2

Q4008VH4 Q4008DH4 400 35 35 35 0.01 0.5 2

Q6008VH4 Q6008DH4 600 35 35 35 0.01 0.5 2

Q8008VH4 Q8008DH4 800 35 35 35 0.01 0.5 2

QK008VH4 QK008DH4 1000 35 35 35 0.02 2

Q2008LH4 Q2008RH4 Q2008NH4 200 35 35 35 0.01 0.5 2

Q4008LH4 Q4008RH4 Q4008NH4 400 35 35 35 0.01 0.5 2

Q6008LH4 Q6008RH4 Q6008NH4 600 35 35 35 0.01 0.5 2

Q8008LH4 Q8008RH4 Q8008NH4 800 35 35 35 0.01 0.5 2

QK008LH4 QK008RH4 QK008NH4 1000 35 35 35 0.02 3

10 A

Q2010LH5 Q2010RH5 Q2010NH5 200 50 50 50 0.01 0.5 2

Q4010LH5 Q4010RH5 Q4010NH5 400 50 50 50 0.01 0.5 2

Q6010LH5 Q6010RH5 Q6010NH5 600 50 50 50 0.01 0.5 2

Q8010LH5 Q8010RH5 Q8010NH5 800 50 50 50 0.01 0.5 2

QK010LH5 QK010RH5 QK010NH5 1000 50 50 50 0.02 3

12 A

Q2012LH5 Q2012RH5 Q2012NH5 200 50 50 50 0.01 0.5 2

Q4012LH5 Q4012RH5 Q4012NH5 400 50 50 50 0.01 0.5 2

Q6012LH5 Q6012RH5 Q6012NH5 600 50 50 50 0.01 0.5 2

Q8012LH5 Q8012RH5 Q8012NH5 800 50 50 50 0.01 0.5 2

QK012LH5 QK012RH5 QK012NH5 1000 50 50 50 0.02 3

MT1

MT2

G

MT1

G

MT2

G

MT1

MT2

MT1

G

MT2

MT1

G

Data Sheets Alternistor Triacs

See “General Notes” and “Electrical Specification Notes” on page E4 - 5.

V

GT

V

TM

I

H

I

GTMPGMPG(AV)

I

TSM

dv/dt(c) dv/dt

t

gt

I2t di/dt

(2) (6)

(15) (17)

(20)

Volt s

(1) (5)

Volt s

(1) (8)

(12)

mAmps

(14)

Amps

(14)

Watts Watts

(9) (13)

Amps

(1) (4) (13)

Volt s/µSe c

(1)

Volt s/µSec

(10)

µSec Amps

2

Sec

(19)

Amps/µSec

T

C

= 25 °C 60/50 Hz TC = 100 °C TC = 125 °C

MAX MAX MAX MIN MIN TYP

1.3 1.6 15 1.6 18 0.4 65/55 20 100 75 4 17.5 70

1.3 1.6 15 1.6 18 0.4 65/55 20 75 50 4 17.5 70

1.3 1.6 15 1.6 18 0.4 65/55 20 50 40 4 17.5 70

1.3 1.6 15 1.6 18 0.4 65/55 20 40 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 500 400 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 400 300 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 300 200 4 17.5 70

1.3 1.6 35 1.6 18 0.5 65/55 25 150 4 17.5 70

1.3 1.6 35 1.6 18 0.5 85/80 25 750 600 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 575 450 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 425 350 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 300 250 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 150 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 100 75 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 75 50 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 50 40 4 30 70

1.3 1.6 15 1.6 18 0.4 85/80 20 40 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 750 400 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 575 450 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 425 350 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 300 250 4 30 70

1.3 1.6 35 1.6 18 0.5 85/80 25 150 4 30 70

1.3 1.6 35 2 20 0.5 100/83 25 500 400 4 41 70

1.3 1.6 35 2 20 0.5 100/83 25 400 300 4 41 70

1.3 1.6 35 2 20 0.5 100/83 25 300 200 4 41 70

1.3 1.6 35 2 20 0.5 100/83 25 150 4 41 70

1.3 1.6 50 2 20 0.5 120/110 30 11 50 1000 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 1000 750 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 850 650 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 650 500 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 300 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 1150 1000 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 1000 750 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 850 650 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 650 500 4 60 70

1.3 1.6 50 2 20 0.5 120/110 30 300 4 60 70

Alternistor Triacs Data Sheets

See “General Notes” and “Electrical Specification Notes” on page E4 - 5.

Test Conditions

di/dt — Maximum rate-of-change of on-state current

dv/dt — Critical rate-of-rise of off-state voltage at rated V

DRM

gate open

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V

DRM

and I

T(RMS)

commutating di/dt = 0.54 rated I

T(RMS)

/ms; gate

unenergized

I

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

DRM

— Peak off-state current gate open; V

DRM

= maximum rated value

I

GT

— DC gate trigger current in specific operating quadrants;

V

D

= 12 V dc

I

GTM

— Peak gate trigger current

I

H

— Holding current (DC); gate open

I

T(RMS)

— RMS on-state current conduction angle of 360°

I

TSM

— Peak one-cycle surge

P

G(AV)

— Average gate power dissipation

P

GM

— Peak gate power dissipation; I

GT

≤ I

GTM

tgt — Gate controlled turn-on time; IGT = 300 mA with 0.1 µs rise time

V

DRM

— Repetitive peak blocking voltage

V

GT

— DC gate trigger voltage; VD = 12 V dc

V

TM

— Peak on-state voltage at maximum rated RMS current

I

T(RMS)

Part Number

V

DRM

I

GT

Isolated Non-isolated

(4)(16)

T0-220

TO-218

(16) TO-218X TO-220

TO-263

D

2

Pak

(1)

Volt s

(3) (7) (15) (17)

mAmps

QI QII QIII

MAX See “Package Dimensions” section for variations. (11) MAX

16 A

Q2016LH3 Q2016RH3 Q2016NH3 200 20 20 20

Q4016LH3 Q4016RH3 Q4016NH3 400 20 20 20

Q6016LH3 Q6016RH3 Q6016NH3 600 20 20 20

Q8016LH3 Q8016RH3 Q8016NH3 800 20 20 20

QK016LH3 QK016RH3 QK016NH3 1000 20 20 20

Q2016LH4 Q2016RH4 Q2016NH4 200 35 35 35

Q4016LH4 Q4016RH4 Q4016NH4 400 35 35 35

Q6016LH4 Q6016RH4 Q6016NH4 600 35 35 35

Q8016LH4 Q8016RH4 Q8016NH4 800 35 35 35

QK016LH4 QK016RH4 QK016NH4 1000 35 35 35

Q2016LH6 Q2016RH6 Q2016NH6 200 80 80 80

Q4016LH6 Q4016RH6 Q4016NH6 400 80 80 80

Q6016LH6 Q6016RH6 Q6016NH6 600 80 80 80

Q8016LH6 Q8016RH6 Q8016NH6 800 80 80 80

QK016LH6 QK016RH6 QK016NH6 1000 80 80 80

25 A

Q2025L6 Q2025K6 Q2025J6 Q2025R6 Q2025NH6 200 80 80 80

Q4025L6 Q4025K6 Q4025J6 Q4025R6 Q4025NH6 400 80 80 80

Q6025L6 Q6025K6 Q6025J6 Q6025R6 Q6025NH6 600 80 80 80

Q8025L6 Q8025K6 Q8025J6 Q8025R6 Q8025NH6 800 80 80 80

QK025L6 QK025K6 QK025R6 QK025NH6 1000 80 80 80

30 A

Q2030LH5 200 50 50 50

Q4030LH5 400 50 50 50

Q6030LH5 600 50 50 50

35 A

Q2035RH5 Q2035NH5 200 50 50 50

Q4035RH5 Q4035NH5 400 50 50 50

Q6035RH5 Q6035NH5 600 50 50 50

40 A

Q2040K7 Q2040J7 200 100 100 100

Q4040K7 Q4040J7 400 100 100 100

Q6040K7 Q6040J7 600 100 100 100

Q8040K7 Q8040J7 800 100 100 100

QK040K7 1000 100 100 100

MT1

MT2

G

K

G

A

K

A

G

A

MT1

G

MT2

MT1

G

Data Sheets Alternistor Triacs

General Notes

• All measurements are made at 60 Hz with a resistive load at an

ambient temperature of +25 °C unless specified otherwise.

• Operating temperature range (T

J

) is -40 °C to +125 °C.

• Storage temperature range (T

S

) is -40 °C to +125 °C.

• Lead solder temperature is a maximum of 230 °C for 10 seconds

maximum ≥1/16" (1.59 mm) from case.

• The case temperature (T

C

) is measured as shown in the dimen-

sional outline drawings. See “Package Dimensions” section.

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1 terminal

(2) For either polarity of gate voltage (V

GT

) with reference to MT1

terminal

(3) See Gate Characteristics and Definition of Quadrants.

(4) See Figure E4.1 through Figure E4.4 for current rating at specific

operating temperature and Figure 4.16 for free air rating (no heat sink).

(5) See Figure E4.5 and Figure E4.6 for i

T

and vT.

(6) See Figure E4.7 for V

GT

versus TC.

(7) See Figure E4.8 for I

GT

versus TC.

(8) See Figure E4.9 for

IH versus TC.

(9) See Figure E4.10 and Figure E4.11 for surge rating with specific

durations.

I

DRM

V

GTVTMIH

I

GTM

P

GM

P

G(AV)

I

TSM

dv/dt(c) dv/dt

t

gt

I2t di/dt

(1) (18)

mAmps

(2) (6)

(15) (17)

(20)

Vol ts

(1) (5)

Vol ts

(1) (8)

(12)

mAmps

(14)

Amps

(14)

Watts Watts

(9) (13)

Amps

(1) (4) (13)

Vol ts/µ Sec

(1)

Vol ts/µSec

(10)

µSec Amps

2

Sec

(19)

Amps/µSec

T

C

=

25 °C

TC =

100 °C

TC =

125 °C

TC =

25 °C

TC =

25 °C 60/50 Hz

TC =

100 °C

TC =

125 °C

MAX MAX MAX MAX MIN MIN TYP

0.05 0.5 2 1.5 1.6 35 2 20 0.5 200/167 20 500 400 3 166 100

0.05 0.5 27 1.5 1.6 35 2 20 0.5 200/167 20 400 350 3 166 100

0.05 0.5 2 1.5 1.6 35 2 20 0.5 200/167 20 300 250 3 166 100

0.1 1 3 1.5 1.6 35 2 20 0.5 200/167 20 275 200 3 166 100

0.1 3 1.5 1.6 35 2 20 0.5 200/167 20 200 3 166 100

0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 650 500 3 166 100

0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 600 475 3 166 100

0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 500 400 3 166 100

0.1 1 3 2 1.6 50 2 20 0.5 200/167 25 425 350 3 166 100

0.1 3 2 1.6 50 2 20 0.5 200/167 25 300 3 166 100

0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 875 600 5 166 100

0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 800 520 5 166 100

0.1 1 3 2.5 1.6 70 2 20 0.5 200/167 30 700 475 5 166 100

0.1 3 2.5 1.6 70 2 20 0.5 200/167 30 350 5 166 100

0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 875 600 5 259 100

0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 800 520 5 259 100

0.1 1 3 2.5 1.8 100 2 20 0.5 250/208 30 700 475 5 259 100

0.1 3 2.5 1.8 100 2 20 0.5 250/208 30 400 5 259 100

0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 650 500 3 508 100

0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 600 475 3 508 100

0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 500 400 3 508 100

0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 650 500 3 508 100

0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 600 475 3 508 100

0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 500 400 3 508 100

0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 11 00 700 5 664 150

0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 1000 625 5 664 150

0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 900 575 5 664 150

0.2 5 2.5 1.8 120 4 40 0.8 400/335 50 500 5 664 150

Alternistor Triacs Data Sheets

(10) See Figure E4.12 for tgt versus IGT.

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) Initial on-state current = 400 mA dc for 16 A to 40 A devices and

100 mA for 6 A to 12 A devices.

(13) See Figure E4.1 through Figure E4.4 for maximum allowable case

temperature at maximum rated current.

(14) Pulse width ≤10 µs;

IGT ≤ I

GTM

(15) For 6 A to 12 A devices, RL = 60 Ω; 16 A and above, RL = 30 Ω

(16) 40 A pin terminal leads on K package can run 100 °C to 125 °C.

(17) Alternistor does not turn on in Quadrant IV.

(18) T

C

= T

J

for test conditions in off state

(19) I

GT

= 200 mA for 6 A to 12 A devices and 500 mA for 16 A to 40 A

devices with gate pulse having rise time of ≤0.1 µs.

(20) Minimum non-trigger V

GT

at 125 °C is 0.2 V.

Gate Characteristics

Teccor triacs may be turned on in the following ways:

• In-phase signals (with standard AC line) using Quadrants I and III

• Application of unipolar pulses (gate always negative), using Quadrants II and III with negative gate pulses

In all cases, if maximum surge capability is required, gate pulses should be a minimum of one magnitude above minimum I

GT

rating

with a steep rising waveform (≤1 µs rise time).

If QIV and QI operation is required (gate always positive), see Figure AN1002.8, “Amplified Gate” Thyristor Circuit.

Definition of Quadrants

Electrical Isolation

Teccor’s isolated alternistor packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.

* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.

* UL Recognized Product per UL File E71639 ** For 4000 V isolation, use V suffix in part number.

Electrical Isolation

from Leads to Mounting Tab *

VACRMS

TO-218

Isolated

TO-220

Isolated

TO-218X

Isolated

2500

Standard Standard Standard

4000

N/A Optional ** N/A

MT2 POSITIVE

(Positive Half Cycle)

MT2 NEGATIVE

(Negative Half Cycle)

MT1

MT2

+ I

GT

REF

QII

MT1

I

GT

GATE

MT2

REF

MT1

MT2

REF

MT1

MT2

REF

QI QIV

QIII

ALL POLARITIES ARE REFERENCED TO MT1

(-)

I

GT

GATE

(+)

I

GT

-

I

GT

GATE

(-)

I

GT

GATE

(+)

+

-

NOTE: Alternistors will not operate in QIV

Thermal Resistance (Steady State)

R

θ JC [R θ JA

] (TYP.) °C/W

Package Code KJLRDVN

Typ e

TO-218

Isolated *

TO-218X Isolated *

TO-220

Isolated **

TO-220

Non-Isolated

TO-252

D-Pak

TO-251

V-Pa k

TO-263

D

2

Pak

6 A 3.3 [50] 1.80 [45] 2.1 2.3 [64] 1.80

8 A 2.8 1.50 1.8 2.1 1.50 10 A 2.6 1.30 1.30 12 A 2.3 1.20 1.20 16 A 2.1 1.10 1.10 25 A 1.35 1.32 2.0 0.87 0.87 30 A 2.3 35 A 0.85 40 A 0.97 0.95

Data Sheets Alternistor Triacs

Figure E4.1 Maximum Allowable Case Temperature versus

On-state Current (6 A to 12 A)

Figure E4.2 Maximum Allowable Case Temperature versus

On-state Current (8 A to 12 A)

Figure E4.3 Maximum Allowable Case Temperature versus

On-state Current (16 A)

Figure E4.4 Maximum Allowable Case Temperature versus

On-state Current (25 A to 40 A)

Figure E4.5 On-state Current versus On-state Voltage (Typical)

(6 A to 12 A)

Figure E4.6 On-state Current versus On-state Voltage (Typical)

(16 A to 40 A)

02468101214

0

60

70

80

90

100

110

120

130

RMS On-State Current [l

T(RMS)

] - AMPS

Maximum Allowable Case Temperature (T

C

) -

˚

C

12A TO-220 (ISOLATED)

10A TO-220 (NON-ISOLATED) AND D

2

PAK

6A TO-220 (ISOLATED)

6A TO-220

(NON-ISOLATED)

AND D

2

PAK

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

CASE TEMPERATURE: Measured as shown on Dimensional Drawing

02468101214

0

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – Amps

Maximum Allowable Case

Temperature (T

C

) – ˚C

12 A TO-220 (Non-isolated) and TO-263

10 A TO-220 (Isolated)

8 A TO-220 (Non-isolated), TO-263, TO-251, and TO-252

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

8 A TO-220 (Isolated)

0

60

70

80

90

100

110

120

130

0 5 10 15

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) –

˚

C

16A TO-220 (Non-isolated) and TO-263

16A TO

-220 (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

0 1020304050

50

60

70

80

90

100

110

120

130

RMS On-state Current [l

T(RMS)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

35 A TO-220 (Non-isolated) and TO-263

25 A and 30 A TO-220 (Isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing

40 A TO-

218

(Isolated)

25

25 A TO-220 (Non-isolated)

TO-218 (Isolated)

TO-263

0

2

6

8

10

12

14

16

18

20

0 0.6

0.8

1.0 1.2 1.4

1.6

Positive or Negative Instantaneous

On-state Voltage (v

T

) – Volts

Positive or Negative Instantaneous

On-state Current (i

T

) – Amps

T

C

= 25 ˚C

4

6 A to 12 A Devices

90

80

70

60

50

40

30

20

10

0

0.6

0.8

1.0

1.2

1.4

1.6

Positive or Negative Instantaneous

On-state Current (i

T

) – Amps

TC = 25˚C

1.8

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

40 A Devices

16 A Devices

25 A to 35 A Devices

Alternistor Triacs Data Sheets

Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants

versus Case Temperature

Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants

versus Case Temperature

Figure E4.9 Normalized DC Holding Current versus Case Temperature

Figure E4.10 Peak Surge Current versus Surge Current Duration

(6 A to 12 A)

Figure E4.11 Peak Surge Current versus Surge Current Duration

(16 A to 40 A)

Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)

0

.5

1.0

1.5

2.0

-65 -15 +65+25 +125-40

Case Temperature (TC) – ˚C

V

GT

(T

C

= 25 ˚C)

Ratio of

V

GT

0

1.0

2.0

3.0

4.0

-65 -15 +65+25 +125

-40

Case Temperature (TC) – ˚C

I

GT

(T

C

= 25 ˚C)

Ratio of

I

GT

0

1.0

2.0

3.0

4.0

-65 -15 +65+25 +125-40

Case Temperature (TC) – ˚C

I

H

(T

C

= 25 ˚C)

Ratio of

I

H

INITIAL ON-STATE CURRENT = 400 mA dc 16 A to 40 A Devices = 100 mA dc 6 to 12A Devices

200

120

40

1

2

3

45

6

8

10

20

30

40

60

80

100

200

300

600

1000

80

60 50

100

8 6

5

10

30

20

4

1

3

2

Surge Current Duration – Full Cycles

Peak Surge (Non-Repetitive)

On-state Current (I

TSM

) – Amps

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I

T(RMS)

]: Maximum

Rated Value at Specified Case Temperature

Notes:

1) Gate control may be lost during and immediately following surge current interval

2) Overload may not be repeated until junction temperature has returned to steady state rated value.

10 A to 12 A Devices

8 A TO-251

and TO-252

8 A Devices

6 A Devices

6 A TO

-251

and TO-252

110

100 1000

10

20

30

40

50

60

80

100

250

300

400

1000

Surge Current Duration – Full Cycles

Peak Surge (Non-repetitive)

On-state Current (I

TSM

) – Amps

200

Notes:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I

T(RMS)

]: Maximum

Rated Value at Specified Case Temperature

40 A

De

vices

35 A

De

vices

30 A

De

vice

s

25 A

De

vice

s

16 A

De

vices

0

100

200

300

400 500

0

2

4

6

8

10

DC Gate Trigger Current (

I

GT

) – mA

IGT = 80 to 100 mA

Typical Turn-on

Time (t

gt

) – µs

IGT = 10 mA to 35 mA

IGT = 50 mA

Data Sheets Alternistor Triacs

Figure E4.13 Power Dissipation (Typical) versus On-state Current

(6 A to 12 A)

Figure E4.14 Power Dissipation (Typical) versus On-state Current

(16 A)

Figure E4.15 Power Dissipation (Typical) versus On-state Current

(25 A to 40 A)

Figure E4.16 Maximum Allowable Ambient Temperature versus

On-state Current

01234567891011121314151

6

0

2

4

6

8

10

12

14

16

18

RMS On-state Curren

t [l

T(RMS)

] – AmpsS

Average On-state Power

Dissipation [P

D(AV)

] – Watts

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

6A to 12A Devices

0246

8

10 12

14

16

0

2

4

6

8

10

12

14

16

18

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power

Dissipation [P

D (AV)

] – Watts

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or inductive CONDUCTION ANGLE: 360˚

16A Devices

012

20 28 36

4

16 24 32 40

8

0

5

10

15

20

25

30

35

40

45

RMS On-State Current [I

T(RMS)

]—Amps

Average On-State Power

Dissipation [P

D(AV)

]—Watts

25 A

40 A

Current Waveform: Sinusoidal Load: Resistive or Inductive Conduction Angle: 360˚

30 A and

35 A Devices

120

100

80

60

40

25 20

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.

0

TO-220 Devices

RMS On-state Current [I

T (RMS)

] – Amps

Maximum Allowable Ambient Temperature (T

A

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360

˚

FREE AIR RATING – NO HEATSINK

TO-251 Devices

Notes

Selected Packages*

U.L. RECOGNIZED

File #E71639

Sensitive SCRs

(0.8 A to 10 A)

E5

General Description

The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccor's line of power SCRs. This group of packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to 500 µA. For gate currents in the 10 mA to 50 mA ranges, see “SCRs” section of this catalog.

The TO-220 and TO-92 are electrically isolated where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.

Teccor's line of SCRs features glass-passivated junctions to ensure long-term device reliability and parameter stability. Teccor's glass offers a rugged, reliable barrier against junction contamination.

Tape-and-reel packaging is available for the TO-92 package. Consult the factory for more information.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

Features

• Electrically-isolated TO-220 package

• High voltage capability — up to 600 V

• High surge capability — up to 100 A

• Glass-passivated chip

Compak Features

• Surface mount package — 0.8 A series

• New small-profile three-leaded Compak package

• Four gate sensitivities available

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

E5

TO-202

TO-92

3-lead

Compak

*TO-220

Isolated

TO-252

D-Pak

TO-251

V-P ak

AK

G

Sensitive SCRs Data Sheets

See “General Notes” on page E5 - 4 and “Electrical Specifications Notes” on page E5 - 5

TYPE

Part Number

I

T

V

DRM

&

V

RRM

I

GT

I

DRM

&

I

RRM

V

TM

Non-isolated

TO-92 TO-202

TO-251

V-Pak Compak

TO-252

D-Pak

(1)

Amps

Volts

(2) (12)

(14) (18)

µAmps

(20) (21)

µAmps

(3) (10)

Volts

See “Package Dimensions” section for variations. (11)

I

T(RMS)IT(AV)

TC or TL =

25 °C

TC or TL =

100 °C

TC or TL =

110 °C

MAX MIN MAX MAX MAX

0.8 A

S2S1 0.8 0.51 200 12 2 100 1.7 S4S1 0.8 0.51 400 12 2 100 1.7 S6S1 0.8 0.51 600 12 2 100 1.7 S2S2 0.8 0.51 200 50 2 100 1.7 S4S2 0.8 0.51 400 50 2 100 1.7 S6S2 0.8 0.51 600 50 2 100 1.7

S2S 0.8 0.51 200 200 2 100 1.7 S4S 0.8 0.51 400 200 2 100 1.7

S6S 0.8 0.51 600 200 2 100 1.7 S2S3 0.8 0.51 200 500 2 100 1.7 S4S3 0.8 0.51 400 500 2 100 1.7 S6S3 0.8 0.51 600 500 2 100 1.7

EC103B 0.8 0.51 200 200 1 50 1.7 EC103D 0.8 0.51 400 200 1 50 1.7

EC103M 0.8 0.51 600 200 2 100 1.7 EC103B1 0.8 0.51 200 12 1 50 1.7 EC103D1 0.8 0.51 400 12 1 50 1.7 EC103M1 0.8 0.51 600 12 2 100 1.7 EC103B2 0.8 0.51 200 50 1 50 1.7 EC103D2 0.8 0.51 400 50 1 50 1.7 EC103M2 0.8 0.51 600 50 2 100 1.7 EC103B3 0.8 0.51 200 500 1 50 1.7 EC103D3 0.8 0.51 400 500 1 50 1.7 EC103M3 0.8 0.51 600 500 2 100 1.7

2N5064 0.8 0.51 200 200 1 50 1.7 2N6565 0.8 0.51 400 200 1 100 1.7

1.5 A

TCR22-4 1.5 0.95 200 200 1 100 1.5

TCR22-6 1.5 0.95 400 200 1 100 1.5

TCR22-8 1.5 0.95 600 200 2 100 1.5

4A

T106B1 4 2.5 200 200 2 100 2.2 T106D1 4 2.5 400 200 2 100 2.2 T106M1 4 2.5 600 200 2 100 2.2 T107B1 4 2.5 200 500 2 100 2.5 T107D1 4 2.5 400 500 2 100 2.5 T107M1 4 2.5 600 500 2 100 2.5

S2004VS1 S2004DS1 4 2.5 200 50 2 100 1.6 S4004VS1 S4004DS1 4 2.5 400 50 2 100 1.6 S6004VS1 S6004DS1 4 2.5 600 50 2 100 1.6 S2004VS2 S2004DS2 4 2.5 200 200 2 100 1.6 S4004VS2 S4004DS2 4 2.5 400 200 2 100 1.6 S6004VS2 S6004DS2 4 2.5 600 200 2 100 1.6

K

G

A

K

A

G

A

G

K

A

G

K

A

K

G

Data Sheets Sensitive SCRs

.

See “General Notes” on page E5 - 4 and “Electrical Specifications Notes” on page E5 - 5

V

GT

I

H

I

GMVGRMPGM

P

G(AV)

I

TSM

dv/dt di/dt

t

gt

t

q

l2t

(4) (12) (22)

Volt s

(5) (15)

(16) (19)

mAmps

(17)

Amps Volts

(17)

Watts Watts

(6) (7) (13)

Amps

Volts/µSec Amps/µSec

(8)

µSec

(9)

µSec Amps

2

/Sec

T

C

or TL =

-40 °C

TC or TL =

25 °C

TC or TL =

110 °C 60/50 Hz

MAX MAX MIN MIN TYP (23) TYP MAX

1.2 0.8 0.2 5 1 5 1 0.1 20/16 20 50 2 60 1.6

1.2 0.8 0.2 5 1 5 1 0.1 20/16 10 50 2 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 25 50 3 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 10 50 3 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 30 50 4 50 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 15 50 4 50 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 40 50 5 45 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 20 50 5 45 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 30 50 3.5 50 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 15 50 3.5 50 1.6

1.2 0.8 0.2 5 1 5 1 0.1 20/16 20 50 2 60 1.6

1.2 0.8 0.2 5 1 5 1 0.1 20/16 10 50 2 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 25 50 3 60 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 10 50 3 60 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 40 50 5 45 1.6

1.2 0.8 0.25 8 1 5 1 0.1 20/16 20 50 5 45 1.6

1.2 0.8 0.25 5 1 5 1 0.1 20/16 25 50 2.2 60 1.6

1.2 0.8 0.25 5 1 6 1 0.1 20/16 25 50 2.2 60 1.6 1 0.80.2551610.120/1660 50 3.550 1.6 1 0.80.2551610.120/1640 50 3.550 1.6 1 0.80.2551610.120/1630 50 3.550 1.6 1 0.8 0.2 5 1 6 1 0.1 20/16 8 50 4 50 1.6 1 0.8 0.2 5 1 6 1 0.1 20/16 8 50 4 50 1.6 1 0.8 0.2 5 1 6 1 0.1 20/16 8 50 4 50 1.6 1 0.8 0.2 6 1 6 1 0.1 20/16 8 50 5 45 1.6 1 0.8 0.2 6 1 6 1 0.1 20/16 8 50 5 45 1.6 1 0.8 0.2 6 1 6 1 0.1 20/16 8 50 5 45 1.6 1 0.8 0.2 4 1 6 1 0.1 30/25 8 50 3 50 3.7 1 0.8 0.2 4 1 6 1 0.1 30/25 8 50 3 50 3.7 1 0.8 0.2 4 1 6 1 0.1 30/25 8 50 3 50 3.7 1 0.8 0.2 6 1 6 1 0.1 30/25 8 50 4 50 3.7 1 0.8 0.2 6 1 6 1 0.1 30/25 8 50 4 50 3.7 1 0.8 0.2 6 1 6 1 0.1 30/25 8 50 4 50 3.7

Sensitive SCRs Data Sheets

Specific Test Conditions

di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA pulse

width ≥15 µsec with ≤0.1 µs rise time

dv/dt — Critical rate-of-rise of forward off-state voltage I

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

DRM

and I

RRM

— Peak off-state current at V

DRM

and V

RRM

IGT — DC gate trigger current VD = 6 V dc; RL = 100 Ω I

GM

— Peak gate current

I

H

— DC holding current; initial on-state current = 20 mA

I

T

— Maximum on-state current

I

TSM

— Peak one-cycle forward surge current

P

G(AV)

— Average gate power dissipation

P

GM

— Peak gate power dissipation

t

gt

— Gate controlled turn-on time gate pulse = 10 mA; minimum

width = 15 µS with rise time ≤0.1 µs

t

q

— Circuit commutated turn-off time

V

DRM

and V

RRM

— Repetitive peak off-state forward and reverse voltage

V

GRM

— Peak reverse gate voltage

V

GT

— DC gate trigger voltage; VD = 6 V dc; RL = 100 Ω

V

TM

— Peak on-state voltage

General Notes

• Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC registered data. See specifications table on pages E5 - 2 and E5 - 3.

• The case lead temperature (

T

C

or TL) is measured as shown on dimensional outline drawings in the “Package Dimensions” section of this catalog.

• All measurements (except I

GT

) are made with an external resistor

R

GK

= 1 kΩ unless otherwise noted.

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.

• Operating temperature (T

J

) is -65 °C to +110 °C for EC Series devices, -65 °C to +125 °C for 2N Series devices, -40 °C to +125 °C for “TCR” Series, and -40 °C to +110 °C for all others.

• Storage temperature range (T

S

) is -65 °C to +150 °C for TO-92

devices, -40 °C to +150 °C for TO-202 and Compak devices, and

-40 °C to +125 °C for all others.

• Lead solder temperature is a maximum of +230 °C for 10 seconds

maximum ≥1/16" (1.59 mm) from case.

TYPE

Part Number

I

T

V

DRM

&

V

RRM

I

GT

I

DRM

&

I

RRM

V

TM

Isolated Non-isolated

TO-220 TO-202

TO-251

V-Pa k

TO-252

D-Pak

(1)

Amps

Volts

(2) (12)

µAmps

(20) (21)

µAmps

(3) (10)

Volts

See “Package Dimensions” section for variations. (11)

I

T(RMS)IT(AV)

TC =

25 °C

TC =

110 °C

MAX MAX MIN MAX MAX MAX MAX

6A

S2006LS2 S2006FS21 S2006VS2 S2006DS2 6 3.8 200 200 5 250 1.6 S4006LS2 S4006FS21 S4006VS2 S4006DS2 6 3.8 400 200 5 250 1.6 S6006LS2 S6006FS21 S6006VS2 S6006DS2 6 3.8 600 200 5 250 1.6 S2006LS3 S2006FS31 S2006VS3 S2006DS3 6 3.8 200 500 5 250 1.6 S4006LS3 S4006FS31 S4006VS3 S4006DS3 6 3.8 400 500 5 250 1.6 S6006LS3 S6006FS31 S6006VS3 S6006DS3 6 3.8 600 500 5 250 1.6

8A

S2008LS2 S2008FS21 S2008VS2 S2008DS2 8 5.1 200 200 5 250 1.6 S4008LS2 S4008FS21 S4008VS2 S4008DS2 8 5.1 400 200 5 250 1.6 S6008LS2 S6008FS21 S6008VS2 S6008DS2 8 5.1 600 200 5 250 1.6 S2008LS3 S2008FS31 S2008VS3 S2008DS3 8 5.1 200 500 5 250 1.6 S4008LS3 S4008FS31 S4008VS3 S4008DS3 8 5.1 400 500 5 250 1.6 S6008LS3 S6008FS31 S6008VS3 S6008DS3 8 5.1 600 500 5 250 1.6

10 A

S2010LS2 S2010FS21 S2010VS2 S2010DS2 10 6.4 200 200 5 250 1.6 S4010LS2 S4010FS21 S4010VS2 S4010DS2 10 6.4 400 200 5 250 1.6 S6010LS2 S6010FS21 S6010VS2 S6010DS2 10 6.4 600 200 5 250 1.6 S2010LS3 S2010FS31 S2010VS3 S2010DS3 10 6.4 200 500 5 250 1.6 S4010LS3 S4010FS31 S4010VS3 S4010DS3 10 6.4 400 500 5 250 1.6 S6010LS3 S6010FS31 S6010VS3 S6010DS3 10 6.4 600 500 5 250 1.6

K

A

G

K

A

G

A

G

K

A

K

G

Data Sheets Sensitive SCRs

Electrical Specifications Notes

(1) See Figure E5.1 through Figure E5.9 for current ratings at

specified operating temperatures.

(2) See Figure E5.10 for I

GT

versus TC or TL.

(3) See Figure E5.11 for instantaneous on-state current (i

T

) versus on-

state voltage (v

T

) TYP.

(4) See Figure E5.12 for V

GT

versus TC or TL.

(5) See Figure E5.13 for I

H

versus TC or TL.

(6) For more than one full cycle, see Figure E5.14.

(7) 0.8 A to 4 A devices also have a pulse peak forward current on-

state rating (repetitive) of 75 A. This rating applies for operation at 60 Hz, 75 °C maximum tab (or anode) lead temperature, switching from 80 V peak, sinusoidal current pulse width of 10 µs minimum, 15 µs maximum. See Figure E5.20 and Figure E5.21.

(8) See Figure E5.15 for t

gt

versus IGT.

(9) Test conditions as follows:

– T

C

or T

L

≤80 °C, rectangular current waveform – Rate-of-rise of current ≤10 A/µs – Rate-of-reversal of current ≤5A/µs – I

TM

= 1 A (50 µs pulse), Repetition Rate = 60 pps

– V

RRM

= Rated

– V

R

= 15 V minimum, V

DRM

= Rated

– Rate-of-rise reapplied forward blocking voltage = 5 V/µs – Gate Bias = 0 V, 100 Ω (during turn-off time interval)

(10) Test condition is maximum rated RMS current except TO-92

devices are 1.2 A

PK

; T106/T107 devices are 4 APK.

(11) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(12) V

D

= 6 V dc, RL = 100 Ω (See Figure E5.19 for simple test circuit

for measuring gate trigger voltage and gate trigger current.)

(13) See Figure E5.1 through Figure E5.9 for maximum allowable case

temperature at maximum rated current.

(14) I

GT

= 500 µA maximum at TC = -40 °C for T106 devices

(15) I

H

= 10 mA maximum at TC = -65 °C for 2N5064 Series and

2N6565 Series devices

(16) I

H

= 6 mA maximum at TC = -40 °C for T106 devices

(17) Pulse Width ≤10 µs

(18) I

GT

= 350 µA maximum at TC = -65 °C for 2N5064 Series and

2N6565 Series devices

(19) Latching current can be higher than 20 mA for higher I

GT

types. Also, latching current can be much higher at -40 °C. See Figure E5.18.

(20) T

C

or TL = TJ for test conditions in off state

(21) I

DRM

and I

RRM

= 50 µA for 2N5064 and 100 µA for 2N6565 at

125 °C

(22) TO-92 devices specified at -65 °C instead of -40 °C

(23) T

C

= 110 °C

V

GT

I

H

I

GM

V

GRM

P

GM

P

G(AV)ITSM

dv/dt di/dt

t

gt

t

q

l2t

(4) (12) (22)

Volts

(5) (19)

mAmps

(17)

Amps Volts

(17)

Watts Watts

(6) (13)

Amps

Volt s/µSe c

Amps/µSec

(8)

µSec

(9)

µSec Amps

2

Sec

T

C

=

-40 °C

TC =

25 °C

TC =

110 °C T

C

= 110 °C

MAX MAX MIN 60/50 Hz TYP TYP MAX

1 0.8 0.25 6 1 6 1 0.1 100/83 10 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 8 1 6 1 0.1 100/83 10 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41

10.80.2561610.1100/8310 100 45041

10.80.2561610.1100/838 100 45041

10.80.2581610.1100/8310 100 54541

10.80.2581610.1100/838 100 54541

10.80.2581610.1100/838 100 54541 1 0.8 0.25 6 1 6 1 0.1 100/83 10 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 6 1 6 1 0.1 100/83 8 100 4 50 41 1 0.8 0.25 8 1 6 1 0.1 100/83 10 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41 1 0.8 0.25 8 1 6 1 0.1 100/83 8 100 5 45 41

Sensitive SCRs Data Sheets

*Mounted on 1 cm2 copper foil surface; two-ounce copper foil

Electrical Isolation

Teccor’s isolated sensitive SCRs will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows other standard and optional isolation ratings.

*UL Recognized File #E71639 **For 4000 V isolation, use “V” suffix in part number.

Figure E5.1 Maximum Allowable Case Temperature versus

RMS On-state Current

Figure E5.2 Maximum Allowable Case Temperature versus

RMS On-state Current

Figure E5.3 Maximum Allowable Case Temperature versus

Average On-state Current

Thermal Resistance (Steady State)

R

θJC

[R

θ JA

] °C/W (TYPICAL)

Package Code

ELF2FCDV

Typ e

TO-92 TO-220 TO-202

Type 2, 4, & 41

TO-202

Typ e 1 & 3

Compak TO-252

D-Pak

TO-251

V-Pa k

0.8 A 75 [160] 60*

1.5 A 50 [160]

4.0 A 10 [100] 6.2 [80] 3.0 3.8 [85]

6.0 A 4.0 [65] 4.3 1.8 2.4

8.0 A 3.4 3.9 1.5 2.1

10.0 A 3.0 3.4 1.45 1.72

Electrical Isolation *

from Leads to Mounting Tab

V AC RMS TO-220

2500

Standard

4000

Optional **

50

60

70

80

90

100

110

120

130

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 180

˚

CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

RMS On-State Current [

I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

Compak

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

EC Series

JEDEC 2N Series

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

40

50

60

70

80

90

100

110

120

130

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

RMS On-state Current [

I

T(RMS)

] – Amps

Maximum Allowable Case Temperature (

T

C

) – ˚C

2.6

4 A TO-251 and TO-252

T106 and T107 Type 1 and 3

T106 and T107 Type 2 and 4

TCR22 Devices

0 0.1 0.2 0.3 0.4 0.5 0.6

50

60

70

80

90

100

110

120

130

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

Average On-state Current [

I

T(AV)

] – Amps

Maximum Allowable Case Temperature (

T

C

) – ˚C

0.51

Compak

EC Series

JEDEC 2N Series

Data Sheets Sensitive SCRs

Figure E5.4 Maximum Allowable Case Temperature versus

Average On-state Current

Figure E5.5 Maximum Allowable Ambient Temperature versus

On-state Current

Figure E5.6 Maximum Allowable Ambient Temperature versus

RMS On-state Current

Figure E5.7 Maximum Allowable Ambient Temperature versus

Average On-state Current

Figure E5.8 Maximum Allowable Case Temperature versus

RMS On-state Current

Figure E5.9 Maximum Allowable Case Temperature versus

Average On-state Current

0 0.5 1.0 1.5 2.0 2.5 3.0

50

60

70

80

90

100

110

120

130

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

0.95

40

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

˚

CASE TEMPERATURE: Measured as Shown on Dimensional Drawing

1.65 1.9 2.54

T106 and T107 Type 1 and 3

T106 and T107

Type 2 and 4 TCR22 Devices

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

140

120

100

80

60

40

20

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

˚

FREE AIR RATING

1.5 A and JEDEC 2N Series I

T(AV)

and EC Series I

T(AV)

On-state Current – Amps

Maximum Allowable Ambient Temperature (T

A

) – ˚C

1.5 A Devices and JEDEC 2N Series I

T(RMS)

EC Series I

T(RMS)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

140

120

100

80

60

40

20

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Ambient Temperature (T

A

) – ˚C

2.0

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

˚

FREE AIR RATING

TO-220

T106/T107 TO-202 Type 1 and 3

T106/T107 TO-202 Type 2 and 4 and TO-251

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

20

40

60

80

100

120

140

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

˚

FREE AIR RATING

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable

Ambient Temperature (T

A

) – ˚C

TO-220

T106/T107 TO-202 Type 1 and 3

T106/T107 TO-202 Type 2 and 4 and TO-251

80

2468100

85

90

95

100

105

110

115

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

˚

TEMPERATURE: Measured as Shown on Dimensional Drawings

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

6 A TO-220 and TO-202

8 A TO-220 and TO-202

10 A TO-220 and TO-202

6 A TO-251 and TO-252

8 A TO-251 and TO-252

10 A TO-251 and TO-252

80

134560

85

90

95

100

105

110

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

72

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180

˚

CASE TEMPERATURE: Measured as Shown on Dimensional Drawings

6 A TO-220 and TO-202

8 A TO-220 and TO-202

10 A TO-220 and TO-202

6 A TO-251 and TO-252

8 A TO-251 and TO-252

10 A TO-251 and TO-252

Sensitive SCRs Data Sheets

Figure E5.10 Normalized DC Gate-Trigger Current versus

Case Temperature

Figure E5.11 Instantaneous On-state Current versus

On-state Voltage (Typical)

Figure E5.12 Normalized DC Gate-Trigger Voltage versus

Case Temperature

Figure E5.13 Normalized DC Holding Current versus Case Temperature

-65 -15 +25 +65 +110 +125-40

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

Case Temperature (TC) – ˚C

Ratio of

I

GT

I

GT

(T

C

= 25 ˚C)

See General Notes for specific device operating temperature range.

0 .6 .8 1.0 1.2 1.4 1.6

0

4

8

12

16

20

24

28

32

TC = 25˚C

6 A to 10 A Devices

0.8 A to 1.5 A TO-92, T106/T107, and Compak

Instantaneous On-state Voltage (vT) – Volts

Instantaneous On-state Current (i

T

) – Amps

4 A TO-251 and TO-252

-65 -15 +25 +65 +110 +125-40

0

0.5

1.0

1.5

2.0

Case Temperature (TC) – ˚C

Ratio of

V

GT

V

GT

(

T

C

= 25

˚

C)

See General Notes for specific operating temperature range

-65 -40 -15 +25 +65 +110 +125

0

1.0

2.0

3.0

4.0

See General Notes for specific operating temperature range.

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

Data Sheets Sensitive SCRs

Figure E5.14 Peak Surge On-state Current versus Surge Current Duration

Figure E5.15 Typical Turn-on Time versus Gate Trigger Current

Figure E5.16 Power Dissipation (Typical) versus RMS On-state Current

1 2 3 4 5 6 8 10 20 30 40 50 60 80100 200 300 400 600 100

0

1

2

3

4

5

6

8

10

20

30

40

50

60

80

100

200

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [I

T(RMS)

]: Max

Rated Value at Specified Case Temperature

Surge Current Duration – Full Cycles

Peak Surge (Non-repetitive)

On-state Current (I

TSM

) – Amps

Notes:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

6 A Devices

8 A Devices

10 A Devices

4 A TO-251 and TO-252

1.5 A Devices

TO-106 and TO-107

0.8 A TO-92 and Compak

0.01 0.1 1 10 100

0.1

1.0

10

100

IGT = 50 µA MAX

IGT = 200 µA MAX

IGT = 500 µA MAX

TC = 25 ˚C

IGT = 12 µA MAX

DC Gate Trigger Current (IGT) – mA

Turn-on Time (t

gt

) – µs

01234

1.0

2.0

3.0

4.0

5.0

T106 and T107

0.8 A TO-92 and Compak

1.5 A Devices

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation [P

D(AV)

] – Watts

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

4 A TO-251 and TO-252

Sensitive SCRs Data Sheets

Figure E5.17 Power Dissipation (Typical) versus RMS On-state Current

Figure E5.18 Normalized DC Latching Current versus Case Temperature

Figure E5.19 Simple Test Circuit for Gate Trigger Voltage and

Current Measurement

Note: V1 — 0 V to 10 V dc meter

V

GT

— 0 V to 1 V dc meter IG — 0 mA to 1 mA dc milliammeter R1 — 1 k potentiometer

To measure gate trigger voltage and current, raise gate voltage (V

GT

) until meter reading V1 drops from 6 V to 1 V. Gate trigger

voltage is the reading on V

GT

just prior to V1 dropping. Gate trig-

ger current IGT can be computed from the relationship

where I

G

is reading (in amperes) on meter just prior to V1 drop-

ping.

Note: I

GT

may turn out to be a negative quantity (trigger current

flows out from gate lead).

024681

0

2

4

6

8

10

12

RMS On-state Current [I

T(RMS)

] – Amps

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

Average On-state

Power Dissipation [P

D(AV)

] – Watts

6 A to 10 A TO-220, TO-202, TO-251, and TO-252

-65 -15 +25 +65 +110 +125-40

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

Case Temperature (TC) – ˚C

Ratio of

I

L

I

L

(

T

C

= 25 ˚C)

See General Notes for specific device operating temperature range.

V1

6 V

DC

+

–

100

D.U.T.

Reset

Normally-closed

Pushbutton

1 k

(1%)

I

G

V

GT

100

I

GT

R1

IN4001

I

GTIG

V

GT

1000

-------------

Amps–=

Data Sheets Sensitive SCRs

Figure E5.20 Peak Repetitive Capacitor Discharge Current

Figure E5.21 Peak Repetitive Sinusoidal Curve

180

160

140

120

100

80

60

40

20

0

1.0 3.0

5.0

7.0

10 30

50

70

100

Peak Discharge Current (I

TM

) – Amps

Peak Current Duration (tW) – µs

0.8 A to 4 A

I

TM

t

W

tW = 5 TIME CONSTANTS

60 Hz

12 Hz

1 Hz

180

160

140

120

100

80

60

40

20

0

1.0 3.0

5.0

7.0

10 30

50

70

100

Peak Discharge Current (I

TM

) – Amps

Peak Current Duration (tW) – µs

0.8 A to 4 A

I

TM

t

W

60 Hz

12 Hz

1 Hz

Notes

Selected Packages*

U.L. RECOGNIZED

File #E71639

AK

G

SCRs

(1 A to 70 A)

E6

General Description

The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are required, see “Sensitive SCRs” section of this catalog.

Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.

The Teccor line of SCRs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

Features

• Electrically-isolated package

• High voltage capability — 200 V to 1000 V

• High surge capability — up to 950 A

• Glass-passivated chip

Compak SCR

• Surface mount package — 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

E6

TO-92

*TO-218

TO-202

*TO-218X

3-lead

Compak

TO-252

D-Pak

TO-251

V-Pak

*TO-220

TO-263

D

2

Pak

SCRs Data Sheets

Specific Test Conditions

di/dt — Maximum rate-of-rise of on-state current; IGT = 150 mA with

≤ 0.1 µs rise time

dv/dt — Critical rate of applied forward voltage

I

2

t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

I

DRM

and I

RRM

— Peak off-state forward and reverse current at V

DRM

and

V

RRM

Igt — dc gate trigger current; VD = 12 V dc; RL = 60 Ω for 1 to 16 A

devices and 30 Ω for 20 to 70 A devices

I

GM

— Peak gate current

I

H

— dc holding current; gate open

I

T

— Maximum on-state current

I

TSM

— Peak one-cycle forward surge current

P

G(AV)

— Average gate power dissipation

P

GM

— Peak gate power dissipation

t

gt

— Gate controlled turn-on time; gate pulse = 100 mA; minimum

width = 15 µs with rise time ≤ 0.1 µs

t

q

— Circuit commutated turn-off time

V

DRM

and V

RRM

— Repetitive peak off-state forward and reverse voltage

V

gt

— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω for 1 to 16 A

devices and 30 Ω for 20 to 70 A devices

V

TM

— Peak on-state voltage at maximum rated RMS current

General Notes

• All measurements are made at 60 Hz with a resistive load at an

ambient temperature of +25 °C unless otherwise specified.

• Operating temperature range (T

J

) is -65 °C to +125 °C for TO-92

devices and -40 °C to +125 °C for all other packages.

• Storage temperature range (T

S

) is -65 °C to +150 °C for TO-92

devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and

-40 °C to +125 °C for all others.

• Lead solder temperature is a maximum of 230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (T

C

) is measured as shown on dimensional outline drawings in the “Package Dimensions” sectionof this catalog.

TYPE

Part Number

I

T

V

DRM

& V

RRM

I

GT

Isolated Non-isolated

TO-92

TO-220 TO-202

TO-220

TO-251

V-Pa k Co mpak

TO-252

D-Pak

(1) (2) (15)

Amps

Volts

(4)

mAmps

See “Package Dimensions” section for variations. (11)

I

T(RMS)IT(AV)

MAX MAX MIN MIN MAX

1A

S201E S2N1 1 0.64 200 1 10

S401E S4N1 1 0.64 400 1 10

S601E S6N1 1 0.64 600 1 10

6A

S2006L S2006F1 S2006V S2006D 6 3.8 200 1 15

S4006L S4006F1 S4006V S4006D 6 3.8 400 1 15

S6006L S6006F1 S6006V S6006D 6 3.8 600 1 15

S8006L S8006V S8006D 6 3.8 800 1 15

SK006L SK006V SK006D 6 3.8 1000 1 15

8A

S2008L S2008F1 S2008R S2008V S2008D 8 5.1 200 1 15

S4008L S4008F1 S4008R S4008V S4008D 8 5.1 400 1 15

S6008L S6008F1 S6008R S6008V S6008D 8 5.1 600 1 15

S8008L S8008R S8008V S8008D 8 5.1 800 1 15

SK008L SK008R SK008V SK008D 8 5.1 1000 1 15

10 A

S2010L S2010F1 S2010R S2010V S2010D 10 6.4 200 1 15

S4010L S4010F1 S4010R S4010V S4010D 10 6.4 400 1 15

S6010L S6010F1 S6010R S6010V S6010D 10 6.4 600 1 15

S8010L S8010R S8010V S8010D 10 6.4 800 1 15

SK010L SK010R SK010V SK010D 10 6.4 1000 1 15

12 A

S2012R S2012V S2012D 12 7.6 200 1 20

S4012R S4012V S4012D 12 7.6 400 1 20

S6012R S6012V S6012D 12 7.6 600 1 20

S8012R S8012V S8012D 12 7.6 800 1 20

SK012R SK012V SK012D 12 7.6 1000 1 20

K

G

A

K

A

G

K

A

G

A

K

A

G

A

G

K

A

G

K

A

K

G

Data Sheets SCRs

Electrical Specification Notes

(1) See Figure E6.5 through Figure E6.16 for current rating at

specified operating case temperature.

(2) See Figure E6.1 and Figure E6.2 for free air current rating.

(3) See Figure E6.19 and Figure E6.20 for instantaneous on-state

current versus on-state voltage (typical).

(4) See Figure E6.18 for I

GT

versus TC.

(5) See Figure E6.17 for I

H

versus TC.

(6) For more than one full cycle rating, see Figure E6.23.

(7) See Figure E6.22 for t

gt

versus IGT.

(8) See Figure E6.21 for V

GT

versus TC.

(9) Test conditions are as follows:

•I

T

= 1 A for 1 A devices and 2 A for all other devices

• Pulse duration = 50 µs, dv/dt = 20 V/µs, di/dt = -10 A/µs for 1 A devices, and -30 A/µs for other devices

•I

GT

= 200 mA at turn-on

(10) See Figure E6.5 through Figure E6.10 for maximum allowable

case temperatures at maximum rated current.

(11) See package outlines for lead form configuration. When ordering

special lead forming, add type number as suffix to part number.

(12) Pulse width ≤10 µs

(13) Initial on-state current = 200 mA dc for 1 A through 16 A devices;

400 mA dc for 20 A through 70 A devices.

(14) T

C

= TJ for test conditions in off state.

(15) The R, K, or M package rating is intended for high surge condition

use only and not recommended for ≥50 A rms continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. Teccor's J package or W package is recommended for ≥50 A rms continuous current requirements.

(16) For various durations of an exponentially decaying current

waveform, see Figure E6.3 and Figure E6.4. (t

W

is defined as

5 time constants.)

(17) Minimum non-trigger V

GT

at 125 °C is 0.2 V.

I

DRM

& I

RRM

V

TM

V

GT

I

H

I

GMPGMPG(AV)ITSM

dv/dt I2t di/dt

t

gt

t

q

(14)

mAmps

(3)

Vol ts

(8)

(17)

Volt s

(5) (13)

mAmps

(12)

Amps

(12)

Watts Watts

(6) (10)

Amps Volts/µSec

Amps

2

Sec Amps/µSec

(7)

µSec

(9) (10)

µSec

T

C

=

25 °C

TC =

100 °C

TC =

125 °C

TC =

25 °C

TC =

25 °C

60/50 Hz

T

C

=

100 °C

TC =

125 °C

MAX MAX MAX MAX MIN MIN TYP MAX

0.01 0.2 0.5 1.6 1.5 30 1.5 15 0.3 30/25 40 20 3.7 50 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 350 250 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 300 225 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 250 200 41 100 2 35

0.02 3 1.6 1.5 30 2 20 0.5 100/83 100 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 350 250 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 300 225 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 250 200 41 100 2 35

0.02 3 1.6 1.5 30 2 20 0.5 100/83 100 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 350 250 41 100 2 35

0.01 0.2 0.5 1.6 1.5 30 2 20 0.5 100/83 300 225 41 100 2 35

0.02 0.5 1 1.6 1.5 30 2 20 0.5 100/83 250 200 41 100 2 35

0.02 3 1.6 1.5 30 2 20 0.5 100/83 100 41 100 2 35

0.01 0.5 1 1.6 1.5 40 2 20 0.5 120/100 350 250 60 100 2 35

0.01 0.5 1 1.6 1.5 40 2 20 0.5 120/100 300 225 60 100 2 35

0.02 0.5 1 1.6 1.5 40 2 20 0.5 120/100 250 200 60 100 2 35

0.02 3 1.6 1.5 40 2 20 0.5 120/100 100 60 100 2 35

SCRs Data Sheets

See “General Notes” on page E6 - 2 and “Electrical Specification Notes” on page E6 - 3.

TYPE

Part Number

I

T

V

DRM

&

V

RRM

I

GT

I

DRM

& I

RRM

Isolated Non-isolated

TO-220 TO-218X TO-218 TO-220 TO-218X TO-218

TO-263

D

2

Pak

(1) (15)

Amps

Volts

(4)

mAmps

(14)

mAmps

I

T(RMS)IT(AV)

TC =

25 °C

TC =

100 °C

TC =

125 °C

See “Package Dimensions” section for variations. (11) MAX MIN MIN MAX MAX

15 A

S2015L 15 9.5 200 1 30 0.01 0.5 1

S4015L 15 9.5 400 1 30 0.01 0.5 1

S6015L 15 9.5 600 1 30 0.01 0.5 1

S8015L 15 9.5 800 1 30 0.02 1 2

SK015L 15 9.5 1000 1 30 0.02 3

16 A

S2016R S2016N 16 10 200 1 30 0.01 0.5 1

S4016R S4016N 16 10 400 1 30 0.01 0.5 1

S6016R S6016N 16 10 600 1 30 0.01 0.5 1

S8016R S8016N 16 10 800 1 30 0.02 1 2

SK016R SK016N 16 10 1000 1 30 0.02 3

20 A

S2020L 20 12.8 200 1 30 0.01 0.5 1

S4020L 20 12.8 400 1 30 0.01 0.5 1

S6020L 20 12.8 600 1 30 0.01 0.5 1

S8020L 20 12.8 800 1 30 0.02 1.0 2

SK020L 20 12.8 1000 1 30 0.02 3

25 A

S2025L S2025R S2025N 25 16 200 1 35 0.01 1 2

S4025L S4025R S4025N 25 16 400 1 35 0.01 1 2

S6025L S6025R S6025N 25 16 600 1 35 0.01 1 2

S8025L S8025R S8025N 25 16 800 1 35 0.02 1.5 3

SK025L SK025R SK025N 25 16 1000 1 35 0.02 3

35 A

S2035J S2035K 35 22 200 5 40 0.01 1 2

S4035J S4035K 35 22 400 5 40 0.01 1 2

S6035J S6035K 35 22 600 5 40 0.01 1 2

S8035J S8035K 35 22 800 5 40 0.02 1.5 3

SK035K 35 22 1000 5 40 0.02 3

40 A

S2040R S2040N 40 25 200 5 40 0.01 1 2

S4040R S4040N 40 25 400 5 40 0.01 1 2

S6040R S6040N 40 25 600 5 40 0.01 1 2

S8040R S8040N 40 25 800 5 40 0.02 1.5 3

SK040R SK040N 40 25 1000 5 40 0.03 5

55 A

S2055R S2055W S2055M S2055N 55 35 200 5 40 0.01 1 2

S4055R S4055W S4055M S4055N 55 35 400 5 40 0.01 1 2

S6055R S6055W S6055M S6055N 55 35 600 5 40 0.01 1 2

S8055R S8055W S8055M S8055N 55 35 800 5 40 0.02 1.5 3

SK055R SK055M SK055N 55 35 1000 5 40 0.03 5

65 A

S2065J S2065K 65 41 200 5 50 0.02 1.5 3

S4065J S4065K 65 41 400 5 50 0.02 1.5 3

S6065J S6065K 65 41 600 5 50 0.02 1.5 3

S8065J S8065K 65 41 800 5 50 0.02 2 5

SK065K 65 41 1000 5 50 0.03 5

70 A

S2070W 70 45 200 5 50 0.02 1.5 3

S4070W 70 45 400 5 50 0.02 1.5 3

S6070W 70 45 600 5 50 0.02 1.5 3

S8070W 70 45 800 5 50 0.02 2 5

K

A

G

K

A

G

A

K

G

A

K

A

G

A

K

A

G

A

K

A

G

A

K

G

Data Sheets SCRs

See “General Notes” on page E6 - 2 and “Electrical Specification Notes” on page E6 - 3.

V

TM

V

GT

I

H

I

GM

P

GM

P

G(AV)

I

TSM

dv/dt I2t di/dt

t

gt

t

q

(3)

Volt s

(8) (17)

Volt s

(5) (13)

mAmps

(12)

Amps

(12)

Watts Watts

(6) (10) (16)

Amps Volts/µSec

Amps

2

Sec Amps/µSec

(7)

µSec

(9) (10)

µSec

T

C

= 25 °C TC = 25 °C 60/50 Hz

T

C

=

100 °C

TC =

125 °C

MAX MAX MAX MIN MIN TYP MAX

1.6 1.5 40 3 30 0.6 225/188 450 350 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 425 325 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 400 300 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 200 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 450 350 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 425 325 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 400 300 210 125 2 35

1.6 1.5 40 3 30 0.6 225/188 200 210 125 2 35

1.6 1.5 40 3 30 0.6 300/255 450 350 374 125 2 35

1.6 1.5 40 3 30 0.6 300/255 425 325 374 125 2 35

1.6 1.5 40 3 30 0.6 300/255 400 300 374 125 2 35

1.6 1.5 40 3 30 0.6 300/255 200 374 125 2 35

1.6 1.5 50 3.5 35 0.8 350/300 450 350 510 150 2 35

1.6 1.5 50 3.5 35 0.8 350/300 425 325 510 150 2 35

1.6 1.5 50 3.5 35 0.8 350/300 400 300 510 150 2 35

1.6 1.5 50 3.5 35 0.8 350/300 200 510 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 450 350 1035 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 425 325 1035 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 400 300 1035 150 2 35

1.8 1.5 50 3.5 35 0.8 500/425 200 1035 150 2 35

1.8 1.5 60 3.5 35 0.8 520/430 650 550 1122 175 2.5 35

1.8 1.5 60 3.5 35 0.8 520/430 600 500 1122 175 2.5 35

1.8 1.5 60 3.5 35 0.8 520/430 500 475 1122 175 2.5 35

1.8 1.5 60 3.5 35 0.8 520/430 250 1122 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 650 550 1750 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 600 500 1750 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 500 475 1750 175 2.5 35

1.8 1.5 60 4 40 0.8 650/550 250 1750 175 2.5 35

1.8 2 80 5 50 1 950/800 650 550 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 600 500 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 500 475 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 250 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 650 550 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 600 500 3745 200 2.5 35

1.8 2 80 5 50 1 950/800 500 475 3745 200 2.5 35

SCRs Data Sheets

* Mounted on 1cm2 copper foil surface; two-ounce copper foil

Electrical Isolation

Teccor’s isolated SCR packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab over the device's operating temperature range. The following table shows standard and optional isolation ratings.

* UL Recognized File #E71639 ** For 4000 V isolation, use “V” suffix in part number.

Thermal Resistance (Steady State)

R

θJC

[R

θJA

] °C/W (TYP.)

Pkg.

Code

LF F2 R J WK M D V N

Typ e

TO-220

Isolated

TO-202

Type 1

Non-isolated

TO-202

Type 2

Non-isolated

TO-220

Non-isolated

TO-218X

Isolated

TO-218X

Non-isolated

TO-218

Isolated

TO-218

Non-isolated

TO-252

D-Pak

Surface Mount

TO-251AA

V-Pa k

Non-isolated

TO-263

D

2

Pak

Non-isolated

1A

See below

6A

4.0 [50] 4.3 [45] 9.5 [70] 1.7 2.3 [70]

8A

3.4 3.9 1.8 [40] 1.5 2.0

10 A

3.0 3.4 1.6 1.45 1.7

12 A

1.5 1.4 1.6

15 A

2.5

16 A

1.3 1.3

20 A

2.4

25 A

2.35 1.0 1.0

35 A

0.70 0.70

40 A

0.6 0.6

55 A

0.5 0.53 0.53 0.5

65 A

0.86 0.86

70 A

0.60

Thermal Resistance (Steady State)

R

θJC

[R

θJA

] °C/W (TYP.)

Package Code CE

Typ e

Compak TO-92

1A 35 * 50 [145]

Electrical Isolation *

from Leads to Mounting Tab

VACRMS

TO-220

Isolated

TO-218X

Isolated

TO-218

Isolated

2500

Standard Standard Standard

4000

Optional ** N/A N/A

Data Sheets SCRs

Figure E6.1 Maximum Allowable Ambient Temperature versus

RMS On-state Current

Figure E6.2 Maximum Allowable Ambient Temperature versus

Average On-state Current

Figure E6.3 Peak Capacitor Discharge Current (6 A through 55 A)

Figure E6.4 Peak Capacitor Discharge Current Derating

(6 A through 55 A)

Figure E6.5 Maximum Allowable Case Temperature versus

RMS On-state Current (1 A)

Figure E6.6 Maximum Allowable Case Temperature versus

RMS On-state Current (6 A, 8 A, and 10 A)

20

40

60

80

100

120

0

0.2

0.4 0.6 0.8 1.0 1.2 1.4 1.6

1.8

2.0

2.2

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ FREE AIR RATING

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Ambient Temperature (T

A

) – ˚C

8 A TO-220 (Non-isolated)

6 A TO-220 (Isolated) and 6 A TO-202 (Types 1 and

3)

1 A TO-92

6 A TO-202 (Types 2 and 4) and 6 A TO-251

20

40

60

80

100

120

0

0.2

0.4 0.6 0.8 1.0 1.2 1.4

Maximum Allowable

Ambient Temperature (T

A

) – ˚C

Average On-state Current [I

T(AV)

] – Amps

8 A TO-220 (Non-isolated)

6 A TO-220 (Isolated) and 6 A TO-202 (Types 1 and 3)

1 A TO-92

6 A TO-202 (Types 2 and 4) and 6 A TO-251

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ FREE AIR RATING

0.5 1.0 2.0 5.0 10 20 50

20

50

100

200

300

1000

Pulse Current Duration (tw) – ms

Peak Discharge Current (I

TM

) – Amps

t

w

I

TM

tw = 5 times constants

6 A to 10 A Devices

12 A Devices

25 A Devices

55 A Devices

15 A and 16 A

Devices

25 50 75 100 125

0

0.2

0.4

0.6

0.8

1.0

Case Temperature (TC) – ˚C

Normalized Peak Current

50

60

70

80

90

100

110

120

130

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

0 0.4 0.8 1.20.6

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawing

1.00.2

1 A Devices

024681012

50

60

70

80

90

100

110

120

130

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180º CASE TEMPERATURE: Measure as shown on dimensional drawings

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

8 A TO-220 (Isolated)

and 8 A TO-202

6 A Devices

8 A TO-220 (Non-isolated) TO-251 and TO-252

10 A TO-220 (Isolated) and 10 A TO-202

SCRs Data Sheets

Figure E6.7 Maximum Allowable Case Temperature versus

RMS On-state Current (10 A, 12 A, 16 A, and 20 A)

Figure E6.8 Maximum Allowable Case Temperature versus

RMS On-state Current (25 A and 35 A)

Figure E6.9 Maximum Allowable Case Temperature versus

RMS On-state Current (40 A through 70 A)

Figure E6.10 Maximum Allowable Case Temperature versus

RMS On-state Current (55 A and 65 A)

Figure E6.11 Maximum Allowable Case Temperature versus

Average On-state Current (1 A)

Figure E6.12 Maximum Allowable Case Temperature versus

Average On-state Current (8 A, 10 A, and 12 A)

04 8121620

50

60

70

80

90

100

110

120

130

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawing

10 A TO-220

(Non-isolated)

15 A TO-220

(Isolated)

20 A TO-220 (Isolated)

16 A TO-220 (Non-isolated)

and TO-263

10 A TO-251 and 10 A TO-252

12 A TO-220 (Non-isolated)

TO-251 and TO-252

0 4 8 12162024283236

50

60

70

80

90

100

110

120

130

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive

CONDUCTION ANGLE: 180

˚

CASE TEMPERATURE: Measure as shown on dimensional drawings

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

35 A TO-218 (Isolated)

25 A TO-220

(Non-isolated)

and TO-263

25 A TO-220

(Isolated)

0 10203040506070

50

60

70

80

90

100

110

120

130

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

65 A TO-218X

(Isolated)

55 A TO-218X (Non-isolated)

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

40 A TO-220

(Non-isolated)

and TO-263

70 A TO-218X (Non-isolated)

010203040

50

60

70

80

90

100

110

120

130

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

50 60 70 75

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

* The R, K or M package rating is intended only for high surge condition use and is not recommended for >50 A rms continuous current use, since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for >50 A rms continuous current requirements.

65 A TO-218AC (Isolated) *

55 A TO-218AC (Non-isolated) *

55 A TO-220 (Non-isolated) and TO-263 *

0 0.2 0.4 0.6 0.8

50

60

70

80

90

100

110

120

130

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

1 A Devices

80

10 2345678

90

100

110

120

130

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

6 A TO-220 6 A TO-202

6 A TO-251 6 A TO-252

8 A TO

-220 (I

solated)

8 A TO

-202

10 A TO

-220 (Isolated)

and 10 A T

O

-202

8 A TO-220

(Non-isolated)

12 A TO

-2

20 (Non-isolated)

and TO-251 and TO

-

252

10 A TO-251 10 A TO-252

10 A TO-220 (Non-isolated)

Data Sheets SCRs

Figure E6.13 Maximum Allowable Case Temperature versus

Average On-state Current (10 A through 20 A)

Figure E6.14 Maximum Allowable Case Temperature versus

Average On-state Current (25 A and 35 A)

Figure E6.15 Maximum Allowable Case Temperature versus

Average On-state Current (40 A through 70 A)

Figure E6.16 Maximum Allowable Case Temperature versus

Average On-state Current (55 A and 65 A)

Figure E6.17 Normalized dc Holding Current versus Case Temperature

Figure E6.18 Normalized DC Gate-Trigger Current versus

Case Temperature

02468101214

50

60

70

80

90

100

110

120

130

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measured as shown on dimensional drawings

20 A TO-220

(Isolated)

15 A TO-220

(Isolated)

10 A TO-220

(Non-isolated)

16 A TO-220 (Non-isolated) and TO-263

0 .4 8 12 16 20 24

50

60

70

80

90

100

110

120

130

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

35 A TO-218 (Non-isolated)

35 A TO-218 (Isolated)

25A

TO

-

220 (Non-isolate

d)

and TO

-

263

25A TO-220 (Isolated)

0 1020304050

50

60

70

80

90

100

110

120

130

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

70 A TO-218X (Non-isolated)

40 A TO-220

(Non-isolated)

and TO-263

55 A TO-218X (Non-isolated)

65 A TO-218X (Isolated)

0 102030405

0

50

60

70

80

90

100

110

120

130

Average On-state Current [I

T(AV)

] – Amps

Maximum Allowable

Case Temperature (T

C

) – ˚C

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚ CASE TEMPERATURE: Measure as shown on dimensional drawings

55 A TO-218AC (Non-isolated)

*

The R, K, or M package rating is intended only for high surge condition use and is not recommended for >32 A (AV) continuous current use since narrow pin lead temperature can exceed PCB solder melting temperature. J or W packages are recommended for >32 A (AV) continuous current requirements.

55 A TO-220 (Non-isolated) and TO-263

*

65 A TO-218AC (Isolated) *

-40 -15 +25 +65 +105 +125

0

.5

1.0

1.5

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

INITIAL ON-STATE CURRENT = 200 mA dc for 1 A to 20 A Devices and 400 mA dc for 25 A to 70 A Devices

-40 -15 +25 +65 +105 +125

0

0.5

1.0

1.5

2.0

Case Temperature (TC) – ˚C

Ratio of

I

GT

I

GT

(T

C

= 25 ˚C)

SCRs Data Sheets

Figure E6.19 Instantaneous On-state Current versus On-state Voltage

(Typical) (6 A through 25 A)

Figure E6.20 Instantaneous On-state Current versus On-state Voltage

(Typical) (35 A through 70 A)

Figure E6.21 Normalized DC Gate-trigger Voltage versus

Case Temperature

Figure E6.22 Typical Turn-on Time versus Gate-trigger Current

0 0.6 0.8 1.0 1.2 1.4 1.6

0

10

20

30

40

50

60

70

80

90

Instantaneous On-state Voltage (vT) – Volts

Instantaneous On-state Current (

i

T

) – Amps

TC = 25˚C

12 A Devices

15 A to 20 A Devices

1 A Devices

6 A to 10 A Devices

25 A Devices

0 .6 .8 1.0 1.2 1.4 1.6

0

20

40

60

80

100

120

140

160

180

200

Instantaneous On-state Voltage (v

T

) – Volts

Instantaneous On-state

Current (

i

T

) – Amps

TC = 25˚C

65 A and 70 A Devices

55 A Devices

35 A to 40 A Devices

-40 -15 +25 +65 +105 +125

0

0.5

1.0

1.5

Case Temperature (TC) – ˚C

Ratio of

V

GT

V

GT

(T

C

= 25 ˚C)

10 20 30 40 50 60 80 100 200

1

2

3

4

5

6

7

0

Turn-on Time (t

gt

) – µs

DC Gate Trigger Current (IGT) – mA

6 A to 12 A Devices

1 A Devices

40 A to 70 A Devices

15 A to 35 A Devices

TC = 25˚C

Data Sheets SCRs

Figure E6.23 Peak Surge Current versus Surge Current Duration

Figure E6.24 Power Dissipation (Typical) versus RMS On-state Current

(1 A)

Figure E6.25 Power Dissipation (Typical) versus RMS On-state Current

(6 A through 20 A)

8

1

2

3

4

5

6

1000

10

20

30

40

50

60

80

100

200

300

400

500

600

800

1 23 54 6 7 8 10 20 30 40 60 80100 200 300400 600 1000

Surge Current Duration – Full Cycles

70 A Devices

65 A TO-218

55 A Devices

25 A Devices

35 A Devices

20 A Devices

16 A Devices

15 A Devices

12 A Devices

10 A Devices

1 A Devices

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: [I

T(RMS)

]: Max-

Rated Value at Specified Case Temperature

Notes:

1) Gate control may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

8 A Devices

6 A Devices

Peak Surge (Non-repetitive) On-state Current (I

TSM

) – Amps

40 A Devices

0 0.2 0.4 0.6 0.8

0

0.4

0.8

1.0

0.2

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power

Dissipation [P

D(AV)

] – Watts

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

1.0 A Devices

1.0

0.6

0481216

0

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state

Power Dissipation [P

D(AV)

] – Watts

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

2 6 10 14 18

2

4

6

8

10

12

14

16

18

20

15 A to 20 A Devices

12 A Devices

6 A to 10 A Devices

SCRs Data Sheets

Figure E6.26 Power Dissipation (Typical) versus RMS On-state Current

(25 A and 35 A)

Figure E6.27 Power Dissipation (Typical) versus RMS On-state Current

(40 A through 70 A)

0 8 16 24 32

0

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state

Power Dissipation [P

D(AV)

] x– Watts

412202836

4

8

12

16

20

24

28

32

25 A TO-220 Devices

35 A Devices

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state

Power Dissipation [P

D(AV)

] – Watts

0 10203040506070

0

10

20

30

40

50

60

65 A and 70 A Devices

CURRENT WAVEFORM: Half Sine Wave LOAD: Resistive or Inductive CONDUCTION ANGLE: 180˚

40 A and 55 A Devices

U.L. RECOGNIZED

File #E71639

TO-220

Isolated

AC

Rectifiers

(15 A to 25 A)

E7

General Description

Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby simplifying stock requirements.

Teccor's silicon rectifiers feature glass-passivated junctions to ensure long term reliability and stability. In addition, glass offers a rugged, reliable barrier against junction contamination.

Features

• Electrically-isolated packages

• High voltage capabilities — 200 V to 1000 V

• High surge capabilities — up to 350 A

• Glass-passivated junctions

E7

Rectifiers Data Sheets

Test Conditions

I2t — RMS surge (non-repetitive) forward current for 8.3 ms for fusing

I

F(AV)

— Average forward current

I

F(RMS)

— RMS forward current

I

FSM

— Peak one-cycle surge current

I

RM

— Peak reverse current

R

θ

JC

— Thermal resistance (steady state) junction to case

V

FM

— Peak forward voltage at rated average forward current

V

R

— DC blocking voltage

V

RRM

— Peak repetitive reverse voltage

General Notes

• Operating temperature range (TJ) is -40 °C to +125 °C.

• Storage temperature range (T

S

) is -40 °C to +125 °C.

• Lead solder temperature is a maximum of 230 °C for 10 seconds

maximum at a minimum of 1/16" (1.59 mm) from case.

• The case temperature (T

C

) is measured as shown on dimensional outline drawings in the “Package Dimensions” section of this catalog.

• Teccor's electrically-isolated TO-220 devices withstand a high potential test of 2500 V ac rms from leads to mounting tab over the operating temperature range.

• Typical Reverse Recovery Time (t

rr

) is 4 µs. (Test conditions =

0.9 A forward current and 1.5 A reverse current)

Electrical Specification Notes

(1) See Figure E7.3 for current rating at specified case temperature.

(2) For more than one full cycle rating, see Figure E7.4.

(3) T

C

= TJ for test conditions

(4) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

Electrical Isolation

* UL Recognized File #E71639 ** For 4000 V isolation, use “V” suffix in the part number.

Typ e

Part Number

V

RRM

VRI

F(AV)IF(RMS)IFSM

I

RM

V

FM

I2t

R

θJC

Isolated

TO-220

Vol ts Vol ts

(1)

Amps Amps

(2)

Amps

(3)

mA Volts

Amps

2

Sec °C/W

60/50 Hz

T

C

=

25 °C

TC =

100 °C

TC =

125 °CT

C

=25 °C

See “Package Dimensions”

section for variations. (4) MIN MIN MAX MAX MAX MAX TYP

15 A

D2015L 200 200 9.5 15 225/188 0.1 0.5 1 1.6 210 2.85

D4015L 400 400 9.5 15 225/188 0.1 0.5 1 1.6 210 2.85

D6015L 600 600 9.5 15 225/188 0.1 0.5 1 1.6 210 2.58

D8015L 800 800 9.5 15 225/188 0.1 0.5 1 1.6 210 2.85

DK015L 1000 1000 9.5 15 225/188 0.1 3 1.6 210 2.85

20 A

D2020L 200 200 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

D4020L 400 400 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

D6020L 600 600 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

D8020L 800 800 12.7 20 300/255 0.1 0.5 1 1.6 374 2.5

DK020L 1000 1000 12.7 20 300/255 0.1 3 1.6 374 2.5

25 A

D2025L 200 200 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

D4025L 400 400 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

D6025L 600 600 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

D8025L 800 800 15.9 25 350/300 0.1 0.5 1 1.6 508 2.7

DK025L 1000 1000 15.9 25 350/300 0.1 3 1.6 508 2.7

C

A

Not Used

Electrical Isolation

from Leads to Mounting Tab *

VACRMS

TO-220

Isolated

2500

Standard

4000

Optional **

Data Sheets Rectifiers

Figure E7.1 Instantaneous Forward Current versus Forward Voltage

(Typical)

Figure E7.2 Forward Power Dissipation (Typical)

Figure E7.3 Maximum Allowable Case Temperature versus

Average Forward Current

Figure E7.4 Peak Surge Forward Current versus Surge Current

Duration

0 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0

20

40

60

80

100

120

140

Instantaneous Forward Voltage (vF) – Volts

Instantaneous Forward Current (

i

F

) – Amps

15 A Devices

TC = 25˚C

20 A Devices

25 A Devices

16

120 2 4 6 8 101214

0

4

8

12

16

20

SINGLE PULSE RECTIFICATION 60 Hz SINE WAVE

20 A Devices

15 A Devices

25 A Devices

Average Forward Current [I

F(AV)

] – Amps

Average Forward

Power Dissipation [P

F(AV)

] – Watts

02468101214

0

70

75

80

85

90

95

100

105

110

115

120

125

20 A Devices

15 A Devices

Average Forward Current [I

F (AV)

] – Amps

Maximum Allowable Case Temperature (T

C

) – ˚C

SUPPLY FREQUENCY: 60 Hz Sine Wave LOAD: Resistive or Inductive CASE TEMPERATURE: Measured As Shown on Dimensional Drawing

16

25 A Devices

10

20

30

40

60

80

100

200

300

400

600

800

1000

1 2 4 6 10 20 40 60 100 200 400 600 1000

Surge Current Duration – Cycles

SUPPLY FREQUENCY: 60 Hz Sinewave LOAD: Resistive or Inductive RMS ON-STATE CURRENT: [I

F(RMS)

] Maximium Rated Value at Specified Case Temperature

15 A Devices

20 A Devices

25 A Devices

Peak Surge (Non-repetitive)

Forward Current (I

FSM

) – Amps

Notes

2002 Teccor Electronics E8 - 1 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Diac

HT and ST Series

E8

General Description

Teccor’s HT and ST Series of bilateral trigger diacs offer a range of voltage characteristics from 27 V to 45 V.

A diac semiconductor is a full-wave or bidirectional thyristor. It is triggered from a blocking- to conduction-state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the diac.

The Teccor line of diacs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.

The diac specifications listed in this data sheet are for standard products. Special parameter selections such as close tolerance voltage symmetry are available. Consult the factory for more information about custom design applications.

Features

• Bilateral triggering device

• Glass-passivated junctions

• Wide voltage range selections

ST Series

• Epoxy SMT package

• High-temperature, solder-bonded die attachment

HT Series

• DO-35 trigger package

• Pre-tinned leads

E8

DO-214

DO-35

Diac Data Sheets

http://www.teccor.com E8 - 2

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

General Notes

• Lead solder temperature is +230 °C for 10-second maximum;

≥1/16" (1.59 mm) from case.

• See “Package Dimensions” section of this catalog.

Electrical Specification Notes

(1) Breakover voltage symmetry as close as 1 V is available from the

factory on these products.

(2) See Figure E8.4 and Figure E8.5 for test circuit and waveforms.

(3) Typical switching time is 900 nano-seconds measured at I

PK

(Figure E8.4) across a 20 Ω resistor (Figure E8.5). Switching time is defined as rise time of I

PK

between the 10% to 90% points.

(4) See V-I Characteristics.

Bilateral Trigger DIAC Specifications

• Maximum Ratings, Absolute-Maximum Values

– Maximum Trigger Firing Capacitance: 0.1 µF – Device dissipation (at T

A

= -40 °C to +40 °C):

250 mW for DO-35 and 300 mW for DO-214

– Derate above +40 °C:

3.6 mW/°C for DO-35 and 3 mW/°C for DO-214

• Temperature Ranges

Storage: -40 °C to +125 °C Operating (Junction): -40 °C to +125 °C

V-I Characteristics

* Mounted on 1 cm

2

copper foil surface; two-ounce copper foil

Electrical Characteristics TC = 25°C

Part No.

V

BO

∆V

BO

V

BB

I

BO

I

TRM

DO-35 DO-214

Breakover Voltage

(Forward and

Reverse)

Volts

Breakover Voltage

Symmetry

∆V

BO

=

[ | +V

BO

| - | - VBO | ]

Volt s

Dynamic

Breakback

Vol tage

(3)

| ∆V± |

Vol ts

Peak Breakover

Current

at

Breakover

Vol tage

µAmps

Peak Pulse

Current for 10 µs 120 PPS

T

A

≤40 °C

Amps

MIN MAX MAX MIN MAX MAX

HT-32 ST-32 27 37 3 (1) 10 (2) 25 2

HT-32A / HT-5761 28 36 2 (1) 7 at 10 mA (4) 25 2

HT-32B / HT-5761A ST-32B 30 34 2 (1) 7 at 10 mA (4) 25 2

HT-34B ST-34B 32 36 2 (1) 10 (2) 25 2

HT-35 ST-35 30 40 3 (1) 10 (2) 25 2

HT-36A / HT-5762 ST-36A 32 40 2 (1) 7 at 10 mA (4) 25 2

HT-36B ST-36B 34 38 2 (1) 10 (2) 25 2

HT-40 ST-40 35 45 3 (1) 10 (2) 25 2

HT and ST Series Thermal Resistance

Junction to Lead - R

θ

JL

: °C/W

Junction to Ambient [R

θ

JA

]: °C/W

(based on maximum lead temperature of

90 °C for DO-214 and 85 °C for DO-35 devices)

Y Package

DO-35

S Package

DO-214

100 [278] °C/W 65 °C/W *

10 mA

Breakover

Current

I

BO

-V

BO

Voltage

Current

Breakover

Voltage

V

BO

+V

BO

V

Data Sheets Diac

2002 Teccor Electronics E8 - 3 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Figure E8.1 Typical Diac/Triac Full-wave Phase Control Circuit Using

Lower Voltage Diacs.

Figure E8.2 Repetitive Peak On-state Current versus Pulse Duration

120 V ac

60 Hz

LOAD — Up to 1500 W

3.3 k

200 k

0.1 µF

100 V

HT-35

Bilateral

Trigger

Diac

Triac

Q2015L5

MT2

MT1

G

1246 200 4006001000 2000 4000 10000

.001

.002

.003

.005

0.1

0.2

0.3

3.0

0.5

5.0

.01

0.02

0.03

0.05

1.0

10

2.0

Repetitive Peak On-state Current (I

TRM

) – Amps

Base Pulse Duration – µs

Safe Operating

Area

10 20 40 60 100

PULSE REPETITION RATE = 120 pps

T

A

= 40 ˚C

Diac Data Sheets

http://www.teccor.com E8 - 4

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

Figure E8.3 Normalized VBO Change versus Junction Temperature

Figure E8.4 Test Circuit Waveforms (Refer to Figure E8.5.)

Figure E8.5 Circuit Used to Measure Diac Characteristics

(Refer to Figure E8.4.)

Figure E8.6 Peak Output Current versus Triggering Capacitance

(Per Figure E8.5 with RL of 20 Ω)

-8

-6

-4

-2

0

+2

+4

+6

+8

-40 -20 0 +20 +40 +60 +80 +100 +120

+140

Junction Temperature (TJ) – ˚C

Percentage of V

BO

Change – %

ST Series

HT Series

∆V+

∆V-

V

C

0

-V

BO

I

L

+I

PK

0

t

-I

PK

t

+V

BO

Typical pulse base width is 10 µs

120 V rms

60 Hz

47 k

D.U.T.

R

L

20 Ω

1%

V

C

100 k

*

C

T

I

L

O.1 µF

* Adjust for one firing in each half cycle. D.U.T. = Diac

Triggering Capacitance (CT) – µF

Peak Output Current (I

PK

) – mA

.01 .02 .03 .04 .05 .06 .07 .08 .09

0

50

100

150

200

250

300

Typical (35 V Device)

.10

Sidac

(79 V to 330 V)

E9

General Description

The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device.

Teccor’s sidacs feature glass-passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

Applications

• High-voltage lamp ignitors

• Natural gas ignitors

• Gas oil ignitors

• High-voltage power supplies

• Xenon ignitors

• Overvoltage protector

• Pulse generators

• Fluorescent lighting ignitors

• HID lighting ignitors

Features

• AC circuit oriented

• Glass-passivated junctions

• High surge current capability

E9

TO-92

Type 70

DO-214

Surface Mount

TO-202

DO-15X

Sidac Data Sheets

Specific Test Conditions

di/dt — Critical rate-of-rise of on-state current

dv/dt — Critical rate-of-rise of off-state voltage at rated V

DRM

;

T

J

≤ 100 °C

I

BO

— Breakover current 50/60 Hz sine wave

I

DRM

— Repetitive peak off-state current 50/60 Hz sine wave; V = V

DRM

IH — Dynamic holding current 50/60 Hz sine wave; R = 100 Ω

I

T(RMS)

— On-state RMS current TJ ≤ 125 °C 50/60 Hz sine wave

I

TSM

— Peak one-cycle surge current 50/60 Hz sine wave (non-

repetitive)

R

S

— Switching resistance 50/60 Hz sine wave

V

BO

— Breakover voltage 50/60 Hz sine wave

V

DRM

— Repetitive peak off-state voltage

V

TM

— Peak on-state voltage; IT = 1 A

General Notes

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.

• Storage temperature range (T

S

) is -65 °C to +150 °C.

•The case (T

C

) or lead (TL) temperature is measured as shown on the dimensional outline drawings in the “Package Dimensions” section of this catalog.

• Junction temperature range (T

J

) is -40 °C to +125 °C.

• Lead solder temperature is a maximum of +230 °C for 10-second

maximum; ≥1/16" (1.59 mm) from case.

Electrical Specification Notes

(1) See Figure E9.5 for VBO change versus junction temperature.

(2) See Figure E9.6 for I

BO

versus junction temperature.

(3) See Figure E9.2 for I

H

versus case temperature.

(4) See Figure E9.13 for test circuit.

(5) See Figure E9.1 for more than one full cycle rating.

(6) T

C

≤ 90 °C for TO-92 Sidac

T

C

≤ 105 °C for TO-202 Sidacs

T

L

≤ 100 °C for DO-15X

T

L

≤ 90 °C for DO-214

(7) See Figure E9.14 for clarification of sidac operation.

(8) For best sidac operation, the load impedance should be near or

less than switching resistance.

(9) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

(10) Do not use electrically connected mounting tab or center lead.

V-I Characteristics

Typ e

Part No.

I

T(RMS)

V

DRM

V

BO

I

DRM

I

BO

I

H

TO-92 DO-15X

(10)

TO-202

DO-214

(7) (8)

Amps Volts

(1)

Volt s µA mps

(2)

µAmps

(3) (4)

mAmps

See “Package Dimensions” section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX

K0900E70 K0900G K0900S 1 ±70 79 97 5 10 60 150

K1050E70 K1050G K1050S 1 ±90 95 11 3 5 10 60 150

K1100E70 K1100G K1100S 1 ±90 104 11 8 5 10 60 150

K1200E70 K1200G K1200S 1 ±90 11 0 125 5 10 60 150

K1300E70 K1300G K1300S 1 ±90 120 138 5 10 60 150

K1400E70 K1400G K1400S 1 ±90 130 146 5 10 60 150

K1500E70 K1500G K1500S 1 ±90 140 170 5 10 60 150

K2000E70 K2000G K2000F1 K2000S 1 ±180 190 215 5 10 60 150

K2200E70 K2200G K2200F1 K2200S 1 ±180 205 230 5 10 60 150

K2400E70 K2400G K2400F1 K2400S 1 ±190 220 250 5 10 60 150

K2500E70 K2500G K2500F1 K2500S 1 ±200 240 280 5 10 60 150

K3000F1 1 ±200 270 330 5 10 60 150

R

S

V

BOVS

–()

ISI

BO

–()

--------------------------------=

-V

+I

V

DRM

+V

V

S

I

S

I

H

R

S

I

DRM

I

BO

V

BO

V

T

I

T

(IS - IBO)

(V

BO

- VS)

R

S

=

-I

Data Sheets Sidac

* Mounted on 1 cm2 copper foil surface; two-ounce copper foil **

R

θJA

for TO-202 Type 23 and Type 41 is 70 °C/Watt.

Figure E9.1 Peak Surge Current versus Surge Current Duration

Figure E9.2 Normalized DC Holding Current versus Case/Lead

Temperature

V

TM

I

TSM

R

S

dv/dt di/dt

Vol ts MAX

(5)

Amps

(8)

kΩ Volts/µSec Amps/µSec

Package 60 Hz 50 Hz

EGF S MIN MIN TYP

1.5 1.5 1.5 20 16.7 0.1 1500 150

1.5 1.5 3 1.5 20 16.7 0.1 1500 150

3 20 16.7 0.1 1500 150

Thermal Resistance (Steady State)

R

θJC

[R

θJA

] °C/W (TYPICAL)

E Package G Package F Package S Package

35 [95] 18 [75] 7 [45] ** 30 * [85]

1.0 10 100 1000

1.0

2.0

4.0

6.0

8.0

10

20

40

SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: I

T

RMS Maximum Rated

Value at Specified Junction Temperature

Notes:

1) Blocking capability may be lost during and immediately following surge current interval.

2) Overload may not be repeated until junction temperature has returned to steady-state rated value.

Surge Current Duration – Full Cycles

Peak Surge (Non-repetitive)

On-state Current [I

TSM

] – Amps

100

0

.5

1.0

2.0

1.5

-15-40 +25 +65 +105 +125

Case Temperature (TC) – ˚C

I

H

I

H

(T

C

= 25

˚

C)

Ratio of

Sidac Data Sheets

Figure E9.3 Repetitive Peak On-state Current (I

TRM

) versus

Pulse Width at Various Frequencies

Figure E9.4 Maximum Allowable Ambient Temperature versus

On-state Current

Figure E9.5 Normalized V

BO

Change versus Junction Temperature

Figure E9.6 Normalized Repetitive Peak Breakover Current versus

Junction Temperature

Figure E9.7 On-state Current versus On-state Voltage (Typical)

Figure E9.8 Power Dissipation (Typical) versus On-state Current

[Refer to Figure E9.14 for Basic Sidac Circuit]

di/dt Lim

it Line

0.6

0.8

4

2

4

6

8

10

20

40

60

80

100

200

400

600

2 x 10-3

68

1 x 10-2

2468

1 x 10-1

24681

1

Pulse base width (to) – ms

Repetitive Peak

On-state Current (I

TRM

) – Amps

VBO Firing Current Waveform

N

on-R

epeate

d

Repetition Frequency f=5 Hz

f = 10 Hz

f = 100 H

z

f = 1 kHz

f = 5 kHz

f = 10 kHz

f = 20 kHz

T

J

= 125 ºC Max

to

I

TRM

l/f

N

on-R

epeate

d

0 0.2 0.4 0.6 0.8 1.0

20

40

60

80

100

120

140

25

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable Ambient Temperature (T

A

) – ˚C

CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING

T

O

-9 2

a

n

d

D

O

-2 1

4

DO-15X and TO-202 Type 23 and

41

TO-202

Type 1

-12

-20 0 +20 +40 +60 +80 +100 +120

-10

-8

-6

-4

-2

0

+2

+4

-40

+25

Junction Temperature (TJ) – ˚C

Percentage of

V

BO

Change – %

+140

K2xxxF1

K1xxxE K1xxxG K1xxxS

K2xxxE K2xxxG K2xxxS

20 30 40 50 60 8070 90 100 110 120

1

2

3

4

5

6

7

8

9

Junction Temperature (TJ) – ˚C

Repetitive Peak Breakover

Current (I

BO

) Multiplier

V = V

BO

130

0

0.8 1.21.0 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.

6

0

1

2

3

4

5

6

7

8

9

Positive or Negative Instantaneous On-state Voltage (vT) – Volts

Positive or Negative Instantaneous

On-state Current (i

T

) – Amps

TL = 25 ˚C

TO-92, DO-214 and DO-15X "E", "S" and "G" Packages

TO-202 "F" Package

0.2

0.4

0.6 0.8

1.0

0

0.4

0.8

1.2

1.6

0.2

0.6

1.0

1.4

1.8

2.0

2.2

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state

Power Dissipation [P

D(AV)

] – Watts

"E", "S" and "G" Packages TO-92, DO-214 and DO-15X

TO-202 "F" Package

CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Basic Sidac Cirucit

Data Sheets Sidac

Figure E9.9 Comparison of Sidac versus SCR for Gas Ignitor Circuit

Figure E9.10 Circuit (Low Voltage Input) for Gas Ignition

Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit

Figure E9.12 Xenon Lamp Flashing Circuit

Figure E9.13 Dynamic Holding Current Test Circuit for Sidacs

Figure E9.14 Basic Sidac Circuit

100-250 V ac 60 Hz

SCR Sidac

4.7 µF

100 V

10 µF

50 V

24 V ac

60 Hz

4.7 µF 100 V

½ W

K1200E

Sidac

200 V

H.V.

Ignitor

1.2 µF

4.7 k

- +

+

-

Sidac

120 V ac

60 Hz

16 mH

3.3 k

0.47 µF

400 V

Ballast

Sidac

220 V ac

60 Hz

7.5 k

0.22 µF

Ballast

Lamp

120 V ac 220 V ac

Lamp

- +

+

-

Xenon Lamp

K2200G

10 µF

2 W

120 V ac

60 Hz

10 µF 450 V

4 kV

0.01 µF 400 V

20 M

Sidac

200-

400 V

100

250 V

Trigger

Transformer

20:1

100-250 V ac 60 Hz

Scope

Push to test

S1

Switch to test in each direction

100 Ω

1%

Device Under Test

S1

Scope Indication

Trace Stops

I

H

I

PK

Load

100-250 V ac

60 Hz

I

H

V

BO

120-145

˚

Conduction

Angle

I

H

I

H

Load Current

V

BO

V

BO

Sidac Data Sheets

Figure E9.15 Relaxation Oscillator Using a Sidac

Figure E9.16 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements

V

DC(IN) ≥ VB0

V

C

I

L

R

L

R

SIDAC

(a) Circuit

R

max

≤

V

IN - VBO

I

BO

R

min

≥

V

IN - VTM

I

H (MIN)

(b) Waveforms

V

BO

V

C

I

L

t

C

VCE Monitor

100 mH

I

C

Monitor

+

-

R

S

= 0.1 Ω

Test Circuit

V

BB1

=10 V

+

-

V

BB2

=0

R

BB2

=

100 Ω

R

BB1

=

150 Ω

2N6127

(or equivalent)

50 Ω

Input

(See Note B)

TIP-47

VCC = 20 V

Voltage and Current Waveforms

Input

Voltage

0 V

5 V

0.63 A

0

Sidac V

BO

10 V

V

CE(sat)

tw ≈ 3 ms

(See Note A)

Collector

Current

Collector

Voltage

100 ms

t

w

Note A: Input pulse width is increased until ICM = 0.63 A.

Note B: Sidac (or Diac or series of Diacs) chosen so that V

BO

is just below V

CEO

rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.

2002 Teccor Electronics M1 - 1 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

Package Dimensions

M1

This section contains the dimensions for the following packages:

• F Package — TO-202AB, Type 1 (Non-isolated)

• Y Package — DO-35 or DO-204AH

• R Package — TO-220AB (Non-isolated)

• L Package — TO-220AB (Isolated)

• P Package — TO-3 Fastpak (Isolated)

• E Package — TO-92 (Isolated)

• S Package — DO-214AA

• M Package — TO-218AC (Non-isolated)

• K Package — TO-218AC (Isolated)

• W Package — TO-218X (Non-isolated)

• J Package — TO-218X (Isolated)

• G Package — DO-15X Axial Lead

• C Package — Compak

• N Package — TO-263

• D Package — TO-252

• V Package — TO-251

M1

Package Dimensions Data Sheets

http://www.teccor.com M1 - 2

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

F Package — TO-202AB, Type 1

Non-isolated Mounting Tab Common with MT2 / Anode / PIN 2

Y Package — DO-35 or DO-204AH

(1) Package contour optional within dimensions A and C. Slugs, if any,

shall be included within this cylinder but shall not be subject to the minimum limit of Dimension A.

(2) Lead diameter is not controlled in this zone to allow for flash, lead

finish build-up, and minor irregularities other than slugs.

N P

Q

S

0.070 x 45

˚

Chamfer Common t

o

All Types

L

K

J

M

MT1 / Cathode / PIN 1

MT2 / Anode / PIN 2

Case

Temperature

Measurement

Point

Tab Common to

MT2 / Anode / PIN 2

A

B

C

D

G

F

H

E

Notes: (1) Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm) (2) Pin 2 and mounting tab are electrically connected. Do not use either for Sidac o

p

eration.

Gate / Trigger / PIN 3

R

DIA.

Dimension

Inches Millimeters

MIN MAX MIN MAX

A 0.365 0.385 9.27 9.78 B 0.243 0.253 6.17 6.43 C 0.110 0.120 2.79 3.05 D 0.780 0.810 19.81 20.57 E 0.290 0.310 7.37 7.87 F 0.400 0.430 10.16 10.92

G 0.052 0.062 1.32 1.58

H 0.055 0.065 1.40 1.65 J 0.023 0.029 0.58 0.74 K 0.095 0.105 2.41 2.67 L 0.195 0.205 4.95 5.21

M 0.049 0.059 1.24 1.50

N 0.017 0.023 0.43 0.58 P 0.055 0.065 1.40 1.65

Q 0.175 0.185 4.45 4.70

R 0.124 0.130 3.15 3.30 S 0.390 0.405 9.91 10.29

C

B

A

DIA.

1

2

D DIA. TYP

E

TYP

B

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.060 0.090 1.530 2.280 B 0.015 0.381 C 0.135 0.165 3.430 4.190 D 0.018 0.022 0.458 0.558 E 1.000 25.400

Data Sheets Package Dimensions

2002 Teccor Electronics M1 - 3 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

R Package — TO-220AB

Non-isolated Mounting Tab Common with Center Lead

L Package — TO-220AB

Isolated Mounting Tab

A O

P

N M

H

L

J

K

G

F

E

DIA.

B

C

D

Case Temperature Measurement Point

Gate/Trigger * MT2 / Anode MT1 / Cathode

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

* The gate pin is not used

on diode rectifiers.

R Package MT2 / Anode

R

Notch in gate lead identifies non-isolated tab

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.66 2.92 C 0.230 0.250 5.85 6.35 D 0.590 0.620 14.98 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.80 3.30 G 0.540 0.575 13.71 14.60 H 0.025 0.035 0.63 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91

M 0.070 0.085 1.78 2.16

N 0.018 0.024 0.45 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.53 R 0.038 0.048 0.97 1.22

A O

P

N M

H

L

J

K

G

F

E

DIA.

B

C

D

Case

Temperature

Measurement

Point

Gate/Trigger *

MT2 / Anode

MT1 / Cathode

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

* The gate pin is not used

on diode rectifiers.

R Package MT2 / Anode

R

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.66 2.92 C 0.230 0.250 5.85 6.35 D 0.590 0.620 14.98 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.80 3.30 G 0.540 0.575 13.71 14.60 H 0.025 0.035 0.63 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91

M 0.070 0.085 1.78 2.16

N 0.018 0.024 0.45 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.53 R 0.038 0.048 0.97 1.22

Package Dimensions Data Sheets

http://www.teccor.com M1 - 4

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

P Package — TO-3 Fastpak

Isolated Mounting Base

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

E Package — TO-92

All leads insulated from case. Case is electrically nonconductive.

MT2

Gate

MT1

Φ G

5-ΦN

Φ

J (MT1, MT2)

Φ

K (Gate)

F

H

E

C

B

A

D

Q

O

R

S

P

U

T

I

M

L

TC Measuring Point

Dimension

Inches Millimeters

MIN MAX MIN MAX A 1.531 1.543 38.90 39.20 B 1.177 1.185 29.90 30.10 C 0.843 0.850 21.40 21.60 D 0.780 0.795 19.80 20.20 E 0.783 0.791 19.90 20.10 F 0.874 0.906 22.20 23.00

G 0.161 0.169 4.10 4.30

H 0.386 0.465 9.80 11.80

I 0.508 0.587 12.90 14.90 J 0.079 0.087 2.00 2.20 K 0.047 0.055 1.20 1.40 L 0.307 0.319 7.80 8.10

M 0.372 0.396 9.45 10.05

N 0.043 0.059 1.10 1.50

O 0.315 0.331 8.00 8.40

P 0.098 0.106 2.50 2.70

Q 0.846 0.886 21.50 22.50

R 0.244 0.256 6.20 6.50 S 0.106 0.130 2.70 3.30

T (MT1) 0.321 0.329 8.15 8.35 T (MT2) 0.321 0.329 8.15 8.35

T (Gate) 0.220 0.228 5.60 5.80

U (MT1) 0.246 0.254 6.25 6.45 U (MT2) 0.246 0.254 6.25 6.45

U (Gate) 0.183 0.191 4.65 4.85

V 0.120 0.130 3.05 3.30

W 0.175 0.185 4.45 4.70

A

B

T

C

Measuring Point

Gate / PIN 2

Anode / MT2 / PIN

3

Cathode /

MT1 / PIN 1

E

H

G

F

D

K

J

L

M

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.176 0.196 4.47 4.98 B 0.500 12.70 D 0.095 0.105 2.41 2.67 E 0.150 3.81 F 0.046 0.054 1.16 1.37

G 0.135 0.145 3.43 3.68

H 0.088 0.096 2.23 2.44 J 0.176 0.186 4.47 4.73 K 0.088 0.096 2.23 2.44 L 0.013 0.019 0.33 0.48

M 0.013 0.017 0.33 0.43

Data Sheets Package Dimensions

2002 Teccor Electronics M1 - 5 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

S Package — DO-214AA

M Package — TO-218AC

Non-Isolated Mounting Tab Common with Center Lead

K Package — TO-218AC

Isolated Mounting Tab

0.079 (2.0)

0.110 (2.8)

0.079 (2.0)

Pad Outline

H

K

J

E

F

L

G

A

C

B D

TC / T

L

Temperature

Measurement Point

Dimensions are in inches (and millimeters).

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.140 0.155 3.56 3.94 B 0.205 0.220 5.21 5.59 C 0.077 0.083 1.96 2.11 D 0.166 0.180 4.22 4.57 E 0.036 0.056 0.91 1.42 F 0.073 0.083 1.85 2.11 G 0.004 0.008 0.10 0.20 H 0.077 0.086 1.96 2.18 J 0.043 0.053 1.09 1.35 K 0.008 0.012 0.20 0.30 L 0.027 0.049 0.69 1.24

C

D

H

G

F

B

A

E

T

C

Measurement Point

U DIA.

M Package MT2 / Anode

P

Gate / PIN 3

J

MT2 / Anode / PIN 2

MT1 / Cathode / PIN 1

M

N 3 Times

K

L

R

Q

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

W

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.810 0.835 20.57 21.21 B 0.610 0.630 15.49 16.00 C 0.178 0.188 4.52 4.78 D 0.055 0.070 1.40 1.78 E 0.487 0.497 12.37 12.62 F 0.635 0.655 16.13 16.64 G 0.022 0.029 0.56 0.74 H 0.075 0.095 1.91 2.41 J 0.575 0.625 14.61 15.88 K 0.211 0.219 5.36 5.56 L 0.422 0.437 10.72 11.10

M 0.058 0.068 1.47 1.73

N 0.045 0.055 1.14 1.40 P 0.095 0.115 2.41 2.92 Q 0.008 0.016 0.20 0.41 R 0.008 0.016 0.20 0.41 U 0.159 0.163 4.04 4.14

W 0.085 0.095 2.17 2.42

Package Dimensions Data Sheets

http://www.teccor.com M1 - 6

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

W Package — TO-218X

Non-isolated Mounting Tab Common with Center Lead

J Package — TO-218X

Isolated Mounting Tab

G Package — DO-15X

Axial Lead

G

R

Y

H

D

C

K

B

A

E

F

N

T

M

P

J

L

S

V

U DIA.

W

X

MT1 / Cathode

MT2 / Anode

W Package MT2 / Anode

T

c

Measurement

Point

Gate

Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

Z

DIM

INCHES MILLIMETERS

MIN MAX MIN MAX A 0.810 0.835 20.57 21.21 B 0.610 0.630 15.49 16.00 C 0.178 0.188 4.52 4.78 D 0.055 0.070 1.40 1.78 E 0.487 0.497 12.37 12.62 F 0.635 0.655 16.13 16.64

G 0.022 0.029 0.56 0.74

H 0.075 0.095 1.91 2.41 J 0.575 0.625 14.61 15.88 K 0.256 0.264 6.50 6.71 L 0.220 0.228 5.58 5.79

M 0.080 0.088 2.03 2.24

N 0.169 0.177 4.29 4.49 P 0.034 0.042 0.86 1.07 R 0.113 0.121 2.87 3.07 S 0.086 0.096 2.18 2.44 T 0.156 0.166 3.96 4.22 U 0.159 0.163 4.04 4.14 V 0.603 0.618 15.31 15.70

W 0.000 0.005 0.00 0.13

X 0.003 0.012 0.07 0.30 Y 0.028 0.032 0.71 0.81 Z 0.085 0.095 2.17 2.42

G

L

φD

φB2

TL Measuring Point

Dimension

Inches Millimeters

MIN MAX MIN MAX

φB2 0.027 0.035 0.686 0.889

φD 0.104 0.150 2.640 3.810

G 0.230 0.300 5.840 7.620

L 1.000 25.400

Data Sheets Package Dimensions

2002 Teccor Electronics M1 - 7 http://www.teccor.com

Thyristor Product Catalog +1 972-580-7777

C Package — Compak

N Package — TO-263

D2Pak Surface Mount

0.079 (2.0)

0.040 (1.0)

0.030

(0.76)

0.079 (2.0)

0.110 (2.8)

Pad Outline

H

K

JE

F

L

G

A

C

B

M

D

N

P

Gate

MT1 / Cathode

MT2 / Anode

TC / TL Temperature

Measurement Point

Dimensions are in inches (and millimeters).

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.140 0.155 3.56 3.94 B 0.205 0.220 5.21 5.59 C 0.077 0.083 1.96 2.11 D 0.166 0.180 4.22 4.57 E 0.036 0.056 0.91 1.42 F 0.073 0.083 1.85 2.11 G 0.004 0.008 0.10 0.20 H 0.077 0.086 1.96 2.18 J 0.043 0.053 1.09 1.35 K 0.008 0.012 0.20 0.30 L 0.027 0.049 0.69 1.24

M 0.022 0.028 1

0.56

0.71

N 0.027 0.033 0.69 0.84 P 0.052 0.058 1.32 1.47

B

A

V

G

S

D 2PL

C

E

K

H

J

F

0.46

(11.684)

0.17 (4.318)

0.26

(6.604)

0.115 (2.921)

0.15 (3.81)

0.08 (2.032)

Pad Outline

0.085 (2.159)

0.665

(16.891)

0.35

(8.89)

U

W

Case

Temperature

Measurement

Dimensions are in inches (and millimeters).

MT1 / Cathode

MT2 / Anode

Gate

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.360 0.370 9.14 9.40 B 0.380 0.420 9.65 10.67 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.63 0.89 E 0.048 0.055 1.22 1.40 F 0.060 0.075 1.52 1.91 G 0.095 0.105 2.41 2.67 H 0.083 0.093 2.11 2.36 J 0.018 0.024 0.46 0.61 K 0.090 0.110 2.29 2.79 S 0.590 0.625 14.99 15.87 V 0.035 0.045 0.89 1.14 U 0.002 0.010 0.05 0.25

W 0.040 0.070 1.02 1.78

Package Dimensions Data Sheets

http://www.teccor.com M1 - 8

2002 Teccor Electronics

+1 972-580-7777 Thyristor Product Catalog

D Package — TO-252AA

D-Pak Surface Mount

V Package — TO-251AA

V-Pak Through Hole

G

A

C

B

E

K

P

L

F

.460

0.071 (1.8)

0.118 (3.0)

0.181 (4.6)

Pad Outline

0.264 (6.7)

O

D

Case Temperature Measurement Point

M

H

0.264 (6.7)

Dimensions are in inches (and millimeters).

0.063 (1.6)

MT1 / Cathode

MT2 / Anode

Gate

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.236 0.244 6.00 6.20 B 0.379 0.409 9.63 10.39 C 0.176 0.184 4.47 4.67 D 0.035 0.050 0.89 0.27 E 0.087 0.093 2.21 2.36 F 0.027 0.033 0.69 0.84

G 0.205 0.213 5.21 5.41

H 0.251 0.261 6.38 6.63 J 0.040 0.050 1.02 1.27 K 0.086 0.094 2.18 2.39 L 0.026 0.036 0.66 0.91

M 0.018 0.023 0.46 0.58

N 0.170 0.180 4.32 4.57

O 0.002 0.010 0.05 0.25

P 0.018 0.023 0.46 0.58

D

B

C

J

L

K

A

Case Temperature Measurement Poin t

H

E

F

G

Gate

MT1 / Cathode

MT2 / Anode

Mounting Ta b Internally Connected to MT2

MT2 / Anode

Dimension

Inches Millimeters

MIN MAX MIN MAX A 0.040 0.050 1.02 1.27 B 0.236 0.244 6.00 6.20 C 0.350 0.375 8.89 9.53 D 0.205 0.213 5.21 5.41 E 0.251 0.261 6.38 6.63 F 0.027 0.033 0.69 0.84

G 0.087 0.093 2.21 2.36

H 0.086 0.094 2.18 2.39 J 0.018 0.023 0.46 0.58 K 0.036 0.042 0.91 1.07 L 0.018 0.023 0.46 0.58

Datasheet DK025L, DK020L, DK015L, D8025L, D8020L Datasheet (TECOR)

Specifications and Main Features

Frequently Asked Questions

User Manual