Datasheet D171C004CAN, D171C004BAF, D171C004BAA Datasheet (AGERE)

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Advance Data Sheet March 1999
D171-Type
The D171-Type PIN Photodetectors feature a rear-illuminated planar diode structure with a low-capacitance 4-mil active area for maximum responsivity and speed.
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Features

Low-profil e, 4-lead mini-DIL pa ckage
— Suitable for SONET applications High per formance
— High speed (<0.5 ns typical rise and fall time) — High responsivity (0.85 A/W typical) — Low dark current
Planar st ructure for high reliability
Wavelength : 1.1 µm—1.6 µm
50 µm core multimode fiber
Wide operating temperature range :
–40 °C to +85 °C Wide bandwidth
Qualification program : Bellcor e TA-NWT-983

Applications

Long-reach SONET OC-3/OC-12 systems and
SDH STM-1/STM-4 systems Secure digital data systems
Benefits
Compact si ze
Easily board mounted
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D171-Type
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Advance Data Sheet
PIN Photodetectors March 1999

Description

The D171-Type Photodetector consists of a PIN cou­pled to a multimode fiber pigail. The device is available in a 4-pin mini-DIL configuration (see Figure 3 and/or Table 1) and is ideal for long-reach (SONET) and other high-speed digital applications.
The D171-Type PIN Photodetector is a rear-illuminated planar diode structure with a low-capacitance active area for maximum responsivity and speed.
This device incorporates the new Laser 2000 manufac­turing process from the Optoelectronics Products unit of Lucent Technologies Microelectronics Group. Laser 2000 is a low-cost platform that targets high-volume manufacturing and tight product distributions on all optical subassemblies. This platform incorporates an advanced optical design that is produced on Opto’s highly automated production lines. The Laser 2000 platform is qualified for central office and uncontrolled environments, and can be used for applications requir­ing high perfomance and low cost.
PIN 2
10 V
N
P
LOAD
LN
RN
N
P
RP
Notes: This equivalent circuit is intended for modeling the package capacitance. Minimum capacitance is achieved by connecting the N­side to ground, applying a negative voltage to the P-side, and allowing the package to float (i.e., not connected to ground).
Typical values are as follows: CO = 0.3 pF to 0.5 pF. LN, LP = 3.0 nH. RN, RP = 5 Ω. CN = 0.4 pF. CP = 0.1 pF.
CN
CO
CP
LP
PIN 2
PIN 3
LOAD
LOAD
1-697
Figure 2. Equivalent ac Circuit for Digital
Applications
12
RBIAS
PIN 3

Figure 1. Typical Bias Connection

43
1-902.a

Figure 3. D171-Type PIN Photodetector Schematic

(T op View)

Table 1. Pin Descriptions

Pin Number Description
1NC 2 Photodiode Cathode 3 Photodiode Anode 4 Case Ground
22
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Advance Data Sheet March 1999 D171-Type
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PIN Photodetectors

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter Symbol Min Max Unit
Operating Temperature Range T Storage Temperature Range T Forward Voltage V Reverse Voltage* V
A
stg
F
R
–40 85 –40 90
°
C
°
C —0V —30V
Photocurrent 4 mA Humidity 95 %
* The recommended reverse bias voltage is 5 V to 15 V.

Handling Precautions

Electrostatic Discharge
CAUTION:This device is susceptible to damage as a result of electrostatic discharge. Take proper
precautions during both handling and testing. Follow guidelines such as JEDEC Publication No. 108-A (Dec. 1988).
Although protection circuitry is designed into the device, take proper precautions to avoid exposure to ESD.

Electrical Characteristics

TC = 25 °C. Determined with a 50 Ω load.
Parameter Symbol Min Typ Max Unit
Capacitance (f < 900 MHz)* 0.65 0.70 pF Rise/Fall Time tR/t Dark Current I Reverse Voltage V
* The minimum capacitance configuration occurs when the N-side of the PIN is grounded and a negative voltage is applied to the P-side, with
the package floating, not grounded (value reference only; not tested in manufacture).
F
D
R
<0.5 ns —1 5nA
2 5 30 V

Optical Characteristics

TC = 25 °C.
Parameter Symbol Min Typ Max Unit
Responsivity R 0.75 0.85 A/W Wavelength Range 1.1 1.6
µ
m
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D171-Type
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Outline Diagram

Advance Data Sheet
PIN Photodetectors March 1999
Dimensions are in inches and (millimeters)
21
0.250 (6.35)
34
0.310 (7.87)
0.195 (4.95)
.
1.25 MAX (31.75)
45.28 ± 1.57 (1150 ± 40)
Ø 0.04
(1.02)
FIBER
Ø 0.180
(4.57)
0.012 TYP
(0.30)
+
0.300 (7.62)
SECTION A-A
4
0.114 (2.90)
0.016 (0.41)
0.100 (2.54)
0.100
A
(2.54)
OPTICAL
CONNECTOR
1-933
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Advance Data Sheet March 1999 D171-Type
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PIN Photodetectors
Qualification Information
The D171-Type PIN Photodetector has completed the following qualification tests and meets the intent of Bellcore TR-NWT-000468 for interoffice environments and TA-NWT-000983 for outside plant environments.
Table 2. D171-Type PIN Photodetector Qualification Test Plan
Test Conditions Sample Size Reference
Mechanical Shock 500 G 11 MIL-STD-883
Method 2002
Vibration 20 g, 20 Hz—2000 Hz 11 MIL-STD-883
Method 2007
Solderability 11 MIL-STD-883
Method 2007
Thermal Shock Delta T = 100 °C 11 MIL-STD-883
Method 2003 Fiber Pull 1 kg; 3 times 11 Bellcore 983 Accelerated (biased) Aging 85 °C, 5000 hrs. 25 Bellcore 983
Section 5.18 High-temperature Storage 85 °C, 2000 hrs. 11 Bellcore 983 Temperature Cycling 500 cycles 11 Bellcore 983
Section 5.20 Cyclic Moisture Resistance 10 cycles 11 Bellcore 983
Section 5.23 Damp Heat 40 °C, 95% RH, 1344 hrs. 11 MIL-STD-202
Method 103
Internal Moisture <5000 ppm water vapor 11 MIL-STD-883
Method 1018
Flammability TR357
Sec. 4.4.2.5
ESD Threshold 6 Bellcore 983
Section 5.22
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Advance Data Sheet
D171-Type
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PIN Photodetectors March 1999

Ordering Information

Device Code Description Comcode
D171C004BAA PIN 4-Lead Package, 50 µm, MM Fiber, SC Connector 108156654
D171C004BAF PIN 4-Lead Package, 50 µm, MM Fiber, FC Connector 108156662
D171C004CAN PIN 4-Lead Package, SM Fiber, No Connector 108271699
For additional information, contact your Microelectronics Group Account Manager or the following:
INTERNET: E-MAIL: N. AMERICA: Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103
ASIA PACIFIC: Microelectronics Group, Lucent Technologies Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256 CHINA: Microelectronics Group, Lucent Technologies (China) Co., Ltd., A-F2, 23/F, Zao Fong Universe Building, 1800 Zhong Shan Xi Road, JAPAN: Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE:
Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information.
Copyright © 1999 Lucent Technologies Inc. All Rights Reserved
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