Datasheet D1005UK Datasheet (Seme)

MECHANICAL DATA

TetraFET

D1005UK

METAL GATE RF SILICON FET

GOLD METALLISED

H

PIN 1 SOURCE PIN 3 SOURCE

DIM mm Tol. Inches Tol.

A 24.76 0.13 0.975 0.005 B 18.42 0.13 0.725 0.005 C 45° 5° 45° 5° D 6.35 0.13 0.25 0.005 E 3.17 Dia. 0.13 0.125 Dia. 0.005 F 5.71 0.13 0.225 0.005 G 12.7 Dia. 0.13 0.500 Dia. 0.005 H 6.60 REF 0.260 REF

I 0.13 0.02 0.005 0.001

J 4.32 0.13 0.170 0.005 K 3.17 0.13 0.125 0.005 M 26.16 0.25 1.03 0.010

A B

1

43

M

G

K

DM

PIN 2 DRAIN PIN 4 GATE

MULTI-PURPOSE SILICON

C

DMOS RF FET

2

D

E

F

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

J

I

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW C

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 16 dB MINIMUM

APPLICATIONS

• HF/VHF COMMUNICATIONS

from 1 MHz to 175 MHz

80W – 28V – 175MHz

SINGLE ENDED

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ABSOLUTE MAXIMUM RATINGS (T

P

D

BV BV I

D(sat)

T

stg

T

j

DSS GSS

Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature

= 25°C unless otherwise stated)

case

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

146W

70V

±20V

20A

–65 to 150°C

200°C

Prelim. 6/99

D1005UK

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter Test Conditions Min. Typ. Max. Unit

BV

I

DSS

I

GSS

V

GS(th)

g

fs

G

PS

η Drain Efficiency VSWR Load Mismatch Tolerance C

iss

C

oss

C

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* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

Drain–Source

DSS

Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage * Forward Transconductance * Common Source Power Gain

Input Capacitance Output Capacitance Reverse Transfer Capacitance

VGS= 0 ID= 100mA

VDS= 28V VGS= 0 VGS= 20V VDS= 0

ID= 10mA VDS= V VDS= 10V ID= 4A PO= 80W VDS= 28V IDQ= 0.4A

f = 175MHz VDS= 0 VGS= –5V f = 1MHz VDS= 28V VGS= 0 f = 1MHz VDS= 28V VGS= 0 f = 1MHz

GS

70

2 1

17

3.2 16 50

20:1

240 100

10

V

mA

µA

V S

dB

%

— pF pF pF

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

R

THj–case

Thermal Resistance Junction – Case Max. 1.2°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

Prelim. 6/99

D1005UK

140

120

100

80

P

out

W

60

40

20

0

0123456789

Pin W

VDS= 28V

I

= 0.4A

DQ

f = 175MHz

Pout Drain Efficiency

90

80

70

60

Drain Efficiency

%

50

40

30

20

Figure 1 – Power Output and Efficiency

vs. Power Input.

-10

-15

-20

-25

IMD3

-30

dBc

-35

-40

-45

-50 020406080100120

P

out

W PEP

VDS= 28V

f

= 175.0MHz

1

f

= 175.1MHz

2

I

= 0.4A

DQ

Idq = 0.4A

140

120

100

80

P

out

W

60

VDS= 28V

40

20

I

= 0.4A

DQ

0

0123456789

f = 175MHz

Pin W

Pout Gain

18

17

16

15

Gain

dB

14

13

12

11

Figure 2 – Power Output & Gain

vs. Power Input.

D1005UK

OPTIMUM SOURCE AND LOAD IMPEDANCE

Frequency Z

S

MHz ΩΩ

175MHz 3 + j1 3 - j2.5

Z

L

Figure 3 – IMD vs. Output Power.

Typical S Parameters

!VDS= 28V, IDQ= 0.3A # MHZ S MA R 50

!Freq S11 S21 S12 S22 MHz mag ang mag ang mag ang mag ang

50 0.95 -58 4.29 94 0.006 34 0.66 -162 100 0.94 -79 3.32 81 0.006 57 0.75 -164 150 0.94 -104 2.26 65 0.01 98 0.84 -169 200 0.93 -124 1.59 53 0.019 107 0.88 -175 250 0.94 -140 1.2 41 0.031 103 0.92 -180 300 0.95 -152 0.94 34 0.042 102 0.93 176 350 0.96 -161 0.72 22 0.052 92 0.96 170 400 0.96 -169 0.59 19 0.064 91 0.98 164 450 0.97 -177 0.46 11 0.073 84 1.00 159 500 0.98 177 0.35 -2 0.091 82 1.00 154

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

Prelim. 6/99

5-57pF

Gate-Bias

T1 T2

5-57pF

10k

D1005UK

+28V

Ω

10nF

10k

Ω

L1

7 x 7mm

contact pad

D1005UK

7 x 7 mm contact pad

L3

L2

T3

1µF1nF

22µF

5-57pF

T4

5-57pF

T1 8mm T2 22mm T3 18mm T4 4.5mm

D1005UK 175MHz TEST FIXTURE

Substrate 1.6mm PTFE/ glass, Er= 2.5

All microstrip lines W= 4.4mm

L1 Hairpin loop 16swg 15.5mm dia L2 Hairpin loop 16swg 10mm dia L3 11 turns 18swg enamelled copper wire, 10mm i.d.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: [email protected]

Website: http://www.semelab.co.uk

Prelim. 6/99