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Elektronische Bauelemente
DESCRIPTION
The CZD5103 is designed for high speed switching applications.
FEATURES
Low saturation voltage, typically V
High speed switching, typically T
Wide SOA
Complements to CZD1952
= 0.15V at IC/IB= 3A/0.15A
CE(sat)
= 0.1s at IC= 3A
f
CZD5103
NPN Epitaxial Planar Silicon Transistor
D-Pack (TO-252)
A
B
G E
C
D
MARKING
5103
Date Code
Base
1
SWITCHING TIME TEST CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector
Emitte
FHK
M
REF.
J
Millimeter
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
REF.
Millimete
N
O
P
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) IC 6
Collector Current (Pulse) IC 20
Total Device Dissipation
(T
=25°C)
A
Total Device Dissipation
(T
=25°C)
C
Junction Temperature TJ 150 ℃
Storage Temperature T
100 V
CBO
60 V
CEO
5 V
EBO
A
A
1 W
P
D
10 W
P
D
-55 ~ 150 ℃
STG
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A Page 1 of 4
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CZD5103
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit Test Conditions
NPN Epitaxial Planar Silicon Transistor
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
*V
100 - - V I
(BR)CBO
60 - - V I
(BR)CEO
5 - - V I
(BR)EBO
- - 10 A V
CBO
- - 10 A V
EBO
1 - 0.15 0.3 V I
CE(sat)
Collector-emitter saturation voltage
*V
*V
2 - - 0.5 V I
CE(sat)
1 - - 1.2 V I
BE(sat)
Base-emitter saturation voltage
*V
2 - - 1.5 V I
BE(sat)
*h
1 120 - 270 V
FE
*DC current gain
*hFE2 40 - - V
Transition frequency fT - 210 - MHz
Output Capacitance COB - 80 - pF V
Turn-On Time TON - - 0.3
=50 A, IE=0
C
=1mA, IB=0
C
=50 A, IC=0
E
=100V, IE=0
CB
=5V, IC=0
EB
=3A, IB=0.15A
C
=4A, IB=0.2A
C
=3A, IB=0.15A
C
=4A, IB=0.2A
C
=2V, IC=1A
CE
=2V, IC=3A
CE
V
=10V, IE=-0.5A,
CB
f=30MHz
=10V, IE=0, f=1MHz
CE
Storage Time T
- - 1.5
STG
Fall Time Tf - 0.1 0.3
*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%
I
=3A, RL=10Ω,
C
S
I
=-IB2=0.15A, VCC=30V
B1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
CZD5103
NPN Epitaxial Planar Silicon Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
CZD5103
NPN Epitaxial Planar Silicon Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A Page 4 of 4
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