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Elektronische Bauelemente
DESCRIPTION
The CZD2983 is designed for power amplifier and driver stage amplifier
applications.
FEATURES
High transition frequency：fT = 100MHz (Typ.)
Complements to CZD1225
CZD2983
NPN Epitaxial Planar Silicon Transistor
D-Pack (TO-252)
A
B
C
D
MARKING
2983
Date Code
Collector
Base
M
2
1
3
Emitte
Millimeter
REF.
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G5.40 6.2
H0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current IC 1.5
Base Current IB 0.3
Total Device Dissipation
(T
=25°C)
A
Total Device Dissipation
(T
=25°C)
C
Junction Temperature TJ 150 ℃
Storage Temperature T
160 V
CBO
160 V
CEO
5 V
EBO
1 W
P
D
15 W
P
D
-55 ~ 150 ℃
STG
G E
FHK
J
REF.
Millimete
N
O
P
A
A
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Sep-2010 Rev. A Page 1 of 3
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CZD2983
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit Test Conditions
NPN Epitaxial Planar Silicon Transistor
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
160 - - V I
CBO
160 - - V I
CEO
5 - - V I
EBO
- - 1 A V
CBO
- - 1 A V
EBO
* - - 1.5 V I
CE(sat)
* - - 1.0 V V
BE(on)
*DC current gain hFE * 70 - 240 V
Transition frequency fT - 100 - MHz V
Output Capacitance COB - 25 - pF V
*Measured under pulse condition. Pulse width ≦ 300μs, Duty Cycle ≦ 2%
CLASSIFICATION OF hFE
= 1mA, IE=0
C
= 10mA, IB=0
C
= 1mA, IC=0
E
= 160V, IE=0
CB
= 5V, IC=0
EB
= 500mA, IB= 50mA
C
= 5V, IC= 500mA
CE
= 5V, IC= 100mA
CE
= 10V, IC= 100mA
CE
=10V, IE=0, f=1MHz
CB
Rank O Y
Range 70 ~ 140 120 ~ 240
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Sep-2010 Rev. A Page 2 of 3
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Elektronische Bauelemente
CHARACTERISTIC CURVES
CZD2983
NPN Epitaxial Planar Silicon Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Sep-2010 Rev. A Page 3 of 3
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