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Elektronische Bauelemente
DESCRIPTION
The CZD1386 is designed for low frequency applications.
FEATURES
CZD1386
-5 A, -30 V
PNP Epitaxial Silicon Transistor
z Low V
z Excellent DC current gain characteristics
= -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A)
CE(sat)
PACKAGE DIMENSIONS
REF.
Millimete
Min. Max.
A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.40 3.00 K 0 0.15
E 2.30 Ref. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20
REF.
Millimeter
Min. Max.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current IC -5
*Collector Current (Pulse) IC -10 A
Total Power Dissipation Pc 20 W
Junction, Storage Temperature TJ, T
-30 V
CBO
-20 V
CEO
-6 V
EBO
+150, -55 ~ +150 ℃
STG
A
CHARACTERISTICS at Ta = 25°C
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -30 - - V IC=-50uA
BVCEO -20 - - V IC=-1mA
BVEBO -6 - - V IE=-50uA
ICBO - - -500 nA VCB=-20V
IEBO - - -500 nA VEB=-5V
*VCE(sat) - - -1 mV IC=-4A, IB=-0.1mA
*hFE 82 - 580 VCE=-2V, IC=-0.5mA
fT - 120 - MHz VCE=-6V, IE=50mA, f=30MHz
Cob - 60 - pF VCB=-20V, IE=0, f=1MHz
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF hFE1
Rank P Q R E
Range 82 - 180 120 - 270 180 - 390 370 - 580
01-June-2002 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
CZD1386
PNP Epitaxial Silicon Transistor
-5 A, -30 V
01-June-2002 Rev. A Page 2 of 2
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