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CZD1182
Elektronische Bauelemente
FEATURES
The CZD1182 is designed for medium power amplifier application
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
MARKING : 1182
(With Date Code)
0. 20
Ć
9. 70
2. 30 0. 10
Ć
6. 50 0. 15
5. 30 0. 10
0. 10
Ć
0. 75
B C E
PNP Silicon
General Purpose Transistor
TO-252
Ć
Ć
C
Ć
0. 80 0. 10
0. 60 0. 10
Ć
2. 30 0. 10
Ć
0. 51 0. 05
Ć
0. 51 0. 10
Ć
0 0. 10
Ć
0. 15
1. 60
1. 20
5
0
Ć
Ć
MAXIMUM RATINGS* TA=25OC unless otherwise noted
Parameter Symbol Value Units
Collector-Base Voltage VCBO -40
Collector-Emitter Voltage VCEO -32 V
Emitter-Base Voltage VEBO -5
Collector Current -Continuous IC -2
Collector Current -Pulse,Pw=100mS IC -3
Collector Dissipation PC 10 W
Junction and Storage Temperature
TJ, Tstg
+150
,-55~+150
0. 51
9
V
V
A
ć
2. 30 0. 10
5
A
Ć
5
0. 10
Ć
5. 50
0. 6
0. 20
Ć
2. 70
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
V
Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -40
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE
V
(BR)CEO
V
(BR)EBO IE
I
CBO
I
EBO
h
V
CE(sat)
f
C
Ic= -1mA,IB=0 -32 V
= -50µA, IC=0
=-20V,IE=0 -1 uA
V
CB
-5
VEB=-4V,IC=0 -1 uA
VCE=-3V,IC=-500mA
FE
82
IC=-2000mA,IB=-200mA -500 -800 mV
VCE=-5V,Ic=500mA,f=100MHz 100 MHz
T
VCB=-10V,f=1MHz 50 pF
ob
Rank P Q R
V
390
Range
http://www.SeCoSGmbH.com
82 - 180 120 - 270 180
Any changing of specification will not be informed individual
- 390
01-Jun-2006 Rev. A
Page 1 of 2
Page 2
Elektronische Baue lemente
Electrical characteristic curves
CZD1182
PNP Silicon
General Purpose Transistor
01-Jun-2006 Rev. A
Page 2of 2
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