Output Leakage CurrentGND < VO < VCC, Output Disabled−5+5−5+5µA
Output Short
Circuit Current
[2]
VCC Operating
Supply Current
Automatic CE Power Down
Current—TTL Inputs
[3]
Automatic CE Power-Down
Current—CMOS Inputs
[4]
VCC = Max., V
VCC = Max., I
MAX
= 1/t
f = f
= GND−300−300mA
OUT
= 0 mA,
OUT
RC
Max. VCC, CE > VIH, VIN > VIH or
< VIL, f = f
V
IN
Max. VCC, CE > VCC − 0.3V,
[3]
> VCC − 0.3V or VIN < 0.3V
V
IN
MAX
ParameterDescriptionTest ConditionsMax.Unit
C
C
IN
OUT
Input CapacitanceTA = 25°C, f = 1 MHz,
= 5.0V
V
Output Capacitance10pF
CC
7C197-20
7C197-25, 35, 45
UnitMin.Max.Min.Max.
CC
+ 0.3V
2.2V
+ 0.3V
CC
−0.50.8−0.50.8V
−5+5−5+5µA
13595mA
3030mA
1515mA
8pF
V
5V
OUTPUT
INCLUDING
[5]
5pF
JIG AND
SCOPE
R1 329
Ω
R2
Ω
255
(255Ω MIL)
C197-4
AC Test Loads and Wavefor ms
R1 329
Ω
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:THÉ VENIN EQUIVALENT
OUTPUT1.90V
R2
Ω
202
(255Ω MIL)
(a)(b)
125Ω
Commercial
Notes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. t
= < 3 ns for the -12 and -15 speeds. tr = < 5 ns for the -20 and slower speeds.
r
3.0V
GND
10%
<t
ALL INPUT PULSES
90%
r
90%
10%
<t
r
C197-5
Document #: 38-05049 Rev. **Page 3 of 10
Page 4
CY7C197
Switching Characteristics Over the Operating Range
7C197-12
7C197-157C197-207C197-257C197-357C197-45
[6]
ParameterDescription
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
LZCE
t
HZCE
t
PU
t
PD
WRITE CYCLE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
Notes:
6. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of
1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I
7. At any given temperature and voltage condition, t
8. t
HZCE
9. The internal write time of the memory is defined by the overlap of CE
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
Read Cycle Time121520253545ns
Address to
121520253545ns
Data Valid
Output Hold from
333333ns
Address Change
CE LOW to
121520253545ns
Data Valid
CE LOW to
[7]
Low Z
CE HIGH to
[7, 8]
High Z
CE LOW to
333333ns
5709011015015ns
000000ns
Power-Up
CE HIGH to
121520202530ns
Power-Down
[9]
Write Cycle T im e121520253545ns
CE LOW to
91015203040ns
Write End
Address Set-Up to
91015203040ns
Write End
Address Hold from
000000ns
Write End
Address Set-Up to
000000ns
Write Start
WE Pulse Width8915202530ns
Data Set-Up to
8910151720ns
Write End
Data Hold from
000000ns
Write End
WE HIGH to
Low Z
WE LOW to
High Z
and t
HZWE
[7]
[7,8]
are specified with CL = 5 pF as in part (b) in AC Test Loads and Waveforms. Transition is measured ±500 mV from steady-state voltage.
223333ns
77010011015015ns
and 30-pF load capacitance.
is less than t
HZCE
OL/IOH
and t
LZCE
LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
HZWE
is less than t
for any given device.
LZWE
UnitMin. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
Document #: 38-05049 Rev. **Page 4 of 10
Page 5
Switching Waveforms
CY7C197
Read Cycle No. 1
[10, 11]
ADDRESS
DATA OUTPREVIOUS DATA VALID
Read Cycle No. 2
[10]
CE
t
LZCE
DATA OUT
V
CC
SUPPLY
HIGH IMPEDANCE
t
PU
CURRENT
Write Cycle No.1
Controlled)
(WE
t
ACE
t
OHA
50%
[9]
t
RC
t
AA
DATA VALID
C197-6
t
RC
t
DATA VALID
HZCE
t
PD
HIGH
IMPEDANCE
ICC
50%
ISB
C197-7
ADDRESS
CE
WE
DATA IN
DATA OUT
Notes:
is HIGH for read cycle.
10. WE
11. Device is continuously selected, CE
t
SA
DATA UNDEFINED
= VIL.
t
SCE
t
AW
t
WC
t
DATA VALID
t
HZWE
PWE
t
SD
t
HA
t
HD
t
LZWE
HIGH IMPEDANCE
C197-8
Document #: 38-05049 Rev. **Page 5 of 10
Page 6
Switching Waveforms (continued)
CY7C197
Write Cycle No. 2 (CE Controlled)
ADDRESS
t
SA
CE
WE
DATA IN
DATA OUT
Note:
12. If CE
goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.