Datasheet CY7C1339F Datasheet (CYPRESS)

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CY7C1339F

4-Mbit (128K x 32) Pipelined Sync SRAM

Features

• Registered inputs and outputs for pipelined operation

• 128K × 32 common I/O architecture

• 3.3V core power supply

• 2.5V / 3.3V I/O operation

• Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

— 2.6 ns (for 225-MHz device)

— 2.8 ns (for 200-MHz device)

— 3.5 ns (for 166-MHz device)

— 4.0 ns (for 133-MHz device)

— 4.5 ns (for 100-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel
Pentium



interleaved or linear burst sequences



• Separate processor and controller address strobes

• Synchronous self-timed writes

• Asynchronous output enable

• Offered in JEDEC-standard 100-pin TQFP and 119-ball
BGA packages

• “ZZ” Sleep Mode Option

Logic Block Diagram

Functional Description

[1]

The CY7C1339F SRAM integrates 131,072 x 32 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(

), depth-expansion Chip Enables (CE2 and

CE

1

Control inputs (
(

BW

inputs include the Output Enable (

[A:D]

, and

BWE

,

ADSC

), and Global Write (GW). Asynchronous

ADSP

,

and

OE

), Write Enables

ADV

) and the ZZ pin.

CE

), Burst

3

Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (
Address Strobe Controller (

) are active. Subsequent

ADSC

ADSP

) or

burst addresses can be internally generated as controlled by
the Advance pin (

ADV

).

Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs.

causes all bytes to be written.

LOW

when active

GW

The CY7C1339F operates from a +3.3V core power supply
while all outputs may operate with either a +2.5 or +3.3V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.

A0,A1, A

MODE

ADV

CLK

ADSC

ADSP

BW

D

BW

C

BW

B

BW

A

BWE

GW

CE

1

CE

2

CE

3

OE

ZZ

1

WRITE REGISTER

WRITE REGISTER

WRITE REGISTER

WRITEREGISTER

SLEEP

CONTRO L

DQ
BYTE

DQ

BYTE

DQ

BYTE

DQ
BYTE

REGISTER

D

C

B

A

ENABLE

ADDRESS
REGISTER

2

BURST

COUNTE R

CLR

LOGIC

PIPELINED

ENABLE

AND

A

[1:0]

Q1

Q0

D

DQ
BYTE

WRITEDRIVER

C

DQ

BYTE

WRITEDRIVER

B

DQ

BYTE

WRITEDRIVER

DQ

A

BYTE

WRITEDRIVER

MEMORY

ARRAY

SENSE
AMPS

OUTPUT

REGISTERS

OUTPUT
BUFFERS

E

INPUT

REGISTERS

DQs

Note:

1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05217 Rev. *C Revised April 09, 2004

CY7C1339F

Selection Guide

250 MHz 225 MHz 200 MHz 166 MHz 133 MHz 100 MHz Unit

Maximum Access Time

Maximum Operating Current 325 290 265 240 225 205 mA

Maximum CMOS Standby Current

Shaded areas contain advanced information. Please contact your local Cypress sales representative for availability of these parts.

Pin Configurations

2.6 2.6 2.8 3.5 4.0 4.5 ns

40 40 40 40 40 40 mA

BYTE C

BYTE D

V

V

V

V

V

V

V

V

NC
DQ
DQ

DDQ

SSQ

DQ
DQ
DQ
DQ

SSQ

DDQ

DQ
DQ

NC

V

NC

V
DQ
DQ

DDQ

SSQ

DQ
DQ
DQ
DQ

SSQ

DDQ

DQ
DQ

NC

DD

SS

AACE1CE2BWDBWCBWBBWACE3VDDVSSCLKGWBWEOEADSC

100999897969594939291908988878685848382

1

C

C

2
3
4
5

C

C

C

C

6
7
8
9
10
11

C

C

D

D

12
13
14
15
16
17
18
19

100-pin TQFP

CY7C1339F

20
21

D

D

D

D

22
23
24
25
26
27

D

D

28
29
30

ADSP

ADVAA

80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51

81

NC
DQ
DQ
V
V
DQ
DQ
DQ
DQ
V
V
DQ
DQ
V
NC
V
ZZ
DQ
DQ
V
V
DQ
DQ
DQ
DQ
V
V
DQ
DQ
NC

DDQ

SSQ

SSQ

DDQ

SS

DD

DDQ

SSQ

SSQ

DDQ

B

B

B

BYTE B

B

B

B

B

B

A

A

A

A

BYTE A

A

A

A

A

31323334353637383940414243444546474849

1

A

AAA

0

A

A

NC

NC

SS

V

V

DD

NC

NC

AAA

AAA

50

A

MODE

Document #: 38-05217 Rev. *C Page 2 of 17

Pin Configurations (continued)

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

T

U

V

DQ

V

DQ

DQ

V

DQ

DQ

V

DQ

DQ

V

DDQ

NC

NC

DDQ

DDQ

DDQ

NC

NC

DDQ

CY7C1339F

119-ball BGA

CY7C1339F (128K × 32)

2345671

AA AA

CE

2

A

AA

C

C

C

C

D

D

D

D

NCDQ

DQ

DQ

DQ

DQ

V

DQ

DQ

DQ
DQ

NC

C

C

C

C

DD

D

D

D

D

A

V

SS

V

SS

V

SS

BW

V

SS

NC V

V

SS

BW

V

SS

V

SS

V

SS

MODE

AA A

ADSP

ADSC

V

DD

NC

CE

1

OE

ADV

c

GW

DD

CLK

D

NC

BWE

A1

A0

V

DD

A

V

V

V

BW

V

NC

V

BW

V
V

V

NC

SS

SS

SS

SS

SS

SS

SS

SS

NC

AA

NC

DQ

DQ

DQ

B

DQ

V

DD

DQ

DQ

A

DQ
DQ

NC

A

NCNC

NCNCNCNC

NC

V

DDQ

NC

NC

DQ

B

DQ

V

DQ

DQ

V

DQ

DQ

V

DQ

DQ

B

DDQ

B

B

DDQ

A

A

DDQ

A

A

B

B

B

B

A

A

A

A

NC

ZZ

V

DDQ

Pin Definitions

Name BGA TQFP I/O Description

A

, A1, A P4,N4,

0

A2,C2,R2,
A3,B3,C3,

T3,T4,A5,

B5,C5,T5,

A6,C6,R6

37,36,
32,33,34,
35,44,45,
46,47,48,
49,50,81,

82,99,

Input-

Synchronous

100

BW

A,BWB

BWC,BW

GW

BWE

L5,G5,G3,L393,94,95,

D

H4

M4 87 Input-

96

88 Input-

Input-

Synchronous

Synchronous

Synchronous

CLK K4 89 Input-

Clock

CE

CE

1

2

E4 98 Input-

Synchronous

B2 97 Input-

Synchronous

Address Inputs used to select one of the 128K address locations.
Sampled at the rising edge of the CLK if
and CE
counter.

, and CE3 are sampled active. A1, A0 are fed to the two-bit

1, CE2

.

Byte Write Select Inputs, active LOW. Qualified with BWE
byte writes to the SRAM. Sampled on the rising edge of CLK

Global Write Enable Input, active LOW. When asserted LOW on the
rising edge of CLK, a global write is conducted (ALL bytes are written,
regardless of the values on BW

[A:D]

Byte Write Enable Input, active LOW. Sampled on the rising edge of
CLK. This signal must be asserted LOW to conduct a byte write.

Clock Input. Used to capture all synchronous inputs to the device. Also
used to increment the burst counter when ADV
a burst operation.

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK.
Used in conjunction with CE
ADSP

is ignored if CE1 is HIGH.

and CE3 to select/deselect the device.

2

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK.
Used in conjunction with CE

and CE3 to select/deselect the device.

1

and BWE).

ADSP

or

is active LOW,

ADSC

is asserted LOW, during

to conduct

.

Document #: 38-05217 Rev. *C Page 3 of 17

Pin Definitions (continued)

Name BGA TQFP I/O Description

CE

3

OE

ADV

ADSP

ADSC

- 92 Input­Synchronous

F4 86 Input-

Asynchronous

G4 83 Input-

Synchronous

A4 84 Input-

Synchronous

B4

85 Input-

Synchronous

ZZ T7 64 Input-

Asynchronous

DQs

K6,L6,M6,

N6,K7,L7,
N7,P7,E6,
F6,G6,H6,
D7,E7,G7,
H7,D1,E1,
G1,H1,E2,
F2,G2,H2,

K1,L1,N1,

P1,K2,L2,

52,53,56,
57,58,59,
62,63,68,
69,72,73,
74,75,78,

79,2,3,6,

7,8,9,12,
13,18,19,
22,23,24,

25,28,29

I/O-

Synchronous

M2,N2

V

DD

J2,J4,R4 15,41,65,91Power Supply Power supply inputs to the core of the device.

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK.
Used in conjunction with CE

and CE2 to select/deselect the device.

1

connected for BGA. Where referenced, CE
throughout this document for BGA.

Output Enable, asynchronous input, active LOW. Controls the
direction of the I/O pins. When LOW, the I/O pins behave as outputs.
When deasserted HIGH, I/O pins are three-stated, and act as input data
pins. OE

is masked during the first clock of a read cycle when emerging

from a deselected state.

Advance Input signal, sampled on the rising edge of CLK, active
LOW. When asserted, it automatically increments the address in a burst

cycle.

Address Strobe from Processor, sampled on the rising edge of
CLK, active LOW. When asserted LOW, addresses presented to the

device are captured in the address registers. A1, A0 are also loaded into
the burst counter. When ADSP
is recognized. ASDP

is ignored when CE1 is deasserted HIGH.

and ADSC are both asserted, only ADSP

Address Strobe from Controller, sampled on the rising edge of
CLK, active LOW. When asserted LOW, addresses presented to the

device are captured in the address registers. A1, A0 are also loaded into
the burst counter. When ADSP

and ADSC are both asserted, only ADSP

is recognized.

ZZ “sleep” Input, active HIGH. When asserted HIGH places the device
in a non-time-critical “sleep” condition with data integrity preserved. For
normal operation, this pin has to be LOW or left floating. ZZ pin has an
internal pull-down.

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data
register that is triggered by the rising edge of CLK. As outputs, they
deliver the data contained in the memory location specified by the
addresses presented during the previous

The direction of the pins is controlled by OE
the pins behave as outputs. When HIGH, DQs are placed in a three-state
condition.

CY7C1339F

Not

is assumed active

3

clock rise of the read cycle.

. When OE is asserted LOW,

V

SS

D3,E3,F3,
K3,M3,N3,

17,40,67,

90

Ground Ground for the core of the device.

P3,D5,E5,
F5,H5,K5,

M5,N5,P5

V

DDQ

A1,F1,J1,

M1,U1,A7,

F7,J7,M7,

4,11,20,

27,54,61,

70,77

I/O Power

Supply

Power supply for the I/O circuitry.

U7

V

SSQ

- 5,10,21,
26,55,60,

I/O Ground Ground for the I/O circuitry.

71,76

MODE R3 31 Input-

Static

Selects Burst Order. When tied to GND selects linear burst sequence.
When tied to V
is a strap pin and should remain static during device operation. Mode

or left floating selects interleaved burst sequence. This

DD

Pin has an internal pull-up.

Document #: 38-05217 Rev. *C Page 4 of 17

Pin Definitions (continued)

Name BGA TQFP I/O Description

NC B1,C1,R1,

T1,D2,P2,

T2,U2,J3,

U3,D4,L4,

U4,J5,U5,
B6,D6,P6,
T6,U6,B7,

C7,R5,R7

1,14,16,
30,38,39,
42,43,51,

66,80

No Connects. Not internally connected to the die

CY7C1339F

Functional Overview

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t
(166-MHz device).

The CY7C1339F supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV

input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.

Byte Write operations are qualified with the Byte Write Enable
(BWE

) and Byte Write Select (BW

Enable (GW

) overrides all Byte Write inputs and writes data to

) inputs. A Global Write

[A:D]

all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.

Three synchronous Chip Selects (CE
asynchronous Output Enable (OE

, CE2, CE3) and an

1

) provide for easy bank
selection and output three-state control. ADSP
CE

is HIGH.

1

Single Read Accesses

This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP

or ADSC is asserted LOW, (2)

CE1, CE2, CE3 are all asserted active, and (3) the Write
signals (GW
CE

is HIGH. The address presented to the address inputs (A)

1

is stored into the address advancement logic and the Address

, BWE) are all deserted HIGH. ADSP is ignored if

Register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 3.5 ns (166-MHz device) if OE
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always three-stated during the first cycle of the access. After
the first cycle of the access, the outputs are controlled by the
OE

signal. Consecutive single Read cycles are supported.
Once the SRAM is deselected at clock rise by the chip select
and either ADSP or ADSC signals, its output will three-state
immediately.

) is 3.5 ns

CO

is ignored if

is active

Single Write Accesses Initiated by ADSP

This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP
(2) CE
presented to A is loaded into the address register and the

, CE2, CE3 are all asserted active. The address

1

is asserted LOW, and

address advancement logic while being delivered to the
memory array. The Write signals (GW
ADV

inputs are ignored during this first cycle.

ADSP

-triggered Write accesses require two clock cycles to

complete. If GW

is asserted LOW on the second clock rise, the

, BWE, and BW

[A:D]

) and

data presented to the DQs inputs is written into the corre­sponding address location in the memory array. If GW is HIGH,
then the Write operation is controlled by BWE
signals. The CY7C1339F provides Byte Write capability that is

and BW

[A:D]

described in the Write Cycle Descriptions table. Asserting the
Byte Write Enable input (BWE
(BW
Bytes not selected during a Byte Write operation will remain

) input, will selectively write to only the desired bytes.

[A:D]

) with the selected Byte Write

unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.

Because the CY7C1339F is a common I/O device, the Output
Enable (OE) must be deserted HIGH before presenting data
to the DQs inputs. Doing so will three-state the output drivers.
As a safety precaution, DQs are automatically three-stated
whenever a Write cycle is detected, regardless of the state of
OE

.

Single Write Accesses Initiated by ADSC

ADSC Write accesses are initiated when the following condi­tions are satisfied: (1) ADSC
deserted HIGH, (3) CE
(4) the appropriate combination of the Write inputs (GW
and BW
desired byte(s). ADSC

) are asserted active to conduct a Write to the

[A:D]

is asserted LOW, (2) ADSP is

, CE2, CE3 are all asserted active, and

1

, BWE,

-triggered Write accesses require a
single clock cycle to complete. The address presented to A is
loaded into the address register and the address
advancement logic while being delivered to the memory array.
The ADV

input is ignored during this cycle. If a global Write is
conducted, the data presented to the DQs is written into the
corresponding address location in the memory core. If a Byte
Write is conducted, only the selected bytes are written. Bytes
not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.

Because the CY7C1339F is a common I/O device, the Output
Enable (OE

) must be deserted HIGH before presenting data
to the DQs inputs. Doing so will three-state the output drivers.
As a safety precaution, DQs are automatically three-stated
whenever a Write cycle is detected, regardless of the state of
OE

.

Document #: 38-05217 Rev. *C Page 5 of 17

CY7C1339F

Burst Sequences

The CY7C1339F provides a two-bit wraparound counter, fed
by A1, A0, that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed specif­ically to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input.

Asserting ADV

LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
t

he “sleep” mode. CE

remain inactive for the duration of t
returns LOW.

, CE2, CE3, ADSP, and ADSC must

1

after the ZZ input

ZZREC

Interleaved Burst Address Table
(MODE = Floating or V

First

Address

A1, A0

Second

Address

A1, A0

DD

)

Third

Address

A1, A0

Fourth

Address

A1, A0

00 01 10 11

01 00 11 10

10 11 00 01

11 10 01 00

Linear Burst Address Table (MODE = GND)

First

Address

A1, A0

00 01 10 11

01 10 11 00

10 11 00 01

11 00 01 10

Second

Address

A1, A0

Third

Address

A1, A0

Fourth

Address

A1, A0

ZZ Mode Electrical Characteristics

Parameter Description Test Conditions Min. Max. Unit

I

DDZZ

t

ZZS

t

ZZREC

t

ZZI

t

RZZI

Truth Table

Operation Add. Used

Deselect Cycle, Power-down None H X X L X L X X X L-H three-state

Deselect Cycle, Power-down None L L X L L X X X X L-H three-state

Deselect Cycle, Power-down None L X H L L X X X X L-H three-state

Deselect Cycle, Power-down None L L X L H L X X X L-H three-state

Deselect Cycle, Power-down None L X H L H L X X X L-H three-state

Snooze Mode, Power-down None X X X H X X X X X X three-state

READ Cycle, Begin Burst External L H L L L X X X L L-H Q

READ Cycle, Begin Burst External L H L L L X X X H L-H three-state

WRITE Cycle, Begin Burst External L H L L H L X L X L-H D

READ Cycle, Begin Burst External L H L L H L X H L L-H Q

READ Cycle, Begin Burst External L H L L H L X H H L-H three-state

READ Cycle, Continue Burst Next X X X L H H L H L L-H Q

Notes:

2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.

3. WRITE

4. The DQ pins are controlled by the current cycle and the

5. CE

6. The SRAM always initiates a read cycle when ADSP

7.

= L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte write enable signals

(BW

, BWB, BWC, BWD), BWE, GW = H.

A

, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2.

1

after the

ADSP

a don't care for the remainder of the write cycle

is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE

OE
is

inactive or when the device is deselected, and all data bits behave as output when

Snooze mode standby current ZZ > VDD – 0.2V 40 mA

Device operation to ZZ ZZ > VDD – 0.2V 2t

ZZ recovery time ZZ < 0.2V 2t

CYC

ZZ active to snooze current This parameter is sampled 2t

CYC

CYC

ZZ Inactive to exit snooze current This parameter is sampled 0 ns

[ 2, 3, 4, 5, 6, 7]

or with the assertion of

CE

CE

1

signal. OE is asynchronous and is not sampled with the clock.

OE

is asserted, regardless of the state of GW, BWE, or BW

. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is

ADSC

CE

2

ZZ

3

ADSP

OE

ADSC ADV

is active (LOW)

.

WRITE

. Writes may occur only on subsequent clocks

[A: D]

CLK DQ

OE

ns

ns

ns

Document #: 38-05217 Rev. *C Page 6 of 17

CY7C1339F

Truth Table

[ 2, 3, 4, 5, 6, 7]

Operation Add. Used

CE

CE

CE

2

1

ZZ

3

ADSP

ADSC ADV

WRITE

CLK DQ

OE

READ Cycle, Continue Burst Next X X X L H H L H H L-H three-state

READ Cycle, Continue Burst Next H X X L X H L H L L-H Q

READ Cycle, Continue Burst Next H X X L X H L H H L-H three-state

WRITE Cycle, Continue Burst Next X X X L H H L L X L-H D

WRITE Cycle, Continue Burst Next H X X L X H L L X L-H D

READ Cycle, Suspend Burst Current X X X L H H H H L L-H Q

READ Cycle, Suspend Burst Current X X X L H H H H H L-H three-state

READ Cycle, Suspend Burst Current H X X L X H H H L L-H Q

READ Cycle, Suspend Burst Current H X X L X H H H H L-H three-state

WRITE Cycle, Suspend Burst Current X X X L H H H L X L-H D

WRITE Cycle, Suspend Burst Current H X X L X H H L X L-H D

Partial Truth Table for Read/Write

Function

[2, 8]

GW BWE

BW

D

BW

C

BW

B

BW

A

Read HHXXXX

Read HLHHHH

Write Byte A – DQ

Write Byte B – DQ

A

B

HLHHHL

HLHHLH

Write Bytes B, A H L H H L L

Write Byte C– DQ

C

HLHLHH

Write Bytes C, A H L H L H L

Write Bytes C, B H L H L L H

Write Bytes C, B, A H L H L L L

Write Byte D– DQ

D

HL LHHH

Write Bytes D, A H L L H H L

Write Bytes D, B H L L H L H

Write Bytes D, B, A H L L H L L

Write Bytes D, C H L L L H H

Write Bytes D, C, A H L L L H L

Write Bytes D, C, B HLLLLH

Write All Bytes HLLLLL

Write All Bytes LXXXXX

Notes:

8. Table only lists a partial listing of the byte write combinations. Any combination of BW

is valid. Appropriate write will be done based on which byte write is active.

[A:D]

Document #: 38-05217 Rev. *C Page 7 of 17

CY7C1339F

Maximum Ratings

(Above which the useful life may be impaired. For user guide­lines, not tested.)

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage on V

Relative to GND........ –0.5V to +4.6V

DD

DC Voltage Applied to Outputs

in three-state ....................................... –0.5V to V

DC Input Voltage....................................–0.5V to V

DDQ

DD

+ 0.5V

+ 0.5V

Electrical Characteristics Over the Operating Range

Current into Outputs (LOW)......................................... 20 mA

Static Discharge Voltage........................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-up Current..................................................... >200 mA

Operating Range

Range

Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V –5%

Industrial –40°C to +85°C

[9, 10]

Ambient

Tem per atu re V

DD

V

to V

DDQ

DD

Parameter Description Test Conditions Min. Max. Unit

V

V

V

V

V

V

I

I

I

DD

DDQ

OH

OL

IH

IL

X

OZ

DD

Power Supply Voltage 3.135 3.6 V

I/O Supply Voltage 2.375 V

Output HIGH Voltage V

Output LOW Voltage V

Input HIGH Voltage

Input LOW Voltage

[9]

[9]

Input Load Current
except ZZ and MODE

Input Current of MODE Input = V

Input Current of ZZ Input = V

Output Leakage Current GND ≤ VI ≤ V

VDD Operating Supply
Current

= 3.3V, VDD = Min., I

DDQ

V

= 2.5V, VDD = Min., I

DDQ

= 3.3V, VDD = Min., I

DDQ

V

= 2.5V, VDD = Min., I

DDQ

V

= 3.3V 2.0 VDD + 0.3V V

DDQ

V

= 2.5V 1.7 VDD + 0.3V V

DDQ

V

= 3.3V –0.3 0.8 V

DDQ

V

= 2.5V –0.3 0.7 V

DDQ

GND ≤ VI ≤ V

Input = V

Input = V

V

= Max., I

DD

f = f

MAX

SS

DD

SS

DD

= 1/t

DDQ

Output Disabled –5 5 µA

DDQ,

= 0 mA,

OUT

CYC

= –4.0 mA 2.4 V

OH

= –1.0 mA 2.0 V

OH

= 8.0 mA 0.4 V

OL

= 1.0 mA 0.4 V

OL

–5 5 µA

–30 µA

–5 µA

4-ns cycle, 250 MHz 325 mA

4.4-ns cycle, 225 MHz 290 mA

DD

5 µA

30 µA

5-ns cycle, 200 MHz 265 mA

6-ns cycle, 166 MHz 240 mA

7.5-ns cycle, 133 MHz 225 mA

10-ns cycle, 100 MHz 205 mA

I

SB1

Automatic CE
Power-down
Current—TTL Inputs

V

= Max, Device Deselected,

DD

≥ VIH or VIN ≤ V

V

IN

f = f

MAX

= 1/t

IL

CYC

4-ns cycle, 250 MHz 120 mA

4.4-ns cycle, 225 MHz 115 mA

5-ns cycle, 200 MHz 110 mA

6-ns cycle, 166 MHz 100 mA

7.5-ns cycle, 133 MHz 90 mA

10-ns cycle, 100 MHz 80 mA

I

SB2

Shaded area contains advanced information.

Notes:

9. Overshoot: V

10. TPower-up: Assumes a linear ramp from 0v to V

Automatic CE
Power-down
Current—CMOS Inputs

(AC) < VDD +1.5V (Pulse width less than t

IH

V

DD

V

IN

f = 0

DD

= Max, Device Deselected,

≤ 0.3V or VIN > V

/2), undershoot: VIL(AC) > -2V (Pulse width less than t

CYC

(min.) within 200ms. During this time VIH < VDD and V

DDQ

– 0.3V,

All speeds 40 mA

DDQ

< VDD.

CYC

/2).

V

Document #: 38-05217 Rev. *C Page 8 of 17

CY7C1339F

Electrical Characteristics Over the Operating Range

(continued)

[9, 10]

Parameter Description Test Conditions Min. Max. Unit

I

SB3

Automatic CE
Power-down
Current—CMOS Inputs

V

= Max, Device Deselected, or

DD

V

≤ 0.3V or VIN > V

IN

f = f

MAX

= 1/t

CYC

DDQ

– 0.3V

4-ns cycle, 250 MHz 105 mA

4.4-ns cycle, 225 MHz 100 mA

5-ns cycle, 200 MHz 95 mA

6-ns cycle, 166 MHz 85 mA

7.5-ns cycle, 133 MHz 75 mA

10-ns cycle, 100 MHz 65 mA

I

SB4

Automatic CE
Power-down
Current—TTL Inputs

Shaded areas contain advance information.

Thermal Resistance

[11]

Parameter Description Test Conditions

Θ

JA

Θ

JC

Capacitance

Thermal Resistance
(Junction to Ambient)

Thermal Resistance
(Junction to Case)

[11]

Parameter Description Test Conditions

C

Input Capacitance TA = 25°C, f = 1 MHz,

IN

C

CLK

C

I/O

Clock Input Capacitance 5 5 pF

Input/Output Capacitance 5 7 pF

V

= Max, Device Deselected,

DD

V

≥ VIH or VIN ≤ VIL, f = 0

IN

Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA / JESD51.

V
V

= 3.3V.

DD
DDQ

All Speeds 45 mA

TQFP

Package

BGA

Package Unit

41.83 47.63 °C/W

9.99 11.71 °C/W

TQFP

Package

Package Unit

55pF

= 3.3V

BGA

AC Test Loads and Waveforms

3.3V I/O Test Load

OUTPUT

Z

= 50Ω

0

R

VT= 1.5V

L

3.3V

OUTPUT

= 50Ω

5pF

INCLUDING

JIG AND

SCOPE

(a)

2.5V I/O Test Load

OUTPUT

= 50Ω

Z

0

= 1.25V

V

T

R

L

(a)

Note:

11.Tested initially and after any design or process change that may affect these parameters

2.5V

OUTPUT

= 50Ω

5pF

INCLUDING

JIG AND

SCOPE

R = 317Ω

R = 351Ω

(b)

R = 1667Ω

R =1538Ω

(b)

V

DDQ

GND

V

DDQ

GND

≤ 1ns

≤ 1ns

ALL INPUT PULSES

10%

10%

90%

ALL INPUT PULSES

90%

90%

10%

≤ 1ns

(c)

90%

10%

≤ 1ns

(c)

Document #: 38-05217 Rev. *C Page 9 of 17

CY7C1339F

Switching Characteristics Over the Operating Range

[16, 17]

250 MHz 225 MHz 200 MHz 166 MHz 133 MHz 100 MHz

Parameter Description

t

POWER

VDD(Typical) to the first Access

Min. Max Min. Max Min. Max Min. Max Min. Max Min. Max

[12]

1 1 1 111ms

Clock

t

CYC

t

CH

t

CL

Clock Cycle Time 4.0 4.4 5.0 6.0 7.5 10 ns

Clock HIGH 1.7 2.0 2.0 2.5 3.0 3.5 ns

Clock LOW 1.7 2.0 2.0 2.5 3.0 3.5 ns

Output Times

t

CO

t

DOH

t

CLZ

t

CHZ

t

OEV

t

OELZ

t

OEHZ

Data Output Valid After CLK Rise 2.6 2.6 2.8 3.5 4.0 4.5 ns

Data Output Hold After CLK Rise 1.0 1.0 1.0 2.0 2.0 2.0 ns

Clock to Low-Z

Clock to High-Z

OE

LOW to Output Val id

LOW to Output Low-Z

OE

OE HIGH to Output High-Z

[13, 14, 15]

[13, 14, 15]

[13, 14, 15]

[13, 14, 15]

0 0 0 000ns

2.6 2.6 2.8 3.5 4.0 4.5 ns

2.6 2.6 2.8 3.5 4.5 4.5 ns

0 0 0 000ns

2.6 2.6 2.8 3.5 4.0 4.5 ns

Set-up Times

t

AS

t

ADS

Address Set-up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns

ADSC

,

ADSP

Set-up Before CLK

0.8 1.2 1.2 1.5 1.5 1.5 ns

Rise

t

ADVS

t

WES

t

DS

t

CES

ADV Set-up Before CLK Rise

GW, BWE, BW
CLK Rise

Set-up Before

[A:D]

Data Input Set-up Before CLK Rise 0.8 1.2 1.2 1.5 1.5 1.5 ns

Chip Enable Set-Up Before CLK
Rise

0.8 1.2 1.2 1.5 1.5 1.5 ns

0.8 1.2 1.2 1.5 1.5 1.5 ns

0.8 1.2 1.2 1.5 1.5 1.5 ns

Hold Times

t

AH

t

ADH

t

ADVH

t

WEH

t

DH

t

CEH

Shaded areas contain advance information.

Notes:

12. This part has a voltage regulator internally; t
can be initiated.

13. t

CHZ

14. At any given voltage and temperature, t
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions

15. This parameter is sampled and not 100% tested.

16. Timing reference level is 1.5V when V

17. Test conditions shown in (a) of AC Test Loads unless otherwise noted.

Address Hold After CLK Rise 0.4 0.5 0.5 0.5 0.5 0.5 ns

,

ADSP

Hold After CLK Rise

ADV

,

GW

BWE, BW

Rise

Hold After CLK Rise

ADSC

Hold After CLK

[A:D]

0.4 0.5 0.5 0.5 0.5 0.5 ns

0.4 0.5 0.5 0.5 0.5 0.5 ns

0.4 0.5 0.5 0.5 0.5 0.5 ns

Data Input Hold After CLK Rise 0.4 0.5 0.5 0.5 0.5 0.5 ns

Chip Enable Hold After CLK Rise 0.4 0.5 0.5 0.5 0.5 0.5 ns

is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation

POWER

, t

CLZ,tOELZ

, and t

are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

OEHZ

is less than t

OEHZ

= 3.3V and is 1.25V when V

DDQ

OELZ

and t

is less than t

CHZ

= 2.5V.

DDQ

to eliminate bus contention between SRAMs when sharing the same

CLZ

Unit

Document #: 38-05217 Rev. *C Page 10 of 17

Switching Waveforms

D

Read Cycle Timing

[18]

t

CYC

CY7C1339F

CLK

ADSP

ADSC

ADDRESS

GW, BWE,

BW[A:D]

CE

ADV

OE

ata Out (Q)

t

ADS

t

t

AS

CES

t

t

CL

CH

t

ADH

t

t

ADH

ADS

t

AH

A1

t

WES

t

CEH

High-Z

A2 A3

t

WEH

t

t

ADVH

ADVS

ADV
suspends
burst.

t

t

t

CLZ

t

CO

Single READ BURST READ

OEHZ

Q(A1)

OEV

t

OELZ

Q(A2)

t

DOH

t

CO

Q(A2 + 1)

Q(A2 + 2)

Q(A2 + 3)

Burst continued with
new base address

Deselect
cycle

t

CHZ

Q(A2 + 1)

Q(A2)

Burst wraps around
to its initial state

DON’T CARE

UNDEFINED

Notes:

18. On this diagram, when CE

19.

Full width write can be initiated by either GW

is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

LOW; or by GW HIGH, BWE LOW and BW

[A:D]

LOW.

Document #: 38-05217 Rev. *C Page 11 of 17

Switching Waveforms (continued)

D

Write Cycle Timing

[18, 19]

t

CYC

CY7C1339F

CLK

ADSP

ADSC

ADDRESS

BWE,

BW[A :D]

GW

ADV

t

t

CL

CH

t

t

ADH

ADS

t

t

ADH

ADS

t

t

AH

AS

A1

Byte write signals are
ignored for first cycle when
ADSP initiates burst

t

t

CEH

CES

CE

A2 A3

t

t

WEH

WES

ADV suspends burst

ADSC extends burst

t

ADS

t

ADH

t

WES

t

ADVS

t

WEH

t

ADVH

OE

Data In (D)

ata Out (Q)

t

t

DH

DS

High-Z

BURST READ BURST WRITE

t

OEHZ

D(A1)

Single WRITE

D(A2)

D(A2 + 1) D(A2 + 1)

DON’T CARE

UNDEFINED

D(A2 + 2)

D(A2 + 3)

D(A3)

D(A3 + 1)

Extended BURST WRITE

D(A3 + 2)

Document #: 38-05217 Rev. *C Page 12 of 17

Switching Waveforms (continued)

D

Read/Write Cycle Timing

[18, 20, 21]

t

CYC

CY7C1339F

CLK

ADSP

ADSC

ADDRESS

BWE,

BW[A:D]

CE

ADV

OE

Data In (D)

t

t

CL

CH

t

t

ADH

ADS

t

t

AH

AS

High-Z

A2

t

t

CEH

CES

t

CO

t

CLZ

t

OEHZ

t

WES

t

A3

DS

D(A3)

t

t

A1

A4 A5 A6

WEH

DH

t

OELZ

D(A5) D(A6)

ata Out (Q)

Note:

20.

The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by

21.

is HIGH.

GW

High-Z

Q(A2)Q(A1)

Single WRITE

DON’T CARE UNDEFINED

Q(A4) Q(A4+1) Q(A4+2)

BURST READBack-to-Back READs

.

or ADSC

ADSP

Q(A4+3)

Back-to-Back

WRITEs

Document #: 38-05217 Rev. *C Page 13 of 17

Switching Waveforms (continued)

A

ZZ Mode Timing

[22, 23]

CLK

t

ZZ

CY7C1339F

t

ZZREC

ZZ

I

SUPPLY

LL INPUTS

(except ZZ)

Outputs (Q)

t

ZZI

I

DDZZ

High-Z

t

RZZI

DESELECT or READ Only

DON’T CARE

Ordering Information

Speed

(MHz) Ordering Code

250 CY7C1339F-250AC A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) Commercial

CY7C1339F-250BGC BG119 119-ball BGA (14 x 22 x 2.4mm)

CY7C1339F-250AI A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) Industrial

CY7C1339F-250BGI BG119 119-ball BGA (14 x 22 x 2.4mm)

225

CY7C1339F-225AC A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) Commercial

CY7C1339F-225BGC BG119 119-ball BGA(14 x 22 x 2.4mm)

CY7C1339F-225AI A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) Industrial

CY7C1339F-225BGI BG119 119-ball BGA(14 x 22 x 2.4mm)

200

CY7C1339F-200AC A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) Commercial

CY7C1339F-200BGC BG119 119-ball BGA(14 x 22 x 2.4mm)

CY7C1339F-200AI A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Industrial

CY7C1339F-200BGI BG119 119-ball BGA(14 x 22 x 2.4mm)

166 CY7C1339F-166AC A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Commercial

CY7C1339F-166BGC BG119 119-ball BGA(14 x 22 x 2.4mm)

CY7C1339F-166AI A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Industrial

CY7C1339F-166BGI BG119 119-ball BGA(14 x 22 x 2.4mm)

133 CY7C1339F-133AC A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Commercial

CY7C1339F-133BGC BG119 119-ball BGA(14 x 22 x 2.4mm)

CY7C1339F-133AI A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Industrial

CY7C1339F-133BGI BG119 119-ball BGA(14 x 22 x 2.4mm)

Notes:

22. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.

23. DQs are in high-Z when exiting ZZ sleep mode

Package

Name Package Type

Operating

Range

Document #: 38-05217 Rev. *C Page 14 of 17

CY7C1339F

Ordering Information (continued)

Speed

(MHz) Ordering Code

100 CY7C1339F-100AC A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Commercial

CY7C1339F-100BGC BG119 119-ball BGA(14 x 22 x 2.4mm)

CY7C1339F-100AI A101 100-lead Thin Quad Flat Pack(14 x 20 x 1.4mm) Industrial

CY7C1339F-100BGI BG119 119-ball BGA(14 x 22 x 2.4mm)

Shaded areas contain advanced information.

Please contact your local Cypress sales representative for availability of these parts.

Package Diagrams

100-pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101

Package

Name Package Type

Operating

Range

51-85050-*A

51-85050-*A

Document #: 38-05217 Rev. *C Page 15 of 17

Package Diagrams (continued)

CY7C1339F

51-85115-*B

i486 is a trademark, and Intel and Pentium are registered trademarks, of Intel Corporation. PowerPC is a registered trademark
of IBM Corporation. All product and company names mentioned in this document may be trademarks of their respective holders.

Document #: 38-05217 Rev. *C Page 16 of 17

© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other righ ts. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.

CY7C1339F

Document History Page

Document Title: CY7C1339F 4-Mbit (128K x 32) Pipelined Sync SRAM
Document Number: 38-05217

REV. ECN NO. Issue Date

** 119284 01/06/03 HGK New Data Sheet

*A 123850 01/18/03 AJH Added power-up requirements to AC test loads and waveforms information

*B 200660 See ECN REF Final Data Sheet

*C 213342 See ECN VBL Update Ordering Info section: unshade active parts. -133AI & BGI

Orig. of
Change Description of Change

Document #: 38-05217 Rev. *C Page 17 of 17