Datasheet CXA3188N Datasheet (Sony)

Page 1

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E98128-TE

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Absolute Maximum Ratings (Ta=25 °C)

• Supply voltage VCC 6V

•Operating temperature Topr –20 to +70 °C

• Storage temperature Tstg –55 to +150 °C

• Allowable power dissipation (on board)

PD 760 mW

• Write current IW 22 mA

• WUS/SE pin input current

ISEH 15 mA

Operating Conditions

Supply voltage VCC 5±0.5 V

Description

The CXA3188N is a Read/Write Amplifier for the thin film head of hard disk drive and designed to handle up to 2 channel heads.

Features

• Operate on single +5 V power supply

• Low power consumption

Read : 90 mW Write : 115 mW + IW × 5 Idle : 8 mW

• Designed for two terminal thin-film or MIG heads.

• Read amplifier emitter follower output featuring

200 times gain(typ).

• Differential input capacitance for Read : 6pF (typ)

• Input noise : 0.47 nV / √ Hz (typ)

• Write current range : 10 to 20 mA

• Differential Head voltage swing : 9 Vp-p (typ)

• Differential P-ECL write data input.

• Built-in write unsafe detection circuit.

• Built-in Servo write function.

• Read data outputs are high impedance in write

mode.

• Unselected head voltage is high impedance.

• Self switching damping resistor 380 Ω.

• Built-in supply voltage monitor circuit prohibits

incorrect write during power on or abnormal

voltage.

Function

Read, Write and Write unsafe detection for HDD,

power supply ON/OFF detection.

Structure

Bipolar silicon monolithic IC

2ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive

16 pin SSOP (Plastic)

CXA3188N

For the availability of this product, please contact the sales office.

Page 2

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CXA3188N

RDY

RDX

WDX

WDY

XCS

R/W

H0X

H0Y

H1X

H1Y

GND

WUS/SE

MODE

CONTROL

WRITE

CURRENT

SOURCE

HEAD

SELECT

AMP

DRIVER

POWER ON/OFF

DETECTOR

WD BUF

AMP

WRITE

UNSAFE

DETECTOR

Block Diagram and Pin Configuration

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CXA3188N

Pin Description

No.

2 3 4 5

6 7

Symbol

GND

H0X H0Y H1X H1Y

VCC

WUS/SE

WDY WDX

Equivalent circuit

2k 2k

VCC

GND

100k

3 5

Description

Head. 2 channels provided.

5 V power supply.

Write unsafe detection output / Servo Enable signal input.

Differential P-ECL write data input.

VCC

GND

VCC

GND

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CXA3188N

No.

12 13

Symbol

RDY RDX

R/W

XCS

Equivalent circuit

VCC

GND

2.1V

180k

VCC

GND

VCC

GND

2.5V

VCC

GND

2.1V

180k

VCC

GND

100k

2.1V

Description

Head select signal input. At “Low” : Head0 at “High” : Head1

Read amplifier output.

A setting resistor for the write current value is connected between this pin and GND.

Read/Write signal input. At “High” : Read at “Low” : Write

Power save signal input At “High” : Power saving.

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CXA3188N

Electrical Characteristics (Unless otherwise specified, VCC=5 V, Ta=25 °C, Write current IW=20 mA)

Item

Current consumption for read

Current consumption for write

Current consumption for idle Digital input

“Low” input voltage Digital input “High” input voltage Digital input “Low” input current Digital input “High” input current

Write data input current

Write data input voltage range

WD input amplitude Power supply ON/OFF detector

threshold voltage Write current setting range

Write current voltage

Write current gain

Write current setting constant Write unsafe output

leak current Write unsafe output Low voltage

WUS/SE input current

WUS/SE High input voltage

Symbol

ICCR

ICCW

ICCI

VIL

VIH

IIL

IIH

IWD

VWDV

VWDA

VTH

VWC

IWUS

VWUSL

ISEH

VSEH

Test condition

IW=20 mA

“H” applied voltage: 5 V “L” applied voltage: 0 V

IW=AW • VWC/RWC When write current is “Iw[mA]”,

IW=KW/RWC. (RWC=3.3 kΩ)

Output current: 1 mA

Servo write Enabled

Min. Typ. Max. Unit.

11 18 25 mA 14 23 33

+IW +IW +IW

1.1 1.6 2.1 mA

0.8 V

2.0 V

–100 µA

100 µA

50 µA

VCC–2.5 VCC V

0.3 1 V

3.4 3.9 4.3 V

10 20 mAo-p

2.25 2.5 2.75 V

18 20 22 mA/mA

46 51 56

50 µA

0.5 V

5 14 mA

VCC VCC

+1.5 +1.6

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CXA3188N

Item

Read amplifier differential voltage gain

Frequency band width

Input referred noise voltage

Common mode rejection ratio

Supply voltage rejection ratio

Channel Separation

Read data output offset voltage for Read RDX, RDY common mode output voltage difference between modes RDX, RDY common mode output voltage for Read

Symbol

BW1

BW2

CMRR

PSRR

VOFF

Vdiff

VRD

Test condition

Input voltage:1 mVp-p,300 kHz load resistor: (RDX, RDY) 1 kΩ Frequency at which Av lower by 1dB Frequency at which Av lower by 3dB

Head impedance: 0 Ω Common input voltage:

100 mVp-p, 20 MHz Ripple voltage: 100 mVp-p, 20 MHz Selected head input voltage: 0 mVp-p Unselected head input voltage: 100 mVp-p, 20 MHz

CRD=0.1 µ

Min. Typ. Max. Unit.

170 200 230 V/V

35 60 MHz

75 120 MHz

0.47 0.65

√ Hz

50 dB

–300 300 mV

VCC

–2.3

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CXA3188N

Unless otherwise specified, VCC=5 V, Ta=25 °C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head inductance) =1 µH, RH (Head DC resistance value) =30 Ω

Item

Head differential voltage amplitude

Mode switching time Read to Write

Mode switching time Write to Read

Mode switching time Power saving to Read

Mode switching time safe to unsafe

Mode switching time unsafe to safe

Head switching time

Write current propagation delay time

Write current rise/fall time

Measurement conditions

Differential voltage between HX pin and HY pin at switching of Write current

TRW is the time required for Write current to turn to 90 % after Pin 15 changes from “High” to “Low”. TWR1 is the time required for the Read amplifier output∗ to turn to 90 % after Pin 15 changes from “Low” to “High”. TWR2 is the time required for Write current to decreases to 10 % after Pin 15 changes from “Low” to “High”. TIR is the time required for the Read amplifier output∗ to turn to 90 % after Pin 16 changes from “High” to “Low”. TSA1 is the time required for Pin 8 to turn “High” after the last transition of Write data when Write data is stopped in Write mode. TSA2 is the time required for Pin 8 to turn “Low” after the first transition of Write data in Write mode. TH is the time required for the Read amplifier output∗ to reach 90 % when the selected head switched in Read mode.

TPD is the time required for Write current to reach 90 % after the Write data falling edge.

TR is the time required for Write current to reach 90 % from 10 %; TF is the same time required to reach 10 % from 90 %. LH=0 µH, RH=0 Ω

Symbol

VSW

TRW

TWR1

TWR2

TIR

TSA1

TSA2

TPD

TR/TF

Min. Typ. Max. Unit.

9 Vp-p

0.13 0.3 µs

0.2 0.3 µs

0.1 0.3 µs

1 µs

1.0 2.3 3.0 µs

0.6 µs

2 7 ns

1 3 ns

∗Read amplifier output 100 mVp-p 10 MHz

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CXA3188N

Test Circuit 1

2.7k

a b a b

×100

×1

baa b a b

a b c

A A A A A

1µ1k1µ

AMP

LPF

to 15MHz

V V

a b c

ba ba

910111213141516

a b a b

0.1µ

ecba d ecba d

0.1µ 0.1µ

VCC 5V

a b

1µ

5.1k

1 2 3 4 5 6 7 8

Test Circuit 2

×1

1µ1k1µ

AMP

1µH

5V 1µ

5.1k

PG PG PG PG

10111213141516

1 2 3 4 5 6 7 8

RWC

2.7k

Fig. 1

Fig. 2

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CXA3188N

Timing Chart 1

50% 50%

TRW

10% 10%

TWR1

90%

WDX WDY

IWY

RDX RDY

90% 90%

R/W

50%

90%

TIR

TWR 2

Fig. 3

Fig. 4

Timing Chart 2

TPD

90% 90% 90%

10% 10%

TR TF

50%

TSA2

TSA1

50%

WDX WDY

IWY

WUS

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CXA3188N

Description of Functions

Read amplifier

This is a low noise amplifier for amplifying the signals from the heads with an emitter follower output.

The RDX and RDY are the outputs of the differential amplifier, the X side of the head input and RDX pin and

the Y side of the head inputs and RDY pin have the same polarity.

Write circuit

The Write data input to WDX pin and WDY pin passes through the buffer amp. It drives the Write switch

circuit which supplies the Write current to the heads.

The Write current flows into the X side when WDX is “Low” and WDY is “High”.

Mode control

The mode are set as shown Table 1 by R/W and WUS/SE.

Table 1. Mode selection

Servo write mode ∗∗

This mode allows for writing to multiple channels at once. In this mode the write driver will drive all channels

simultaneously.

To enable servo write mode follow these steps:

(1) Place the device in the Read mode. (2) Set WUS/SE to VSEH volts, or input ISEH to WUS/SE. (3) Initiate the write operation by setting R/W Low.

Write unsafe detection circuit

This circuit detects write errors.

In normal Write mode, the WUS output is low; in the conditions listed below, it is high.

• Head input is open (under the condition which RH=∞ and Write data frequency is ≤ 10 MHz)

• Head input is shorted to GND or VCC.

• Write data frequency is abnormally low.

• No Write current.

• In read mode.

• Supply voltage is abnormal (see “power supply ON/OFF detection”).

Power supply ON/OFF detection

This circuit monitors VCC to detect erroneous Writes. The error status is established when VCC falls below the

threshold voltage (VTH) of the power supply ON/OFF detector, in which case the recording and playback

functions are prohibited. When VCC rises above, VTH, the prohibition of these functions is released.

R/W

L L L

WUS/SE

X X

∗∗

Mode

Write

Read Servo Write Power Save

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CXA3188N

Application Circuit

1µ 1µ

1µ

5.1k

910111213141516

1 2 3 4 5 6 7 8

RWC

2.7k

LH LH

Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.

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CXA3188N

Notes on operation

• This device handles high frequency and high gain signals. Please note the following;

♦ Connect VCC decoupling capacitor of approximately 1000 pF near the device. ♦ Make the GND area as large as possible.

• The WC pin is a constant voltage pin. When noise affects this pin, it creates noise in Write current. Therefore, locate RWC as close to the device as possible.

• Write unsafe detection circuit This circuit uses the voltage waveforms of the head pins for detection.

♦ VFB must be more than 2 V. When VFB < 2 V, it is possible that Write unsafe detection maximum

frequency becomes more than 1 MHz.

♦ The normal operating area of write unsafe detection circuit is changed by head inductance, head DC

resistance, write current and other.

VTH

GND

Voltage waveform of head pins (HX, HY)

VTH=1.4VVFB

Wave form of write data

Page 13

∗TAS=T1–T2

Setting of Write current

Write current can be set with resistor RWC (kΩ) at Pin 14. IW=K/RWC (mA) Refer to Fig. 5.

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CXA3188N

Application Notes

Use the following characteristics for reference VCC=5 V, Ta=25 °C

Item

Write mode

Differential output capacitance Differential output resistance Differential input capacitance

Read mode Differential input resistance

Output resistance Unselected head differential current at write mode

Write current symmetry

Symbol

CO RD

CI RI

RRD

IUS

TASY

Condition

Between head input pins Between head input pins

f=5MHz RDX or RDY, f=5MHz LH=2 µH, RH=30 Ω IW=15 mA LH=0 µH, RH=0 Ω IW=15 mA

Min. Typ. Max. Unit

4.5 6 pF

250 380 490 Ω

6 10 pF

0.4 1.2 kΩ 45 60 Ω

0.2 mAp-p

–0.5 0.5 ns

Write current vs. RWC

Write current setting constant

vs. Write current

52.5

47.5

10m 15m 20m

Write current I

W (mA)

Write current setting constant kw

VCC=5V Ta=25°C

Write current I

(mA)

5 R

WC (kΩ)

10 20

IWX+IWY 50% 50% 50%

T1 T2

Fig. 5 Fig. 6

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CXA3188N

Normalized read amplifier voltage gain

vs. Ambient temperature

1.04

0.96

–25 0 75

Ambient temperature Ta (°C)

(Ta=25°C)

25 50

1.02

0.98

Normalized write current

vs. Supply voltage

1.04

0.96

4.0 4.5 6.0 Supply voltage V

CC (V)

=5V)

5.0 5.5

1.02

0.98

Normalized read amplifier voltage gain

vs. Supply voltage

1.04

0.96

4.0 4.5 6.0 Supply voltage V

CC (V)

(Ta=25°C)

5.0 5.5

1.02

0.98

Ta=25°C VCC=5V

Normalized write current

vs. Ambient temperature

1.02

0.98

–25 0 75

Ambient temperature Ta (°C)

(Ta=25°C)

25 50

VCC=5V RWC=2.4k

Ω

Ta=25°C RWC=24k

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CXA3188N

Power supply ON/OFF detector threshold

voltage vs. Ambient temperature

4.0

3.9

3.8

–25 0 75

Ambient temperature Ta (°C)

25 50

Power supply ON/OFF detector

Threshold Voltage (V)

OFF ON

ON OFF

→

Input referred noise voltage

vs. Ambient temperature

0.55

0.45

–25 0 75

Ambient temperature Ta (°C)

=5V) (mV/ Hz)

25 50

0.5

0.4

VCC=5V

Input referred noise voltage

vs. Supply voltage

0.49

0.47

0.45

Supply voltage V

CC (V)

(Ta=25°C) (mV/ Hz)

4.0 4.5 6.05.0 5.5

Ta=25°C

Page 16

Package Outline Unit : mm

CXA3188N

16PIN SSOP (PLASTIC)

∗5.0 ± 0.1

0.13

∗4.4 ± 0.1

0.65

0° to 10°

DETAIL A

+ 0.1

0.22 – 0.05

NOTE: Dimension “∗” does not include mold protrusion.

0.1 ± 0.1

0.5 ± 0.2

+ 0.05

0.15 – 0.02

+ 0.2

1.25 – 0.1

6.4 ± 0.2

0.1

SONY CODE EIAJ CODE JEDEC CODE

SSOP-16P-L01 SSOP016-P-0044

NOTE : PALLADIUM PLATING

This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).

PACKAGE STRUCTURE

PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE MASS

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EPOXY RESIN SOLDER / PALLADIUM

42/COPPER ALLOY

0.1g

PLATING