Datasheet CXA2525AN, CXA2525AM Datasheet (Sony)

– 1 –

CXA2525AM/AN

E96318C8Z

RF Amplifier for CD Player and CD-ROM

Description

The CXA2525AM/AN is an IC for RF signal

processing of CD player and CD-ROM.

Features

• Wide-band RF amplifier. (RF signal fc ≥ 12MHz)

• RF equalizer (T type)

• EFM time constant can be adjusted

(with switching function)

• APC (Automatic Power Control) function

• Power saving function

Functions

• RF summing amplifier

• RF equalizer

• Focus error amplifier

• Tracking error amplifier

• APC circuit

Absolute Maximum Ratings

• Supply voltage VCC 7V

•Storage temperature Tstg –65 to +150 °C

• Allowable power dissipation

PD 500 mW

Operating Conditions

• Supply voltage VCC – GND +3.0 to +5.5 V

• Operating temperature Topr –20 to +75 °C

Applications

• CD players

• CD-ROM drives

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

CXA2525AM

20 pin SOP (Plastic)

CXA2525AN

20 pin SSOP (Plastic)

For the availability of this product, please contact the sales office.

– 2 –

CXA2525AM/AN

Block Diagram

LD

PD

A

B

C

D

GND

E

F

VC

APC_ON

MODE

VCC

RF_M

BPF_SW

LPF_SW

RFO_1

RFO_2

FE

TE

2

3

4

5

6

7

8

9

10

1

11

12

13

14

15

16

17

18

19

20

BGR

VC BUFFER

40k

V

CC

25

1k

10k

V

CC

56k

10k

55k 56k10k

1.25V

APC

Standby

10k

10k 10k 10k 10k

64k 64k

174k

348k 348k

2k

VC

V

CC

RF Summing Amp

Focus Error Amp

RF Drive Amp

VC

11p

5p

320k

VC

112k

73.4k

112k

44k

Tracking Error Amp

Tracking Drive Amp

– 3 –

CXA2525AM/AN

Pin Description

No.

Symbol I/O Equivalent circuit Description

1

LD

O

APC amplifier output.

1k

1

10k

2

PD

I

APC amplifier input.

7

GND

Ground.

8k

55k

10k

2

3 4 5 6

A B C D

I I I I

Input of RF summing amplifier and focus error amplifier.

10k

10k 10k

3

4

5

6

124

64k

348k

– 4 –

CXA2525AM/AN

8 9

11

E F TE

I I

O

Tracking error amplifier input for Pins 8 and 9; tracking error drive output for Pin 11.

8

9

11

124

44k

112k

124

44k

112k

320k

73.4k

124

10

VC

O

(VCC + GND) / 2 DC voltage output.

120

25

10

12

FE

O

Focus error amplifier output for Pin 12.

12

348k

124

13

RFO_2

O

Buffer switch output which sets the RF signal time constant. OFF when Pin 19 is connected to VCC, ON when it is connected to GND.

124

13

14

14 17

RFO_1 RF_M

O

I

Non-inversion input of RF drive amplifier for Pin 17; RF signal output for Pin 14; resistance value connected between Pins 14 and 17 which determines the low frequency gain of RF drive amplifier.

14

17

124

2k

1k

Pin No.

Symbol I/O Equivalent circuit Description

– 5 –

CXA2525AM/AN

15

LPF_SW

O

Transistor switch output which sets the LPF cut-off frequency of RF amplifier. OFF when Pin 19 is connected to VCC, ON when it is connected to GND.

15

17

124

16

BPF_SW

O

Transistor switch output which sets the RF amplifier BPF boost. OFF when Pin 19 is connected to VCC, ON when it is connected to GND.

124

VC

16

19

MODE

I

Multiple-speed mode switching input.

VCC : High multiple-speed

mode

GND: Low multiple-speed

mode

124

19

50k

50k 30k

18

VCC

VCC.

20

APC_ON

I

APC amplifier ON/OFF switching. OFF when connecting to VCC; ON when connecting to GND.

20

100k

No.

Symbol I/O Equivalent circuit Description

– 6 –

CXA2525AM/AN

Current consumption

Standby current

Offset voltage

Voltage gain

Frequency

response

Frequency

response

Maximum output

amplitude H

Maximum output

amplitude L

Offset voltage

Voltage gain 1

Voltage gain 2

Voltage gain difference

Frequency

response 1

Frequency

response 2

Maximum output

amplitude H

Maximum output

amplitude L

0V

300mV

–

300mV

0V

300mV

Measure-

ment No.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

I

CC

IEE

Istb

V1-1

V1-2

G1-1

G1-2

G1-3

F1-1

F1-2

V1-2

V1-3

V2-1

G2-1

G2-2

G2-3

F2-1

F2-2

V2-2

V2-3

O

300mV

0V

2.0V

–2.0V

2.0V

–2.0V

2.0V

–2.0V

2.0V

–2.0V

2.0V

–2.0V

18

7

18

14

13

14

13

14

13

14

12

—

–12—–50

–50

16.5

–3

1.3

—

–50

17.7

–3

–4

1.9

—

7.4

–7.4

1.8

–10

100

20

20.3

—

2.3

–1.3

0

20.7

0

—

2.4

–2.3

12

—

3

120

300

23

23.3

—

–0.3

50

23.7

3

—

–1.9

mA

mV

dB

V

mV

dB

V

Pin DC current measurement

V1 = 100mVpp, f = 100kHz

V1 = 100mVpp, f = 12MHz

Difference for G1-1

V1 = 100mVpp, f = 4MHz

Difference for G1-2

DC voltage measurement

V1 = 100mVpp, f = 1kHz

G2-1 to G2-2

V1 = 100mVpp, f = 20kHz

Difference for G2-1

V1 = 100mVpp, f = 20kHz

Difference for G2-2

DC voltage measurement

Measurement item

Symbol

SW conditions

S1 S2 S3 S4 E1 E2 E3 E4

Bias conditions

Measure-

ment

point

Description of output waveform

and measurement method

Min. Typ. Max. Unit

RF amplifier

FE amplifier

Electrical Characteristics (Ta = 25°C, V

CC = 2.5V, GND = VC, VEE = –2.5V)

– 7 –

CXA2525AM/AN

Offset voltage

Voltage gain 1

Voltage gain 2

Voltage gain difference

Frequency

response 1

Frequency

response 2

Frequency

response 3

Frequency

response 4

Maximum output

amplitude H

Maximum output

amplitude L

Offset voltage 1

Offset voltage 2

Offset voltage 3

Offset voltage 4

Offset voltage 5

Offset voltage

11

1

10

–2.0V

2.0V

–2.0V

0V

69mV

123mV

177mV

0V

300mV

0V

2.0V

–2.0V

2.0V

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

V3-1

G3-1

G3-2

G3-3

F3-1

F3-2

F3-3

F3-4

V3-2

V3-3

V4-1

V4-2

V4-3

V4-4

V4-5

V5-1

O

–50

17.9

–3

–4

–3

1.9

—

–1.2

0.8

1.8

—

–0.1

0

20.9

0

—

–1.6

0.1

2.1

2.45

—

50

23.9

3

—

–1.9

–0.1

1.6

—

0

0.1

mV

dB

V

DC voltage measurement

V1 = 100mVpp, f = 1kHz

G3-1 to G3-2

V1 = 100mVpp, f = 20kHz

Difference for G3-1

V1 = 100mVpp, f = 20kHz

Difference for G3-2

V1 = 100mVpp, f = 200kHz

Difference for G3-1

V1 = 100mVpp, f = 200kHz

Difference for G3-2

DC voltage measurement

I1 = 0.8mADC,

DC voltage measurement

S1 S2 S3 S4 E1 E2 E3 E4

TE amplifierAPCVC

Measure-

ment No.

Measurement item

Symbol

SW conditions Bias conditions

Measure-

ment

point

Description of output waveform

and measurement method

Min. Typ. Max. Unit

– 8 –

CXA2525AM/AN

LD

PD

A

B

C

D

GND

E

F

VC

MODE

VCC

RF_M

BPF_SW

LPF_SW

RFO_1

RFO_2

FE

TE

BGR

VC

BUFFER

40k

V

CC

25

1k

10k

VCC

56k

10k

55k

56k

10k

APC

Standby

10k

64k

174k

348k

2k

V

CC

RF

Summing

Amp

Focus

Error Amp

RF Drive

Amp

11p

5p

320k

112k

73.4k

112k

44k

Tracking

Error Amp

Tracking

Drive Amp

10k

3.9k

1k

E3

E4

VCC

VEE

S1

S2

S3

S4

V1

E1

33µ

3µ

V

EE

VCC

2

3

4

5

6

7

8

9

10

1

11

12

13

14

15

16

17

18

19

20

I1

E2

APC_ON

150p

510

1p

1.25V

Electrical Characteristics Measurement Circuit

– 9 –

CXA2525AM/AN

LD

PD

A

B

C

D

GND

E

F

VC

MODE

V

CC

RF_M

BPF_SW

LPF_SW

RFO_1

RFO_2

FE

TE

3.9k

1p

68p

390

1k

MODE

VCC

100µ

100

500

B IN

A IN

D IN

C IN

F IN

E IN

VC

22

10µ

1µ

1000p

Focus Error Out

Tracking Error Out

RF Out

4700p

BGR

VC

BUFFER

40k

V

CC

25

1k

10k

V

CC

56k

10k

55k

56k

10k

APC

Standby

10k

64k

174k

348k

2k

VC

V

CC

RF

Summing

Amp

Focus

Error Amp

RF Drive

Amp

VC

11p

5p

320k

VC

112k

73.4k

112k

44k

Tracking

Error Amp

Tracking

Drive Amp

2

3

4

5

6

7

8

9

10

1

11

12

13

14

15

16

17

18

19

20

13p

APC_ON

VC

30k

1.25V

Application Circuit (Double-/sextuple-speed switching)

Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for

any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.

– 10 –

CXA2525AM/AN

Note on Operation

The RF AC maximum output amplitude is 1.3 Vpp when Pin 13 and 14 are capacitor-coupled shown in Application Circuit.

Description of Operation

RF Amplifier

The signal currents from the photodiodes A, B, C and D are I-V converted, and input to Pins 3, 4, 5 and 6. These signals are added at the RF summing amplifier and inverted at the RF drive amplifier and then output to Pin 14.

The low frequency component of RFO output voltage is as follows:

VRFO = × × (A + B + C + D)

= 2.45 × (A + B + C + D)

Focus Error Amplifier

The operation of (B + D) – (A + C) is performed and the resulting signal is output to Pin 12.

The low frequency component of FE output voltage is as follows:

VFE = × (B + D – A – C)

= 5.43 × (B + D – A + C)

A B C D

I-V

10k

2k

RFO

RF Drive Amp

VC

RF Summing Amp

VC

RF_ M

3

4

5

6

17

14

1k163.9k

390

4.9k

1p

13p68p

15

LPF_SW

BPF_SW

10k 10k

4.9k 2k

A B C D

I-V

64k

348k

Focus Error Amp

348k

15P

FE

15P

VC

174k

3 4 5 6

12

348k

64k

– 11 –

CXA2525AM/AN

Tracking Error Amplifier

Each signal current from the photodiodes E and F is I-V converted and input to Pins 8 and 9. These signals undergo operational amplification at the tracking error amplifier and tracking drive amplifier, and are output to Pin 12.

The low frequency component of TE output voltage is as follows:

VTE = × × (F – E)

= 11.1 × (F – E)

Center Voltage Generation Circuit

The center voltage of VR = (VCC + GND) is supplied. The maximum current is approximately ±3mA.

APC Circuit

When the laser diode is driven with constant current, the optical output possesses large negative temperature characteristics. Therefore, the current must be controlled with the monitor photodiode to ensure the output remains constant. When APC_ON pin is connected to GND, APC is ON; connected to VCC, it is OFF.

E

F

I-V

44k

320k

5P

TE

73.4k

VC

112k

I-V

44k 112k

8

9

12

11P

112k

44k

320k

73.4k

VR

25

VC

40k

Vc Buffer

Vcc

10

PD

10k

55k 56k

10k

22

100

500

100µ

10µH

1µ

LD

1k

56k

V

CC

10k

1

2

1.25V

– 12 –

CXA2525AM/AN

Example of Representative Characteristics

MODE = LOW MODE = HIGH

30

20

10

0

100k 1M 10M 100M

FREQ. [Hz]

GAIN [dB]

RFO_1 Frequency Response (W/O EQ)

30

20

10

0

100k 1M 10M 100M

FREQ. [Hz]

GAIN [dB]

RFO_2 Frequency Response (W/O EQ)

30

20

10

0

1k 10k 100k 1M

FREQ. [Hz]

GAIN [dB]

TE_Out Frequency Response

30

20

10

0

100k 1M 10M 100M

FREQ. [Hz]

GAIN [dB]

RF_Out Frequency Response (T-EQ)

∗

30

20

10

0

100 1k 10k 100k

FREQ. [Hz]

GAIN [dB]

FE_Out Frequency Response

2.5

2.0

1.5

1.0

0 100 200 300

PD [mV]

LD [V]

APC Characteristics

0.5

0

–0.5

–1.0

–1.5

–2.0

∗

T-EQ As shown in Application Circuit

– 13 –

CXA2525AM/AN

SONY CODE EIAJ CODE

JEDEC CODE

SOP-20P-L01 ∗SOP020-P-0300-A

PACKAGE STRUCTURE

PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL

PACKAGE WEIGHT

COPPER ALLOY

SOLDER PLATING

EPOXY / PHENOL RESIN

0.3g

20PIN SOP (PLASTIC) 300mil

12.45 – 0.1

+ 0.4

20

11

0.45 ± 0.1

1.27

10

1

5.3 – 0.1

+ 0.3

7.9 ± 0.4

6.9

0.2 – 0.05

+ 0.1

0.5 ± 0.2

0.1 – 0.05

+ 0.2

1.85 – 0.15

+ 0.4

0.15

± 0.12

M

CXA2525AN

20PIN SSOP (PLASTIC)

SONY CODE EIAJ CODE JEDEC CODE

PACKAGE STRUCTURE

PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT

EPOXY RESIN SOLDER / PALLADIUM

COPPER / 42 ALLOY

0.1g

SSOP-20P-L01 SSOP020-P-0044

0.1 ± 0.1

0.5 ± 0.2

0° to 10°

DETAIL A

PLATING

∗6.5 ± 0.1

∗4.4 ± 0.1

0.22 – 0.05

+ 0.1

0.65 ± 0.12

20

11

10

1

A

0.1

+ 0.05

1.25 – 0.1

+ 0.2

0.15 – 0.02

6.4 ± 0.2

NOTE: Dimension “∗” does not include mold protrusion.

Package Outline Unit: mm

CXA2525AM

NOTE : PALLADIUM PLATING

This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).