Datasheet CXA2515AN, CXA2515AM Datasheet (Sony)

– 1 –

CXA2515AM/AN

E96317D8Y

RF Amplifier for CD Player and CD-ROM

Description

The CXA2515AM/AN is an IC for RF signal

processing of CD player and CD-ROM.

Features

• Wide-band RF amplifier. (RF signal fc ≥ 12MHz)

• RF equalizer (T type)

• EFM time constant can be adjusted

(with switching function)

• APC (Automatic Power Control) function

• Power saving function

• Supports laser coupler

Functions

• RF summing amplifier

• RF equalizer

• Focus error amplifier

• Tracking error amplifier

• APC circuit

Absolute Maximum Ratings

• Supply voltage VCC 7V

•Storage temperature Tstg –65 to +150 °C

• Allowable power dissipation

PD 500 mW

Operating Conditions

• Supply voltage VCC – GND+3.0 to +5.5 V

• Operating temperature Topr –20 to +75 °C

Applications

• CD players

• CD-ROM drives

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

CXA2515AM

20 pin SOP (Plastic)

CXA2515AN

20 pin SSOP (Plastic)

For the availability of this product, please contact the sales office.

– 2 –

CXA2515AM/AN

Block Diagram

2

3

4

5

6

7

8

9

10

1

11

12

13

14

15

16

17

18

19

20

BGR

VC
BUFFER

40k

40k

V

CC

25

1k

10k

V

CC

56k

10k

55k 56k10k

APC

Standby

20k

10k
10k

32k
32k

174k

348k
348k

2k

VC

V

CC

RF
Summing
Amp

Focus
Error Amp

RF Drive
Amp

VC

11p

5p

320k

VC

VC

73.4k

Tracking
Error Amp

Tracking
Drive Amp

LD

PD

NC

PD1

PD2

VC

GND

E

F

TE1

APC_ON

MODE

V

CC

RF_M

BPF_SW

LPF_SW

RFO_1

RFO_2

FE

TE

1.25V

– 3 –

CXA2515AM/AN

Pin Description

Pin
No.

Symbol I/O Equivalent circuit Description

1

LD

O

APC amplifier output.

1k

1

10k

2

PD

I

APC amplifier input.

7

GND

Ground.

3

NC

No connection.

8k

55k

10k

2

4
5

PD1
PD2

I
I

Input of RF summing
amplifier and focus error
amplifier.

20k

10k

10k

4

5

124

124

32k

32k

174k

348k

348k

VC VC

6

VC

O

(VCC + GND) / 2 DC voltage
output.

120

120

25

6

– 4 –

CXA2515AM/AN

8

9
10
11

E
F
TE1
TE

I

I
O
O

Tracking error amplifier input
for Pins 8 and 9;
tracking error amplifier output
for Pin 10;
tracking error drive output for
Pin 11.

8

9

11

124 124

320k

73.4k

124

124

10

12

FE

O

Focus error amplifier output
for Pin 12.

12

348k

348k 124

13

RFO_2

O

Buffer switch output which
sets the RF signal time
constant.
OFF when Pin 19 is
connected to VCC, ON when
it is connected to GND.

124

13

14

14
17

RFO_1
RF_M

O

I

Non-inversion input of RF
drive amplifier for Pin 17;
RF signal output for Pin 14;
resistance value connected
between Pins 14 and 17
which determines the low
frequency gain of RF drive
amplifier.

14

17

124

2k

1k

Pin
No.

Symbol I/O Equivalent circuit Description

15

LPF_SW

O

Transistor switch output
which sets the LPF cut-off
frequency of RF amplifier.
OFF when Pin 19 is
connected to VCC, ON when
it is connected to GND.

15

17

124

124

– 5 –

CXA2515AM/AN

16

BPF_SW

O

Transistor switch output
which sets the RF amplifier
BPF boost.
OFF when Pin 19 is
connected to VCC, ON when
it is connected to GND.

124

VC

16

19

MODE

I

Multiple-speed mode
switching input.

VCC : High multiple-speed

mode

GND: Low multiple-speed

mode

124

19

50k

50k 30k

18

VCC

VCC.

20

APC_ON

I

APC amplifier ON/OFF
switching.
OFF when connecting to VCC;
ON when connecting to GND.

20

100k

Pin

No.

Symbol I/O Equivalent circuit Description

– 6 –

CXA2515AM/AN

Current consumption

Current consumption

Standby current

Offset voltage

Offset voltage

Voltage gain

Voltage gain

Voltage gain

Frequency

response

Frequency

response

Maximum output

amplitude H

Maximum output

amplitude L

Offset voltage

Voltage gain 1

Voltage gain 2

Voltage gain difference

Frequency

response 1

Frequency

response 2

Maximum output

amplitude H

Maximum output

amplitude L

0V

300mV

–

300mV

0V

300mV

300mV

Measure-

ment No.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

I

CC

IEE

Istb

V1-1

V1-2

G1-1

G1-2

G1-3

F1-1

F1-2

V1-2

V1-3

V2-1

G2-1

G2-2

G2-3

F2-1

F2-2

V2-2

V2-3

O

O

O

O

O

O

O

O

O

O

O

O

O

O

O

O

O

O

O

O

300mV

300mV

300mV

0V

2.0V

–2.0V

2.0V

–2.0V

–2.0V

2.0V

–2.0V

2.0V

–2.0V

2.0V

–2.0V

18

7

18

14

13

14

14

13

14

13

14

12

—

–12—–50

–50

16.5

16.5

16.5

–3

–3

1.3

—

–50

17.7

17.7

–3

–4

–4

1.9

—

6.3

–6.3

1.45

25

100

20

20

20.3

—

—

2.3

–1.3

0

20.7

20.7

0

—

—

2.4

–2.3

12

—

3

150

300

23

23

23.3

—

—

—

–0.3

50

23.7

23.7

3

—

—

—

–1.9

mA

mA

mA

mV

mV

dB

dB

dB

dB

dB

V

V

mV

dB

dB

dB

dB

dB

V

V

Pin DC current measurement

Pin DC current measurement

Pin DC current measurement

Pin DC current measurement

Pin DC current measurement

V1 = 100mVpp, f = 100kHz

V1 = 100mVpp, f = 100kHz

V1 = 100mVpp, f = 100kHz

V1 = 100mVpp, f = 12MHz

Difference for G1-1

V1 = 100mVpp, f = 4MHz

Difference for G1-2

DC voltage measurement

DC voltage measurement

DC voltage measurement

V1 = 100mVpp, f = 1kHz

V1 = 100mVpp, f = 1kHz

G2-1 to G2-2

V1 = 100mVpp, f = 20kHz

Difference for G2-1

V1 = 100mVpp, f = 20kHz

Difference for G2-2

DC voltage measurement

DC voltage measurement

Measurement item

Symbol

SW conditions

S1 S2 S3 S4 E1 E2 E3 E4

Bias conditions

Measure-

ment

point

Description of output waveform

and measurement method

Min. Typ. Max. Unit

RF amplifier

FE amplifier

Electrical Characteristics (Ta = 25°C, V

CC = 2.5V, GND = VC, VEE = –2.5V)

– 7 –

CXA2515AM/AN

Offset voltage

Voltage gain 1

Voltage gain 2

Voltage gain difference

Frequency

response 1

Frequency

response 2

Frequency

response 3

Frequency

response 4

Maximum output

amplitude H

Maximum output

amplitude L

Offset voltage 1

Offset voltage 2

Offset voltage 3

Offset voltage 4

Offset voltage 5

Offset voltage

11

1

6

–2.0V

2.0V

–2.0V

0V

69mV

123mV

177mV

0V

0V

300mV

300mV

0V

2.0V

–2.0V

–2.0V

2.0V

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

V3-1

G3-1

G3-2

G3-3

F3-1

F3-2

F3-3

F3-4

V3-2

V3-3

V4-1

V4-2

V4-3

V4-4

V4-5

V5-1

O

O

O

O

O

O

O

O

–50

17.9

17.9

–3

–4

–4

–4

–4

1.9

—

—

–1.2

0.8

1.8

—

–0.1

0

20.9

20.9

0

—

—

—

—

—

—

–1.6

0.1

2.1

2.45

—

—

50

23.9

23.9

3

—

—

—

—

—

–1.9

–0.1

1.6

—

—

0

0.1

mV

dB

dB

dB

dB

dB

dB

dB

V

V

V

V

V

V

V

V

DC voltage measurement

V1 = 100mVpp, f = 1kHz

V1 = 100mVpp, f = 1kHz

G3-1 to G3-2

V1 = 100mVpp, f = 20kHz

Difference for G3-1

V1 = 100mVpp, f = 20kHz

Difference for G3-2

V1 = 100mVpp, f = 200kHz

Difference for G3-1

V1 = 100mVpp, f = 200kHz

Difference for G3-2

DC voltage measurement

DC voltage measurement

DC voltage measurement

DC voltage measurement

DC voltage measurement

DC voltage measurement

I1 = 0.8mADC,

DC voltage measurement

DC voltage measurement

S1 S2 S3 S4 E1 E2 E3 E4

TE amplifierAPCVC

Measure-

ment No.

Measurement item

Symbol

SW conditions Bias conditions

Measure-

ment

point

Description of output waveform

and measurement method

Min. Typ. Max. Unit

– 8 –

CXA2515AM/AN

33µ

33µ

V

EE

LD

PD

NC

PD1

PD2

VC

GND

E

F

MODE

VCC

RF_M

BPF_SW

LPF_SW

RFO_1

RFO_2

FE

TE

10k

10k

10k

10k

3.9k

1k

E3

E4

VCC

VEE

VEE

S2

S1

S3

S4

V1

E1

I1

E2

2

3

4

5

6

7

8

9

10

1

11

12

13

14

15

16

17

18

19

20

BGR

VC

BUFFER

40k

40k

V

CC

25

1k

10k

V

CC

56k

10k

55k 56k10k

APC

Standby

20k

10k

10k

32k

32k

174k

348k

348k

2k

V

CC

RF

Summing

Amp

Focus

Error Amp

RF Drive

Amp

11p

5p

320k73.4k

Tracking

Error Amp

Tracking

Drive Amp

43k

110k

110k

43k

TE1

APC_ON

VCC

150p

510

1p

1.25V

Electrical Characteristics Measurement Circuit

– 9 –

CXA2515AM/AN

LD

PD

NC

PD1

PD2

VC

GND

E

F

MODE

V

CC

RF_M

BPF_SW

LPF_SW

RFO_1

RFO_2

FE

TE

3.9k

1p

68p 390

1k

MODE

V

CC

100µ

100

500

PD1 IN

PD2 IN

F IN

E IN

22

10µ

1µ

1000p

Focus Error Out

Tracking Error Out

RF OUT

4700p

2

3

4

5

6

7

8

9

10

1

11

12

13

14

15

16

17

18

19

20

BGR

VC

BUFFER

40k

40k

V

CC

25

1k

10k

V

CC

56k

10k

55k 56k10k

APC

Standby

20k

10k

10k

32k

32k

174k

348k

348k

2k

VC

V

CC

RF

Summing

Amp

Focus

Error Amp

RF Drive

Amp

VC

11p

5p

320k

VC

VC

73.4k

Tracking

Error Amp

Tracking

Drive Amp

43k

110k

VC

110k

43k

TE1

APC_ON

13p

VC

30k

1.25V

Application Circuit (Double-/sextuple-speed switching)

Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for

any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.

– 10 –

CXA2515AM/AN

Note on Operation

The RF AC maximum output amplitude is 1.3Vpp when Pin 13 and 14 are capacitor-coupled shown in
Application Circuit.

Description of Operation

RF Amplifier

The signal currents from the photodiodes A, B, C and D become PD1 = A + C and PD2 = B + D by I-V converting,
and they are input to Pins 4 and 5. These signals are added at the RF summing amplifier and inverted at the
RF drive amplifier and then output to Pin 14.

The low frequency component of RFO output voltage is as follows:

VRFO = × × (PD1 + PD2)

= 4.9 × (PD1 + PD2)

Focus Error Amplifier

The operation of (PD2 – PD1) is performed and the resulting signal is output to Pin 12.

The low frequency component of FE output voltage is as follows:

VFE = × (PD2 – PD1)

= 10.9 × (PD2 – PD1)

PD1
PD2

I-V

I-V

10k

10k

20k

2k

1k

RFO

RF Drive Amp

VC

RF
Summing Amp

VC

RF_ M

4
5

17

14

C

A

B

D

15

16

3.9k

390

4.9k

1p

13p

68p

LPF_SW BPF_SW

20k
10k

4.9k
2k

32k

32k

348k

Focus
Error Amp

348k

15P

FE

15P

VC

174k

4
5

12

PD2

PD1

I-V

I-V

348k

32k

– 11 –

CXA2515AM/AN

Tracking Error Amplifier

The signal current from the photodiode F is I-V converted and input to Pin 9 via an input resistor. The signal
current from the photodiode E is I-V converted, and input to Pin 8 after its gain is adjusted by the volume.
These signals undergo operational amplification at the tracking error amplifier and tracking drive amplifier, and
are output to Pin 12.

The low frequency component of TE output voltage is as follows:

VTE = × × (F – E)

= 11.1 × (F – E)

Center Voltage Generation Circuit

The center voltage of VR = (VCC + GND) is supplied.
The maximum current is approximately ±3mA.

APC Circuit

When the laser diode is driven with constant current, the optical output possesses large negative temperature
characteristics. Therefore, the current must be controlled with the monitor photodiode to ensure the output
remains constant. When APC_ON pin is connected to GND, APC is ON; connected to VCC, it is OFF.

E

F

I-V

320k

5P

TE

73.4k

VC

I-V

43k

8

9

12

10

100k

62k

VC

110k

TE1

11P

110k

43k

320k

73.4k

VR

25

VC

40k

40k

Vc Buffer

Vcc

Vcc

6

PD

8k

10k

55k

56k

10k

22

100

500

100µ

10µH

1µ

LD

1k

56k

V

CC

10k

1

2

1.25V

– 12 –

CXA2515AM/AN

Example of Representative Characteristics

MODE = LOW
MODE = HIGH

MODE = LOW
MODE = HIGH

30

20

10

0

100k 1M 10M 100M

FREQ. [Hz]

GAIN [dB]

RFO_1 Frequency Response (W/O EQ)

30

20

10

0

100k 1M 10M 100M

FREQ. [Hz]

GAIN [dB]

RFO_2 Frequency Response (W/O EQ)

30

20

10

0

1k 10k 100k 1M

FREQ. [Hz]

GAIN [dB]

TE_Out Frequency Response

30

20

10

0

100k 1M 10M 100M

FREQ. [Hz]

GAIN [dB]

RF_Out Frequency Response (T-EQ)

∗

30

20

10

0

100 1k 10k 100k

FREQ. [Hz]

GAIN [dB]

FE_Out Frequency Response

2.5

2.0

1.5

1.0

0 100 200 300

PD [mV]

LD [V]

APC Characteristics

0.5

0

–0.5

–1.0

–1.5

–2.0

∗

T-EQ As shown in Application Circuit

– 13 –

CXA2515AM/AN

Package Outline Unit: mm

CXA2515AM

SONY CODE
EIAJ CODE

JEDEC CODE

SOP-20P-L01
∗SOP020-P-0300-A

PACKAGE STRUCTURE

PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT

COPPER ALLOY

SOLDER PLATING

EPOXY / PHENOL RESIN

0.3g

20PIN SOP (PLASTIC) 300mil

12.45 – 0.1

+ 0.4

20

11

0.45 ± 0.1

1.27

10

1

5.3 – 0.1

+ 0.3

7.9 ± 0.4

6.9

0.2 – 0.05

+ 0.1

0.5 ± 0.2

0.1 – 0.05

+ 0.2

1.85 – 0.15

+ 0.4

0.15

± 0.12

M

CXA2515AN

20PIN SSOP (PLASTIC)

SONY CODE
EIAJ CODE
JEDEC CODE

PACKAGE STRUCTURE

PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS

EPOXY RESIN
SOLDER / PALLADIUM

42/COPPER ALLOY

0.1g

SSOP-20P-L01
SSOP020-P-0044

PLATING

0.1 ± 0.1

0.5 ± 0.2

0° to 10°

DETAIL A

NOTE: Dimension “∗” does not include mold protrusion.

b=0.22 – 0.05

+ 0.1

0.15 – 0.02

+ 0.05

(0.22)

(0.15)

0.15 – 0.01

DETAIL B : SOLDER DETAIL B : PALLADIUM

+ 0.03

b=0.22 ± 0.03

∗6.5 ± 0.1

∗4.4 ± 0.1

0.65

20

11

10

1

A

0.1

1.25 – 0.1

+ 0.2

6.4 ± 0.2

0.13

M

b

NOTE : PALLADIUM PLATING

This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame).