Page 1
Features
Combines MMBT4403 type transistor with 2N7002
·
type MOSFET
Small Surface Mount Package
·
NPN/P-Channel Complement Available: CTA2N1P
·
Mechanical Data
Case: SOT-363, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
NEW PRODUCT
Method 208
Case material - UL Flammability Rating
·
Classification 94V-0
Terminal Connections: See Diagram
·
Marking: A80
·
· Weight: 0.006 grams (approx.)
Q1
CTA2P1N
COMPLEX TRANSISTOR ARRAY
SOT-363
A
C
A80
H
K
J
G
C
Q1
S
Q2
Q2
B
L
FD
Dim Min Max
A
B
C
D
F
H
J
M
K
L
M
All Dimensions in mm
0.10 0.30
1.15 1.35
2.00 2.20
0.65 Nominal
0.30 0.40
1.80 2.20
¾ 0.10
0.90 1.00
0.25 0.40
0.10 0.25
Q2
E
B
Q1
Maximum Ratings, Total Device
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
D
Q1
Q2
@ TA= 25°C unless otherwise specified
P
d
R
qJA
T
j,TSTG
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
V
CBO
V
CEO
V
EBO
I
C
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage RGS£ 1.0MW
Gate-Source Voltage Continuous
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
Pulsed
V
DSS
V
DGR
V
GSS
I
D
150
833 °C/W
-55 to +150 °C
@ TA= 25°C unless otherwise specified
-40 V
-40 V
-5.0 V
-600 mA
@ TA= 25°C unless otherwise specified
60 V
60 V
±20
±40
115
73
800
mW
V
mA
DS30296 Rev. 2 - 2 1 of 4 CTA2P1N
Page 2
Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 2)
NEW PRODUCT
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
h
V
CE(SAT)
V
BE(SAT)
C
C
h
h
h
h
-40 ¾ V
-40 ¾ V
-5.0 ¾ V
¾ -100 nA
BL
FE
cb
eb
ie
re
fe
oe
f
T
t
d
t
r
t
s
t
f
¾ -100 nA
30
60
100
100
20
¾
-0.75
¾
¾
¾
¾
300
¾
-0.40
-0.75
-0.95
-1.30
¾ 8.5 pF
¾ 30 pF
1.5 15 kW
0.1 8.0 x 10
60 500 ¾
1.0 100 mS
200 ¾ MHz
¾ 15 ns
¾ 20 ns
¾ 225 ns
¾ 30 ns
I
= -100mA, IE= 0
C
= -1.0mA, IB= 0
I
C
= -100mA, IC= 0
I
E
= -35V, V
V
CE
= -35V, V
V
CE
I
= -100µA, VCE= -1.0V
C
I
= -1.0mA, VCE= -1.0V
C
IC= -10mA, VCE= -1.0V
¾
I
= -150mA, VCE= -2.0V
C
I
= -500mA, VCE= -2.0V
C
= -150mA, IB= -15mA
I
C
V
I
= -500mA, IB= -50mA
C
= -150mA, IB= -15mA
I
C
V
I
= -500mA, IB= -50mA
C
= -10V, f = 1.0MHz, IE= 0
V
CB
= -0.5V, f = 1.0MHz, IC= 0
V
EB
-4
V
= -10V, IC= -1.0mA,
CE
f = 1.0kHz
= -10V, IC= -20mA,
V
CE
f = 100MHz
= -30V, IC= -150mA,
V
CC
V
BE(off)
= -30V, IC= -150mA,
V
CC
IB1= IB2= -15mA
= -0.4V
EB(OFF)
= -0.4V
EB(OFF)
= -2.0V, IB1= -15mA
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC= 25°C
@ T
= 125°C
C
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
60 70 ¾ V
¾¾
1.0
500
µA
¾¾±10 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj= 25°C
@T
= 125°C
j
On-State Drain Current
Forward Transconductance
V
GS(th)
R
DS (ON)
I
D(ON)
g
1.0 ¾ 2.0 V
¾
3.2
4.4
0.5 1.0 ¾ A
FS
80 ¾¾mS
7.5
13.5
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
¾ 22 50 pF
¾ 11 25 pF
¾ 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t
D(ON)
t
D(OFF)
¾ 7.0 20 ns
¾ 11 20 ns
Note: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
= 0V, ID= 10mA
V
GS
= 60V, VGS= 0V
V
DS
= ±20V, VDS= 0V
V
GS
V
DS=VGS
V
GS
, ID=-250mA
= 5.0V, ID= 0.05A
VGS= 10V, ID= 0.5A
= 10V, VDS= 7.5V
V
GS
=10V, ID= 0.2A
V
DS
= 25V, VGS= 0V
V
DS
f = 1.0MHz
V
= 30V, ID= 0.2A,
DD
R
= 150W,V
L
R
GEN
= 25W
GEN
= 10V,
DS30296 Rev. 2 - 2 2 of 4 CTA2P1N
Page 3
Ordering Information
O
O
O
(Note 3)
Device
CTA2P1N-7
Packaging Shipping
SOT-363 3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NEW PRODUCT
Date Code Key
Year 1998 1999 2000 2001 2002
Code
Month Jan Feb March Apr May Jun Jul
Code
A80
JKLM N
1234 567
30
20
YM
2003 2004
OP
Aug Sep Oct Nov Dec
89 OND
Cibo
10
5.0
CAPACITANCE (pF)
1.0
-0.1
Fig. 1 Typical Capacitance (MMBT4403)
1.6
1.4
TAGE (V)
L
1.2
1.0
0.8
R-EMITTER V
0.6
IC=1mA
IC = 10mA
-1.0
REVERSE VOLTS (V)
IC = 100mA
IC = 30mA
IC = 300mA
-10
Cobo
-30
LLECT
0.4
0.2
VCE C
0
0.001 0.01
0.1
IB BASE CURRENT (mA)
Fig. 2 Typical Collector Saturation Region (MMBT4403)
1
10 100
DS30296 Rev. 2 - 2 3 of 4 CTA2P1N
Page 4
g
)
10
)
O
)
O
1.0
g
)
V = 10V
GS
0.8
0.6
2.0/1.0V
0.4
NEW PRODUCT
0.2
D
I , DRAIN-SOURCE CURRENT (A)
0
01 2
3.0
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
3
V , DRAIN-SOURCE VOLTAGE (V)
DS
. 3 On-Region Characteristics(2N7002
Fi
7
T = 25 Cj°
6
W
5
V = 5.0V
5.5V
GS
4
5.0V
RMALIZED
3
DS(ON)
R,N
2
1
DRAIN-SOURCE ON-RESISTANCE ( )
V = 10V
GS
0
4
5
0 0.2
0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 4 On-Resistance vs Drain Current (2N7002)
6
W
()
2.5
2.0
DS(ON)
R , STATIC
1.5
DRAIN-SOURCE ON-RESISTANCE
1.0
-55 -30 -5 20 45
T , JUNCTION TEMPERATURE ( C)
j
70
Fig. 5 On-Resistance vs Junction Temperature (2N7002
V = 10V
DS
9
8
7
6
T = +125°C
A
5
V = 10V,
GS
I
= 200mA
D
95 120 145
°
T = +75°C
A
W
()
5
4
RMALIZED
R,N
DS(ON)
3
2
1
DRAIN-SOURCE ON-RESISTANCE
0
Fig. 6 On-Resistance vs. Gate-Source Voltage (2N7002
I = 500mA
I = 50mA
D
D
0 2 4 6 8 1012141618
V , GATE TO SOURCE VOLTAGE (V)
GS
4
GS,
V GATE SOURCE CURRENT (V)
3
T = -55°C
A
T = +25°C
A
2
1
0
0 0.2
0.4
0.6 0.8
1
ID, DRAIN CURRENT (A)
.7 Typical Transfer Characteristics(2N7002
Fi
DS30296 Rev. 2 - 2 4 of 4 CTA2P1N
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