Page 1
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
CT75AM-12
¡VCES ............................................................................... 600V
¡I
C .........................................................................................75A
¡High Speed Switching
¡Low V
CE Saturation Voltage
OUTLINE DRAWING Dimensions in mm
26
20.6MIN.
0.5
5
2
4
3
20MAX.
6
φ 3.2
1
2
1
q
2
1
5.45 5.45
4.0
wr
e
2.5
3
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
TO-3PL
APPLICATION
AC & DC motor controls, General purpose inver ters, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS (Tc = 25°C)
ConditionsSymbol
VCES
VGES
VGEM
IC
ICM
PC
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
—
Weight
Parameter Ratings
GE = 0V
V
VCE = 0V
VCE = 0V
Typical value
600
±20
±30
75
150
300
–40 ~ +150
–40 ~ +150
9.8
Unit
V
V
V
A
A
W
°C
°C
g
Feb.1999
Page 2
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CES
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Rth (j-c)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
VCE = 600V, VGE = 0V
IC = 7.5mA, VCE = 10V
IC = 75A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 300V, Resistance load,
IC = 75A, VGE = 15V, RGE = 10Ω
Junction to case
CT75AM-12
GENERAL INVERTER • UPS USE
Limits
Min. Typ. Max.
600
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
6.0
2.5
3100
400
130
40
265
175
245
—
—
±0.5
1
7.5
3.0
—
—
—
—
—
—
—
0.42
V
µA
mA
V
V
pF
pF
pF
ns
ns
ns
ns
°C/W
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
VGE = 20V
100
(A)
C
80
60
40
20
COLLECTOR CURRENT I
0
0246810
COLLECTOR-EMITTER VOLTAGE V
(TYPICAL)
15V
PC = 300W
Tj = 25°C
12V
11V
10V
9V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
(V)
8
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE V
(TYPICAL)
Tj = 25°C
150A
75A
30A
GE
(V)
Feb.1999
Page 3
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT75AM-12
GENERAL INVERTER • UPS USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
j
= 25°C
T
4
(V)
CE
3
2
VOLTAGE V
1
COLLECTOR-EMITTER SATURATION
0
0 20406080100
C
COLLECTOR CURRENT I
(A)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
Tj = 25°C
3
GE
= 0V
V
2
CAPACITANCE Cies, Coes, Cres (pF)
1
10
Z
f = 1MH
0
10
357 2 10
357 2 10
1
Cies
Coes
Cres
2
357 32
GATE EMITTER VOLTAGE CHARACTERISTIC
COLLECTOR CURRENT VS.
(TYPICAL)
(A)
C
100
80
VCE = 10V
j
= 25°C
T
60
40
20
COLLECTOR CURRENT I
0
0 4 8 12 16 20
GE
GATE-EMITTER VOLTAGE V
(V)
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
3
10
7
5
t
3
f
2
t
d(off)
t
2
10
7
5
3
SWITCHING TIME (ns)
2
1
10
0
10
23 57 10
10
1
r
t
d(on)
Tj = 25°C
CC
= 300V
V
GE
= 15V
V
G
= 10Ω
R
23 57
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
20
(V)
GE
16
VCE = 200V
12
8
4
GATE-EMITTER VOLTAGE V
0
0 40 80 120 160 200
GATE CHARGE Qg (nc)
300V
COLLECTOR CURRENT I
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
23 57
10
–2
–3
10
0
10
7
5
(j–c)
3
th
2
–1
10
7
5
3
2
TRANSIENT
–2
10
7
5
3
2
THERMAL IMPEDANCE Z
–3
10
PULSE WIDTH tw (s)
(TYPICAL)
–1
23 5723 57
10
–5
23 57
10
10
10
C
(A)
0
23 57
–4
23 57
10
10
10
10
1
7
5
3
2
7
5
3
2
–3
–2
–3
Feb.1999
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