Page 1
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
CT15SM-24
CT15SM-24
GENERAL INVERTER • UPS USE
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
5.0
20.0
2
4
19.5MIN.
¡VCES ............................................................................. 1200V
¡I
C ......................................................................................... 15A
¡High Speed Switching
¡Low V
CE Saturation Voltage
APPLICATION
AC & DC motor controls, General purpose inver ters, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS (Tc = 25°C)
ConditionsSymbol
VCES
VGES
VGEM
IC
ICM
PC
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
—
Weight
Parameter Ratings
GE = 0V
V
VCE = 0V
VCE = 0V
Typical value
q GATE
q
e
w COLLECTOR
e EMITTER
r COLLECTOR
TO-3P
Unit
1200
±20
±30
15
30
250
–40 ~ +150
–40 ~ +150
4.8
V
V
V
A
A
W
°C
°C
g
Feb.1999
Page 2
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CES
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Rth (j-c)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
VCE = 1200V, VGE = 0V
IC = 1.5mA, VCE = 10V
IC = 15A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
VCC = 600V, Resistance load,
IC = 15A, VGE = 15V, RGE = 20Ω
Junction to case
CT15SM-24
GENERAL INVERTER • UPS USE
Limits
Min. Typ. Max.
1200
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
6.0
2.7
1600
150
45
50
150
150
250
—
—
±0.5
1
7.5
3.6
—
—
—
—
—
—
—
0.50
V
µA
mA
V
V
pF
pF
pF
ns
ns
ns
ns
°C/W
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
VGE = 20V
20
16
12
8
4
COLLECTOR CURRENT IC (A)
0
0246810
COLLECTOR-EMITTER VOLTAGE V
(TYPICAL)
15V
Tj = 25°C
11V
10V
9V
CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
8
CE(sat) (V)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE V
(TYPICAL)
Tj = 25°C
IC = 30A
15A
10A
GE (V)
Feb.1999
Page 3
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
4
(V)
CE
3
2
VOLTAGE V
1
COLLECTOR-EMITTER SATURATION
0
0 4 8 12 16 20
COLLECTOR CURRENT I
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
Tj = 25°C
3
GE
= 0V
V
2
CAPACITANCE Cies, Coes, Cres (pF)
1
10
Z
f = 1MH
0
10
357 2 10
357 2 10
1
VGE = 15V
j
= 25°C
T
C
(A)
Cies
Coes
Cres
2
357 32
CT15SM-24
GENERAL INVERTER • UPS USE
GATE EMITTER VOLTAGE CHARACTERISTIC
(A)
C
COLLECTOR CURRENT I
10
10
SWITCHING TIME (ns)
10
COLLECTOR CURRENT VS.
(TYPICAL)
20
VCE = 10V
j
= 25°C
T
16
12
8
4
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE V
GE
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
3
7
5
3
2
2
7
5
3
2
1
0
10
23 57 10
10
t
d(off)
t
d(on)
1
t
f
t
r
Tj = 25°C
CC
= 600V
V
GE
= 15V
V
G
= 20Ω
R
23 57
(V)
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
24
(V)
GE
20
VCC = 400V
16
12
8
4
GATE-EMITTER VOLTAGE V
0
0 20406080100
GATE CHARGE Qg (nc)
600V
COLLECTOR CURRENT I
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
23 57
10
–2
–3
10
0
10
7
5
(j–c)
3
th
2
–1
10
7
5
3
2
TRANSIENT
–2
10
7
5
3
2
THERMAL IMPEDANCE Z
–3
10
PULSE WIDTH tw (s)
(TYPICAL)
–1
23 5723 57
10
–5
23 57
10
10
10
C
(A)
0
23 57
–4
23 57
10
10
10
10
1
7
5
3
2
–2
7
5
3
2
–3
–3
Feb.1999
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