Page 1
© 2000 IXYS All rights reserved
1 - 3
Phase Control Thyristors V
RRM
= 800-1400 V
I
T(RMS)
= 120 A
I
T(AV)M
= 69 A
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
900 800 CS 35-08io4
1300 1200 CS 35-12io4
1500 1400 CS 35-14io4
Symbol Test Conditions Maximum Ratings
I
T(RMS)
TVJ= T
VJM
120 A
I
T(AV)M
T
case
= 85°C; 180° sine 63 A
T
case
= 80°C; 180° sine 69 A
I
TSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1340 A
TVJ = T
VJM
t = 10 ms (50 Hz), sine 1100 A
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 7550 A2s
TVJ = T
VJM
t = 10 ms (50 Hz), sine 6050 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 6500 A2s
(di/dt)
cr
TVJ = T
VJM
repetitive, IT = 150 A 150 A/ms
f = 50 Hz, tP =200 ms
VD = 2/3 V
DRM
IG = 0.5 A non repetitive, IT = I
T(AV)M
400 A/ms
diG/dt = 0.5 A/ms
(dv/dt)
cr
TVJ = T
VJM
;V
DR
= 2/3 V
DRM
1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
P
GM
TVJ = T
VJM
tP = 30 ms10W
IT = I
T(AV)M
tP = 500 ms5W
P
G(AV)
0.5 W
V
RGM
10 V
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
M
d
Mounting torque 2.5 Nm
22 lb.in.
Weight 20 g
Features
●
Thyristor for line frequencies
●
International standard package
JEDEC TO-208AC
●
Planar glassivated chip
●
Long-term stability of blocking
currents and voltages
Applications
●
Motor control
●
Power converter
●
AC power controller
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 35
1
2
3
TO-208AC
(TO-65)
1 = Anode, 2 = Cathode, 3 = Gate
¼"-28 UNF-2 A
2
3
1
Page 2
© 2000 IXYS All rights reserved
2 - 3
Symbol Test Conditions Characteristic Values
I
R
, I
D
TVJ= T
VJM
; VR = V
RRM
; VD = V
DRM
£ 10 mA
V
T
IT= 150 A; TVJ = 25°C £ 1.5 V
V
T0
For power-loss calculations only (TVJ = 125°C) 0.85 V
r
T
3.5 mW
V
GT
VD = 6 V; TVJ = 25°C £ 1.5 V
TVJ = -40°C £ 1.9 V
I
GT
VD = 6 V; TVJ = 25°C £ 100 mA
TVJ = -40°C £ 200 mA
V
GD
TVJ = T
VJM
;V
D
= 2/3 V
DRM
£ 0.2 V
I
GD
£ 1mA
I
L
TVJ = 25°C; tP = 30 ms £ 100 mA
IG = 0.1 A; diG/dt = 0.1 A/ms
I
H
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 80 mA
t
gd
TVJ = 25°C; VD = 1/2 V
DRM
£ 2 ms
IG = 0.1 A; diG/dt = 0.1 A/ms
t
q
TVJ = T
VJM
; IT = 50 A, tP = 200 ms; di/dt = -10 A/ms typ. 100 ms
VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 V
DRM
R
thJC
DC current 0.4 K/W
R
thJH
DC current 0.6 K/W
d
S
Creepage distance on surface 1.7 mm
d
A
Strike distance through air 1.7 mm
a Max. acceleration, 50 Hz 50 m/s
2
CS 35
01234
0
100
200
300
400
500
10
0
10
1
10
2
10
3
10
4
0.2
0.4
0.6
0.8
2
4
6
8
0.1
1
10
I
T
V
G
I
G
V
T
A
mA V
V
Fig. 1 Gate trigger range
Triggering:
A = no; B = possible, C = safe
Fig. 2 On-state characteristics
TVJ= 25°C
TVJ= 125°C
2 4 6 8
IGD: TVJ= 25°C
IGD: TVJ=125°C
A
B
IGD: TVJ= -40°C
IGD: TVJ= 0°C
IGD: TVJ= 25°C
3
2
1
1: P
G(AV)
= 0.5 W
2: PGM= 5 W; tG = 500 ms
3: PGM= 10 W; tG = 30 ms
C
typ. lim.
Page 3
© 2000 IXYS All rights reserved
3 - 3
0 50 100 150
0
50
100
150
23456789110
10
3
10
4
10
-3
10
-2
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
0 20 40 60 80 100 120 140
0
50
100
150
200
50 100 150
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.2
0.4
0.6
0.8
I2t
I
TSM
A
t
t
T
c
P
T
W
I
T(AV)M
A
T
amb
t
s
Z
thJH
K/W
A
A2s
s
°C
ms °C
2
4
6
I
T(AV)M
30°
60°
120°
180°
DC
CS 35
Fig. 3 Surge overload current
I
TSM
: crest value, t: duration
Fig. 4 I2t versus time (1-10 ms)
Fig. 6 Power dissipation versus on-state current and ambient temperature
Fig. 5 Maximum forward current at
case temperature
Fig. 7 Transient thermal impedance junction to heatsink
R
thJH
for various conduction angles d:
dR
thJH
(K/W)
DC 0.6
180° 0.65
120° 0.677
60° 0.725
30° 0.775
Constants for Z
thJH
calculation:
iR
thi
(K/W) ti (s)
1 0.01 0.001
2 0.09 0.013
3 0.30 0.3
4 0.20 0.9
50Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
VR = 0 V
T
VJ
= 45°C
T
VJ
= 125°C
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
R
thJA
:
0.9 K/W
1.3 K/W
1.6 K/W
3.3 K/W
ase
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