Datasheet CS209AYN8, CS209AYDR8, CS209AYDR14, CS209AYD8, CS209AYD14 Datasheet (Cherry Semiconductor)

Page 1
1
Features
Separate Current
Regulator for Oscillator
Negative Transient
Suppression
Variable Low-Level
Feedback
Improved Performance
over Temperature
6mA Supply Current
Consumption at V
CC
= 12V
Output Current Sink
Capability 20mA at 4V
CC
100mA at 24V
CC
Package Options
8L PDIP & SO
14L SO
CS209A
Proximity Detector
7
8
1
2
3
4
5
6
OSC
TANK
Gnd
OUT
1
RF
V
CC
DEMOD
OUT
2
10
7
14
13
12
8
1
2
3
4
5
6
11
9
OSC
TANK
Gnd
OUT
1
N.C.
OUT
2
N.C.
N.C.
RF
V
CC
N.C.
DEMOD
N.C.
N.C.
CS209A
Description
The CS209A is a bipolar monolithic integrated circuit for use in metal detec­tion/proximity sensing applications. The IC (see block diagram) contains two on-chip current regulators, oscillator and low-level feedback circuitry, peak detection/demodulation circuit, a com­parator and two complementary output stages.
The oscillator, along with an external LC network, provides controlled oscilla­tions where amplitude is highly depen­dent on the Q of the LC tank. During low Q conditions, a variable low-level
feedback circuit provides drive to main­tain oscillation. The peak demodulator senses the negative portion of the oscil­lator envelop and provides a demodu­lated waveform as input to the com­parator. The comparator sets the states of the complementary outputs by com­paring the input from the demodulator to an internal reference. External loads are required for the output pins.
A transient suppression circuit is included to absorb negative transients at the tank circuit terminal.
Block Diagram
Absolute Maximum Ratings
Supply Voltage ................................................................................................24V
Power Dissipation (TA= 125¡C).............................................................200mW
Storage Temperature Range ....................................................Ð55¡C to +165¡C
Junction Temperature...............................................................Ð40¡C to +150¡C
Electrostatic Discharge (except TANK pin) ................................................2kV
Lead Temperature Soldering
Wave Solder(through hole styles only) ...........10 sec. max, 260¡C peak
Reflow (SMD styles only)...........60 sec. max above 183¡C, 230¡C peak
A Company
¨
Rev. 3/11/99
Cherry Semiconductor Corporation
2000 South County Trail, East Greenwich, RI 02818
Tel: (401)885-3600 Fax: (401)885-5786
Email: info@cherry-semi.com
Web Site: www.cherry-semi.com
OSC
RF
DVBE/R Current
Regulator
Oscillator
OSC
Feedback
Neg Transient
Suppression
TANK DEMOD
GND
4.8kW
300mA
DEMOD
V
CC
VBE/R Current
Regulator
+
COMP
-
V
CC
OUT
1
OUT
2
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2
Electrical Characteristics: -40¡C ² TA² 125¡C unless otherwise specified
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CS209A
8
6
4
2
100
4
8
12 16 20
Switching Delay (ms)
Output Load (kW)
(T = 22°C, VCC= 12V)
Output Switching Delay vs. Temperature
Output Switching Delay vs. Output Load
Typical Performance Characteristics
Package Pin Description
PACKAGE PIN# PIN SYMBOL FUNCTION
8L PDIP & SO 14L SO
1 1 OSC Adjustable feedback resistor connected between OSC and
RF sets detection range. 2 2 TANK Connects to parallel tank circuit. 3 3 Gnd Ground connection. 4 4 OUT
1
Complementary open collector output; When OUT1=
LOW, metal is present. 5 6 OUT
2
Complementary open collector output; When OUT2=
HIGH, metal is present. 6 10 DEMOD Input to comparator controlling OUT
1
and OUT2.
712V
CC
Supply voltage.
8 13 RF Adjustable feedback resistor connected between OSC and
RF set detection range.
5,7,8,9,11,14 NC No Connection.
Supply Current I
CC
VCC= 4V 3.5 6.0 mA V
CC
= 12V 6.0 11.6 mA
V
CC
= 24V 11.0 20.0 mA
Tank Current V
CC
= 20V -550 -300 -100 µA
Demodulator Charge Current V
CC
= 20V -60 -30 -10 µA
Output Leakage Current V
CC
= 24V 0.01 10.00 µA
Output V
SAT
VCC= 4V, IS =20mA 60 200 mV V
CC
= 24V, IS =100mA 200 500 mv
Oscillator Bias V
CC
= 20V 1.1 1.9 2.5 V
Feedback Bias V
CC
= 20V 1.1 1.9 2.5 V
Osc - Rf Bias V
CC
= 20V -250 100 550 mV
Protect Voltage I
TANK
= -10mA -10.0 -8.9 -7.0 V
Detect Threshold 720 1440 1950 mV Release Threshold 550 1200 1700 mV
6.5
(VCC = 12V, R
5.5
4.5
Switching Delay (ms)
3.5
2.5
-40 -20 0 20 40 60 80 100 120
load
= 1kW)
Temperature (°C)
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3
Demodulator Voltage vs. Distance for Different RF
Typical Performance Characteristics: continued
The CS209A is a metal detector circuit which operates on the principle of detecting a reduction in Q of an inductor when it is brought into close proximity of metal. The CS209A contains an oscillator set up by an external parallel resonant tank and a feedback resistor connected between OSC and RF. (See Test and Applications Diagram) The impedance of a parallel resonant tank is highest when the frequency of the source driving it is equal to the tankÕs res­onant frequency. In the CS209A the internal oscillator operates close to the resonant frequency of the tank circuit selected. As a metal object is brought close to the inductor, the amplitude of the voltage across the tank gradually begins to drop. When the envelope of the oscillation reach­es a certain level, the IC causes the output stages to switch states.
The detection is performed as follows: A capacitor con­nected to DEMOD is charged via an internal 30µA current source. This current, however, is diverted away from the capacitor in proportion to the negative bias generated by the tank at TANK. Charge is therefore removed from the capacitor tied to DEMOD on every negative half cycle of the resonant voltage. (See Figure 1) The voltage on the capacitor at DEMOD, a DC voltage with ripple, is then directly compared to an internal 1.44V reference. When the internal comparator trips it turns on a transistor which places a 23.6k½ resistor in parallel to the 4.8k½. The result­ing reference then becomes approximately 1.2V. This hys­teresis is necessary for preventing false triggering.
The feedback potentiometer connected between OSC and RF is adjusted to achieve a certain detection distance range. The larger the resistance the greater the trip-point distance (See graph Demodulator Voltage vs Distance for Different RF). Note that this is a plot representative of one particular set-up since detection distance is dependent on the Q of the tank. Note also from the graph that the capaci­tor voltage corresponding to the greatest detection dis­tance has a higher residual voltage when the metal object
Principle of Operation
is well outside the trip point. Higher values of feedback resistance for the same inductor Q will therefore eventu­ally result in a latched-ON condition because the residual voltage will be higher than the comparatorÕs thresholds.
As an example of how to set the detection range, place the metal object at the maximum distance from the inductor the circuit is required to detect, assuming of course the Q of the tank is high enough to allow the object to be within the ICÕs detection range. Then adjust the potentiometer to obtain a lower resistance while observing one of the CS209A outputs return to its normal state (see Test and Applications Diagram). Readjust the potentiometer slow­ly toward a higher resistance until the outputs have switched to their tripped condition. Remove the metal and confirm that the outputs switch back to their normal state. Typically the maximum distance range the circuit is capable of detecting is around 0.3 inch. The higher the Q, the higher the detection distance.
For this application it is recommended to use a core which concentrates the magnetic field in only one direc­tion. This is accomplished very well with a pot core half. The next step is to select a core material with low loss fac­tor (inverse of Q). The loss factor can be represented by a resistance in series with the inductor which arises from core losses and is a function of frequency.
The final step in obtaining a high Q inductor is the selec­tion of wire size. The higher the frequency the faster the decrease in current density towards the center of the wire. Thus most of the current flow is concentrated on the sur­face of the wire resulting in a high AC resistance. LITZ wire is recommended for this application. Considering the many factors involved, it is also recommended to operate at a resonant frequency between 200 and 700kHz. The formula commonly used to determine the Q for par­allel resonant circuits is:
Q
P
@
R
2¹fRL
CS209A
1.75
1.5
1.25
DEMOD (V)
1.0
Object Detected
2.5kW 5kW 7.5kW 12.5kW 15kW 17.5kW
(T = 21°C, VCC = 12V)
Object Not Detected, L Unloaded.
0.75
Distance To Object (in.)
0.4000.3000.2000.1000.0
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where R is the effective resistance of the tank. The resis­tance component of the inductor consists primarily of core losses and Òskin effectÓ or AC resistance.
The resonant capacitor should be selected to resonate with the inductor within the frequency range recommended in order to yield the highest Q. The capacitor type should be selected to have low ESR: multilayer ceramic for example.
Detection distances vary for different metals. Following are different detection distances for some selected metals and metal objects relative to one particular circuit set-up:
Commonly encountered metals:
¥ Stainless steel 0.101" ¥ Carbon steel 0.125" ¥ Copper 0.044" ¥ Aluminum 0.053" ¥ Brass 0.052"
Coins:
¥ US Quarter 0.055" ¥ Canadian Quarter 0.113" ¥ 1 German Mark 0.090" ¥ 1 Pound Sterling 0.080" ¥ 100 Japanese Yen 0.093" ¥ 100 Italian Lira 0.133"
12 oz. soda can: 0.087"
Principle of Operation: continued
Note that the above is only a comparison among different metals and no attempt was made to achieve the greatest detection distance.
A different type of application involves, for example, detecting the teeth of a rotating gear. For these applica­tions the capacitor on DEMOD should not be selected too small (not below 1000pF) where the ripple becomes too large and not too large (not greater than 0.01µF) that the response time is too slow. Figure 1 for example shows the capacitor ripple only and Figure 2 shows the entire capaci­tor voltage and the output pulses for an 8-tooth gear rotat­ing at about 2400 rpm using a 2200pF capacitor on the DEMOD pin.
Because the output stages go into hard saturation, a time interval is required to remove the stored base charge resulting in both outputs being low for approximately 3µs (see Output Switching Delay vs. Temperature graph). If more information is required about output switching characteristics please consult the factory.
Figure 1. Capacitor ripple.
Figure 2. Output pulse for an 8 tooth gear.
CS209A
V
OUT
1
V
DEMOD
V
TANK
V
DEMOD
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5
CS209A
Test and Application Diagram
20kW
OSC
RF
CS209A
V
OUT
OUT
CC
1
2
RL
1kW
NORMALLY
HI
NORMALLY
LO
RL
1kW
TANK
4300pF
L
Gnd
DEMOD
C
DEMOD
2200 pF
L: Core: Siemens B65531-D-R-33 52 Turns, 6x44 AWG, Litz Unserved Single Polyurethane
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CS209A
Rev. 3/11/99
Part Number Description
CS209AYN8 8 L PDIP CS209AYD8 8L SO Narrow CS209AYDR8 8L SO Narrow (tape & reel) CS209AYD14 14L SO Narrow CS209AYDR14 14L SO Narrow (tape & reel)
Ordering Information
Thermal Data 8L PDIP 8L SO 14L SO
R
QJC
typ 52 45 30 ¡C/W
R
QJA
typ 100 165 125 ¡C/W
D
Lead Count Metric English
Max Min Max Min 8L PDIP 10.16 9.02 .400 .355 8L SO 5.00 4.80 .197 .189 14L SO 8.75 8.55 .344 .337
Package Specification
PACKAGE DIMENSIONS IN mm (INCHES)
PACKAGE THERMAL DATA
© 1999 Cherry Semiconductor Corporation
Cherry Semiconductor Corporation reserves the right to make changes to the specifications without notice. Please contact Cherry Semiconductor Corporation for the latest available information.
Plastic DIP (N); 300 mil wide
0.39 (.015) MIN.
2.54 (.100) BSC
1.77 (.070)
1.14 (.045)
D
Some 8 and 16 lead packages may have 1/2 lead at the end of the package. All specs are the same.
.203 (.008)
.356 (.014)
REF: JEDEC MS-001
3.68 (.145)
2.92 (.115)
8.26 (.325)
7.62 (.300)
7.11 (.280)
6.10 (.240)
.356 (.014)
.558 (.022)
Surface Mount Narrow Body (D); 150 mil wide
1.27 (.050) BSC
0.51 (.020)
0.33 (.013)
6.20 (.244)
5.80 (.228)
4.00 (.157)
3.80 (.150)
1.57 (.062)
1.37 (.054)
D
0.25 (0.10)
0.10 (.004)
1.75 (.069) MAX
1.27 (.050)
0.40 (.016)
REF: JEDEC MS-012
0.25 (.010)
0.19 (.008)
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