Datasheet CRF-22010-101, CRF-22010-001 Datasheet (CREE)

CRF-22010-001
CRF-22010-101

©

Cree, Inc. 2003

Specifications subject to change without notice

Rev 0.91 - March 28, 2003 http://www.cree.com/

10 W SiC RF Power MESFET

Features Applications

• 12 dB Small Signal Gain • Class A, AB Amplifiers

• 10 W Minimum P

1dB

• TDMA, EDGE, CDMA, and W-CDMA

• 48 V Operation • Broadband Amplifiers

• High Breakdown Voltage • CATV Amplifiers

• High Temperature Operation • MMDS

• Up to 3 GHz Operation

• High Efficiency

Description

Cree’s CRF-22010 is a silicon carbide (SiC) RF power Metal-Semiconduc­tor Field-Effect Transistor (MESFET). SiC has superior properties com­pared to silicon or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity, and higher thermal conductivity.
SiC MESFETs offer greater power density and increased reliability com­pared to Si and GaAs transistors.

Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature

Parameter Symbol Rating Units

Drain-Source Voltage V

DSS

120 VDC

Gate-Source Voltage V

GS

-25, +3 VDC

Total Device Dissipation P

D

62.5 W

Storage Temperature T

STG

-40, 150 °C

Operating Junction Temperature T

J

250 °C

Thermal Resistance, Junction to Case R

qJC

3.6 °C/W

Soldering Temperature T

S

250 °C

Angled lead = Gate
Non-angled lead = Drain
Case/Flange = Source

CASE STYLE 101

CRF-22010-101

CASE STYLE 001

CRF-22010-001

CRF-22010-001
CRF-22010-101

©

Cree, Inc. 2003

Specifications subject to change without notice

2 http://www.cree.com/

Notes:

1

Drain Efficiency = P

OUT/PDC

2

Power Added Efficiency (PAE) = (P

OUT

- PIN)/P

DC

Electrical Characteristics (TC = 25°C)

Characteristic Symbol Min Typ Max Units Conditions

DC CHARACTERISTICS

Gate Threshold Voltage V

GS(th)

-12 -10 - VDC VDS = 10 V, ID = 0.5 mA

Gate Quiescent Voltage V

GS(Q)

--6-VDCV

DS

= 48 V, ID = 500 mA

Zero Gate Voltage Drain Current I

DSS

1.1 1.5 1.8 A VDS = 10 V, VGS = 0 V

Drain-Source Breakdown Voltage V

(BR)DSS

100 110 120 VDC VGS = -26 V, ID = 3 mA

Forward Transconductance g

m

-150-mSV

DS

= 48 V, ID = 500 mA

Case Operating Temperature T

C

-30 - 120 °C

Screw Torque (101 Style Package) T 0.33 - 0.37 ft·lb

RF CHARACTERISTICS

Gain G

SS

10 12 - dB VDD = 48 V, IDQ = 500 mA, f =

2000 MHz

Power Output at 1 dB Compression P

1dB

10 12 - W VDD = 48 V, IDQ = 500 mA, f =

2000 MHz

Drain Efficiency

1, 2

h 40 45 - % VDD = 48 V, IDQ = 500 mA, f =

2000 MHz, P

OUT

= P

1dB

Intermodulation Distortion IMD

3

--30-dBcV

DD

= 48 V, IDQ = 500 mA, f1 =

2000.0 MHz, f2 = 2000.1 MHz,
P

OUT

= 10 W PEP

CRF-22010-001
CRF-22010-101

Specifications subject to change without notice© Cree, Inc. 2003

http://www.cree.com/3

Typical Broadband Performance (TC = 25°C, VDS = 48 V, IDQ = 500 mA)

CR22010 Single-Ended Broadband Amp; Untuned Prototype

0

2

4

6

8

10

12

14

16

1.7 1.8 1.9 2.0 2.1 2.2 2.3

Frequency (GHz)

Gain (dB)

25

27

29

31

33

35

37

39

41

P1dB (dBm)

Gain
P1dB
W-CDMA

3GPP Test Model 1
with 16 DPCH

CR22010 Balanced Broadband Amp

Vds=48V, Idq=500mA/Device; Untuned Prototype

2

4

6

8

10

12

14

16

1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4

Frequency (GHz)

Gain (dB)

30

32

34

36

38

40

42

44

P1dB (dBm)

Gain
P1dBm
W-CDMA

3GPP Test Model 1
with 16 DPCH

CRF-22010-001
CRF-22010-101

©

Cree, Inc. 2003

Specifications subject to change without notice

4 http://www.cree.com/

Typical Broadband Performance (TC = 25°C, VDS = 48 V, IDQ = 500 mA)

CR22010 Single-Ended Broadband Amp

Vds=48V and 28V, Idq=500mA; Untuned Prototype

7

8

9

10

11

12

13

14

1.8 1.9 2.0 2.1 2.2

Frequency (GHz)

Gain (dB)

37

38

39

40

41

42

43

44

P1dB (dBm)

48V Gain
28V Gain
48V P1dB
28V P1dB

CR22010 Single-Ended and Balanced Amp |S11|; Untuned Prototype

-35

-30

-25

-20

-15

-10

-5

0

1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4

Frequency (GHz)

|S11| (dB)

Single-Ended
Balanced

CRF-22010-001
CRF-22010-101

Specifications subject to change without notice© Cree, Inc. 2003

http://www.cree.com/5

Typical Scattering Parameters (Small Signal Class A, VDS=48 V, IDQ = 500 mA, ang in deg)

freq

100.0MHz

200.0MHz

300.0MHz

400.0MHz

500.0MHz

600.0MHz

700.0MHz

800.0MHz

900.0MHz

1.000GHz

1.100GHz

1.200GHz

1.300GHz

1.400GHz

1.500GHz

1.600GHz

1.700GHz

1.800GHz

1.900GHz

2.000GHz

2.100GHz

2.200GHz

2.300GHz

2.400GHz

2.500GHz

2.600GHz

2.700GHz

2.800GHz

2.900GHz

3.000GHz

3.100GHz

3.200GHz

3.300GHz

3.400GHz

3.500GHz

3.600GHz

3.700GHz

3.800GHz

3.900GHz

4.000GHz

S(1,1)

0.992 / -24.815

0.972 / -47.553

0.948 / -67.048

0.925 / -83.140

0.907 / -96.226

0.893 / -106.865

0.882 / -115.585

0.874 / -122.815

0.868 / -128.889

0.864 / -134.057

0.860 / -138.512

0.858 / -142.398

0.856 / -145.826

0.854 / -148.880

0.853 / -151.628

0.852 / -154.123

0.852 / -156.406

0.852 / -158.512

0.852 / -160.468

0.852 / -162.297

0.852 / -164.018

0.852 / -165.647

0.853 / -167.196

0.853 / -168.678

0.853 / -170.102

0.854 / -171.477

0.854 / -172.809

0.855 / -174.106

0.855 / -175.372

0.856 / -176.613

0.856 / -177.833

0.857 / -179.037

0.857 / 179.772

0.857 / 178.591

0.858 / 177.416

0.858 / 176.245

0.858 / 175.074

0.859 / 173.902

0.859 / 172.726

0.859 / 171.543

S(1,2)

0.022 / 75.220

0.041 / 61.737

0.056 / 50.220

0.066 / 40.689

0.074 / 32.845

0.079 / 26.326

0.082 / 20.818

0.085 / 16.078

0.087 / 11.925

0.088 / 8.226

0.089 / 4.884

0.090 / 1.826

0.091 / -1.003

0.091 / -3.644

0.091 / -6.129

0.092 / -8.483

0.092 / -10.726

0.092 / -12.874

0.092 / -14.939

0.092 / -16.932

0.092 / -18.863

0.092 / -20.737

0.092 / -22.562

0.092 / -24.342

0.092 / -26.083

0.092 / -27.787

0.092 / -29.460

0.092 / -31.103

0.091 / -32.720

0.091 / -34.313

0.091 / -35.884

0.091 / -37.437

0.091 / -38.972

0.091 / -40.492

0.091 / -41.999

0.091 / -43.494

0.091 / -44.979

0.091 / -46.456

0.092 / -47.927

0.092 / -49.393

S(2,1)

8.534 / 164.613

7.928 / 150.522

7.153 / 138.396

6.372 / 128.258

5.664 / 119.807

5.053 / 112.682

4.535 / 106.568

4.099 / 101.223

3.730 / 96.466

3.416 / 92.163

3.148 / 88.219

2.916 / 84.559

2.714 / 81.130

2.538 / 77.890

2.383 / 74.807

2.245 / 71.857

2.122 / 69.019

2.011 / 66.278

1.912 / 63.621

1.822 / 61.038

1.741 / 58.520

1.667 / 56.060

1.599 / 53.651

1.537 / 51.289

1.480 / 48.968

1.427 / 46.686

1.379 / 44.439

1.334 / 42.223

1.293 / 40.035

1.255 / 37.874

1.219 / 35.738

1.186 / 33.622

1.155 / 31.527

1.127 / 29.450

1.100 / 27.389

1.075 / 25.342

1.052 / 23.309

1.031 / 21.286

1.011 / 19.273

0.993 / 17.267

S(2,2)

0.222 / -38.721

0.260 / -68.263

0.299 / -88.841

0.332 / -103.288

0.357 / -113.709

0.376 / -121.434

0.391 / -127.302

0.403 / -131.859

0.413 / -135.472

0.423 / -138.389

0.431 / -140.787

0.439 / -142.792

0.447 / -144.496

0.454 / -145.970

0.461 / -147.264

0.468 / -148.418

0.475 / -149.464

0.482 / -150.425

0.489 / -151.320

0.495 / -152.164

0.502 / -152.968

0.509 / -153.743

0.515 / -154.496

0.521 / -155.233

0.528 / -155.958

0.534 / -156.675

0.540 / -157.389

0.546 / -158.100

0.552 / -158.811

0.557 / -159.525

0.563 / -160.241

0.568 / -160.962

0.573 / -161.688

0.578 / -162.421

0.583 / -163.160

0.588 / -163.906

0.592 / -164.661

0.597 / -165.424

0.601 / -166.196

0.605 / -166.977

CRF-22010-001
CRF-22010-101

©

Cree, Inc. 2003

Specifications subject to change without notice

6 http://www.cree.com/

10 W Class A Impedance Data, VDS = 48 V, IDQ = 500 mA, 101 Style Package

Frequency

Z

s

(ohms) Zl (ohms)

MHz R jX R jX

1805 4.0 -0.5 14 8.7

1990 3.8 -3.0 13 9.0

2170 3.1 -5.4 11 6.0

Z

l

Z

s

Z

s

- Input match from gate

Z

l

- Output match from drain

Z

l

Z

s

CRF-22010-001
CRF-22010-101

Specifications subject to change without notice© Cree, Inc. 2003

http://www.cree.com/7

All products conform to the listed mechanical specifications within the tolerances shown.

PACKAGE DIMENSIONS (UNITS IN INCHES)

STYLE 001

STYLE 101

.050 ± .005

.050 ± .005

.160 ± .005

1

2

.006

.320 ± .005

.080 ± .005

.080 ± .005

.070 ± .005

.004

3

.020 ± .005

.075 ± .005

.040 ± .005

.200 ± .005

Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source

.050 ± .005

.050 ± .005

.375 ± .005

Ø .100 ± .005

.017 ± .005

1

2

.020 ± .005

.075 ± .005

.040 ± .005

.200 ± .005

.550 ± .005

.006

.320 ± .005

.080 ± .005

.080 ± .005

.070 ± .005

.004

.160 ± .005

3

Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source

CRF-22010-001
CRF-22010-101

©

Cree, Inc. 2003

Specifications subject to change without notice

8 http://www.cree.com/

Disclaimer: Specifications are subject to change without notice. Cree, Inc. believes the information contained
within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for
any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and
do vary in different applications, and actual performance can vary over time. All operating parameters should be
validated by customer’s technical experts for each application. Cree products are not designed, intended, or
authorized for use as components in applications intended for surgical implant into the body or to support or sus­tain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applica­tions for the planning, construction, maintenance or direct operation of a nuclear facility. CREE is a trademark of
Cree, Inc.

Contact Information:

Cree Inc.
4600 Silicon Drive
Durham, NC 27703
919-313-5300 [sales]
919-313-5451 [fax]
Sales Email: [e-mail]
Web: http://www.cree.com/