Page 1
SMD Type
Non-Insulated Type,Glass Passivation Type
Features
IT(AV) :0.8A
VDRM :400V/600V
IGT :100 A
Thyristor
Low Power Use
CR08AS
1GATE
2ANODE
3CATHODE
Absolute Maximum Ratings Ta = 25
Parameter Symbol CR08AS-8 CR08AS-12 Unit
Repetitive peak reverse voltage V
Non-repetitive peak reverse voltage V
DC reverse voltage V
Repetitive peak off-state voltage *1 V
DC off-state voltage *1 V
RMS on-state current
Average on-state current I
Surge on-state current I
2
t for fusing
I
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage V
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
*1 With Gate-to-cathode resistance RGK=1k
RRM 400 600 V
RSM 500 720 V
R(DC) 320 480 V
DRM 400 600 V
D(DC) 320 480 V
T(RMS) A
I
T(AV) A
TSM A
2
tA
I
P
GM W
P
G(AV) W
FGM V
V
RGM V
FGM A
I
j
T
stg
T
1.26
0.8
10
0.42
0.5
0.1
6
6
0.3
-40 to +125
-40 to +125
2
s
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1
Page 2
SMD Type
Thyristor
CR08AS
Electrical Characteristics
Ta = 25
Parameter Symbol Testconditons Min Typ. Max Unit
Repetitive peak reverse current I
Repetitive peak off-state current I
On-state voltage V
Gate trigger voltage V
Gate non-trigger voltage V
Gate trigger current I
Holding current I
Thermal resistance R
*1 IGT,VGTmeasurement circuit.
RRM
Tj=125 ,V
DRM
Tj=125 ,V
TM
Ta=25 ,ITM=2.5A, instantaneous value
GT
Ta=25 ,VD=6V, IT=0.1A*1
GD
Tj=125 ,VD=1/2V
GT
Tj=25 ,VD=6V, IT=0.1A *1
H
Tj=25 ,VD=12V, RGK=1k
th (j-a)
Junction to ambient 65
RRM
applied,RGK=1k
DRM
applied, RGK=1k
DRM,RGK
=1k
0.5 mA
0.5 mA
1.5 V
0.8 V
0.2 V
1
100
*2
1.5 3 mA
A
W
*2 If special values of IGTare required, choose at least two items from those listed in the table below.
Item A B C
( A)
GT
I
1to30 20to50 40to100
Marking
NO. CRO8AS-8 CRO8AS-12
Marking AD AF
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
Ta = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
501 423
RATED SURGE ON-STATE CURRENT
10
9
8
7
6
5
4
3
2
1
SURGE ON-STATE CURRENT (A)
0
10023 5710
44
1
23 5710
2
2
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ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Page 3
SMD Type
Thyristor
CR08AS
GATE CHARACTERISTICS
2
10
7
5
3
2
V
= 6V
FGM
1
10
7
5
P
= 0.1W
G(AV)
3
2
VGT = 0.8V
0
10
7
5
3
2
–1
10
GATE VOLTAGE (V)
7
VGD = 0.2V
5
3
2
–2
10
–2
23 57 23 57
10
10
–1
IGT = 100µA
(T
j
= 25°C)
0
10
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
)
0.9
V
(
0.8
0.7
DISTRIBUTION
TYPICAL EXAMPLE
0.6
0.5
0.4
0.3
0.2
GATE TRIGGER VOLTAGE
0.1
0
–20 20 80
06040 100
23 57
PGM = 0.5W
FGM
I
= 0.3A
1
23 57 23
10
10
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
3
10
TYPICAL EXAMPLE
7
5
100 (%)
3
2
2
10
= t°C)
= 25°C)
7
j
j
5
3
2
1
10
7
5
3
2
0
10
GATE TRIGGER CURRENT (T
2
GATE TRIGGER CURRENT (T
16060–20–40 0 20 40 80 100120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
0
2310
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
120–40
TRANSIENT THERMAL IMPEDANCE (°C/W)
5710123 5710223 5710
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
–3
2310
5710–223 5710–123 5710
3
0
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
1.6
1.4
θ = 30° 60° 120°90°
180°
1.2
1.0
0.8
0.6
0.4
0.2
AVERAGE POWER DISSIPATION (W)
RESISTIVE, INDUCTIVE LOADS
0
0.4 0.8 1.2 1.40.2 0.6 1.0
θ
360°
AVERAGE ON-STATE CURRENT (A)
TIME (s)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
25 25 t0.7
ALUMINUM BOARD
140
WITH SOLDERING
120
100
80
60
θ = 30°
40
20
AMBIENT TEMPERATURE (°C)
1.60
0
90° 180°
60° 120°
0.4 0.8 1.2 1.40.2 0.6 1.0
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
1.60
AVERAGE ON-STATE CURRENT (A)
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Page 4
SMD Type
ALLOWABLE AMBIENT TEMPERATURE VS.
160
140
120
100
80
60
40
20
AMBIENT TEMPERATURE (°C)
th(j – a)
R
0
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
= 200°C/W
0.2 0.4 0.6 0.70.1 0.3 0.5
θ
360°
θ = 180°
65°C/W
90°C/W
CR08AS
0.80
Thyristor
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
AVERAGE POWER DISSIPATION (W)
0
θ = 30° 60° 120°90°
RESISTIVE LOADS
0.4 0.8 1.2 1.40.2 0.6 1.0
180°
θ θ
360°
1.60
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
ALUMINUM BOARD
140
WITH SOLDERING
120
100
80
60
40
20
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
160
140
120
100
80
60
40
20
AMBIENT TEMPERATURE (°C)
θ = 30°
0
0
0.4 0.8 1.2 1.40.2 0.6 1.0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
θ = 30° 120°
0.4 0.8 1.2 1.40.2 0.6 1.0
RESISTIVE LOADS
NATURAL
CONVECTION
120°
60°
90° 180°
270°60°
180°
90°
θ θ
360°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
DC
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
AVERAGE POWER DISSIPATION (W)
1.60
1.60
0
160
100 (%)
140
)
120
)
100
= t°C
= 25 °C
j
j
T
T
(
(
80
60
40
20
BREAKOVER VOLTAGE
BREAKOVER VOLTAGE
0
(RECTANGULAR WAVE)
θ = 30° 60° 120°
0.4 0.8 1.2 1.40.2 0.6 1.0
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
0 40 80 120140–20 20 60 100
90° 180°
270°
RESISTIVE,
INDUCTIVE
LOADS
RGK = 1kΩ
DC
θ
360°
1.60
160–40
4
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AVERAGE ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
Page 5
SMD Type
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
Thyristor
CR08AS
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
100 (%)
)
)
= rkΩ
= 1kΩ
GK
GK
R
R
(
(
TYPICAL EXAMPLE
100
80
60
40
20
BREAKOVER VOLTAGE
BREAKOVER VOLTAGE
Tj = 125°C
0
–1
2310
5710023 5710123 5710
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
1
10
DISTRIBUTION
7
5
3
2
0
10
7
5
3
2
–1
10
7
5
HOLDING CURRENT (mA)
3
2
= 1kΩ
GK
R
–2
10
0 20 40 80 100120140
TYPICAL EXAMPLE
I
(25°C) = 35µA
GT
60–20–40–60
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
100 (%)
)
)
160
TYPICAL EXAMPLE
140
Tj = 125°C
R
= 1kΩ
GK
120
100
dv/dt = 1V/µs
dv/dt = vV/µs
80
(
(
60
40
20
0
BREAKOVER VOLTAGE
2
BREAKOVER VOLTAGE
0
2310
5710123 5710223 5710
3
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
500
TYPICAL EXAMPLE
(25°C) IH (1kΩ)
GT
100 (%)
)
)
= rkΩ
= 1kΩ
GK
GK
R
R
(
(
I
# 1 25µA 0.9mA
400
300
200
# 1
100
0
–1
Tj = 25°C
2310
5710023 5710123 5710
2
HOLDING CURRENT
HOLDING CURRENT
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
HOLDING CURRENT (mA)
0.5
0
0
10
GATE TRIGGER CURRENT (µA)
10
GATE TO CATHODE RESISTANCE (kΩ)
TURN-ON TIME VS. GATE CURRENT
2
10
TYPICAL EXAMPLE
Tj = 25°C
1
10
2
7
5
3
2
1
10
7
5
3
2
0
10
7
TURN-ON TIME (µs)
5
3
2
–1
10
–1
2310
5710023 5710123 5710
VD = 100V
RL = 47Ω
= 1kΩ
GK
R
Ta = 25°C
2
GATE CURRENT (mA)
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5
Page 6
SMD Type
Thyristor
CR08AS
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
40
VD = 50V, VR = 50V
35
T
I
= 2A, RGK = 1kΩ
30
DISTRIBUTION
25
20
15
10
TURN-OFF TIME (µs)
5
0
4
10
7
5
100 (%)
3
2
)
)
3
10
DC
tw
(
(
7
5
3
2
2
10
7
5
3
2
GATE TRIGGER CURRENT
GATE TRIGGER CURRENT
1
10
10
40 80 120 14020 60 100
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
# 1
# 2
0
24357 10
TYPICAL EXAMPLE
Tj = 25°C
TYPICAL EXAMPLE
I
# 1 10µA
# 2 65µA
1
10
GT
(DC)
24357
REPETITIVE PEAK REVERSE VOLTAGE VS.
160
100 (%)
)
140
)
120
= t°C
= 25°C
j
j
100
1600
REPETITIVE PEAK REVERSE VOLTAGE (T
REPETITIVE PEAK REVERSE VOLTAGE (T
320
280
(°C/W)
240
200
160
120
THERMAL IMPEDANCE
2
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
80
60
40
20
0
–20 20 80 140120
06040 100
JUNCTION TEMPERATURE (°C)
THERMAL IMPEDANCE VS.
BOARD DIMENSIONS
WITHOUT EPOXY PLATE
80
40
10×10 EPOXY PLATE
WITH COPPER FOIL
0
20 40 60 7010 30 50
160–40
t0.7
ALUMINUM
BOARD
800
6
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GATE CURRENT PULSE WIDTH (µs)
BOARD DIMENSIONS (mm)
REGULAR SQUARE ONE SIDE
Page 7
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