Page 1
Preliminary Data Sheet PD - 5.035
CPV364MM
IGBT SIP MODULE
Features
Short Circuit Rated Fast IGBT
1
• Short Circuit Rated - 10µs @ 125°C, VGE = 15V •
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz)
Q1
3
Q2
6
D1 D3 D5
Q3
9
D2 D4 D6
Q4
12
Q5
15
10 164
Q6
18
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
13 A
per phase (4.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 80%
7 13 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 22
IC @ TC = 100°C Continuous Collector Current, each IGBT 12
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 9.3
I
FM
t
sc
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 62.5 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 25
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 44 A
Clamped Inductive Load Current 44
Diode Maximum Forward Current 44
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55 - 0.8 N•m)
RMS
Thermal Resistance
Parameter Typ. Max. Units
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 2.0
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction — 3.0 °C/W
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1 —
θCS
Wt Weight of module 20 (0.7) — g (oz)
Revision 2
C-425
Page 2
CPV364MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Refer to Section D for the following:
Package Outline 5 - IMS-2 Section D - page D-14
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.7 — IC = 12A VGE = 15V
— 2.0 — V IC = 22A
— 1.9 — IC = 12A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 9.2 12 — S VCE = 100V, IC = 24A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 3500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.3 1.7 V IC = 15A
— 1.2 1.6 IC = 15A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V
Total Gate Charge (turn-on) — 59 80 IC = 24A
Gate - Emitter Charge (turn-on) — 8.6 10 nC VCC = 400V
Gate - Collector Charge (turn-on) — 25 42
Turn-On Delay Time — 26 — TJ = 25°C
Rise Time — 37 — ns IC = 24A, VCC = 480V
Turn-Off Delay Time — 240 410 VGE = 15V, RG = 10Ω
Fall Time — 230 420 Energy losses include "tail" and
Turn-On Switching Loss — 0.75 — diode reverse recovery.
Turn-Off Switching Loss — 1.65 — mJ
Total Switching Loss — 2.4 3.6
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω, V
Turn-On Delay Time — 28 — TJ = 150°C,
Rise Time — 37 — ns IC = 24A, VCC = 480V
Turn-Off Delay Time — 380 — VGE = 15V, RG = 10Ω
Fall Time — 460 — Energy losses include "tail" and
Total Switching Loss — 4.5 — mJ diode reverse recovery.
Input Capacitance — 1500 — VGE = 0V
Output Capacitance — 190 — pF VCC = 30V
Reverse Transfer Capacitance — 20 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 42 60 ns TJ = 25°C
— 74 120 TJ = 125°C IF = 15A
Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C
— 6.5 10 TJ = 125°C VR = 200V
Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C
— 220 600 TJ = 125°C di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C
During t
b
Repetitive rating; VGE=20V, pulse width
limited by maximum junction temperature.
— 160 — TJ = 125°C
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 10Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-426
Pulse width 5.0µs,
< 500V
CPK
single shot.
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