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Short Circuit Rated UltraFast IGBTIGBT SIP MODULE
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Features
• Short Circuit Rated - 10µs @ 125°C, VGE = 15V •
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
Q1
3
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Q2
6
Product Summary
Output Current in a Typical 20 kHz Motor Drive
3.5 A
per phase (1.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
D1 D3 D5
D2 D4 D6
7 13 19
PD - 5.032
CPV362MK
1
Q3
9
Q4
12
Q5
15
10 164
Q6
18
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7
IC @ TC = 100°C Continuous Collector Current, each IGBT 3.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 3.4
I
FM
t
sc
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 11 A
Clamped Inductive Load Current 11
Diode Maximum Forward Current 11
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Isolation Voltage, any terminal to case, 1 min. 2500 V
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55 - 0.8 N•m)
RMS
Thermal Resistance
Parameter Typ. Max. Units
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 5.5
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction — 9.0 °C/W
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1 —
θCS
Wt Weight of module 20 (0.7) — g (oz)
C-963
Revision 2
Page 2
CPV362MK
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.37 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.3 3.5 IC = 3.0A VGE = 15V
— 2.7 — V IC = 5.7A See Fig. 2, 5
— 2.2 — IC = 3.0A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 1.9 3.3 — S VCE = 100V, IC = 6.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V
Total Gate Charge (turn-on) — 17 26 IC = 6.0A
Gate - Emitter Charge (turn-on) — 4.3 6.8 nC VCC = 400V
Gate - Collector Charge (turn-on) — 6.4 11 See Fig. 8
Turn-On Delay Time — 60 — TJ = 25°C
Rise Time — 20 — ns IC = 3.0A, VCC = 480V
Turn-Off Delay Time — 110 220 VGE = 15V, RG = 50Ω
Fall Time — 50 110 Energy losses include "tail" and
Turn-On Switching Loss — 0.10 — diode reverse recovery.
Turn-Off Switching Loss — 0.10 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 0.20 0.27
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω, V
Turn-On Delay Time — 60 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 17 — ns IC = 3.0A, VCC = 480V
Turn-Off Delay Time — 230 — VGE = 15V, RG = 50Ω
Fall Time — 130 — Energy losses include "tail" and
Total Switching Loss — 0.29 — mJ diode reverse recovery.
Input Capacitance — 350 — VGE = 0V
Output Capacitance — 50 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.7 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
During t
b
— 210 — TJ = 125°C 17
CPK
< 500V
Notes:
Repetitive rating; VGE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-964
Pulse width 5.0µs,
single shot.
Page 3
CPV362MK
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltage (V)
C
I , Collector-to-Emitter Current (A)
, Gate-to-Em
er Voltage (V)
GE
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5.0
4.0
3.0
2.0
Load Current (A)
T = 90°C
C
T = 125°C
J
1.0
Power Factor = 0.8
Modulation Depth = 0.8
V = 60% of Rated Voltage
CC
0.0
0 1 10 100
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
100
1.6
1.2
0.9
0.6
0.3
0
Total Output Power (kW)
10
1
0.1
0.1 1 10
V
Fig. 2 - Typical Output Characteristics
T = 25°C
J
T = 150°C
J
V = 15V
G E
20µs PU LS E WIDTH
itt
C-965
10
T = 150°C
J
T = 25°C
J
V = 100 V
CC
1
5 10 15 20
V
5µs PUL SE WIDTH
itt
Fig. 3 - Typical Transfer Characteristics
Page 4
CPV362MK
, Case Temperature (°C)
C
CE
V , Collector-to-Emitter Voltage (V)
A
t , Rectangular Pulse Duration (sec)
1
thJC
Th erm al Resp on se (Z )
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6
4
2
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs.
Case Temperature
10
5.0
V = 15V
G E
80 µs PULSE WIDTH
4.0
3.0
2.0
1.0
-6 0 -40 -20 0 20 40 6 0 80 100 1 2 0 14 0 160
I = 12A
C
I = 6.0A
C
I = 3.0A
C
T
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
D = 0 .50
1
0.1
0.0 1
0.000 01 0.0 0 01 0.0 0 1 0.01 0.1 1 10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.0 2
0.0 1
S ING L E PU LSE
(T H ER MA L RES PO N S E )
C-966
P
D M
Note s :
1. Duty facto r D = t / t
2. Peak T = P x Z + T
J
DM
2
1
thJC
t
1
t
2
C
Page 5
CPV362MK
A
CE
C, Capacitance (pF)
, Collector-to-Em
er Voltag e (V)
GE
V , Gate-to -Emitter Voltage (V)
, Total Gate Charge (nC)
g
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700
600
500
400
300
200
100
0
1 10 100
V = 0V, f = 1MHz
GE
C = C + C , C SHORTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
V
itt
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.21
V = 480V
CC
V = 15V
GE
T = 25°C
C
I = 3.0A
C
0.20
20
V = 4 80 V
CE
I = 6.0 A
C
16
12
8
4
0
0 4 8 12 1 6 20
Q
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1
R = 50
V = 15V
V = 480V
G
GE
CC
Ω
I = 6.0A
C
0.19
0.18
Total Switching Losses (mJ)
0.17
0 10 20 30 40 50 60
Fig. 9 - Typical Switching Losses vs. Gate
R , Gate Resistance (Ω)
G
Resistance
A
C-967
I = 3.0A
C
I = 1.5A
C
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Case Temperature (°C)
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
Page 6
CPV362MK
A
1000
A
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0.80
R = 50
T = 150°C
V = 480V
V = 15V
0.60
0.40
0.20
G
C
CC
GE
Ω
Total Switching Losses (mJ)
0.00
0 1 2 3 4 5 6 7
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
V = 20V
GE
T = 125°C
J
10
SAFE OPERATING AREA
1
C
I , Collector-to-Emitter Current (A)
0.1
1 10 100
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
F
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
Instantaneous Forward Current - I (A)
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Dr op - V (V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-968
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CPV362MK
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100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 16A
F
60
rr
t - (ns)
40
I = 4.0A
F
20
0
100 1000
di /dt - (A/µs)
f
I = 8.0A
F
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
V = 200V
R
T = 125°C
J
T = 25°C
J
400
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 16A
10
IRRM
I - (A)
I = 8.0A
F
1
100 1000
F
di /dt - (A/µs)
f
I = 4.0A
F
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
300
RR
Q - (nC)
200
100
0
100 1000
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
I = 8.0A
F
I = 16A
F
di /dt - (A/µs)
I = 4.0A
1000
di(rec)M/dt - (A/µs)
I = 4.0A
F
100
f
100 1000
F
I = 8.0A
F
I = 16A
F
di /dt - (A/µs)
f
(rec)M
/dt vs. dif/dt
C-969
Page 8
CPV362MK
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Same typ e
device as
D.U.T .
90% Vge
+Vge
Vce
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, E
10% +Vg
10% Ic
Vcc
td(on)
off(diode)
Vce
t1
, trr, Qrr, Irr, t
90% Ic
5% Vce
tr
, tr, t
d(on)
GATE VOLTAGE D.U.T.
+Vg
d(off)
DUT VOLTAGE
AND CURRENT
Ipk
Eon =
∫
t1
t2
90% Ic
Ic
tf
Eoff =
t2
, t
10% Vce
Ic
td(off)
f
t1
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
E
, t
, t
off
d(off)
f
trr
10% Irr
DIODE RECOVERY
WAVEFORMS
Erec =
t3
t4
Ic
t2
Vce ie dt
Ic
tx
10% Vcc
Vpk
DIODE REVERSE
RECOVERY ENERGY
Irr
5% Ic
Qrr =
∫
Vce ic dt
∫
t1
∫
t4
Vd id dt
t3
t1+5µS
trr
id dt
tx
Vcc
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Refer to Section D for the following:
Appendix D: Section D - page D-6
Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14
Defining Eon, t
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
d(on)
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
, t
r
Defining E
, trr, Qrr, I
rec
rr
C-970
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