Page 1
PD - 5.026
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CPV362MF
IGBT SIP MODULE
Features
1
Fast IGBT
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
Q1
3
Q2
6
D1 D3 D5
Q3
9
D2 D4 D6
Q4
12
7 13 19
Q5
15
10 164
Q6
18
Output Current in a Typical 5.0 kHz Motor Drive
4.6 A
per phase (1.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 8.8
IC @ TC = 100°C Continuous Collector Current, each IGBT 4.8
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 3.4
I
FM
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 26 A
Clamped Inductive Load Current 26
Diode Maximum Forward Current 26
Gate-to-Emitter Voltage ±20 V
Isolation Voltage, any terminal to case, 1 min. 2500 V
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m)
RMS
Thermal Resistance
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction — 5.5
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction — 9.0 °C/W
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1 —
θCS
Wt Weight of module 20 (0.7) — g (oz)
Parameter Typ. Max. Units
Revision 1
C-141
Page 2
CPV362MF
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.6 1.8 IC = 4.8A VGE = 15V
— 2.0 — V IC = 8.8A See Fig. 2, 5
— 1.7 — IC = 4.8A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.9 5.0 — S VCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V
Total Gate Charge (turn-on) — 16 21 IC = 9.0A
Gate - Emitter Charge (turn-on) — 2.4 3.4 nC VCC = 400V
Gate - Collector Charge (turn-on) — 7.6 10 See Fig. 8
Turn-On Delay Time — 24 — TJ = 25°C
Rise Time — 13 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 160 270 VGE = 15V, RG = 50Ω
Fall Time — 310 600 Energy losses include "tail" and
Turn-On Switching Loss — 0.22 — diode reverse recovery
Turn-Off Switching Loss — 0.40 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 0.62 1.04
Turn-On Delay Time — 25 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 18 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 210 — VGE = 15V, RG = 50Ω
Fall Time — 600 — Energy losses include "tail" and
Total Switching Loss — 1.07 — mJ diode reverse recovery
Input Capacitance — 340 — VGE = 0V
Output Capacitance — 63 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 5.9 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.
— 55 90 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current — 3.5 50 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
During t
b
— 210 — TJ = 125°C 17
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-142
Pulse width 5.0µs,
single shot.
Page 3
CPV362MF
f, Frequ ency (kH z)
Load C urrent (A)
Total Output Power (kW)
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltage (V)
C
I , Collector-to-Emitter Current (A)
,
GE
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8
6
4
T = 90°C
C
2
T = 125°C
J
Power Factor = 0.8
Modulation Depth = 0.8
V = 60% of Rated Voltage
CC
0
0.1 1 10 100
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
T = 25°C
J
T = 150°C
10
J
100
T = 25°C
J
2.5
1.9
1.2
0.6
0
T = 150°C
J
S
1
0.1
0.1 1 10
V
Fig. 2 - Typical Output Characteristics
V = 15V
G E
20µs P ULSE WIDTH
itt
C-143
10
V = 100V
CC
1
5 10 15 20
V
Gate-to-Em itter Voltage (V)
5µs PULSE WID T H
Fig. 3 - Typical Transfer Characteristics
Page 4
CPV362MF
t , Rectangular P ulse Duration (sec)
1
thJC
Thermal R espon se (Z )
Maximum DC Collector Current (A)
, Case Temperature (°C)
C
, Case Temperature (°C)
C
CE
V , Collector-to-Emitter Voltage (V)
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16
12
8
4
0
25 50 75 100 125 150
V = 15 V
G E
T
Fig. 4 - Maximum Collector Current vs.
Case Temperature
10
4.0
V = 15V
G E
80 µs PULSE WIDTH
3.5
3.0
2.5
2.0
1.5
1.0
-6 0 -40 -20 0 20 4 0 60 8 0 100 12 0 140 160
I = 18A
C
I = 9.0A
C
I = 4.5A
C
T
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
D = 0 .5 0
1
0.0 2
0.0 1
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
S IN GLE PULSE
(T H E R M AL R ES PO N S E )
C-144
P
D M
t
1
t
Notes:
1. Duty fac tor D = t / t
2. Pe a k T = P x Z + T
J
DM
2
1
thJC
2
C
Page 5
CPV362MF
Total Switching Losses (mJ)
W
, Case Temp era ture (°C)
Total Switching Losses (mJ)
CE
C, Capacitance (pF)
, Collector-to-Em
er Voltage (V)
GE
V , Gate-to-Emitter Voltage (V)
, Total Gate Charge (nC)
g
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700
600
500
400
300
200
100
0
1 10 100
V
V = 0V, f = 1MHz
GE
C = C + C , C SHORTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
itt
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.36
V = 480V
CC
V = 15V
G E
T = 25°C
C
1.34
I = 9.0A
C
20
V = 400V
CE
I = 9.0A
C
16
12
8
4
0
0 4 8 12 16 20
Q
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R = 50
V = 15V
V = 480V
G
GE
CC
Ω
I = 18A
C
1.32
1.30
1.28
1.26
1.24
20 30 40 50 60
Fig. 9 - Typical Switching Losses vs. Gate
R , Ga te Resis tan ce ( )
G
Ω
Resistance
C-145
I = 9.0A
C
1
0.1
-6 0 -40 -20 0 20 40 6 0 80 100 120 140 16 0
T
C
I = 4.5A
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
Page 6
CPV362MF
Total Switching Losses (mJ)
, Collector-to-Em
er Current (A)
C
CE
,
I , Colle ctor-to-E m itter Cu rrent (A )
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4.0
R = 5 0
T = 150°C
V = 480V
V = 15V
3.0
2.0
1.0
0.0
4 8 12 16 2 0
G
C
CC
G E
Ω
I
C
itt
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
V = 20V
G E
GE
T = 125°C
J
S AFE OPE RA TING AREA
10
1
1 10 100 1000
V
C olle ctor-t o-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
F
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
Instantaneous Forward Current - I (A)
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V (V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-146
Page 7
CPV362MF
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100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 16A
F
60
rr
t - (ns)
40
I = 4.0A
F
20
0
100 1000
di /dt - (A/µs)
f
I = 8.0A
F
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
V = 200V
R
T = 125°C
J
T = 25°C
J
400
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 16A
10
IRRM
I - (A)
I = 8.0A
F
1
100 1000
F
di /dt - (A/µs)
f
I = 4.0A
F
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
300
RR
Q - (nC)
200
100
0
100 1000
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
I = 8.0A
F
I = 16A
F
di /dt - (A/µs)
I = 4.0A
1000
di(rec)M/dt - (A/µs)
I = 4.0A
F
100
f
100 1000
F
I = 8.0A
F
I = 16A
F
di /dt - (A/µs)
f
(rec)M
/dt vs. dif/dt
C-147
Page 8
CPV362MF
t
2
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Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, E
off(diode)
, trr, Qrr, Irr, t
d(on)
, tr, t
d(off)
, t
f
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
GATE VOLTAGE D.U.T.
Vcc
10% +Vg
10% Ic
td(on)
Vce
tr
t1
90% Ic
5% Vce
+Vg
DUT VOLTAGE
AND CURRENT
Ipk
Ic
t2
Vce ie dt
Eon =
∫
t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, t
d(on)
, t
r
90% Vge
+Vge
Vce
10% Vce
Ic
td(off)
t1
E
Ic
tx
10% Vcc
Vpk
DIODE REVERSE
RECOVERY ENERGY
Irr
, t
off
d(off)
t3
90% Ic
Ic
5% Ic
tf
t1+5µS
Vce ic dt
Eoff =
∫
t1
, t
f
trr
10% Irr
DIODE RECOVERY
WAVEFORMS
Erec =
t4
Qrr =
∫
∫
t4
Vd id dt
t3
trr
id dt
tx
Vcc
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
, trr, Qrr, I
rec
rr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Package Outline 5 - IMS-2 (13-pin) Section D - page D-14
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
C-148
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