Datasheet CPH6801 Datasheet (SANYO)

Page 1

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

MOSFET : P-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

DC/DC Converter Applications

Ordering number:EN6419

CPH6801

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse recovery time and low forward voltage, therefore enabling high-density mounting.

· Each device incorporated in the CPH6801 is equivalent with the 2SJ560 and the SBS004, respectively.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

]TEFSOM[

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 521+ot55–

]DBS[

egatloVesreveRkaePevititepeRV

egatloVegruSesreveRkaePevititeper-noNV

tnerruCtuptuOegarevAI

tnerruCegruSI

erutarepmeTnoitcnuJjT 521+ot55–

erutarepmeTegarotSgtsT 521+ot55–

SSD SSG

Mounted on a ceramic board (600mm2×0.8mm)

MRR MSR

MSF

Package Dimensions

unit:mm

2172

[CPH6801]

1.6 0.60.6

0.9

0.7 0.2

0.4

2.9

0.95

WP ≤ elcycytud,sµ01 ≤ %14–A

elcyc1,evaweniszH05 01A

0.15

0.2

0.05

2.8

1 : Gate 2 : Source 3 : Anode 4 : Drain (Cathode Common) 5 : Drain (Cathode Common) 6 : Drain (Cathode Common) SANYO : CPH6

02–V 01±V 1–A

9.0W

˚C ˚C

51V 51V 1A

˚C ˚C

31000TS (KOTO) TA-2492 No.6419–1/5

Page 2

CPH6801

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

]TEFSOM[

egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

]DBS[

egatloVesreveRV egatloVdrawroF

tnerruCesreveRI

ecnaticapaClanimretretnICV

emiTyrevoceResreveRt

ecnatsiseRlamrehTa-jhtR 011

Marking : QB

SSD)RB(

SSD

SSG

)ffo(VSDI,V01–=

1)no(IDV,Am005–=

2)no(IDV,Am003–=

)no(d

)ffo(d

IRAm1=51V

VF1IFA5.0=03.053.0V VF2IFA1=53.004.0V

VRV6= 005Aµ

IFI=

V,Am1–=

0=02–V

V,V02–=

SD SG

SD SD SD

0=01–Aµ

V,V8±=

0=01±Aµ

Am1–=4.0–4.1–V

D D

V,A0.1–=

Am005–=0.14.1S

V4–=024055mΩ

V5.2–=036098mΩ

zHM1=f,V01–=001Fp zHM1=f,V01–=06Fp zHM1=f,V01–=52Fp

tiucriCtseTdeificepseeS01sn tiucriCtseTdeificepseeS52sn tiucriCtseTdeificepseeS72sn tiucriCtseTdeificepseeS23sn I,V01–=

I,V01–=

0=9.0–5.1–V

elcyczHM1=f,V01=24Fp

sgnitaR

nimpytxam

A0.1=5Cn

A0.1=1Cn

.tiucriCtseTdeificepseeS,Am001= 51sn

tinU

˚C/WMounted on a ceramic board (600mm2×0.8mm)

Electrical Connection (Top view)

Cathode Common

GSA

Switching Time Test Circuit trr Test Circuit

[MOSFET] [SBD]

VDD=--10V

--4V

PW=10µs D.C.≤1%

P.G

50Ω

ID=--500mA

RL=20Ω

OUT

CPH6801

Duty≤10%

50Ω 100Ω 10Ω

10µs

--5V

100mA100mA

10mA

No.6419–2/5

Page 3

--1.6

--1.4

--1.2

–A

--1.0

--0.8

--0.6

Drain Current, I

--0.4

--0.2

1000

900

800

–mΩ

700

(on)

ID=--300mA

600

500

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0 --1 --2 --3 --4 --5 --6

--8.0V

--0.2

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

Gate-to-Source Voltage, V

7 5

fs|–S

3 2

1.0 7 5

3 2

Forward Transfer Admittance, |

0.1

--0.01

5 3

100

7 5

3 2

Switching Time, SW Time – ns

5 3

357

23 57

Ta=--25

Drain Current, I

--0.1

Drain Current, ID–A

-- V

[MOSFET]

--3.0V

--6.0V

--10.0V

--4.0V

--2.5V

--2.0V

VGS=--1.5V

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

IT00780

[MOSFET]

Ta=25°C

--500mA

--7 --8 --9 --10

–V

yfs -- I

IT00782

[MOSFET]

VDS=--10V

°C

75°C

23 57 23 57

--0.1

SW Time -- I

--1.0

–A

IT00784

[MOSFET]

VDD=--10V VGS=--4V

td(on)

td(off)

23 57 23 5

--1.0

IT00786

CPH6801

--10

--3.0

VDS=--10V

--2.5

-- V

°C

--2.0

–A

--1.5

--1.0

Ta=--25

75°C

Drain Current, I

--0.5

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0

1000

900

800

–mΩ

700

(on)

600

500

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

- -60

--10 7 5

3 2

–A

--1.0

7 5

3 2

--0.1 7

Forward Current, I

5 3

--0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

=- -2.5V

=- -300mA, V

=- -500mA, V

--40 --20 0 20 40 60 80 100 120 160140

Ambient Temperature, Ta – ˚C

-- V

°C

25°C

Ta=75

--25°C

=- -4.0V

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss – pF

1000

100

Ciss, Coss, Crss -- V

7 5

3 2

7 5

3 2

010--2

--4 --6

--8 --20--10 --12 --14 --16 --18

Ciss

Coss

Crss

Drain-to-Source Voltage, VDS–V

[MOSFET]

25°C

IT00781

[MOSFET]

IT00783

[MOSFET]

= 0

IT00785

[MOSFET]

f=1MHz

IT00787

No.6419–3/5

Page 4

CPH6801

--10

--9

--8

–

--7

--6

--5

--4

--3

--2

Gate-to-Source Voltage, V

--1 0

1.2

1.0

–W

0.9

0.8

0.6

0.4

0.2

VDS=--10V ID=--1A

VGS -- Qg

Total Gate Charge, Qg – nC

-- Ta

Mounted on a ceramic board (600mm

Allowable Power Dissipation, P

0020 40

100

7 5

3 2

–mA

5 3

1.0 7 5

3 2

0.1

Reverse Current, I

7 5

3 2

0.01 0

1000

7 5

3 2

100

7 5

3 2

7 5

Interterminal Capacitance, C – pF

1.0

1.0 10

23 57 23

Ta=125

-- V

80 100 120

°C

Ambient Temperature, Ta – ˚C

100

75°C

50°C

25°C

Reverse Voltage, VR–V

C -- V

Reverse Voltage, VR–V

°C

[MOSFET]

5.03.0 4.01.0 2.0 4.52.5 3.50.5 1.5

IT00788

[MOSFET]

×0.8mm)

140 160

IT00789

[SBD]

15510

IT00623

[SBD]

f=1MHz

--10 7

=--4.0A

3 2

=--1.0A

--1.0

–A

3 2

--0.1 7

Drain Current

5 3

--0.01

--0.1

5 3

1.0

–A

5 3

0.1 7

Forward Current, I

3 2

0.01

Operation in this area is limited by RDS(on).

Ta=25°C Single pulse

Mounted on a ceramic board (600mm2×0.8mm)

23 57 23 57 23 5

Drain-to-Source Voltage, VDS–V

100°C

0 0.3 0.4 0.50.1 0.2

Forward Voltage, VF–V

0.8

⁄Rectangular wave θ=60°

-- W

0.7

¤Rectangular wave θ=120° ‹Rectangular wave θ=180°

(AV)

0.6

›Sine wave θ=180°

0.5

0.4

0.3

0.2

0.1

Average Forward Power Dissipation, P

0.2 0.4 0.6 0.8

Average Forward Current, I

A S O

100ms

DC operation

--1.0 --10

-- V

°C

Ta=125

50°C

°C

PF(AV) -- I

⁄

Current waveform 50Hz sine wave

¤

Rectangular wave

Sine wave

-- t

[MOSFET]

100µs

1ms

10ms

25°C

‹

›

360°

180°

360°

1.0 1.2 1.4

-- A

IT00790

[SBD]

IT00622

[SBD]

IT00624

[SBD]

20ms

(Peak) – A

Surge Forward Current, I

IT00625

0.01

23 7

52 237

0.1

Time, t – s

1.0

IT00626

No.6419–4/5

Page 5

CPH6801

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.

PS No.6419–5/5