Datasheet CPH6701 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
PNP Epitaxial Planar Silicon Transistor
Schottky Barrier Diode
DC/DC Converter Applications
Ordering number:ENN6007A
CPH6701
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2.9
0.15
Features
· Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
· The CPH6701 is formed with two chips, one being equivalent to the CPH3106 and the other the SBS001, encapsulated in one package.
· Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 521+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCtuptuOegarevAI
tnerruCegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking : PA
OBC OEC OBE
C
PC
B
Mounted on a ceramic board (600mm2×0.8mm)
C
MRR MSR
O
MSF
Package Dimensions
unit:mm
2153
[CPH6701]
5
6
1
elcyc1,evaweniszH05 5A
4
23
0.95
2.8
1.6 0.60.6
1 : Emitter 2 : Base 3 : Anode
0.9
0.7 0.2
4 : Common (Collector, Cathode)
0.4
5 : Common (Collector, Cathode) 6 : Common (Collector, Cathode) SANYO : CPH6
0.2
0.05
51–V 21–V 5–V 3–A 5–A 006–Am
3.1W
˚C ˚C
11V 51V 005Am
˚C ˚C
80300TS (KOTO) TA-2852/61899TS (KOTO) TA-1524 No.6007–1/5
Page 2
Electrical Characteristics at Ta = 25˚C
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]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTFFO-nruTt
]iD[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 69
V
OBC OBE
hEF1VECI,V2–= hEF2VECI,V2–=
T
no gts
f
R F
R
rr
BC
V
BE
V
EC BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
C
I
R
I
F
VRV6= 002Aµ
R
IFI=
CPH6701
sgnitaR
nimpytxam
I,V21–=
0=1.0–Aµ
E
I,V4–=
0=1.0–Aµ
C
A5.0–=
C
A3–=
C
I,V2–=
A5.0–=
C
zHM1=f,V01–=
I,A5.1–=
Am03–=
B
I,A5.1–=
Am03–=58.0–2.1–V
B I,Aµ01–=
0=51–V
E
R,Am1–=
=∞ 21–V
EB
I,Aµ01–=
0=5–V
C
Aµ004=11V
Am005=4.054.0V
R
.tiucriCtseTdeificepseeS03sn .tiucriCtseTdeificepseeS09sn .tiucriCtseTdeificepseeS01sn
zHM1=f,V01=05Fp
.tiucriCtseTdeificepseeS,Am001= 01sn
002065 07
082zHM 63Fp 011–561–Vm
tinU
˚C/WMounted on a ceramic board (600mm2×0.8mm)
Electrical Connection
654
1
2 3
A11501
Switching Time Test Circuit
(TR) (Di)
PW=20µs D.C.≤1%
INPUT
50Ω
–20IB1=20IB2=IC=–1.5A
IB1 IB2
R
V
R
220µF 470µF
VBE=5V
OUTPUT
B
+
R
+
L
Duty≤10%
10µs
VCC=–5V
A11502
50Ω 100Ω 10Ω
–5V
100mA100mA
t
rr
10mA
A11503
No.6007–2/5
Page 3
CPH6701
-2.0
-1.8
-1.6
–A
-1.4
C
-1.2
-1.0
-0.8
-0.6
Collector Current, I
-0.4
-0.2 0
–16mA
0 -0.2 -0.4 -0.6 -0.8 -1.0
IC-
Collector-to-Emitter Voltage, VCE–V
-5
VCE=–2V VCE=–2V
-4
IC-
–A
C
-3
-2
Collector Current, I
-1
–14mA
V
CE
–12mA
[TR]
–10mA
–8mA
–6mA
–4mA
–2mA
=
I
B
-200
-180
-160
–A
-140
C
-120
-100
-80
-60
Collector Current, I
-40
0
-20 0
0-1-2-3-4-5
IC-
V
CE
–0.8mA
Collector-to-Emitter Voltage, VCE–V
°C
hFE-
25°C
V
BE
°C
Ta=75
[TR]
°C
°C
25
–25
1000
7 5
Ta=75
3
–25
FE
2
100
7 5
DC Current Gain, h
3 2
°C
I
C
[TR]
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
I
=0
B
[TR]
0
0 0.2 0.4 0.6 1.00.8
Base-to-Emitter Voltage, VBE–V
-1000 7 5
3
–mV
2
-100 7
CE(sat)
5 3
2
-10 7 5
3
Collector-to-Emitter
Saturation Voltage, V
2
-1.0
23 57 23 57 23 57
-0.01 -0.1 -1.0 -10
VCE(
sat
)
-
I
C
Ta=75
–25
[TR]
=50
/ I
I
B
C
°C
°C
25
°C
Collector Current, IC–A
-
VCE(
-1000 7 5
3 2
–mV
-100 7
CE(sat)
5 3
2
-10 7 5
3
Collector-to-Emitter
Saturation Voltage, V
2
-1.0
2 3 57 2 3 57 2 3 57
-0.01 -1.0 -10-0.1 -0.1 -1.0-0.01
sat
I
)
C
°C
Ta=75
[TR]
=20
/ I
I
B
C
°C
25
–25°C
Collector Current, IC– A Collector Current, IC–A
10
-0.01 -0.1 -1.0 -10
222357 357 357
Collector Current, IC–A
-10 7 5
–V
3 2
BE(sat)
-1.0 7 5
3 2
Base-to-Emitter
Saturation Voltage, V
-0.1
-0.01 -0.1 -1.0 -10
VBE(
)
-
sat
222357 357 357
I
C
–25
Ta=75
°C
°C
Collector Current, IC–A
1000
– MHz
T
100
Gain-Bandwidth Product, f
fT-
7 5
3 2
7 5
3 2
10
7 5
227357352357
I
C
[TR]
=50
/ I
I
B
C
°C
25
[TR]
VCE=–2V
No.6007–3/5
Page 4
1000
7 5
3 2
100
7 5
3 2
10
7 5
Output Capacitance, Cob – pF
3 2
1.0
1.6
1.4
1.3
1.2
–W
C
1.0
0.8
0.6
0.4
Collector Dissipation, P
0.2
0
020
3 2
1.0 7 5
3 2
–mA
R
0.1 7 5
3 2
0.01 7 5
Reverse Current, I
3 2
0.001 7
14
12
10
(Peak) – A
S
8
Cob
-
V
CB
22357 35 2357
-1.0 -10-0.1 -10
Collector-to-Base Voltage, VCB–V
PC-
Ta
Mounted on a ceramic board (600mm
2
×0.8mm)
40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IR-
V
R
°C
Ta=125
°C
100
°C
75
°C
50
°C
25
6 8 10 12 14420
Reverse Voltage, VR–V
IS-
t
Current waveform 50Hz sine wave
1s
20ms
CPH6701
f=1MHz
[SBD]
[SBD]
t
[TR]
[TR]
-10 7
I
CP
5
I
C
3 2
–A
C
-1.0 7 5
3 2
-0.1
Collector Current, I
7
Ta=25°C
5
Single pulse
3
Mounted on a ceramic board(600mm
2
23 57 2 3 57 2
A S O
100ms
DC operation
-1.0
10ms
1ms
2
×0.8mm)
500µs
Collector-to-Emitter Voltage, VCE–V
–A
0.1
F
0.01
Forward Current, I
7 5
3 2
7 5
3 2
7 5
3 2
Ta=125
IF-
°C
°C
75
V
F
°C
°C
25
–25
0.3 0.4 0.5 0.60.20.10
Forward Voltage, IF–V
C
-
V
R
f=1MHz
Interterminal Capacitance, C – pF
100
5
3
2
7 5
3
2
10
7
532753
1.0 10
Reverse Voltage, VR–V
[TR]
[SBD]
[SBD]
2
6
4
2
Surge Forward Current, I
0
7
2753
0.01 0.1
275323
1.0
Time, t – s
No.6007–4/5
Page 5
CPH6701
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice.
PS No.6007–5/5
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