Datasheet CPH5608 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6442A

CPH5608

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : FH

SSD
SSG

D

PD

D

SSD
SSG

R

)no(SD

R

)no(SD

Package Dimensions

unit:mm

2168

345

0.40.95

0.4

[CPH5608]

2.8

1.6 0.60.6

0.2

0.9

0.7

0.15

0.2

0.05

1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5

sgnitaR

nimpytxam

Continued on next page.

001V
01±V

4.0A

9.0W

2.9

12

WP ≤ elcycytud,sµ01 ≤ %16.1A

Mounted on a ceramic board (600mm2×0.8mm) 1unit

I

V,Am1=

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

SD
SG
SD

SD
SD
SD

0=001V

SG

V,V001=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=5.05.1V

D

Am002=025057Sm

D
V,Am002=

V4=5.23.3

SG

V,Am001=

V5.2=7.28.3

SG

zHM1=f,V02=05Fp
zHM1=f,V02=51Fp
zHM1=f,V02=4Fp

˚C
˚C

tinU

Ω
Ω

60100TS (KOTO) TA-2881 No.6442-1/4

CPH5608

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,Am004=

SG

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn

I,V01=

D

I,V01=

D

I,V01=

D

0=0.12.1V

sgnitaR

nimpytxam

Am004=5Cn
Am004=1Cn
Am004=2Cn

tinU

Electrical Connection

G1 G2

0.40

0.35

0.30

–A

0.25

D

0.20

0.15

Drain Current, I

0.10

D1

S

D2

6.0V

8.0V

10.0V

I

D

(Top view)

-- V

DS

4.0V

3.0V

2.5V

VGS=1.5V

Switching Time Test Circuit

V

IN
4V
0V

V

IN

PW=10µs
D.C.≤1%

P.G

0.40

0.35

0.30

–A

0.25

D

0.20

0.15

Drain Current, I

0.10

VDS=10V

G

50Ω

VDD=50V

I

-- V

D

ID=200mA

RL=250Ω

D

CPH5608

S

GS

25°C

V

OUT

°C

--25

0.05

00

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source Voltage, VDS–V

5.0

4.5

4.0

– Ω

3.5

ID=0.1A

3.0

DS(on)

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
00

012345678910

RDS(on) -- V

0.2A

Gate-to-Source Voltage, V

GS

GS

–V

IT01043

Ta=25°C

IT01045

0.05

00

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Ta=75°C

Gate-to-Source Voltage, VGS–V

5

– Ω

4

DS(on)

3

2

Static Drain-to-Source

On-State Resistance, R

1

--60 --40 --20 0 20 40 60 80 100 120 160140

RDS(on) -- Ta

=2.5V

GS

=0.1A, V

D

I

I

=0.2A, V

D

GS

=4.0V

Ambient Temperature, Ta – °C

IT01044

IT01046

No.6442-2/4

10

7
5

fs|–S

y

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57 23 57

yfs -- I

Drain Current, ID–A

t

f

d

r

(off)

SW Time -- I

Switching Time, SW Time – ns

1000

100

1.0

7
5

3
2

7
5

3
2

10

7
5

3
2

t

td(on)

t

23 57 23 57

Drain Current, ID–A

10

VDS=10V

9

ID=0.4A

V

8

–

GS

7

6

5

4

3

2

Gate-to-Source Voltage, V

1
0

012345

VGS -- Qg

Total Gate Charge, Qg – nC

1.0

0.9

–W

0.8

D

Mounted on a ceramic board (600mm

PD -- Ta

D

Ta=--25

75°C

D

VDS=10V

°C

25°C

IT01047

VDD=50V
VGS=4V

IT01049

IT01051

CPH5608

1.00.10.01

1.00.10.01

1.0

VGS=0

7
5

3
2

–A

0.1

F

7
5

3
2

0.01
7

Forward Current, I

5
3

2

0.001

0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Diode Forward Voltage, VSD–V

1000

7
5

3
2

100

7
5

3
2

10

7

Ciss, Coss, Crss – pF

5
3

2

1.0
0 5 10 15

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

5
3

IDP=1.6A

2

1.0

7

ID=0.4A

5
3

–A

2

D

,I

0.1

7
5

3

Operation in this

2

area is limited by RDS(on).

0.01

Drain Current

7

Ta=25

°C

5

Single pulse

3

1unit

2

Mounted on a ceramic board (600mm

0.001

0.1

Drain-to-Source Voltage, VDS–V

IF -- V

Ciss

Coss

Crss

A S O

DC operation

SD

Ta=75°C

--25

°C

25°C

DS

20 25 30

1ms

10ms

100ms

2

×0.8mm)

10 1001.0

IT01048

f=1MHz

IT01050

µs

100

2323 5723 5723 57

IT01052

0.6

0.4

2

×0.8mm) 1unit

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – °C

IT01053

No.6442-3/4

CPH5608

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6442-4/4