Datasheet cpc5602 Datasheet

Page 1
CPC5602
N Channel Depletion Mode FET
Parameter Rating Units
Drain-to-Source Voltage (VDS) 350 V
Max On-Resistance (R
Max Power 2.5 W
)14
on-max
Ω
Features
• 350V Drain-to-Source Voltage
• Low On-resistance: 8 Ohms (Typical)
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™ Data Access Arrangement (DAA)
• Telecommunications
Description
The CPC5602 is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telecommunications.
One of the primary applications for the CPC5602 is as a linear regulator/hook switch for the LITELINK family of Data Access Arrangements (DAA) Devices CPC5610A, CPC5611A, CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8Ω, a drain-to-source voltage of 350V, and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal­induced secondary breakdown.
Ordering Information
Part Number Description
CPC5602C N-Channel Depletion Mode FET, SOT-223
Package (80/tube)
CPC5602CTR N-Channel Depletion Mode FET, SOT-223
Package Tape and Reel (1000/reel)
Pb
DS-CPC5602-R05
RoHS
2002/95/EC
e
www.clare.com
www.clare.com
Package Pinout
D
4
1
23
D S
G
Pin Number Name
1GATE
2 DRAIN
3 SOURCE
4 DRAIN
1
Page 2
CPC5602
Absolute Maximum Ratings
Parameter Min Max Units
Drain-to-Source Voltage (VDS) 350 - V
Total Package Dissipation - 2.5 W
Operational Temperature -40 +85
Storage Temperature -40 +125
o
C
o
C
Electrical absolute maximum ratings are at 25ºC.
Electrical Characteristics (@25oC unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Units
Gate-to-Source Off Voltage V
Drain-to-Source Leakage Current I
Drain Current
On Resistance R
Gate Leakage Current I
Gate Capacitance C
GS(off)
DS(off)
I
D
DS(on)
GSS
ISS
ID= 2µA, VDS=10V, VDS=100V -2 - -3.6 V
VGS= -5V, VDS=190V - - 20 nA
VGS= -5V, VDS=350V - - 1 μA
VGS= -2.7V, VDS=5V, VDS=50V - - 5 mA
VGS= -0.57V, VDS=5V 130 - - mA
VGS= -0.35V, IDS=50mA - 8 14
VGS=10V, VGS=-10V - - 0.1 μA
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
VDS= VGS=0V - - 300 pF
Ω
Thermal Characteristics
Parameter Symbol Conditions Min Typ Max Units
Thermal Resistance R
θJC
- - - 14 ºC/W
2
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R05
Page 3
MANUFACTURING INFORMATION
CPC5602
Soldering
For proper assembly, the component must be processed in accordance with the current revision of IPC/JEDEC standard J-STD-020. Failure to follow the recommended guidelines may cause permanent damage to the device resulting in impaired performance and/or a reduced lifetime expectancy.
MECHANICAL DIMENSIONS
SOT-223 Package
1.75 ± 0.10
(0.069 ± 0.004)
3.50 ± 0.20
(0.138 ± 0.008)
1.75 Nom
(0.069 Nom)
1.60 ± 0.10
(0.063 ± 0.004)
0.051 +0.076/-0.051
(0.002 +0.003/-0.002)
0.75 ± 0.04
(0.029 ± 0.002)
6.50 ± 0.20
(0.256 ± 0.008)
3.05 ± 0.10
(0.120 ± 0.004)
2.30 ± 0.10
(0.0905 ± 0.004)
7.00 ± 0.38
(0.276 ± 0.015)
1.85 MAX
(0.073 MAX)
Washing
Clare does not recommend ultrasonic cleaning or the use of chlorinated solvents.
RoHS
Pb
2002/95/EC
e
Recommended PCB Land Pattern
0.31 ± 0.07
(0.012 ± 0.003)
0.80 ± 0.127
(0.031 ± 0.005)
6.20
(0.244)
2.30
(0.0905)
1.90
(0.075)
3.15
(0.124)
0.95
(0.0374)
Dimensions
(inches)
1.90
(0.075)
mm
7” Tape and Reel Packaging for the SOT-223 Package
177.8 Dia (7.00 Dia)
=7.5 ± 0.1
W=16.0 ± 0.3
(0.630 ± 0.012)
Dimensions
mm
(inches)
Embossed
Carrier
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
Embossment
KO=1.956 MAX.
(0.077 MAX.)
B
O
(0.295 ± 0.004)
=7.0 ± 0.1
A
O
(0.276 ± 0.004)
P=8.0 ± 0.1
(0.315 ± 0.004)
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
For additional information please visit our website at: www.clare.com
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Ter ms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-CPC5602-R05
3
©Copyright 2008, Clare, Inc. All rights reserved. Printed in USA. 9/30/08
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