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CNX83A
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
DESCRIPTION
The CNX83A optically coupled isolator consists
of an infrared light emitting diode and a NPN silicon
photo transistor in a standard 6 pin dual in line
plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio (40% min)
l Low Saturation Voltage suitable for TTL
integrated circuits
l High BV
l High Isolation Voltage (5.3kV
(50V min)
CEO
RMS
,7.5kV
PK
)
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Signal transmission between systems of
different potentials and impedances
2.54
Dimensions in mm
7.0
6.0
1
2 5
6
3 4
1.2
7.62
6.62
4.0
7.62
3.0
13°
Max
3.0
0.5
3.35
0.5
0.26
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OPTION SM
SURFACE MOUNT
0.6
0.1
1.25
0.75
OPTION G
7.62
0.26
10.46
9.86
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Collector Current 50mA
CEO
CBO
ECO
50V
70V
6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB93049-AAS/A1
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ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Current (IR) 10 µA VR = 6V
Output Collector-emitter Breakdown (BV
) 50 V IC = 1mA
CEO
( Note 2 )
Collector-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 70 V IC = 100µA
CBO
) 6 V IE = 100µA
ECO
) 50 nA VCE = 10V
CEO
Coupled Current Transfer Ratio (IC / IF ) 0.4 10mA IF , 0.4V V
(Note 2) 1.5 10mA IF , 5V V
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
(SAT)
5300 V
ISO
7500 V
10
5x10
ISO
0.4 V 10mA I
RMS
PK
Ω V
See note 1
See note 1
= 500V (note 1)
IO
, 4mA I
F
Response Time (Rise), tr 2 7 µs VCC = 5V , IF = 10mA ,
Response Time (Fall), tf 2 8 µs R
= 75Ω
L
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
CE
CE
C
DB93049-AAS/A1
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Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
200
(mW)
C
150
100
50
Collector power dissipation P
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
(mA)
F
50
40
30
20
Forward current I
10
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
50
40
(mA)
C
30
50
30
20
20
Collector current I
10
0
0 2 4 6 8 10
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
0.28
CE(SAT)
0.24
0.20
IF = 10mA
IC = 4mA
0.16
0.12
0.08
0.04
0
Collector-emitter saturation voltage V
-30 0 25 50 75 100
Ambient temperature TA ( °C )
TA = 25°C
15
10
IF = 5mA
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
IF = 10mA
VCE = 0.4V
1.0
0.5
Relative current transfer ratio
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
Relative current transfer ratio
0.4
VCE = 0.4V
TA = 25°C
0
1 2 5 10 20 50
Forward current IF (mA)
DB93049-AAS/A1
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