Datasheet CNX39, CNX36, CNG39, CNX35, CNG36 Datasheet (ISOCM)

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CNG35, CNG36, CNG39
CNX35, CNX36, CNX39
OPTICALLY COUPLED ISOLATORS

Circuit
Features
Description
Absolute Maximum Ratings
Electro-optical Characteristics

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Circuit

Features

3120-4400 Volt Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package.
Working Voltage 2500 VDC

Description

The CNG/CNX Series are optically coupled isolators consisting of a Gallium Arsenide
infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual­in-line package. Surface Mount Option Available.

All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a
cumulative 0.65% AQL

Absolute Maximum Ratings (Ta=25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-To-Output Isolation Voltage:

Input Diode

Forward DC Current:
Reverse DC Voltage:
Peak Forward Current (1µs p.w.
300pps):
Power Dissipation:
Derate Linearly:

Output Transistor

Collector-Emitter Voltage:
Power Dissipation:

-55°C to +150°C

-55°C to +100°C
260°C for 10s, 1.6mm from case
3120-4400Vdc

100mA
5V
3A
200mW

1.33mW/°C above 25°C

30V
200mW

Optocoupler

Collector Cut-off Current (Dark) I
Isolation Voltage DC VIO:
Isolation Voltage AC (RMS) VIO:

CEW

:

200nA Max (Vcc=10V; work. volt.=2.5kV Diode;
If=0)

4.4kVMin

3.12kVMin

Package

Total Power Dissipation:
Derate Linearly:

250mW

3.3mW/°C above 25°C

Electro-optical Characteristics (Ta=25°C)

INPUT PARAMETER CONDITIONS MIN TYP MAX UNIT

VF Forward Voltage IF=10mA 1.5 V

IR Reverse Current VR=5V 10 µA

OUTPUT PARAMETER CONDITIONS MIN TYP MAX UNIT

Collector cut-off current (dark) VCE=10V 50 nA

I

CEO

V

V

Collector-Emitter Breakdown V

=10V, TA=70°C 10 µA

CE

=10V 20 nA

CB

(BR) CEO

30 V

Voltage

COUPLED PARAMETER CONDITIONS MIN TYP MAX UNIT

DC Current Transfer Ratio

IC/IF

CNG/CNX35 IF=10mA, VCE=5V 40 80 %

CNG/CNX36 63 125 %

CNG/CNX39 100 200 %

RIO

V

CE(SAT)

Input-to-Output Isolation
Resistance

Collector-Emitter Saturation
Voltage

VIO=500V, (note 1) 100 Gohm

I

=10mA,

F

IC=2.5mA

0.2 0.4 V

CIO Capacitance Input to Output f=1MHz (note 1) 0.6 pf

TR Output Rise Time

TON Output Turn-on Time

IF=10mA,
VCC=5.0V

R

=75ohm,

L

TA=25°C

2 4 µs

3 5.6 µs

TF Output Fall Time 2 3.5 µs

T

Output Turn-off Time 2.5 4.1 µs

OFF

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