Page 1
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMUT2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in an ULTRAmini™ surface
mount package, designed for small signal
general purpose and switching applications.
Marking Code is PC1.
CMUT2222A
ULTRAmini™ SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-523 CASE
Central
Semiconductor Corp.
TM
R1 ( 2 -October 2001)
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
75 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I
C
600 mA
Power Dissipation P
D
250 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=60V 10 nA
I
CBO
VCB=60V, TA=125°C 10 µA
I
EBO
VEB=3.0V 10 nA
I
CEV
VCE=60V, VEB=3.0V 10 nA
BV
CBO
IC=10µA 75 V
BV
CEO
IC=10mA 40 V
BV
EBO
IE=10µA 6.0 V
V
CE(SAT)
IC=150mA, IB=15mA 0.3 V
V
CE(SAT)
IC=500mA, IB=50mA 1.0 V
V
BE(SAT)
IC=150mA, IB=15mA 0.6 1.2 V
V
BE(SAT)
IC=500mA, IB=50mA 2.0 V
h
FE
VCE=10V, IC=0.1mA 35
h
FE
VCE=10V, IC=1.0mA 50
h
FE
VCE=10V, IC=10mA 75
h
FE
VCE=10V, IC=150mA 100 300
h
FE
VCE=1.0V, IC=150mA 50
h
FE
VCE=10V, IC=500mA 40
Page 2
LEAD CODE:
1) Base
2) Emitter
3) Collector
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-523
CMUT2222A
ULTRAmini™ SURFACE MOUNT
NPN SILICON TRANSISTOR
R1 ( 2 -October 2001)
ELECTRICAL CHARACTERISTICS: Continued
SYMBOL TEST CONDITIONS MIN MAX UNITS
f
T
VCE=20V, IC=20mA, f=100MHz 300 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz 8.0 pF
C
ib
VEB=0.5V, IC=0, f=1.0MHz 25 pF
h
ie
VCE=10V, I
C
=1.0mA, f=1.0kHz 2.0 8.0 kΩ
h
ie
VCE=10V, I
C
=10mA, f=1.0kHz 0.25 1.25 kΩ
h
re
VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10
-4
h
re
VCE=10V, IC=10mA, f=1.0kHz 4.0 x10
-4
h
fe
VCE=10V, IC=1.0mA, f=1.0kHz 50 300
h
fe
VCE=10V, IC=10mA, f=1.0kHz 75 375
h
oe
VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 µmhos
h
oe
VCE=10V, IC=10mA, f=1.0kHz 25 200 µmhos
rb’C
c
VCB=10V, IE=20mA, f=31.8MHz 150 ps
NF VCE=10V, I
C
=100µA, RS=1.0kΩ, f=1.0kHz 4.0 dB
t
d
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns
t
r
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ns
t
s
VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns
t
f
VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns
A
B
C
D
BOTTOM VIEW
E
F
G
12
H
3
I
R1
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