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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUD2836
and CMUD2838 types are ultra-high speed
silicon switching diodes manufactured by the
epitaxial planar process, in an epoxy molded
ULTRAmini™ surface mount package, designed
for high speed switching applications.
CMUD2836
CMUD2838
ULTRAmini
™
SURFACE MOUNT
DUAL HIGH SPEED SWITCHING
SILICON DIODE
SOT-523 CASE
Central
Semiconductor Corp.
TM
R1 ( 30-August 2001)
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
75 V
Average Forward Current I
O
200 mA
Peak Forward Current I
FM
300 mA
Power Dissipation P
D
250 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
B
VR
IR=100µA 75 V
I
R
VR=50V 100 nA
V
F
IF=10mA 1.0 V
V
F
IF=50mA 1.0 V
V
F
IF=100mA 1.2 V
C
T
VR=0, f=1 MHz 1.5 4.0 pF
t
rr
IR=IF=10mA, R
L
=100Ω, Rec. to 1.0mA 4.0 ns
The following configurations are available:
CMUD2836 DUAL, COMMOM ANODE MARKING CODE: 2CA
CMUD2838 DUAL, COMMON CATHODE MARKING CODE: 6CA
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Central
Semiconductor Corp.
TM
SOT-523 CASE - MECHANICAL OUTLINE
CMUD2836
CMUD2838
ULTRAmini
™
SURFACE MOUNT
DUAL HIGH SPEED
SWITCHING
SILICON DIODE
BOTTOM VIEW
R1 ( 30-August 2001)
CMUD2836 CMUD2838
A
B
E
F
G
C
12
D
3
I
H
R1
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