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CMPT6428
CMPT6429
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6428 and
www.centralsemi.com
CMPT6429 are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in
a surface mount package, designed for high gain
amplifier applications.
MARKING CODES: CMPT6428: C1K
CMPT6429: C1L
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL CMPT6428 CMPT6429 UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current IC 200 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, T
Thermal Resistance ΘJA 357 °C/W
60 55 V
CBO
50 45 V
CEO
6.0 V
EBO
-65 to +150 °C
stg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMPT6428 CMPT6429
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
V
CBO
I
V
CEO
I
V
EBO
BV
BV
V
V
V
hFE V
hFE V
hFE V
hFE V
fT V
Cob V
Cib V
IC=100µA 60 - 55 - V
CBO
IC=1.0mA 50 - 45 - V
CEO
CE(SAT)
CE(SAT)
BE(ON)
IC=10mA, IB=0.5mA - 0.20 - 0.20 V
IC=100mA, IB=5.0mA - 0.60 - 0.60 V
VCE=5.0V, IC=1.0mA 0.56 0.66 0.56 0.66 V
=30V - 10 - 10 nA
CB
=30V - 100 - 100 nA
CE
=5.0V - 10 - 10 nA
BE
=5.0V, IC=10µA 250 - 500 -
CE
=5.0V, IC=100µA 250 650 500 1250
CE
=5.0V, IC=1.0mA 250 - 500 -
CE
=5.0V, IC=10mA 250 - 500 -
CE
=5.0V, IC=1.0mA, f=100MHz 100 700 100 700 MHz
CE
=10V, IE=0, f=1.0MHz - 3.0 - 3.0 pF
CB
=0.5V, IC=0, f=1.0MHz - 8.0 - 8.0 pF
BE
R5 (1-February 2010)
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CMPT6428
CMPT6429
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPT6428: C1K
CMPT6429: C1L
www.centralsemi.com
R5 (1-February 2010)
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