Page 1
CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222AE
www.centralsemi.com
is an Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
♦ BV
SOT-23 CASE
♦ V
♦ h
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
♦
Collector-Base Voltage V
♦
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current IC 600 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, T
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
VCB=60V 10 nA
CBO
I
VCB=60V, TA=125°C 10 μA
CBO
I
VCE=60V, VEB=3.0V 10 nA
CEV
I
VEB=3.0V 10 nA
EBO
BV
♦
♦
♦
♦
♦
♦
♦
♦
♦
IC=10µA 100 145 V
CBO
BV
IC=10mA 45 53 V
CEO
BV
IE=10μA 6.0 V
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
hFE VCE=10V, IC=0.1mA 100 210
hFE VCE=10V, IC=1.0mA 100 205
hFE VCE=10V, IC=10mA 100 205
hFE VCE=1.0V, IC=150mA 75 150
hFE VCE=10V, IC=150mA 100 300
hFE VCE=10V, IC=500mA 60 130
fT VCE=20V, IC=20mA, f=100MHz 300 MHz
Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF
Cib VBE=0.5V, IC=0, f=1.0MHz 25 pF
♦ Enhanced specification
IC=150mA, IB=15mA 0.92 0.15 V
IC=500mA, IB=50mA 0.12 0.50 V
IC=150mA, IB=15mA 0.6 1.2 V
IC=500mA, IB=50mA 2.0 V
CBO
CEO
EBO
from 75V min to 100V min. (145V TYP)
CBO
from 1.0V max to 0.5V max. (0.12V TYP)
CE
from 40 to 60 min. (130 TYP)
FE
100 V
45 V
6.0 V
-65 to +150 °C
stg
R2 (1-February 2010)
Page 2
CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 kΩ
hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 kΩ
hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 X10
hre VCE=10V, IC=10mA, f=1.0kHz 4.0 X10
hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300
hfe VCE=10V, IC=10mA, f=1.0kHz 75 375
hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 μS
hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 μS
rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps
NF VCE=10V,IC=100μA, RS =1.0KΩ, f=1.0kHz 4.0 dB
td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns
tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ns
ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns
tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns
-4
-4
SOT-23 CASE - MECHANICAL OUTLINE
www.centralsemi.com
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C1PE
R2 (1-February 2010)
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