Datasheet CMF10120D Datasheet (Cree)

CMF10120D-Silicon Carbide Power MOSFET

Z-FeT

TM

MOSFET

N-Channel Enhancement Mode

VDS = 1200 V

I

R

= 24 A

D(MAX)

= 160mΩ

DS(on)

Features

Package

• High Speed Switching with Low Capacitances

• High Blocking Voltage with Low R

DS(on)

• Easy to Parallel and Simple to Drive

• Avalanche Ruggedness

• Resistant to Latch-Up

• Halogen Free, RoHS Compliant

Benets

TO-247-3

• Higher System Efciency

• Reduced Cooling Requirements

• Increased System Switching Frequency

Applications

• Solar Inverters

• High Voltage DC/DC Converters

• Motor Drives

• Switch Mode Power Supplies

Maximum Ratings (T

Symbol Parameter Value Unit Test Conditions Note

= 25˚C unless otherwise specied)

C

Part Number Package

CMF10120D TO-247-3

I

D

I

Dpulse

E

AS

E

AR

I

AR

V

GS

P

tot

TJ , T

T

M

Continuous Drain Current

Pulsed Drain Current 49 A

Single Pulse Avalanche Energy 1.2 J

Repetitive Avalanche Energy 0.8 J

Repetitive Avalanche Current 10 A

Gate Source Voltage -5/+25 V

Power Dissipation 134 W TC=25˚C Fig. 9

Operating Junction and Storage Temperature

stg

Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s

L

Mounting Torque

d

24

13

-55 to +135

1

8.8

lbf-in

VGS@20V, TC = 25˚C

A

VGS@20V, TC = 100˚C

Pulse width tP limited by T

TC = 25˚C

ID = 10A, VDD = 50 V, L = 20 mH

tAR limited by T

ID = 10A, VDD = 50 V, L = 15 mH

tAR limited by T

˚C

Nm

M3 or 6-32 screw

jmax

Fig. 10

Fig. 15

1 CMF10120D Rev. A

Electrical Characteristics (T

= 25˚C unless otherwise specied)

C

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

V

(BR)DSS

V

I

R

C

E

GS(th)

DSS

GSS

DS(on)

g

C

Drain-Source Breakdown Voltage 1200 V V

Gate Threshold Voltage

Zero Gate Voltage Drain Current

2.4 3.5

3.1 4.1 VDS = VGS, ID = 1.0 mA

1.8

2.3

0.5 50

5 150 VDS = 1200V, VGS = 0V, TJ = 135ºC

V

μA

= 0V, ID = 50μA

GS

VDS = VGS, ID = 0.5 mA

VDS = VGS, ID = 0.5 mA, TJ = 135ºC

VDS = VGS, ID = 1.0 mA, TJ = 135ºC

VDS = 1200V, VGS = 0V

Gate-Source Leakage Current 0.25 μA VGS = 20V, VDS = 0V

Drain-Source On-State Resistance

Transconductance

fs

Input Capacitance 928

iss

Output Capacitance 63

oss

Reverse Transfer Capacitance 7.5

rss

C

oss

Stored Energy 32 μJ Fig 14

oss

160 200

190 240 VGS = 20V, ID = 10A, TJ = 135ºC

4.2

3.9 VDS= 20V, IDS= 10A, TJ = 135ºC

VGS = 20V, ID = 10A

mΩ

VDS= 20V, IDS= 10A

S

VGS = 0V

pF

VDS = 800V

f = 1MHz

AC

V

= 25mV

Fig. 11

Fig. 3

Fig. 6

Fig. 13

t

d(on)v

t

d(off)V

R

t

Turn-On Delay Time 8.8

Fall Time 21

fv

Turn-Off Delay Time 38

Rise Time 34

rV

Internal Gate Resistance 13.6 Ω f = 1MHz, V

G

ns

VDD = 800V, VGS = 0/20V

ID = 10A

R

= 2.5Ω, RL = 40Ω

G(ext)

Timing relative to V

AC

= 25mV

DS

g. 17

Built-in SiC Body Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

V

t

I

rrm

Diode Forward Voltage

SD

Reverse Recovery Time 138 ns

rr

Reverse Recovery Charge 94 nC

rr

Peak Reverse Recovery Current 1.57 A

3.5

3.1 VGS = -2V, I

VGS = -5V, I

V

VGS = -5V, I VR = 800V, diF/dt= 100A/μs

=

5A, TJ = 25ºC

F

=

5A, TJ = 25ºC

F

=

10A, TJ = 25ºC

F

Fig. 22Q

Thermal Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

R

θJC

R

θCS

R

θJA

Thermal Resistance from Junction to Case 0.66 0.82

Case to Sink, w/ Thermal Compound 0.25

Thermal Resistance From Junction to Ambient 40

K/W Fig. 7

Gate Charge Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

Q

2 CMF10120D Rev. A

Gate to Source Charge 11.8

gs

Gate to Drain Charge 21.5

gd

Gate Charge Total 47.1

g

VDD = 800V, VGS = 0/20V

nC

ID =10A Per JEDEC24 pg 27

Fig.12

0

50

100

150

200

250

300

350

0 5 10 15 20 25 30 35 40 45 50

R

DS(on)

(mΩ)

ID(A)

VGS= 20 V

135oC

25

o

C

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0 25 50 75 100 125 150

Normalized R

DS(on)

TJ(oC)

VGS= 20 V

0

5

10

15

20

25

30

35

40

45

50

0 1 2 3 4 5 6 7 8 9 10 11 12

I

D

(A)

VDS(V)

0

5

10

15

20

25

30

35

40

45

50

0 1 2 3 4 5 6 7 8 9 10 11 12

I

D

(A)

VDS(V)

Typical Performance

0

100

200

300

400

500

600

700

800

10 12 14 16 18 20

R

DS(on)

(mΩ)

VGS(V)

ID= 10 A

T

J

= 25oC

T

J

= 135oC

0

5

10

15

20

25

30

0 2 4 6 8 10 12 14 16 18 20

I

D

(A)

VGS(V)

25oC

135oC

VD= 20 V

Figure 1. Typical Output Characteristics TJ = 25ºC

Figure 3.

Normalized On-Resistance vs. Temperature

Figure 2. Typical Output Characteristics TJ = 135ºC

Figure 4. On-Resistance vs. Drain Current

3 CMF10120D Rev. A

Figure 5. On-Resistance vs. Gate Voltage

Figure 6. Typical Transfer Characteristics

Typical Performance

100E-6

1E-3

10E-3

100E-3

1

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Z

thJC

(

o

C/W)

tp(s)

0.5

0.3

0.1

0.05

0.02

0.01

SinglePulse

DC:

0.1

1

10

100

1 10 100 1000

I

D

(A)

VDS(V)

Limited by R

DS(on)

DC

tp≤ 1 µs

tp= 10 µs

tp= 100 µs

tp= 1 ms

tp= 10 ms

0

20

40

60

80

100

120

140

160

0 25 50 75 100 125 150

P

D

(W)

TC(oC)

0

5

10

15

20

25

0 25 50 75 100 125 150

I

D

(A)

TC(oC)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

-75 -50 -25 0 25 50 75 100 125 150

V

GS(th)

(V)

TJ(oC)

ID= 0.5 mA

ID= 1 mA

-5

0

5

10

15

20

25

0 10 20 30 40 50

V

GS

(V)

Gate Charge (nC)

ID= 10 A VDD= 800 V

Figure 7. Transient Thermal Impedance (Junction - Case)

with Duty Cycle

Figure 9. Power Dissipation Derating Curve

Figure 8. Safe Operating Area

Figure 10. Continuous Current Derating Curve

Figure 11. Gate Threshold Voltage vs.

4 CMF10120D Rev. A

Temperature

Figure 12. Typical Gate Charge Characteristics

(25°C)

Typical Performance

1

10

100

1000

10000

0 20 40 60 80 100 120 140 160 180 200

Capacitance (pF)

VDS(V)

C

iss

C

oss

C

rss

1

10

100

1000

10000

0 100 200 300 400 500 600 700 800

Capacitance (pF)

VDS(V)

C

iss

C

oss

C

rss

0

5

10

15

20

25

30

35

40

0 100 200 300 400 500 600 700 800

E

oss

(µJ)

VDS(V)

0

500

1000

1500

2000

2500

0

1

2

3

4

5

6

7

8

9

10

11

0 0.001 0.002 0.003 0.004 0.005 0.006

V

DS

(V)

I

D

(A)

Time (sec)

I

D

V

DS

VGS= 0/20V V

DD

= 50V L = 20 mH E

AS

= 1.2 J

0

10

20

30

40

50

60

70

80

0 5 10 15 20 25

Time (nsec)

Externa l Gate Res istor ( Ω)

t

D(on)v

t

fv

t

rv

t

D(off)v

VGS= 0/20V V

DD

= 400V

R

L

= 40 Ω

I

D

= 10 A

T

A

= 25oC

0

10

20

30

40

50

60

70

80

90

0 5 10 15 20 25

Time (nsec)

Externa l Gate Res istor ( Ω)

t

D(on)v

t

fv

t

rv

t

D(off)v

VGS= 0/20V V

DD

=800V

R

L

= 80 Ω

I

D

= 10 A

T

A

= 25oC

Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS = 0V and f = 1 MHz

Figure 14. Typical C

Figure 16. Resistive Switching Times vs.

5 CMF10120D Rev. A

External RG at VDD = 400V, ID = 10A

Stored Energy

OSS

Figure 15. Typical Unclamped Inductive Switching

Waveforms Showing Avalanche Capability

Figure 17. Resistive Switching Times vs.

External RG at VDD = 800V, ID = 10A

Typical Performance

0

50

100

150

200

250

300

350

4 5 6 7 8 9 10 11

Switching Energy (µJ)

Peak Drain Curren t (A)

E

TOT,SW

E

OFF

E

ON

VGS= 0/20V R

G

= 15 Ω Tot

V

DD

= 800V L = 856 µH FWD: C4D05120A T

A

= 25oC

0

50

100

150

200

250

300

350

400

450

0 25 50 75 100 125 150

Switching Energy ( µJ)

TJ(oC)

E

TOT,SW

E

ON

E

OFF

VGS= 0/20V RG= 20 Ω Tot VDD= 800V L = 856 µH FWD: C4D05120A ID= 10 A

90%

10%

V

DS

V

GS

t

on

t

off

t

fv

t

d(on)v

t

d(off)v

t

rv

Figure 18. Clamped Inductive Switching Energy vs.

Drain Current (Fig. 20)

+

800V

-

42.3μf

Figure 20. Clamped Inductive Switching Waveform Test

856μH

Circuit

Figure 19. Clamped Inductive Switching Energy vs.

Junction Temperature (Fig 20)

C4D05120A 5A, 1200V SiC Schottky

CMF10120D

6 CMF10120D Rev. A

Figure 21. Switching Test Waveforms for Transition times

Test Circuit Diagrams and Waveforms

FOR OFFICIAL USE ONLY – Not Cleared for Open Release

t

Ic

856μH

+

800V

-

42.3μf

CMF10120D

tx

Vpk

Diode Reverse Recovery Energy

10% V

Irr

rr

cc

t1

10% Irr

Diode Recovery Waveforms

Erec=

t2

Qrr=

∫

t1

t2

id dt

trr

id dt

∫

tx

V

cc

Fig 22. Body Diode Recovery Test Fig 23. Body Diode Recovery Waveform

Fig 24. Unclamped Inductive Switching Test Circuit

ESD Ratings

ESD Test Total Devices Sampled Resulting Classication

ESD-HBM All Devices Passed 1000V 2 (>2000V)

ESD-MM All Devices Passed 400V C (>400V)

ESD-CDM All Devices Passed 1000V IV (>1000V)

7 CMF10120D Rev. A

EA = 1/2L x I

2

D

Fig 25. Unclamped Inductive Switching waveform

for Avalanche Energy

Package Dimensions

Package TO-247-3

CC

POS

A .605 .635 15.367 16.130

B .800 .831 20.320 21.10

X

Z

W

Y

BB

AA

(2)

(1)

(3)

C .780 .800 19.810 20.320

D .095 .133 2.413 3.380

E .046 .052 1.168 1.321

F .060 .095 1.524 2.410

G .215 TYP 5.460 TYP

H .175 .205 4.450 5.210

J .075 .085 1.910 2.160

K 6˚ 21˚ 6˚ 21˚

L 4˚ 6˚ 4˚ 6˚

M 2˚ 4˚ 2˚ 4˚

N 2˚ 4˚ 2˚ 4˚

P .090 .100 2.286 2.540

Q .020 .030 .508 .762 R 9˚ 11˚ 9˚ 11˚ S 9˚ 11˚ 9˚ 11˚ T 2˚ 8˚ 2˚ 8˚ U 2˚ 8˚ 2˚ 8˚

V .137 .144 3.487 3.658

W .210 .248 5.334 6.300

X .502 .557 12.751 14.150

Y .637 .695 16.180 17.653

Z .038 .052 0.964 1.321

AA .110 .140 2.794 3.556

BB .030 .046 0.766 1.168

CC .161 .176 4.100 4.472

Inches Millimeters

Min Max Min Max

Recommended Solder Pad Layout

Part Number Package Marking

CMF10120D TO-247-3 CMF10120

TO-247-3

“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006.

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited

to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.

Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.

8

8 CMF10120D Rev. A

USA Tel: +1.919.313.5300

Fax: +1.919.313.5451

www.cree.com/power

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

Datasheet CMF10120D Datasheet (Cree)

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Frequently Asked Questions

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