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MITSUBISHI HVIGBT MODULES
CM800HB-50H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800HB-50H
● IC...................................................................800A
HIGH POWER SWITCHING USE
● V
CES ....................................................... 2500V
● Insulated T ype
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
3 - M4 NUTS
CM
57
C
10.65
48.8
±0.25
114
C
E
18
±0.25
57
C
E
G
10.35
61.5
4 - M8 NUTS
20
±0.25
40
140
124
E
6 - φ7MOUNTING HOLES
5.2
C
G
E
CIRCUIT DIAGRAM
15
40
CC
E
E
38
5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
28
LABEL
29.5
Feb. 2000
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MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings
CES
V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum collector dissipation
(Note 3)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
GE = 0V
V
CE = 0V
V
C = 25°C
T
Pulse (Note 1)
C = 25°C
T
Pulse (Note 1)
C = 25°C, IGBT part
T
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
10400
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
INSULA TED TYPE
2500
±20
800
1600
800
1600
6000
1.5
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol Item Conditions
V
CES
I
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
(Note 2)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
j) should not increase beyond 150°C.
CE = VCES, VGE = 0V
C = 80mA, VCE = 10V
I
V
GE = VGES, VCE = 0V
j = 25°C
T
j = 125°C
T
CE = 10V
V
GE = 0V
V
CC = 1250V, IC = 800A, VGE = 15V
V
CC = 1250V, IC = 800A
V
GE1 = VGE2 = 15V
V
G = 2.5Ω
R
I
C = 800A, VGE = 15V (Note 4)
Resistive load switching operation
E = 800A, VGE = 0V
I
E = 800A,
I
die / dt = –1600A / µs (Note 1)
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
Min Typ Max
Limits
—
—
6.04.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.80
3.15
120
13.2
4.0
5.4
—
—
—
—
2.50
—
230
—
—
0.008
0.012
0.024
10
7.5
0.5
3.64
—
—
—
—
—
1.60
2.00
2.50
1.00
3.25
1.20
—
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
Page 3
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULA TED TYPE
)
A
(
C
1600
1200
OUTPUT CHARACTERISTICS
Tj=25°C
VGE=14V
VGE=15V
(
TYPICAL
VGE=13V
VGE=12V
VGE=11V
)
VGE=10V
VGE=20V
800
VGE=9V
400
COLLECTOR CURRENT I
0
246
VGE=8V
VGE=7V
8
100
COLLECTOR-EMITTER SATURATION VOLTAGE V
COLLECTOR-EMITTER SATURATION
)
V
(
CE(sat)
VOLTAGE CHARACTERISTICS
5
VGE=15V
4
(
TYPICAL
)
3
2
CE(sat)
(V
1600
)
A
(
C
1200
800
400
COLLECTOR CURRENT I
0
)
COLLECTOR-EMITTER SATURATION
10
)
V
(
8
CE(sat)
6
4
TRANSFER CHARACTERISTICS
(
TYPICAL
)
VCE=10V
Tj = 25°C
j
= 125°C
T
GATE-EMITTER VOLTAGE VGE (V
VOLTAGE CHARACTERISTICS
(
TYPICAL
)
Tj = 25°C
IC = 1600A
IC = 800A
200481216
)
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
0
400 800 1200 1600
COLLECTOR CURRENT IC (A
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
4
10
Tj=25°C
7
5
)
3
A
(
2
E
3
10
7
5
3
2
2
10
7
5
EMITTER CURRENT I
3
2
1
10
054321
(
TYPICAL
EMITTER-COLLECTOR VOLTAGE VEC (V
Tj = 25°C
T
)
j
= 125°C
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
020161284
)
)
nF
(
res
, C
oes
, C
ies
CAPACITANCE C
)
GATE-EMITTER VOLTAGE VGE (V
CAPACITANCE VS. V
(
10
10
10
10
3
7
5
3
2
2
7
5
3
2
1
7
5
3
2
0
–1
2310
TYPICAL
V
GE
C
ies, Coes
res
C
5710023 5710123 5710
COLLECTOR-EMITTER VOLTAGE VCE (V
IC = 320A
CE
)
= 0V, Tj = 25°C
: f = 100kHz
: f = 1MHz
)
C
ies
C
oes
C
res
2
)
Feb. 2000
Page 4
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULA TED TYPE
SWITCHING CHARACTERISTICS
(
TYPICAL
5
3
HALF-BRIDGE
)
2
µs
(
0
10
7
5
3
2
SWITCHING TIMES
–1
10
7
5
710
5
VCC = 1250V, VGE = ±15V
R
G
Inductive load
2
23 5710
COLLECTOR CURRENT IC (A
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
Single Pulse
7
5
C
= 25°C
T
3
th(j – c)
R
th(j – c)
2
0
10
7
5
3
2
–1
10
7
5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Z
2
–2
10
–3
23 57 23 57 23 57
10
(
IGBT part
= 0.012°C/W
–2
10
TIME (s
)
t
d(off)
t
d(on)
t
r
t
f
= 2.5Ω, Tj = 125°C
3
23 5
)
–1
10
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
5
)
µs
(
rr
VCC = 1250V, Tj = 125°C
3
Inductive load
GE
= ±15V, RG = 2.5Ω
V
2
1
10
TYPICAL
7
5
3
2
0
10
7
REVERSE RECOVERY TIME t
5
2
710
5
)
23 5710
EMITTER CURRENT IE (A
)
3
I
rr
t
rr
23 5
)
)
5
A
(
rr
3
2
3
10
7
5
3
2
2
10
7
REVERSE RECOVERY CURRENT I
5
TRANSIENT THERMAL
10
IMPEDANCE CHARACTERISTICS
1
10
Single Pulse
7
5
C
= 25°C
T
3
th(j – c)
R
th(j – c)
2
0
10
7
5
3
2
–1
10
7
5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Z
2
–2
0
10
–3
23 57 23 57 23 57
10
(
FWDi part
= 0.024°C/W
–2
10
TIME (s
)
10
–1
10
0
)
GE
– GATE CHARGE
V
(
20
)
V
(
GE
VCC = 1250V
I
16
C
= 800A
TYPICAL
12
8
4
GATE-EMITTER VOLTAGE V
0
GATE CHARGE QG (nC
)
8000 1000060000 2000 4000
)
Feb. 2000
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