Datasheet CM75DU-24F Datasheet (POWEREX)

CM75DU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

P - NUTS (3 PLACES)

TC MEASURING

N

CM

C2E1 E2 C1

B

M

C

C2E1

POINT

A
D

K K

RTC

E2

J

E2G2G1E1

RTC

Q (2 PLACES)

E

F

G

H

F

R

L

G2
E2

C1

E1
G1

Trench Gate Design
Dual IGBTMOD™

75 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□Low Drive Power
□Low V
□Discrete Super-Fast Recovery

□Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.0230.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5

Dimensions Inches Millimeters

J 0.53 13.5
K 0.91 23.0
L 1.13 28.7

M 0.67 17.0
N 0.28 7.0

P M5 M5

Q 0.26 Dia. 6.5 Dia.
R 0.16 4.0

Applications:

□AC Motor Control
□UPS
□Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM75DU-24F is a
1200V (V

), 75 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 75 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DU-24F
Trench Gate Design Dual IGBTMOD™

75 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75DU-24F Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts

75 Amperes

150* Amperes

75 Amperes

150* Amperes

450 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V ––1mA

CES

, VCE = 0V ––20 µA

GES

IC = 7.5mA, VCE = 10V 5 6 7 Volts

IC = 75A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts

IC = 75A, VGE = 15V, Tj = 125°C – 1.9 – Volts

VCC = 600V, IC = 75A, VGE = 15V – 825 – nC

IE = 75A, VGE = 0V ––3.2 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DU-24F
Trench Gate Design Dual IGBTMOD™

75 Amperes/1200 Volts

Dynamic Electrical Characteristics,Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies

oes

res

r

f

rr

VCE = 10V, VGE = 0V ––1.3 nf

VCC = 600V, IC = 75A, ––100 ns

V

= V

GE1

= 15V, ––50 ns

GE2

RG = 4.2⍀, ––400 ns

Inductive Load ––300 ns

Switching Operation ––150 ns

rr

IE = 75A – 3.1 – µC

––29 nf

––0.75 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Q Per IGBT 1/2 Module, Tc Reference – 0.28 °C/W

th(j-c)

Point per Outline Drawing

D Per FWDi 1/2 Module, Tc Reference ––0.47 °C/W

th(j-c)

Point per Outline Drawing

'Q Per IGBT 1/2 Module, – 0.19 °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.035 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DU-24F
Trench Gate Design Dual IGBTMOD™

75 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

150

125

100

, (AMPERES)

C

Tj = 25

o

C

VGE = 20V

11

10

15

9.5

9

75

8.5

50

25

COLLECTOR CURRENT, I

0

012 34

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 1.0 2.0 3.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

2

10

, (ns)

rr

1

10

VCC = 600V
V

= ±15V

GE

R

= 4.2 Ω

G

REVERSE RECOVERY TIME, t

T

= 25°C

j

Inductive Load

0

10

0

10

EMITTER CURRENT, IE, (AMPERES)

8

(TYPICAL)

(TYPICAL)

I

t

1

10

, (VOLTS)

EC

rr

rr

SATURATION VOLTAGE CHARACTERISTICS

3

)

, (VOLTS

2

CE(sat)

1

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

2

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C
T

= 125°C

j

0 30 60 90 120

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

C

C

VGE = 0V

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

C

1

10

GE

IC = 75A

VCC = 400V

VCC = 600V

0 200 400

600 1200

GATE CHARGE, QG, (nC)

800 1000

oes

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

Tj = 25°C

4

, (VOLTS)

CE(sat)

3

IC = 150A

IC = 75A

2

IC = 30A

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

150

ies

res

2

10

068 1210 181614 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

VCC = 600V
V

GE

R

= 4.2 Ω

G

T

= 125°C

j

2

Inductive Load

10

1

10

SWITCHING TIME, (ns)

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

Per Unit Base
R

th(j-c)

R

th(j-c)

0

10

Single Pulse
T

= 25°C

C

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

= ±15V

2

10

TRANSIENT THERMAL

(IGBT & FWDi)

-2

-1

10

= 0.28°C/W (IGBT)
= 0.47°C/W (FWDi)

-5

10

TIME, (s)

0

10

-4

10

t

d(off)

t

d(on)

t

f

t

r

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4

4