Datasheet CM150TJ-12F Datasheet (POWEREX)

CM150TJ-12F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
D

F

19

20

Tc

J

B

21

L

C

21

1

2

3

4

20

19

S

2

1

P

E

G

NOT

CONNECTED

17

T

4

3

5

6

7

Q

Y
X

5
6

7

8

17 15

CONNECTED

1618

8

10

11

12

NOT

9

9

H

15

14

M

N

13

10

12

11

R

13

14

U

K

Tc

L

W

V

Trench Gate Design
Six IGBTMOD™

150 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.78 121.5
B 2.42 61.5
C 0.67 17.0
D 4.33±0.01 110.0±0.25
E 3.00 76.2
F 0.75 19.05
G 0.60 15.24
H 0.15 3.81

J 2.26 57.5
K 1.97±0.01 50.0±0.25
L 1.07 27.0

Dimensions Inches Millimeters

M 0.15 3.81
N 0.75 19.05
P 0.15 3.81
Q 3.00 76.2
R 0.60 15.24
S 0.45 1.15

T 0.04 1.0
U 0.22 Dia. 5.5 Dia.
V 0.12 3.0
W 0.81 20.5
X 3.72 94.5
Y 4.62 118.11

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM150TJ-12F is a
600V (V

), 150 Ampere Six-

CES

IGBT IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 150 12

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150TJ-12F
Trench Gate Design Six IGBTMOD™

150 Amperes/600 Volts

Absolute Maximum Ratings, T

= 25 °C unless otherwise specified

j

Ratings Symbol CM150TJ-12F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current (Tc = 25°C)** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts
150 Amperes

300* Amperes

150 Amperes

300* Amperes

403 Watts

Mounting Torque, M5 Mounting – 31 in-lb
Weight – 300 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

Static Electrical Characteristics, T

= 25 °C unless otherwise specified

j

iso

2500 Volts

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 20 µA

GES

IC = 15mA, VCE = 10V 5 6 7 Volts

IC = 150A, VGE = 15V, Tj = 25°C– 1.6 2.2 Volts

IC = 150A, VGE = 15V, Tj = 125°C– 1.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G

EC

VCC = 300V, IC = 150A, VGE = 15V – 930 – nC

IE = 150A, VGE = 0V – – 2.6 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150TJ-12F
Trench Gate Design Six IGBTMOD™

150 Amperes/600 Volts

Dynamic Electrical Characteristics, T

= 25 °C unless otherwise specified

j

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies
oes
res

d(on)

r

d(off)

f

rr

rr

Thermal and Mechanical Characteristics, T

VCE = 10V, VGE = 0V, f = 1MHz – – 2.7 nf

VCC = 300V, – – 120 ns

IC = 150A, – – 100 ns

V

= V

GE1

= 15V, – – 350 ns

GE2

RG = 4.2⍀,––250 ns

Inductive Load – – 150 ns

Switching Operation – 2.8 – µC

= 25 °C unless otherwise specified

j

––41nf

––1.5 nf

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

QPer IGBT 1/6 Module, Tc Reference – – 0.31 °C/W

th(j-c)

Point per Outline Drawing

Thermal Resistance, Junction to Case R

DPer FWDi 1/6 Module, Tc Reference – – 0.47 °C/W

th(j-c)

Point per Outline drawing

Thermal Resistance, Junction to Case R

'Q Per IGBT 1/6 Module, – 0.19 – °C/W

th(j-c)

Tc Reference Point Under Chip

Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/6 Module, Tc Reference – 0.25 – °C/W

Tc Reference Point Under Chip

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

th(c-f)

Per Module, Thermal Grease Applied – 0.13 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150TJ-12F
Trench Gate Design Six IGBTMOD™

150 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

300

250

200

, (AMPERES)

C

Tj = 25

o

C

VGE = 20V

9.5

15

11

10

9

150

7.5

(TYPICAL)

(TYPICAL)

2

10

8.5

8

EC

VCC = 300V
V

= ±15V

GE

R

= 4.2 Ω

G

T

= 25°C

j

Inductive Load

, (VOLTS)

100

50

COLLECTOR CURRENT, I

0

01234

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 1.0 2.0 3.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

2

10

I

rr

, (ns)

rr

REVERSE RECOVERY TIME, t

t

rr

1

10

0

10

1

10

EMITTER CURRENT, IE, (AMPERES)

SATURATION VOLTAGE CHARACTERISTICS

3.0

2.5

, (VOLTS)

2.0

CE(sat)

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

0100200

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

VGE = 0V

C

ies

C

oes

C

res

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

1

10

GE

IC = 150A

VCC = 300V

VCC = 200V

400 800 16001200

0

GATE CHARGE, QG, (nC)

300

10

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

0

10

2

0

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

R

th(j-c)

Under Chip = 0.19°C/W
R

th(j-c)

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Per Unit Base

Z

Single Pulse
T

= 25°C

C

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

1

10

TRANSIENT THERMAL

(IGBT & FWDi)

-2

= 0.31°C/W (IGBT)

= 0.47°C/W (FWDi)

TIME, (s)

IC = 150A

IC = 60A

-1

10

-5

10

IC = 300A

VCC = 300V
V

= ±15V

GE

R

= 4.2 Ω

G

T

= 125°C

j

Inductive Load

2

10

0

10

-4

10

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4