Datasheet CM1200HC-50H Datasheet (POWEREX)

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HC-50H

● IC................................................................ 1200A

HIGH POWER SWITCHING USE

● V

CES ....................................................... 2500V

● Insulated Type

● 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3 - M4 NUTS

CM

171

±0.25

±0.25

57

C

79.4

57

C

E

G

E

20.25

41.25

61.5

57

±0.25

CC

EE

61.5

13

6 - M8 NUTS

20

±0.25

40

140

124

8 - φ7MOUNTING HOLES

38

5

28

5.2

C

G
E

C

E

CIRCUIT DIAGRAM

15

40

LABEL

C

E

C

E

29.5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Oct. 2002

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings

CES

V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

GE = 0V

V

CE = 0V

V

C = 25°C

T
Pulse (Note 1)

C = 25°C

T
Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

15600
–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

INSULATED TYPE

2500

±20
1200
2400
1200
2400

6000

2.2

V
V
A
A
A
A

W

°C
°C

V
N·m
N·m
N·m

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol Item Conditions

V

CES

I
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

j) should not increase beyond 150°C.

CE = VCES, VGE = 0V

C = 120mA, VCE = 10V

I
V

GE = VGES, VCE = 0V
j = 25°C

T

j = 125°C

T

CE = 10V

V

GE = 0V

V

CC = 1250V, IC = 1200A, VGE = 15V

V

CC = 1250V, IC = 1200A

V

GE1 = VGE2 = 15V

V

G = 1.6Ω

R

I

C = 1200A, VGE = 15V (Note 4)

Resistive load switching operation

E = 1200A, VGE = 0V

I

E = 1200A,

I
die / dt = –2400A / µs (Note 1)
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied

Min Typ Max

Limits

—

—

6.04.5

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

—

2.80

3.15
180

13.5

6.0

8.1
—
—
—
—

2.50
—
350
—
—

0.008

0.010

0.020

15

7.5

0.5

3.64
—
—
—
—
—

1.60

2.00

2.50

1.00

3.25

1.20
—

—

Unit

mA

V

µA

V

nF
nF
nF

µC

µs
µs
µs
µs

V

µs

µC

K/W
K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Oct 2002

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

)

A

(

2400

2000

1600

OUTPUT CHARACTERISTICS

Tj=25°C
VGE=14V
VGE=15V

VGE=20V

(

TYPICAL

VGE=13V

VGE=12V

VGE=11V

)

VGE=10V

1200

800

400

COLLECTOR CURRENT IC

0

2468

VGE=9V

VGE=8V
VGE=7V

100

COLLECTOR-EMITTER SATURATION VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

5

)

VGE=15V

V

(

4

CE(sat)

(

TYPICAL

)

3

2

CE(sat)

(V)

)
A

(

TRANSFER CHARACTERISTICS

2400

VCE=10V

2000

(

TYPICAL

1600

1200

800

400

COLLECTOR CURRENT IC

0

4812

GATE-EMITTER VOLTAGE VGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

10

)
V

(

CE(sat)

Tj = 25°C

8

(

TYPICAL

6

4

)

Tj = 25°C
T

)

IC = 2400A
IC = 1200A

j = 125°C

16

200

)

COLLECTOR-EMITTER

1

SATURATION VOLTAGE V

0

800400 1200 1600 2000

COLLECTOR CURRENT IC (A

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

7

Tj=25°C

5

)

3

A

(

2

3

10

7
5

3
2

2

10

7
5

EMITTER CURRENT IE

3
2

1

10

054321

(

TYPICAL

EMITTER-COLLECTOR VOLTAGE VEC (V

Tj = 25°C
T

)

j = 125°C

)

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

24000

0

020161284

GATE-EMITTER VOLTAGE VGE (V

CAPACITANCE VS. VCE

(

3

10

)

7
5

nF

(

3
2

2

10

7
5

3
2

1

10

7
5

VGE = 0V, Tj = 25°C

3

ies, Coes : f = 100kHz

C

2

CAPACITANCE Cies, Coes, Cres

)

res

C

0

10

–1

2310

COLLECTOR-EMITTER VOLTAGE VCE (V

TYPICAL

: f = 1MHz

5710023 5710123 5710

IC = 480A

)

)

Cies

Coes

Cres

2

)

Oct. 2002

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HC-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING CHARACTERISTICS

(

TYPICAL

5
3

HALF-BRIDGE

)

2

µs

(

0

10

7
5

3
2

SWITCHING TIMES

–1

10

7
5

710

5

VCC = 1250V, VGE = ±15V

G

R
Inductive load

2

23 5710

COLLECTOR CURRENT IC (A

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

Single Pulse

7
5

T

C

= 25°C

3

th(j – c)

R

th(j – c)

2

0

10

7
5

3
2

–1

10

7
5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

10

–3

23 57 23 57 23 57

10

(

IGBT part

= 0.008K/W

–2

10

)

t

d(off)

t

d(on)

t

r

t

f

= 1.6Ω, Tj = 125°C

3

23 5

)

–1

10

)

TIME (s

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

5

)

VCC = 1250V, Tj = 125°C

µs

(

3

Inductive load

rr

V

GE

= ±15V, RG = 1.6Ω

2

1

10

TYPICAL

7
5

3
2

0

10

7

REVERSE RECOVERY TIME t

5

2

710

5

)

23 5710

EMITTER CURRENT IE (A

)

I

rr

t

rr

3

23 5

)

)

5

A

(

rr

3
2

3

10
7

5
3

2

2

10
7

REVERSE RECOVERY CURRENT I

5

TRANSIENT THERMAL

10

IMPEDANCE CHARACTERISTICS

1

10

Single Pulse

7
5

T

C

= 25°C

3

th(j – c)

R

th(j – c)

2

0

10

7
5

3
2

–1

10

7
5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

0

10

–3

23 57 23 57 23 57

10

(

FWDi part

= 0.016K/W

–2

10

TIME (s

)

10

–1

10

0

)

GE

– GATE CHARGE

V

(

20

)

V

(

GE

VCC = 1250V
I

16

C

= 1200A

TYPICAL

12

8

4

GATE-EMITTER VOLTAGE V

0

GATE CHARGE QG (nC

)

20000150000 5000 10000

)

Oct. 2002