Datasheet CLY15 Datasheet (Siemens)

GaAs FET CLY 15

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D a t a s h e e t

*Power amplifier for mobile phones
*For frequencies from 400 MHz to 2.5 GHz
*Operating voltage range: 2.7 to 6 V

* P

at V

=3V, f=1.8 GHz typ. 31.5 dBm

*Efficiency better 50%

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

S

D

S

G

Type Marking Ordering code

(taped)

Package 1)

CLY 15 CLY 15 Q62702-L99 SOT 223

Maximum ratings Symbol Unit

Drain-source voltage V
Drain-gate voltage V
Gate-source voltage V
Drain current I
Channel temperature T
Storage temperature T
Total power dissipation (Ts < 80°C)

Ts: Temperature at soldering point

P

DS
DG
GS

D
Ch
stg

tot

9V

12 V

-6 V
5A

150 °C

-55...+150 °C

4.7 W

Thermal resistance

R

thChS

< 15 K/W

Channel-soldering point (GND)

1) Dimensions see chapter Package Outlines

Siemens Aktiengesellschaft pg. 1/7 09/96

HL EH PD 21

GaAs FET CLY 15

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Electrical characteristics (TA = 25°C , unless otherwise specified)

Characteristics Symbol min typ max Unit

Drain-source saturation current *)

= 3V

V

DS

= 0V

V

GS

Cut-off current

= 3V

V

DS

V

GS

= -3.8V

Gate cut-off current

= 3V

V

DS

V

GS

= -3.8V

Pinch-off Voltage

VDS=3V ID=400µA

Small Signal Gain *)

= 3V

V

DS

Pin = 5dBm

= 1.4A f = 1.8GHz

I

D

Output Power *)

= 3V

V

DS

Pin = 29dBm

= 1.4A f = 1.8GHz

I

D

Output Power *)

= 5V

V

DS

Pin = 30 dBm

= 1.4A f = 1.8GHz

I

D

I

DSS

I

I

V

GS(p)

G

P

P

D

G

2.4 3.2 4.8 A

- - 400 µA

-2070µA

-3.8 -2.8 -1.8 V

dB

-6-

o

o

32 32.5 - dBm

34.5 35 - dBm

1dB-Compression Point *)

= 3V

V

DS

= 1.4A f = 1.8GHz

I

D

1dB-Compression Point *)

= 5V

V

DS

= 1.4A f = 1.8GHz

I

D

Power Added Efficiency *)

VDS = 3V ID = 1.4A f = 1.8GHz
Pin = 29dBm

*) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions.

Siemens Aktiengesellschaft pg. 2/7 09/96

P

P

1dB

1dB

η

D

- 31.5 - dBm

- 34.5 - dBm

45 50 - %

HL EH PD 21

GaAs FET CLY 15

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Output Charateristics

3

VGS = 0V

2,5

VGS = -0.5V

2

1,5

ID [A]

1

0,5

0

0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

VDS [V]

Power Characteristics

35

30

25

20

15

70

60

50

40

30

@ 3V/1.4A

VGS = -1V

VGS = -1.5V

VGS = -2V

10

5

0

-5 0 5 10 15 20 25 30

Pin [dBm]

Power Characteristics

40
35
30
25
20
15

Pout [dBm]

10

5
0

-5 0 5 10 15 20 25 30 35

Pin [dBm]

20

10

0

80
70
60
50
40
30
20
10
0

Pout
PAE

@ 5V/1.4A

PAE [%]

Pout
PAE

Siemens Aktiengesellschaft pg. 3/7 09/96

HL EH PD 21

GaAs FET CLY 15

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typ. Common Source S-Parameter

VDS = 3V ID=1.4A Zo=50ΩΩ

f S11 S21 S12 S22

GHz MAG ANG MAG ANG MAG ANG MAG ANG

0.200 0.91 -150.9 5.69 99.7 0.01 48.5 0.90 176.0

0.250 0.91 -160.6 4.63 93.5 0.02 45.9 0.87 173.8

0.300 0.90 -167.9 3.89 88.7 0.02 46.8 0.88 171.8

0.350 0.90 -173.7 3.34 84.6 0.02 47.4 0.87 170.8

0.400 0.90 -178.7 2.92 80.9 0.02 47.5 0.87 168.8

0.450 0.90 176.9 2.60 77.5 0.02 47.6 0.87 167.3

0.500 0.90 173.0 2.34 74.6 0.02 48.1 0.87 165.8

0.550 0.90 169.5 2.12 71.4 0.02 47.7 0.87 164.2

0.600 0.90 166.1 1.95 68.7 0.03 47.0 0.87 162.8

0.650 0.90 163.1 1.79 66.1 0.03 47.1 0.87 161.2

0.700 0.90 160.0 1.66 63.5 0.03 46.6 0.87 159.7

0.750 0.90 157.2 1.54 60.9 0.03 45.6 0.87 158.3

0.800 0.90 154.6 1.45 58.6 0.03 45.0 0.87 156.9

0.850 0.90 152.0 1.36 56.1 0.03 43.9 0.87 155.6

0.900 0.90 149.3 1.28 53.8 0.04 43.0 0.87 154.0

0.950 0.90 146.9 1.21 51.5 0.04 41.9 0.87 152.6

1.000 0.90 144.5 1.15 49.0 0.04 41.0 0.87 151.3

1.200 0.91 135.2 0.95 40.3 0.05 36.1 0.87 145.8

1.400 0.91 126.7 0.81 31.8 0.05 31.9 0.88 140.1

1.600 0.92 118.5 0.70 23.8 0.06 26.1 0.88 134.7

1.800 0.92 110.6 0.61 16.3 0.06 20.8 0.88 129.7

2.000 0.93 103.2 0.55 8.7 0.06 15.6 0.89 124.3

2.200 0.93 96.3 0.49 2.1 0.07 10.4 0.88 119.1

2.400 0.93 89.3 0.44 -4.1 0.07 5.2 0.90 114.4

2.600 0.94 82.8 0.40 -10.0 0.07 0.2 0.90 109.3

2.800 0.94 77.0 0.37 -14.9 0.07 -4.2 0.90 104.5

3.000 0.94 71.3 0.34 -19.6 0.08 -9.7 0.91 99.8

3.200 0.93 66.0 0.32 -23.4 0.08 -15.0 0.92 95.1

3.400 0.92 61.6 0.31 -26.8 0.08 -19.4 0.93 90.8

3.600 0.91 57.3 0.30 -29.7 0.07 -23.7 0.92 87.0

3.800 0.90 53.1 0.31 -33.1 0.07 -28.1 0.93 83.1

4.000 0.89 49.2 0.32 -38.1 0.07 -31.9 0.93 79.8

4.200 0.86 46.4 0.34 -44.9 0.07 -35.4 0.92 76.4

4.400 0.83 44.7 0.36 -55.4 0.07 -37.5 0.92 73.4

4.600 0.89 44.2 0.07 -36.2 0.07 -38.1 0.92 71.0

4.800 0.83 43.7 0.34 -80.6 0.07 -39.4 0.92 68.2

5.000 0.85 42.2 0.30 -92.1 0.07 -40.3 0.92 65.2

5.200 0.88 39.4 0.27 -100.8 0.07 -42.5 0.92 62.2

5.400 0.89 36.5 0.24 -107.8 0.07 -45.0 0.92 58.7

5.600 0.90 33.1 0.22 -113.6 0.07 -48.6 0.92 55.7

5.800 0.91 29.6 0.19 -118.9 0.07 -51.4 0.92 52.1

6.000 0.92 26.4 0.18 -124.4 0.07 -54.4 0.92 48.0

Siemens Aktiengesellschaft pg. 4/7 09/96

HL EH PD 21

GaAs FET CLY 15

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typ. Common Source S-Parameter

VDS = 5V ID=1.4A Zo=50ΩΩ

f S11 S21 S12 S22

GHz MAG ANG MAG ANG MAG ANG MAG ANG

0.200 0.90 -151.1 7.61 98.8 0.01 46.5 0.84 176.7

0.250 0.89 -160.6 6.18 92.4 0.02 43.4 0.82 174.7

0.300 0.89 -167.8 5.19 87.5 0.02 46.5 0.82 172.9

0.350 0.89 -173.7 4.45 83.3 0.02 46.0 0.82 171.8

0.400 0.88 -178.7 3.90 79.4 0.02 46.5 0.82 169.7

0.450 0.89 177.0 3.47 75.9 0.02 47.3 0.82 168.3

0.500 0.88 173.2 3.11 72.8 0.02 47.9 0.82 166.7

0.550 0.88 169.6 2.82 69.5 0.02 47.8 0.82 165.5

0.600 0.89 166.4 2.59 66.6 0.03 47.4 0.82 163.9

0.650 0.88 163.1 2.38 63.9 0.03 47.4 0.82 162.6

0.700 0.89 160.3 2.20 61.1 0.03 46.5 0.82 161.0

0.750 0.89 157.5 2.05 58.4 0.03 45.6 0.82 159.6

0.800 0.89 154.9 1.91 55.9 0.03 45.3 0.82 158.0

0.850 0.89 152.1 1.79 53.2 0.03 44.8 0.82 156.8

0.900 0.89 149.7 1.69 50.7 0.03 43.9 0.82 155.4

0.950 0.89 147.1 1.59 48.4 0.04 42.7 0.82 154.1

1.000 0.89 144.7 1.51 45.7 0.04 42.0 0.82 152.8

1.200 0.89 135.5 1.24 36.2 0.04 37.8 0.83 147.3

1.400 0.90 127.1 1.04 27.1 0.05 32.2 0.83 141.9

1.600 0.91 119.1 0.90 18.3 0.05 27.4 0.84 136.8

1.800 0.92 111.1 0.78 10.1 0.06 22.5 0.84 131.6

2.000 0.92 103.7 0.68 2.1 0.06 18.2 0.85 126.3

2.200 0.93 96.6 0.61 -5.1 0.06 12.5 0.86 121.3

2.400 0.93 89.8 0.54 -12.0 0.07 7.3 0.86 116.1

2.600 0.93 83.2 0.48 -18.6 0.07 2.6 0.87 111.4

2.800 0.93 77.3 0.43 -24.0 0.07 -2.6 0.88 106.3

3.000 0.93 71.8 0.39 -29.3 0.07 -7.2 0.89 101.8

3.200 0.92 66.6 0.37 -33.5 0.07 -12.1 0.90 97.2

3.400 0.92 61.8 0.34 -37.2 0.07 -16.8 0.91 92.5

3.600 0.91 57.9 0.32 -40.5 0.07 -21.1 0.91 88.8

3.800 0.90 54.1 0.32 -43.9 0.07 -24.9 0.92 85.1

4.000 0.88 50.5 0.31 -48.3 0.07 -27.6 0.92 81.4

4.200 0.87 47.8 0.32 -53.8 0.07 -31.5 0.92 78.1

4.400 0.86 45.7 0.32 -60.9 0.07 -33.4 0.92 74.9

4.600 0.85 43.4 0.32 -68.9 0.07 -35.4 0.92 72.2

4.800 0.85 42.3 0.31 -77.5 0.07 -37.2 0.92 69.3

5.000 0.86 40.3 0.30 -86.7 0.07 -39.3 0.92 66.2

5.200 0.87 37.7 0.28 -94.5 0.07 -41.6 0.92 63.1

5.400 0.88 35.2 0.26 -101.8 0.07 -44.0 0.92 59.6

5.600 0.89 32.1 0.24 -108.4 0.08 -48.5 0.92 56.6

5.800 0.90 29.0 0.22 -114.5 0.08 -50.3 0.92 53.0

6.000 0.90 26.0 0.21 -121.1 0.08 -54.0 0.93 49.0

Siemens Aktiengesellschaft pg. 5/7 09/96

HL EH PD 21

GaAs FET CLY 15

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Siemens Aktiengesellschaft pg. 6/7 09/96

HL EH PD 21

GaAs FET CLY 15

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Siemens Aktiengesellschaft pg. 7/7 09/96

HL EH PD 21