Datasheet CLP30-200B1 Datasheet (SGS Thomson Microelectronics)

®

CLP30-200B1

Application Specific Discretes

A.S.D™

OVERVOLTAGE & OVERCURRENT

PROTECTION FOR TELECOM LINE

MAIN APPLICATIONS

Any telecom equipment submitted to transient
overvoltages and lightning strikes such as :

Analog and ISDN line cards

■

PABX

■

DESCRIPTION

The CLP30-200B1 is designed to protect
telecommunication equipment. It provides both a
transient overvoltage protection and an
overcurrent protection.

The externalcomponents(balanced resistors, ring
relays contact, ...) needed by the CLP30-200B1
protection concept require very low power rating.
This results in a very cost effective protection
solution.

FEATURES

■

Dual bidirectional protection device.

■ High peak pulse current :

= 40A (5/310 µs SURGE)

I

PP

= 30A (10/1000 µs SURGE)

I

PP

■

Max. voltage at switching-on : 290V

■

Min. current at switching-off : 150mA

SO8

SCHEMATIC DIAGRAM (Top view)

TIPL

GND

1

TIPS

GND

BENEFITS

■

Voltage and current controlled suppression.

■

Surface Mounting with SO8 package.

■

Very low power rating of external components
on line card : balanced resistors, ring relay, low
voltage SLIC protection.

July 1999 - Ed: 4

GND

RINGL

GND

RINGS

1/11

CLP30-200B1

Standard

Bellcore TR-NWT-1089
First level

Bellcore TR-NWT-1089
Second level

ITU-T-K20 / K21

ITU-T-K20
(IEC61000-4-2)

VDE0433

VDE0878

IEC61000-4-5

FCC Part 68, lightning
surge type A

Peak surge

voltage

(V)

2500
1000

Voltage

waveform

2/10µs

10/100µs

Required peak

current (A)

500
100

Current

waveform

2/10 µs

10/1000 µs

serial resistor to

5000 2/10 µs 500 2/10 µs 40

4000
1000

6000
8000

4000
2000

4000
2000

4000
2000
4000

1500

800

10/700 µs 100

5/310 µs 50

25

1/60 ns ESD contact discharge

ESD air discharge

10/700 µs 100

5/310 µs 50

50

1.2/50 µs 100

1/20 µs 22

50

10/700 µs

1.2/50 µs

1.2/50 µs

10/160 µs
10/560 µs

100

50

100
200

100

5/310 µs

8/20 µs
8/20 µs

10/160 µs
10/560 µs

Minimum

meet

standard (

20
25

0
0

0

5

0

50

0

22

17.5
12

)

FCC Part 68, lightning
surge type B

BLOCK DIAGRAM

1000 9/720 µs 25 5/320 µs 0

TIPL TIPS

Overcurrent

detector

OR

SW1

SW2

OR

Overcurrent

detector

RINGL RINGS

Overvoltage

detector

Overvoltage

detector

Overvoltage

reference
(> 200 V)

Overvoltage

reference
(> 200 V)

GND

2/11

Pin Symbol Description

1 TIPL TIP (Line side)

2/3/6/7 GND Ground

4 RINGL RING(Line side)
5 RINGS RING(SLIC side)
8 TIPS TIP (SLIC side)

APPLICATION NOTE

CLP30-200B1

1.INTRODUCTION

The aim of this section is to show the behavior of
our new telecom line protection device.

Fig.1 : Suscriber line protection topology

telecommunication

"PRIMARY PROTECTION"

line

MDF LINE CARD

"SECONDARYPROTECTION"

CLP30­200B1

EXCHANGE

VOLTAGE

REFERENCE

SLIC

Figure 1 is a simplified block diagram of a

subscriber line protection that is mainly used so
far.

This shows two different things :

■

A “primary protection” located on the Main Dis­tribution Frame (MDF) eliminates coarsely the
high energy environmental disturbances (light­ning transients and AC power mains distur­bances) for which theITU-T-K20 requires a 4kV
10/700 µs test. This can be assumed either by
gas-tubes or silicon protection such as the
TLPxxM.

■

A “secondary protection” located on the line
card eliminates finely the remaining transients
that have not been totally suppressed by the
first stage. The ITU-T-K20 requires a 1 kV
10/700 µs test. At this stage, the protection is
managed by the CLP30-200B1.

2.STMicroelectronics CLP30-200B1CONCEPT

2.1 Evolution of the SLIC protection

Over the years, the performances of the SLICs
considerably increased and therefore the need of
the protection has also evolved.

The CLP30-200B1 is especially designed for the
protection of this new generation of SLIC. For this,
it is based on both overvoltage and overcurrent
protection modes.

Fig.2 : Line card protection

I

Programmable thanksto
an external resistor

+I

Programmable thanksto
any external voltage reference

-V

SWON

SWON

+V

-I

SWON

V

SWON

Line Card operating conditions

The figure 2 summarises the performance of the
CLP30-200B1 which basically holds the SLIC
inside its correct voltage and current values.

3/11

CLP30-200B1

APPLICATION CIRCUIT : CLP30-200B1 in line card

Fig.3 : CLP30-200B1 in line card

PTC

TIP

R

GND

PTC

RING

R

R sense

R sense

TIPL TIPS

Overcurrent

detector

Overvoltage

detector

Overvoltage

detector

SW1

SW2

RINGL

OR

OR

Overcurrent

R sense

detector

RINGS

Overvoltage

reference
(> 200 V)

Overvoltage

reference
(> 200 V)

Figure above shows the topology of a protected
analog subscriber line at the line card side.

■ A first stage based on CLP30-200B1 manages

the high power issued from the external surges.
When used in ringing mode, the CLP30-200B1
operates in voltage mode and provides a
symmetrical and bidirectional overvoltage
protection above 200 V on both TIP and RING
lines. When used in speech mode, the
CLP30-200B1 operates in current mode and
the activation current of the CLP30-200B1 is
adjusted by R

■

A second stage which is the external voltage

SENSE

.

reference device defines the firing threshold
voltage during the speech mode and also
assumes a residual power overvoltage
suppression. This stage can be either a fixed or
programmable device such as LCP1511D.

I

External

voltage

reference

-Vbat

TIP

-Vbat

SLIC

RING

1

2

1

2

Ring

Generator

Rp

Rp

4/11

2.3 Ringing mode

Fig.4 : Switching by voltage during ringing mode.

LG

I

TIP

GND

R sense

TIPL TIPS

Overcurrent

detector

Overvoltage

OR

SW1

detector

1/2 CLP200M

Overvoltage

reference

(>200V)

LG

V

CLP30-200B1

ILG

1

2

2

-200

1

3

A1

1

V

+200

LG

In ringing mode (Ring relay in position 2), the only
protection device involved is the CLP30-200B1.

In normal conditions, the CLP30-200B1 operates
in region 1 of A1 curve, and is idle.

If an overvoltage occurring between TIP (or RING)
and GND reaches the internal overvoltage
reference (+/- 200V), the CLP30-200B1 acts and
the line is short-circuited to GND. At this time the
operating point moves to region 2 for positive
surges (region 3 for negative surges). Once the
surge current disappears, the device returns to its
initial state (region 1).

Fig.5 : Methode to adjust the reference voltage.

TIP

R sense

TIPL TIPS

Overcurrent

detector

OR

SW1

SW2

OR

Overvoltage

detector

Overvoltage

detector

For surges occurring between TIP and RING, the
CLP30-200B1 acts in the same way. This means
that the CLP30-200B1 ensures a tripolar
protection.

When used alone, the CLP30-200B1 acts at the
internal overvoltage reference level (+/- 200 V).
Furthermore, it is possible to adjust this threshold
level to a lower voltage by using up to 4 fixed
external voltage reference (V

VZ1

Overvoltage

reference

(>200V)

Overvoltage

reference

(>200V)

GND

VZ2

VZ3

to VZ4) (see fig.5).

Z1

1

2

RING

RINGL

Overcurrent

detector

R sense

RINGS

VZ4

1

2

5/11

CLP30-200B1

2.4 Speech mode

Fig.6 : Switching by current during speech mode.

I

LG

TIP

GND

R sense

TIPL TIPS

Overcurrent

detector

Overvoltage

OR

SW1

detector

Overvoltage

reference

(>200V)

1

2

V

LG

ILG

Rp

External

voltage

reference

-Vbat

-VBAT

6

4

5

V

LG

In speech mode (Ring relay in position 1), the
protection is provided by the combination of both
CLP30-200B1 and the external voltage reference
device (for example LCP1511D).

In normal conditions, the working point of this
circuit is located in region 4 of A2 curve :
the CLP30-200B1 is idle.

When a surge occurs on the line, the external
voltage reference device clamps at GND or -V

bat

respectively for positive and negative surges. This
generates a current which is detected by R

SENSE

and causes the protection to act : the line is
short-circuited to GND. The operating point moves
to region 6 for positive surges or region 5 for
negative surges.

Once the surge current falls below the
switching-off current I

, the CLP30-200B1

SWOFF

returns to its initial state (region 4).

Furthermore, the CLP30-200B1 switches when an
overvoltage, either positive or negative, occurs
either :

■ simultaneously on both TIP and RING lines

versus GND.

■

between TIP and RING.

■

on TIP (or RING) versus GND.

6/11

CLP30-200B1

The choice of the switching-on current is function of the R

Fig . 7a and 7b : Switching-on current versus R

Iswon negative surge ( mA )

1000

100

1.6 3 6

Iswon - @ 0°C Iswon - @ +25°C Iswon - @ +70°C

Rsense ( Ohms )

SENSE

1000

resistors.

SENSE

Iswon @ 25°C ( mA )

Iswon + min Iswon + max Iswon - min Iswon - max

100

1.6 3 6

Rsense ( Ohms )

This current (typically above 150 mA) should not activate the protection device CLP30-200B1.
Thereforethe levelof activationis tobe chosenjust belowthis limit(typically 200mA).This levelis adjusted

through R
Figures 7a and 7b enable the designers to choose the right R

Example: The choice of R

SENSE

.

value.

SENSE

=3Ωensures a negative triggering of -280 mA min and -380mA max.

SENSE

In this case, the positive triggering will be 220mA min and 320mA max.

Thanks to the CLP30-200B1 topology, the surge current in the line is reduced after it.
Because the remaining surge energy is low, the power ratings of RP, the relay contacts and the external

voltagereference devicemay be keptlow. Thisresultsin asignificant cost reductionfor thewhole system.

7/11

CLP30-200B1

ABSOLUTE MAXIMUM RATINGS (R

SENSE

=3Ω,T

amb

= 25°C)

Symbol Parameter Value Unit

I

PP

I

TSM

T

stg

T

j

T

L

ELECTRICAL CHARACTERISTICS (R

Line to GND peak pulse current

10/1000 µs (open circuit voltage wave shape 10/1000 µs)
5/310 µs (open circuit voltage wave shape 10/700 µs)

Non repetitive surge peak on-state current
F=50Hz

t

Storage temperature range
Maximum junction temperature

Lead temperature for soldering during 10 s.

SENSE

= 3 Ω, and T

amb

= 25 °C)

=10ms

t

p

= 200 ms

p

=1s

t

p

30
45

8.5

4.5

3.5

-40 to +150
150

260 °C

Symbol Parameter Test condtions Min Max Unit

I

LGL

Line to GND leakage current VLG= 200 V

10 µA
Measured between TIP (or
RING) and GND

V

V

SWON

LG

Line to GND operating voltage
Line to GND voltage at SW1 or

SW2 switching-on

Measured at 50 Hz between TIPL
(or RINGL) and GND,one cycle

200 V

290 V

A

A

°C

I

SWOFF

Line to GND negative current

Refer to test circuit fig 9

150 mA

at SW1 or SW2 switching-off

I

SWON

C

Line current at SW1 or SW2

switching-on
Line to GND capacitance V

Positive surge

Negative surge

=0V V

LG

OSC

= 200mV

RMS

220
370

320
470

100 pF

F = 1MHz

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th(j-a)

Junction to ambient

170 °C/W

mA

8/11

CLP30-200B1

Fig.8 : TEST CIRCUIT FOR I

PARAMETER : GO - NO GO TEST

SWOFF

TIPL or RINGL

R

-V

D.U.T.

- 48 V

BAT

=

GND

Surge
generator

This is a GO-NO GO test which allows to confirm the switch-off current (IH) level in functional test
circuit.

TEST PROCEDURE

- Adjust the current level at the I

- Fire the D.U.T with a surge current : I

value by short circuiting the D.U.T

SWOFF

= 10 A, 10/1000 µs

PP

- The D.U.T will come back to the off-state within a duration of 50 ms max.

Fig. 9 : Typical variation of switching-on current
(positive or negative) versus R

SENSE

resistor and

Fig. 10 : Variation of switching-on current versus

SENSE

at 25 °C.

R

junction temperature (see test condition Fig. 11).

Iswon negative surge ( mA )

1000

Iswon - @ 0°C Iswon - @ +25°C Iswon - @ +70°C

Iswon @ 25°C ( mA )

1000

Iswon + min Iswon + max Iswon - min Iswon - max

100

1.6 3 6

Fig. 11 : I

SWON

Rsense ( Ohms )

MEASUREMENT

- ISWON = l1 when the CLP30-200B1 switches on (l1 is

progressively increased using R)

- Both TIP and RING sides of the CLP30-200B1 are
checked

48 V

.

R

L

Rsense

TIPL TIPS

DUT

L RINGS

RING

I1

GND

-RL=10Ω

±

100

1.6 3 6

Rsense ( Ohms )

fig. 12 : Relative variation of switching-off current

versus junction temperature (for R

SENSE

3 and 10 Ω).

I [Tj°C] / I [25°C]SWOFF SWOFF

1.4

1.2
1

0.8

R

0.6

0.4

020406080

Temperature (°C)

between

9/11

CLP30-200B1

Fig. 13 : Relative variation of switching-off current

versus R

I [Rsense] / I [4 ]SWOFF SWOFF Ω

(between 3 and 10 Ω).

SENSE

1.6

1.4

1.2

1.0

0.8

0.6

0.4
46810

Rsense ( )Ω

Fig. 15 : Relative variation of internal reference
voltage versus junction temperature (I

V

REF [Tj°C] / V [25°C]REF

1.10

1.05

=1mA).

LG

Fig. 14 : Relative variation of switching-on voltage
versus dV/dt with an external resistor of 3 Ω.

V

SWON / REFV

1.12

1.10

1.08

1.06

1.04

1.02

1.00

0.98

0.1 0.3 1 3 10 30 100 300 1000

dV/dt (V/µs)

Fig. 16 : Capacitance (TIP/GND) versus applied

voltage (typical values).

C (pF)

70

50

1.00

0.95

0.90

0.85

-40 -20 0 20 40 60

Tj (°C)

Fig. 17 : Surge peak current versus overload
duration (maximum values).

TSM

I (A)

10

8

6

4

2

0

0.01 0.1 1 10 100 1000

t(s)

30

20

10

1 2 3 5 10 20 30 50 100

V (V)R

10/11

PACKAGE MECANICAL DATA
SO8 plastic

CLP30-200B1

DIMENSIONS

REF.

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

L

A

a2

b

8

e

e3

D

M

5

S

F

c1

C

a3

a

1

E

b

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.025 0.033

1

b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010

C 0.25 0.50 0.50 0.010 0.020

c1 45° (typ)

D 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

1

4

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.15 0.157

L 0.4 1.27 0.016 0.050

M 0.6 0.024

S 8° (max)

MARKING

Ordering code Marking Package Weight Base qty Delivery mode

CLP30-200B1 CLP30 SO-8 0.08g 100 Tube

CLP30-200B1RL CLP30 SO-8 0.08g 2500 Tape & Reel

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change without notice. This publication supersedes and replaces all information previously supplied.
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11/11