Datasheet CLP200M Datasheet (SGS Thomson Microelectronics)



CLP200M

ApplicationSpecific Discretes

A.S.D.



OVERVOLTAGE AND OVERCURRENT

PROTECTION FOR TELECOM LINE

MAINAPPLICATIONS

Any telecom equipment submitted to transient
overvoltagesandlightningstrikes suchas:

Analogand ISDNline cards
PABX
MainDistribution Frames
Primaryprotection modules

DESCRIPTION

TheCLP200Mis designedtoprotecttelecommuni­cationequipment.It providesbothatransientover­voltageprotectionand an overcurrentprotection.
It is housedin a PowerSO-10

TM

package.

FEATURES

DUALBIDIRECTIONALPROTECTIONDEVICE.
HIGHPEAKPULSE CURRENT:

Ipp = 100A(10/1000µs SURGE)
MAX.VOLTAGEAT SWITCHING-ON: 290V
MIN.CURRENT AT SWITCHING-OFF : 150mA
FAILURESTATUSOUTPUTPIN

BENEFITS

Both primary and secondaryprotectionlevelsin
onedevice.

Voltageand current controlledsuppression.
SurfaceMountingwithPowerSO-10

TM

package.

Line card cost reduction thanks to the very low
power rating of external components required :
balanced resistors, ring relay, low voltage SLIC
protection.

PowerSO-10

SCHEMATICDIAGRAM

1

TIP

S

TIP

L

TIP

L

TIP

L

TABis connected to GND

TM

NCFS
RING
RING
RING
RING

S

L

L

L

COMPLIESWITH THEFOLLOWINGSTANDARDS :

CCITTK20: 10/ 700µs 4kV

5 / 310µs 100A

BELLCORETR-NWT-000974

10/ 1000µs 1kV
10/ 1000µs 100A

February 1998 Ed : 3

1/21

CLP200M

BLOCKDIAGRAM

TIPL TIPS

Overcurrent

detector

OR

SW3 SW1

FS GND

SW4 SW2

OR

Overcurrent

detector

RINGL RINGS

Overvoltage

detector

Overvoltage

detector

Overvoltage

reference

(+/- 215 V)

Overvoltage

reference

(+/- 215 V)

Pin Symbol Description

1 FS FailureStatus
2 TIPS TIP(SLICside)

3 / 4 / 5 TIPL

TIP(Lineside)

6 / 7 / 8 RINGL RING(Lineside)

2/21

9 RINGS RING(SLICside)

10 NC Not connected

TAB GND Ground



APPLICATION NOTE

1. INTRODUCTION

The aim of this section is to show the behaviorof
ournewtelecomlineprotectiondevice.Thisdevice
includes a primary protection level and is suitable
for main distribution frames and line cards. This
protection concept is explained and, in addition,
the CLP200M performances are analysed when
facing different surgesas described in the CCITT
recommendations.

Fig.1 :

Subscriberline protectiontopology

telecommunication

line

”PRIMARYPROTECTION” ”SECONDARYPROTECTION”

MDF LINECARD

EXCHANGE

SLICCLP200M

CLP200M

2. SGS-THOMSONCLP200M CONCEPT

2.1Evolution of the SLIC protection

Over the years, the silicon protection per­formances have considerably changed .

The first generation of products like SMTHBTxx
and SMTHDTxx offered fixed overvoltage protec­tion against surges on either TIP or RING line in
fourpackages.

The following generation like THBTxx and
THDTxx still offered fixed overvoltageprotection
againstsurgeson both TIP andRINGlines in two
packages.

The next step was the introduction of the
LCP1511D which brought the advantage of full
programmablevoltage.

Today, the CLP200M combines the features of all
the previous generations.In addition to that, it of­fers an overcurrent detection when operating in
speechmode and also a FailureStatusoutputsig­nal.

telecommunication

line

MDF LINECARD

”SECONDARYPROTECTION”

THDTxx or

EXCHANGE

LPC1511D
or LB200B

CLP200M SLIC

Figure 1 is a simplified block diagram of a sub­scriberline protectionthat ismainlyused sofar.

Thisshows two differentthings:

A ”primaryprotection”locatedon theMain Distri­butionFrame(MDF)eliminatescoarselythehigh
energy environmental disturbances (lightning
transientsand AC powermainsdisturbances)

A ”secondaryprotection”locatedon the line card
includesa primaryprotectionlevel(firststage)and
a residualprotection(secondstage)which elimi­natesfinelytheremainingtransientsthathavenot
beentotallysuppressedby thefirststage.

The CLP200M can be used both in MDFs and in
line cards. In that case, any line card may be
swappedfrom one MDFtoanotherone withoutre­ducing the efficiency of the whole system protec­tion.

The CCITT requirements are different for these
two protection locations (MDFs and line cards).
Concerningthe”primaryprotection”,theCCITTre­quires a 4kV, 10/700µs surge test whereas the
”secondary protection” has to withstand a 1kV,
10/700µs surge test.

The explanations which follow are basically
coveringthelinecardapplication.

Fig. 2 :

Programmablethanks to
any external voltagereference

Linecard protection

I

+I

SWON

-I

Programmablethanks to
an external resistor

SWON

V

Line card operating conditions

The figure 2 summarizes the performance of the
CLP200MwhichbasicallyholdstheSLICinside its
correctvoltageandcurrentvalues.



3/21

CLP200M

APPLICATION CIRCUIT : CLP200Min linecard
Fig.3 : CLP200Min line card

Fuse

TIP

RING

SW3 SW1

FS GND

SW4 SW2

Fuse

R sense

TIPL TIPS

Overcurrent

detector

Overvoltage

detector

Overvoltage

detector

RINGS

RINGL

OR

OR

Overcurrent

R sense

detector

Overvoltage

reference

(+/- 215 V)

Overvoltage

reference

(+/- 215 V)

I

1

Rp

2

1

Rp

2

Ring

Generator

External

voltage

reference

-Vbat

TIP

-Vbat

(*)

SLIC

RING

(*) LCP1511D orTHDT series

Figure 3 above showsthe topology of a protected
analog subscriber line at the exchange side. The
CLP200M is connected to the ring relay via two
balancedRp resistors, and to the SubscriberLine
Interface Circuit. A second device is located near
theSLIC : it canbe either a LCP1511Dor a THDT
series.

These two devices are complementary and their
functionsare explainedbelow:

The first stage based on CLP200M manages
the high power issued from the external
surges. When used in ringing mode, the
CLP200M operates in voltage mode and pro­vides a symmetrical and bidirectional
overvoltage protection at +/-215 V on both TIP
and RING lines. When used in speech mode,
the CLP200M operates in current mode and
the activation current of the CLP200M is ad­justed by R

SENSE

.

The second stage is the external voltage refer­ence device which defines the firing threshold
voltage during the speech mode and also as­sumes a residual power overvoltage
suppression.This protectionstagecan be either
a fixed or programmable breakover device. The
THDTxxfamilyacts as a fixed breakover device
whilethe LCP1511Doperatesas a programma­bleprotection.

Thanks to this topology, thesurge current in the
line is reduced after the CLP200M. Because the
remainingsurgeenergyis low,thepowerratingsof
Rp,the ringrelaycontactsand theexternalvoltage
referencecircuit maybe downsized.This resultsin
a significantcostreduction.

4/21



2.3 Ringingmode
Fig.4 : Switchingbyvoltage duringringingmode.

ILG

Fuse

TIP

FS

Rsense

TIPL TIPS

Overcurrent

detector

OR

SW3 SW1

Overvoltage

detector

1/2 CLP200M

Overvoltage

reference

(+/- 215 V)

VLG

GND

CLP200M

ILG

1

Rp

2

-215

3

A1

2

1

VLG

+215

In ringing mode (Ring relay in position 2), the only
protectiondeviceinvolvedis theCLP200M.

Innormalconditions,theCLP200Moperatesin re­gion1 of A1 curve,andisidle.

If an overvoltageoccuringbetween TIP(or RING)
and GND reaches the internal overvoltage refe­rence(+/- 215V),theCLP200Mactsand thelineis
short-circuited to GND. At this time the operating
pointmovestoregion2 for positive surges(region
3 for negativesurges).Oncethe surgecurrentdis­appears, the device returns to its initial state (re­gion1).

Fig.5a : Methodto adjustthereferencevoltage.

Fuse

TIP

SW3 SW1

R sense

TIPL TIPS

Overcurrent

detector

Overvoltage

OR

detector

For surges occuring between TIP and RING, the
CLP200M acts in the same way. This means that
theCLP200M ensuresa tripolarprotection.

Whenused alone, theCLP200M acts at the inter­nalovervoltagereferencelevel(+/-215V).Further­more,it is possible to adjust this thresholdlevel to
a lowervoltageby using :

.up to 4 fixed external voltage reference (V

V

) (seefig.5a).

Z4

1

Rp

2

VZ1

Overvoltage

reference

(+/- 215 V)

VZ2

Z1

to

RING

FS GND

Fuse

SW4 SW2

RINGL

OR

Overcurrent

detector

R sense

Overvoltage

detector

RINGS



Overvoltage

reference

(+/- 215 V)

VZ3

VZ4

1

Rp

2

5/21

CLP200M

externalreferencesupplies,Vb1andVb2(seefig.5b)..

Fig. 5b: Methodto adjustthe referencevoltage.

TIP

RING

Fuse

R sense

TIPL TIPS

Overcurrent

detector

Overvoltage

OR

SW3 SW1

FS GND

Fuse

SW4 SW2

RINGL

OR

Overcurrent

R sense

detector

detector

Overvoltage

detector

RINGS

Overvoltage

reference

(+/- 215 V)

Overvoltage

reference

(+/- 215 V)

1

Rp

2

VB1

VB2

1

Rp

2

2.4 Speechmode
Fig.6 : Switchingby currentduring speechmode.

ILG

Fuse

TIP

FS

R sense

TIPL TIPS

Overcurrent

detector

OR

SW3 SW1

Overvoltage

detector

Overvoltage

reference

(+/- 215V)

VLG

GND

In speech mode(Ringrelayin position1),the pro­tection is provided by the combination of both
CLP200M and the external voltage reference de­vice.
In normal conditions, the working point of this cir­cuit is located in region 4 of A2 curve : the
CLP200Mis idle.
Whena surgeoccurs on the line,theexternal volt­age reference device clamps at GND or -V

bat

re­spectivelyforpositiveand negativesurges.
This generates a current which is detected by
R

andcausestheprotectiontoact: theline is

SENSE

short-circuitedto GND.

6/21



ILG

1

External

voltage

reference

-Vbat

-VREF2

5

4

VREF1

6

Rp

2

The operatingpoint moves to region 5 for positive
surgesor region6 fornegative surges.
Once the surge current falls below the switching­off current I

, the CLP200M returns to its in-

SWOFF

itialstate (region 4).
Furthermore, the CLP200M switches when an

overvoltage, either positive or negative, occurs
either:

simultaneouslyon bothTIP and RING lines ver­susGND.

betweenTIP andRING.
onTIP (orRING)versus GND.

A2

V

LG

CLP200M

Fig. 7a and 7b : Switching-on current versus

R

.

SENSE

ISWON (mA)

500

300

200

100

3 5 7 9 11 13

Iswon@ 25°C (mA)

500

300

200

100

357911

-20°C25°C75°C

Rsense ( )Ω

Iswonmin Iswon max Iswonmin Iswonmin
negative negative positive positive

Rsense ( )Ω

The choice of the switching-on current is function
oftheR

SENSE

resistors.

In normal operating condition, only the negative
currentofthesignalisof interest.Thiscurrent(typi­cally below -150 mA) should not activate the pro­tection device CLP200M. Therefore the level of
activationis to be chosenjustabove thislimit (typi­cally -200 mA). This level is adjusted through

SENSE

.

R
Figures7a and 7b enablethe designersto choose

theright R

SENSE

value.

2.5. FailureStatus

The CLP200M has an internal feature that allows
the user to get a Failure Status (FS) indication.
When the CLP200M is short-circuiting the line to
GND,a signalcanbemanagedthrough pin 1.This
signalcan beusedto turna LEDon inordertopro­vide a surge indication. It mayalsobe used with a
logic circuitryto count the number of disturbances
appearingon the lines.

Fig. 8 : FailureStatus circuit anddiagnostic.

Rsense

1

FAILURE

STATUS

1k

+12V

CLP200M

Rsense

If a surge exceeding the maximum ratings of the
CLP200Moccurson the line, the devicewill fail in
a short-circuit state.

Fig.9 :

Operationlimitsanddestructionzoneof the

CLP200M.

Ipp (A)

1000

100

10

0.01 0.1 1 10
t (ms)

EXAMPLE :

The choice of R

=4Ωensures a negative

SENSE

triggeringof -220mAmin and-320mAmax.In this
case,thepositivetriggeringwillbe 180mAminand
280mAmax.



Thefigure 9 showstwo differentcurves:

Theloweroneindicatesthe maximumguaranted
workinglimits of the CLP200M.

Theupper curveshowsthelimit abovewhichthe
CLP200Miscompletelydestructed. Inthiscase,
theFail Diagnosticpin is on.

7/21

CLP200M

3. CLP200MTESTSRESULTSACCORDINGTO
CCITTK20RECOMMENDATIONS

3.1CCITT K20 Recommendations

In respect with the CCITT recommendations, the
CLP200M has to withstand three kinds of distur­bances.

3.1.1. Lightning simulation
(Test2, table2/K20)

Thistest shallbe donein transversaland longitudi­nalmodesas shown in figure10.

Fig.10 : Transversaland longitudinaltest
topologies.

AorB

ITEM

UNDER

BorA

TEST

E

A

25

25

ITEM

UNDER

B

TEST

E

4kv

4kv

15 25

0.2µF5020µF

TRANSVERSAL TEST

15

0.2µF5020µF

Fig. 11 :

Powerinduction testcircuit.

1µF

S2

1µF

100

S1

R1

R2

A

ITEM

UNDER

TEST

B

E

3.1.3.Powercontact(Test 3, table1/K20)

Thistest shall be donewith the testcircuitof figure

12.
Vac(max)= 220V

, with switchS in each posi-

RMS

tionand duration 15 min.

Fig. 12 : Powercontact testcircuit.

<10

600

<10

600

A

UNDER

B

ITEM

TEST

E

LONGITUDINAL TEST

The test generator is the 10/700µs with 4kV of
peakvoltage.

3.1.2. Powerinduction
(Test3a and3b, table2/K20)

Twokinds of testsusing thesame circuittopology

(seefig.11) are definedin the CCITTK20.

Test3a :

Vac(max)= 300V

, R1= R2= 600

RMS

Ω

S2operatingand test duration= 200ms.

Test3b :
Vac(max)= 300V

(*),R1 = R2 = 200Ω

RMS

S2operatingand test durationnot defined.

(*)Recommended value.

8/21



3.1.4.Acceptance criteriaand numberof tests

Forthetestsdescribedin chapter3.1.1.,3.1.2.and

3.1.3.two criteria aredefined:
A:Equipmentshallwithstandthetestwithoutdam-

ageand shalloperateproperly withinthespecified
limits.

B:A fire hazard shouldnot occur in the equipment
asa resultof thetests.

The criteria are affected to the different tests as
mentionedin the table 1.

CLP200M

Table1 : Acceptancecriteriaand numberof tests.

TEST ACCEPTANCE

NUMBERTO TESTS

CRITERIA

2 A 10 forlongitudinalA

10 forlongitudinalB

and 10 fortransversal
3a A 5
3b B 1

3 B 1 foreach positionof s

3.2.Ringingmode

3.2.1. Lightningsimulationtest

Lightningphenomenaare themostcommon surge
causes.The purpose of thistest isto checkthe ro­bustnessof the CLP200M against these lightning
strikes.

Fig.13 : Lightningsimulationtest.

10/700µs

I

GENERATOR

+/- 4kV

Rsense

TIPL

1/2 CLP200M

GND

4Ω

TIPS

Rp

V

Fig.15 :

CLP200Mresponseto a negativesurge.

Figures 14 and 15 show that the remaining over­voltagedoesnot exceed+/- 260V. The CLP200M
switcheson within0.7µsandwithstandsthe 100A
givenby theCCITTK20 generator.

Consequently,the CLP200Mtotally fulfillsthistest.

3.2.2Power induction
(Test3a and 3b table2/K20)

Surgesof longdurationwithmediumvoltagevalue
are mainly produced by the proximity of a sub­scriber line with an AC mains line or equipment.
Thepurpose of this testisto checkthe robustness
ofthe CLP200Magainst these capacitivecoupling
disturbances.

Fig. 16 : Powerinductancetest.

Fig.14 :

CLP200Mresponseto a positivesurge.



TEST V

(RMS)

R(Ω) Duration

3a 300 600 0.2s
3b 300 200 ?

9/21

CLP200M

Fig. 17 : CLP200Mresponseto the induction test

(Test3a).

Fig. 18 : CLP200M reponse to the induction test
(Test3b).

The test 3 of CCITT K20 requiresa serial PTC (or
fuse)which is insertedin the test circuit to limit the
currentrate. ThisPTCactslikean open-circuitin a
non-instantaneous way when a surge occurs on
the line. Meanwhile, the CLP200M has to with­standthe surge.

Fig.19 : Powercontact test.

600 < 10ΩΩ

or

15min

V(RMS)
50Hz

I

PTC

4

Rsense Rp

TIPL TIPS

1/2 CLP200M

GND

V

Fig. 20 : Powercontacttest 3 (With10Ωseries).

Figures17 and18 showthat theremainingvoltage
doesnotexceed 270 V.
Consequently,the CLP200Mtotally fulfillsthistest.

The test duration is not specified in test 3b. If the
duration exceeds 5s we do suggest to follow the
soldering and mounting recommendations given
onpage17ofthis document.

3.2.3Power contact(Test3 table1/K20)

This long duration surge is produced when con­necting a subscriber line to an AC mains line or
equipment.Thepurposeof thistestis tocheckthe
robustnessof the CLP200M against these distur­bances.

10/21



Figure 20 shows that the remaining overvoltage
does not exceed 250 V and shows that the PTC
actslike anopen-circuit after60 ms.
Consequently,the CLP200Mtotally fulfillsthistest.

3.3.Speechmode

3.3.1.Lightningsimulation test
(Test2, table2/K20)

Fig.21: Lightningtest in speechmode.

10/700µs

GENERATOR

+/- 4kV

I

1

4

Rsense

TIPL TIPS

1/2 CLP200M

GND

V1

I2

50

Rp

-48V

LCP1511D

SLIC

V2

CLP200M

Fig.22 : CLP200Mresponseto a positivesurge.

Fig. 23 : CLP200Mresponseto a negativesurge.

3.3.2Power inductiontest
(Test3a and 3b, table 2/K20)

Fig.24 : Powerinductiontest.

I

1

V(RMS)
50 Hz

TEST V

TIPL

1/2 CLP200M

(RMS)

4Ω

Rsense

TIPS

GND

V1

R(Ω) Duration

I2

50
Rp

-48V

LCP1511D

SLIC

V2

3a 300 600 0.2s
3b 300 200 ?

Figures25 and26 showthat themaximumremain­ing voltage does not exceed +2V for positive
surgesand -55V for negativesurges.
Consequently,the CLP200Mtotally fulfillsthistest.

The test duration is not specified in test 3b. If the
duration exceeds 5s we do suggest to follow the
soldering and mounting recommendations given
onpage17of this document.

Figures22 and23 givethe voltageandcurrentbe­haviorduringpositiveandnegative4kV,10/700µs,
surge tests using a LCP1511D as second stage
protection device. The firing threshold values are
now adjusted to GND and to -Vbat (-48V) by the
actionof thesecondstageprotectionwhichactsas
anexternalvoltage reference.

As shown on these figures, the maximumremain­ing voltage does not exceed +2.5V for positive
surgesand -60V for negativesurges.

Consequently,the CLP200Mtotally fulfillsthistest.

Fig.25 :

Inductiontest behavior(Test3a).



11/21

CLP200M

Fig.26 : Inductiontest behavior(Test3b).

3.3.3- Powercontact test (Test3 table1/K20)

The test 3 of CCITT K20 requires a serial PTC (or
fuse)which isinsertedinthe test circuitto limit the
currentrate. This PTC acts like an open-circuitaf­ter 60 mswhen a surge occurs on the line. Mean­while,theCLP200Mhasto withstandthe surge.

The protection device CLP200M totally fulfills this
test.

Fig.28 :Powercontacttest3 (withR≤10Ωseries).

Fig. 27 : Power contacttest.

600 or < 10

12/21

V(RMS)

50Hz

I

PTC

15min

4Ω

Rsense Rp

TIPL TIPS

1/2 CLP200M

GND

I2

SLIC

-48V

V

LCP1511D

V2



CLP200M

ABSOLUTEMAXIMUMRATINGS (R

SENSE

=4Ω, and T

Symbol Parameter Test Conditions Value Unit

I

PP

Line to GNDpeak surge
current

10/1000µs (open circuitvoltage
wave shape10/1000µs)

5/310µs(opencircuit voltage
wave shape10/700µs)

I

TSM

Mainspowerinduction
current

Mainspowercontact current V

V

=300V,R= 600Ω

RMS

t =200ms

=220V,R= 10Ω

RMS

(failurestatus threshold)
t =200 ms

= 220V,R =600

V

RMS

t =15 mn

T

stg

T

j

T

L

Storagetemperature range
Maximumjunctiontemperature

Maximumleadtemperatureforsolderingduring10 s

amb

=25°C)

Ω

100 A

130 A

0.5 A

22 A

0.30 A

- 40 to + 150
150

260 °C

°C

ELECTRICAL CHARACTERISTICS

(R

SENSE

=4Ω, andT

amb

=25°C)

Symbol Parameter Test Conditions

I

LGL

Line to GNDleakage
current

. VLG= 200V
.

MeasuredbetweenTIP

(orRING)and GND

V

ref

Overvoltageinternal
reference

.

=1mA

I

LG

.MeasuredbetweenTIP
(orRING)and GND

V

SWON

I

SWOFF

Line to GNDvoltage at SW1
or SW2switching-on

Line to GNDcurrent at SW1

. Measuredat50 Hzbetween
TIPL(or RINGL)and GND

.

Refertotest circuit page 14 150 mA

or SW2switching-off

I

SWON

Line currentat SW1or SW2
switching-on

C LinetoGNDcapacitance

.

Positivepulse

. Negativepulse
.

=-1V+1V

V

LG

RMS

. F = 1 MHz

Value

Min. Max.

Unit

10

215 V

290 V

180
220

280
320

200 pF

A

µ

mA



13/21

CLP200M

TEST CIRCUITFORI

PARAMETER: GO-NOGO TEST

SWOFF

R

D.U.T.

V

BAT

This is a GO-NOGOtest whichallows to confirmthe switch-off(I
TESTPROCEDURE:

- Adjust the currentlevel at the I

- Firethe D.U.T.witha surgecurrent : I

- The D.U.T.will comebacktotheOFF-statewithin a durationof 50msmax.

Fig. 29 : Typical variation of switching-on current
(positive or negative) versus R
junctiontemperature(seetestconditionFig31).

ISWON (mA)

500

=

-48V

-20°C25°C75°C

SWOFF

SENSE

SWOFF

valueby shortcircuitingthe D.U.T.

=10A, 10/1000µs.

PP

Fig. 30 : Variation of switching-oncurrent versus

resistor and

R

at25°C.

SENSE

Iswon@ 25°C (mA)

500

) levelina functionaltest circuit.

-V

Surge
generator

Iswonmin Iswon max Iswonmin Iswonmin
negative negative positive positive

P

300

200

100

3 5 7 9 11 13

Rsense ( )Ω

Fig. 31 : I

MEASUREMENT

SWON

- Iswon = I1 when the CLP200M switches on (I1 is
progressivelyincreasedusing R)

- Both TIP and RING sides of the CLP200M are
checked

.

=10

-R

Ω

L

RL

±

48 V

R sense

TIPL TIPS

DUT

RINGL RINGS

I1

GND

300

200

100

357911

Rsense ( )Ω

Fig. 32 : Relativevariationof switching-offcurrent

versusjunctiontemperatureforR

SENSE

and 10Ω.

ISWOFF [Tj°C] / ISWOFF [25°C]

2.0

1.8

1.6

1.4

1.2

1.0

R

0.8

0.6

0.4

-40 -20 0 20 40 60 80

Tj (°C)

between3

14/21



CLP200M

Fig. 33 : Relativevariationof switching-offcurrent

versusR

(between3 and10Ω).

SENSE

ISWOFF[Rsense] / ISWOFF[4 Ω]

1.6

1.4

1.2

1.0

0.8

0.6

0.4
46810

Rsense ( )Ω

Fig.34 : Residualcurrent l1 after theCLP200M.

The residualcurrentl1 is defined by its peakvalue
(I

) and its duration(τ)@IP/2 .

P

Currentsurge input

waveform(µs)

I

(A)

PP

5/310

130A

SURGE
GENERATOR

positivesurge

negativesurge

TIPL TIPS

DUT

RINGL RINGS

R sense

Residual current

after theCLP200M

Peak

waveform

current

I

(A)

P

4.2

1.1

R = 50 Ohms

I1

GND

t(µs)

1

0.5

-48V

Fig.35 : Relativevariation of switching-onvoltage
versusdV/dt with an externalresistor of 4 Ω.

SWON / REFV

V

1.12

1.10

1.08

1.06

1.04

1.02

1.00

0.98

0.1 0.3 1 3 10 30 100 300 1000

dV/dt (V/µs)

Fig. 36 : Relative variation of internal reference

voltageversusjunctiontemperature (I

REF [Tj°C] /V [25°C]REF

V

1.10

1.05

1.00

0.95

0.90

0.85

-40 -20 0 20 40 60

Tj (°C)

=1mA).

LG



15/21

CLP200M

Fig.37 : Junctioncapacitance(TIPL/GND)versus

appliedvoltage

C (pF)

220
200
180
160
140
120
100

80
60
40

0 102030405060

(V)

V

R

Fig. 39 : Maximum non repetitive surge RMS on

state current versus overload duration (with 50Hz
sinusoidal wave and initial junction temperature
equal to 25°C)

ITSM (A)

100

10

Fig. 38 : Typical and maximal capacitance

between TIPL, RINGL and GND.
V TIPL= - 48V

V RINGL# 0V
V GND= 0 V

Capacitance

between

RINGLand

GND

Capacitance

between

TIPL and

GND

Capacitance

between

TIPLand

RINGL

Typ. 195 62 57

Max. 200

Fig. 40 : Maximum peak pulse current versus

surgeduration

Ipp (A)

300
200

100

1

t (s)

0.1

0.1 1 10 100 1000

16/21

50

30
20

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10



t (ms)

CLP200M

SOLDERINGRECOMMENDATION

The soldering process causes considerable ther­mal stress to a semiconductor component. This
has to be minimized to assure a reliable and ex­tended lifetime of the device. The PowerSO-10

TM

packagecan be exposed to a maximum tempera­ture of 260°C for 10 seconds. However a proper
soldering of the packagecould be done at 215°C
for 3 seconds. Any solder temperature profile
shouldbe within these limits. As reflowtechniques
are most common in surface mounting, typical
heating profiles are given in Figure 1,either for
mountingon FR4 or on metal-backedboards. For
each particular board, the appropriateheat profile
has to be adjusted experimentally. The present
proposalisjustastartingpoint.Inanycase,the fol­lowingprecautionshaveto be considered:

- alwayspreheat the device

- peaktemperatureshouldbeat least30 °C
higherthan the meltingpointof the solder
alloychosen

- thermalcapacityof the basesubstrate

Voids pose a difficult reliability problem for large

Fig1 : Typical reflowsoldering heat profile

Temperature ( C)

250

o

o

245 C

surfacemountdevices.Suchvoidsunderthe pack­age result in poor thermal contact and the high
thermal resistance leads to component failures.
The PowerSO-10 is designed from scratch to be
solely a surfacemount package,hencesymmetry
in the x- and y-axis gives the package excellent
weightbalance.Moreover, the PowerSO-10offers
the unique possibility to control easily the flatness
and quality of the soldering process. Both the top
and the bottomsolderededges of the packageare
accessible for visual inspection (soldering menis­cus).
Coplanarity between the substrate and the pack­agecanbeeasilyverified.The quality of the solder
joints is very important for two reasons : (I) poor
qualitysolder jointsresultdirectlyin poor reliability
and (II) solder thickness affects the thermal resis­tance significantly. Thus a tight control of this pa­rameter results in thermally efficient and reliable
solderjoints.

o

215 C

200

Soldering

Cooli ng

150

Epoxy FR4

board

Preheating

100

Metal-backed

50

board

0

0 40 80 120 1 60 200 240 280 320 360

Time (s )



17/21

CLP200M

SUBSTRATES ANDMOUNTINGINFORMATION

The use of epoxy FR4 boardsis quite commonfor
surface mounting techniques, however, their poor
thermalconductioncompromises the otherwise
outstandingthermalperformanceof the PowerSO-

10. Some methods to overcomethis limitation are
discussedbelow.

One possibility to improvethe thermal conduction
is the use of large heat spreaderareasat thecop­perlayerof the PCboard.Thisleadsto a reduction
of thermal resistance to 35 °C for 6 cm

2

of the

boardheatsink(seefig. 2).
Use ofcopper-filledthroughholesonconventional

FR4 techniqueswill increase the metallizationand

Fig2 :

Mountingon epoxyFR4 headdissipationbyextendingthe areaof the copperlayer

Copper foil

decrease thermal resistance accordingly. Using
a configurationwith 16holesunderthe spreaderof
thepackage with a pitchof1.8mmanda diameter
of 0.7 mm, the thermal resistance (junction ­heatsink) can be reduced to 12°C/W (see fig. 3).
Besidethe thermaladvantage,thissolutionallows
multi-layer boards to be used. However, a draw­back of this traditional material prevent its use in
veryhighpower, highcurrentcircuits.For instance,
it is not advisable to surface mount devices with
currents greater than 10 A on FR4 boards. A
PowerMosfetor Schottkydiodeinasurfacemount
power package can handle up to around 50 A if
bettersubstratesareused.

FR4 board

Fig3 :

18/21

Mountingon epoxy FR4 by usingcopper-filledthroughholes for heat transfer

Copperfoil

heattransferheatsink



FR4board

CLP200M

A newtechnologyavailabletodayis IMS - anInsu­lated Metallic Substrate. This offers greatly en­hanced thermal characteristics for surface
mount components.IMS is a substrate consisting
of threedifferentlayers,(I)thebasematerialwhich
is availableas an aluminiumor a copper plate, (II)
a thermal conductive dielectrical layer and (III) a
copper foil, which can be etched as a circuitlayer.
Using this material a thermal resistance of 8°C/W
with 40 cm

2

of board floating in air is achievable

(seefig.4). If evenhigherpoweristobe dissipated

Fig 4 : Mounting onmetalbacked board

Copper foil

Aluminium

Insulation

an externalheatsink could be appliedwhich leads
to an R
that R

(j-a) of 3.5°C/W (see Fig. 5), assuming

th

(heatsink-air) is equal to Rth(junction-

th

heatsink). This is commonly applied in practice,
leading to reasonable heatsink dimensions. Often
power devices are defined by considering the
maximum junction temperature of the device. In
practice, however,this is farfrombeingexploited.
A summary of various power management capa­bilities is made in table 1 based on a reasonable
delta T of 70°Cjunctionto air.

Fig 5 :

Mounting on metal backed board with an

externalheatsinkapplied

Copperfoil

Aluminium

heatsink

FR4boar d

The PowerSO-10 concept also represents an at­tractive alternative to C.O.B. techniques. Pow­erSO-10offers devices fully testedat lowand high
temperature. Mounting is simple - only conven­tionalSMTisrequired- enablingtheuserstoget rid

thehigh temperaturesoft solderingaswell.Anop­timized thermal management is guaranteed
through PowerSO-10 as the power chips must in
any case be mounted on heat spreaders before
beingmounted onto the substrate.

of bond wire problems and the problem to control

TABLE1 : THERMALIMPEDANCEVERSUS SUBSTRATE

PowerSo-10packagemountedon Rth(j-a) PDiss (*)

1.FR4usingtherecommendedpad-layout 50°C/W 1.5 W

2

2.FR4withheatsink on board (6cm

3.FR4withcopper-filledthroughholes and externalheatsink applied

2

4. IMSfloatinginair (40cm

)8°C/W 8.8W

)35°C/W 2.0 W

12°C/W 5.8 W

5. IMSwithexternalheatsinkapplied 3.5 °C/W 20 W

(*)Basedon a delta Tof70 °Cjunction train.



19/21

CLP200M

PACKAGEMECHANICALDATA

10

B

0.10 A B

6

H

A1

Q

E3 E1

SEATING

PLANE

A
C

a

SEATING

PLANE

A1

L

E2E

1

eB

0.25 M

h

A

F

E4

5

DETAIL”A”

D

D1

DETAIL”A”

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 3.35 3.65 0.131 0.143

A1 0.00 0.10 0.00 0.0039

B 0.40 0.60 0.0157 0.0236
C 0.35 0.55 0.0137 0.0217
D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.299

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.299

MARKING

Package Type Marking

Power SO-10

20/21

TM

CLP200M CLP200M

DIMENSIONS

REF.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.05

F 1.25 1.35 0.0492 0.0531

H 13.80 14.40 0.543 0.567

h 0.50 0.019
L 1.20 1.80 0.0472 0.0708

Q 1.70 0.067

a0° 8°0° 8°



ORDERCODE

CurrentLimiting Protection

FOOTPRINT
MOUNTINGPAD LAYOUT

RECOMMENDED

CLP200M

CLP 200 M - TR

TR = tapeand reel

= tube

Package: PowerSO-10

Minimumoperation voltage

HEADERSHAPE

Dimensionsin millimeters Dimensionsinmillimeters

SHIPPINGTUBE

C

DIMENSIONS(mm)

TYP

B

A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsibility for the
consequences of use of such information nor forany infringement of patents or other rights of thirdparties which may result from its use. No
license is granted by implication orotherwise under any patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject tochange withoutnotice.This publication supersedesand replaces all information previouslysupplied.
SGS-THOMSONMicroelectronics products are notauthorized for useas criticalcomponentsin lifesupportdevices orsystemswithoutexpress
writtenapproval of SGS-THOMSON Microelectronics.

 1998SGS-THOMSON Microelectronics - Printedin Italy -All rights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia- Brazil- Canada -China - France -Germany - Italy- Japan - Korea -Malaysia - Malta - Morocco

The Netherlands - Singapore - Spain- Sweden - Switzerland - Taiwan- Thailand - UnitedKingdom - U.S.A.



A
B
C
Lengthtube

18
12

0,8

532

Quantityper tube 50

21/21