Datasheet CLM4429EY, CLM4429EP, CLM4429CY, CLM4420EY, CLM4420EP Datasheet (Calogic LLC)

CORPORATION

300mV

CLM4420 / CLM4429

OUTPUT

INPUT

GND

4.7V

500

µ

V

DD

EFFECTIVE

INPUT

C = 38pF

1L-13

High Speed

MOSFET Drivers

CLM4420 / CLM4429

FEATURES

Latch Up Prote c ted . . . . . . . . . . . . . . . . . . . . . . . . . >1.5A

••

Logic Input Swing . . . . . . . . . . . . . . . . . . . . . Negative 5V

••

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV

••

Matched Rise and Fall Time s. . . . . . . . . . . . . . . . . . 20ns

••

APPLICATIONS

Motor Cont ro ls

••

Switch-Mode Power Supplies

••

Pulse Transformer Driver

••

Class D Sw i tc hing Amplifie rs

••

FUNCTIONAL DIAGRAM AND PIN CONFIGURATI O N S

DIP

V

1

DD

2

INPUT

3

NC

45

GND

8
7
6

V

DD

OUTPUT
OUTPUT
GND

DESCRIPTION

The CLM4420 and CLM4429 family operate over 4.5 V to 18V,
can withstand high current peaking of 6A and have matched
rise and fall times under 25ns. The product has been
designed utilizing Calogic’s rugged CMOS process with
protection for latch up and ESD. The product is available in
inverting (CLM4429) and noninverting (CLM4420) conf igurations.

ORDERING INFORMATION
Part# Logic Package Temperature Range

o

CLM4420CP Noninverting 8-Pin PDIP 0
CLM4420EP Noninverting 8-Pin PDIP -40
CLM4420CY Noninverting 8-Pin SOIC 0
CLM4420EY Noninverting 8-Pin SOIC -40
CLM4429CP Inverting 8-Pin PDIP 0
CLM4429EP Inverting 8-Pin PDIP -40
CLM4429CY Inverting 8-Pin SOIC 0
CLM4429EY Inverting 8-Pin SOIC -40

SOIC

V

1

DD

2

INPUT

3

NC

45

GND

8
7
6

V

DD

OUTPUT
OUTPUT
GND

C to +70oC

o

C to +85oC

o

C to +70oC

o

C to +85oC

o

C to +70oC

o

C to +85oC

o

C to +70oC

o

C to +85oC

1A-08

1A-07

CALOG IC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, T elephone: 510-656-2900, FAX: [phone]

CLM4420 / CLM429

CORPORATION

ABSOLUTE MAXIMUM RATINGS

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to >V

DD

Input Curr ent (VIN > VDD). . . . . . . . . . . . . . . . . . . . . . . . 50mA

Power Dissipation, T

≤ 25oC

A

PDIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Derating Fact or s (To Ambient )

PDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/

SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/

Storage Temperature Ra nge. . . . . . . . . . . . -55

o

C to +150oC

Operating Temperature (Chip). . . . . . . . . . . . . . . . . . . +150

Operating Temperature Ra n ge (Am bient )

C Version . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0

E Version . . . . . . . . . . . . . . . . . . . . . . . . . . -40

o

C to +70oC

o

C to +85oC

Lead Temperature (Soldering , 10 sec) . . . . . . . . . . . . +300

o

C

o

C

o

C

o

C

ELECTRICAL CHARACTERISTICS: TA = +25oC with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS

Static-sensitive device. Unused devices must be stored in
conductive material. Protect devices from static discharge
and static fields. Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only and funct iona l operat ion
of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for
extended-p e riod s may affe c t device re liab ility.

INPUT

V

IH

V

IL

V

(Max) Input Voltage Range -5 VDD+0.3 V

IN

I

IN

OUTPUT

V

OH

V

OL

R

O

R

O

I

PK

I

REV

SWITCHING TIME (Note 1)

t

R

t

F

t

D1

t

D2

POWER SUPPLY

I

S

V

DD

Logic 1 High Input Voltage 2.4 1.8 V
Logic 0 Low Input Voltage 1.3 0.8 V

Input Current -10 10 µA 0V ≤ VIN ≤ V

High Output Voltage VDD-0.025 V See Figure 1
Low Output Voltage 0.025 V See Figure 1
Output Resistance, High 2.1 2.8 Ω I
Output Resistance, Low 1.5 2.5 Ω I
Peak Output Current 6 A VDD = 18V (See Figure 5)
Latch-Up Protection

Withstand Reverse Current

Rise Time 25 35 ns Figure 1, CL = 2500pF
Fall Time 25 35 ns Figure 1, CL = 2500pF
Delay Time 20 40 ns Figure 1
Delay Time 20 40 ns Figure 1

Power Supply Current

Operating Input Voltage 4.5 18 V

>1.5 A

1

55

1.5

150

mA

µA

DD

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

Duty Cycle ≤ 2%
t ≤ 300µA

V

= 3V

IN

V

= 0V

IN

CALOG IC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, T elephone: 510-656-2900, FAX: [phone]

CLM4420 / CLM4429

CORPORATION

ELECTRICAL CHARACTERISTICS:
Measured over operating temperature range with 4.5V ≤ V

SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS

INPUT

≤ 18V, unless otherwise specified.

DD

V

IH

V

IL

V

(Max) Input Voltage Range -5 VDD+0.3 V

IN

I

IN

Logic 1 High Input Voltage 2.4 V
Logic 0 Low Input Voltage 0.8 V

Input Current -10 10 µA 0V ≤ VIN ≤ V

OUTPUT

V

OH

V

OL

R

O

R

O

High Output Voltage VDD-0.025 V See Figure 1
Low Output Voltage 0.025 V See Figure 1
Output Resistance, High 3 5 Ω I
Output Resistance, Low 2.3 5 Ω I

SWITCHING TIME (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time 32 60 ns Figure 1, CL = 2500pF
Fall Time 34 60 ns Figure 1, CL = 2500pF
Delay Time 20 50 ns Figure 1
Delay Time 20 50 ns Figure 1

POWER SUPPLY

I

S

V

DD

Power Supply Current

Operating Input Voltage 4.5 18 V

1

60

3

400

mA

µA

S

= 10mA, VDD = 18V

OUT

= 10mA, VDD = 18V

OUT

V

= 3V

IN

V

= 0V

IN

Note: 1. Switchi ng times guarante ed by design.

FIGURE 1. SWITCHING TIME TEST CIRCUI T

VDD= 18V

INPUT

0.1

0.1

µF

18

µF

2

45

0.1

µF

6

7

OUTPUT

= 2500pF

C

L

1A-09

+5V

INPUT

≈0.4V

+18V

OUTPUT

10%

t

t

D1

F

90%

100kHz, SQUARE WAVE,INPUT:
t

RISE

10%

= t

≤ 10nS

FALL

0V

90%

t

D2

10%

t

R

90%

1A-10

CALOG IC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, T elephone: 510-656-2900, FAX: [phone]

CLM4420 / CLM4429

TIME (ns)

FALL TIME vs

SUPPLY VOLTAGE

100

0

5

15

1L-15

VDD(V)

80

60

40

20

7

91113

C = 2200 pF

L

C = 4700 pF

L

C = 10,000 pF

L

TIME (ns)

RISE TIME vs

CAPACITIVE LOAD

100

10

1000 10,000

1L-17

40

20

CAPACITVE LOAD (pF)

80
60

V = 5V

DD

V = 12V

DD

V = 18V

DD

TYPICAL CHARACTERISTICS CURVES

RISE TIME vs

120

100

80

SUPPLY VOLTAGE

C = 10,000 pF

L

CORPORATION

60

TIME (ns)

40

20

0

5

7

C = 4700 pF

L

C = 2200 pF

L

91113

VDD(V)

RISE AND FALL TIMES

50

40

30

20

TIME (ns)

10

0

vs TEMPERATURE

CL= 2200pF
VDD= 18V

t

FALL

t

RISE

-20 20 60 100

-60 140
TA(˚C)

15

1L-14

1L-16

100

80
60

40

TIME (ns)

20

10

1000 10,000

CALOG IC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, T elephone: 510-656-2900, FAX: [phone]

FALL TIME vs

CAPACITIVE LOAD

V = 5V

DD

V = 12V

DD

V = 18V

DD

CAPACITVE LOAD (pF)

1L-18

PROPAGATION DELAY TIME

vs SUPPLY VOLTAGE

65

60

55

t

50

45

DELAY TIME (ns)

40

35

4

D2

t

D1

618

8 10121416

SUPPLY VOLTAGE (V)

1A-16

CORPORATION

THERMAL DERATING CURVE

1L-19

AMBIENT TEMPERATURE (˚C)

0 20 40 60 80 100 120

1600
1400
1200
1000

800
600
400
200

0

MAX. POWER (mW)

8 DIP
8 SOIC
8 CerDIP

TYPICAL CHARACTERISTICS CURVES (Cont . )

CLM4420 / CLM4429

PROPAGATION DELAY TIME

50

40

30

20

DELAY TIME (ns)

10

0

vs TEMPERATURE

CL= 2200pF

= 18V

V

DD

t

D2

t

D1

-60 140

-20 20 60 100
TA(˚C)

SUPPLY CURRENT

1000

100

vs FREQUENCY

= 2200pF

C

L

18V
10V
5V

1A-17

SUPPLY CURRENT

vs CAPACITY LOAD

VDD= 15V

500kHz

200kHz

0

0 10,000

100 1000

CAPACITIVE LOAD (pF)

SUPPLY CURRENT (mA)

84

70

56

42

28

14

20kHz

1A-18

SUPPLY CURRENT (mA)

)

Ω

(

OUT

R

2.5

1.5

10

0

0 10,000

100 1000

FREQUENCY (kHz)

1A-19

LOW-STATE OUTPUT

RESISTANCE

2

1

515

7 9 11 13

100mA

VDD(V)

50mA

10mA

1A-23

)

Ω

(

R

OUT

HIGH-STATE OUTPUT

5

4

3

2

515

RESISTANCE

50mA

100mA

10mA

7 9 11 13

V

(V)

DD

1A-22

CALOG IC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, T elephone: 510-656-2900, FAX: [phone]

CLM4420 / CLM4429

TOTAL nA•S CROSSOVER*

4

0

515

1A-25

3

2

1

7 9 11 13

6 8 10 12 14

SUPPLY VOLTAGE (V)

CROSSOVER AREA (A

•

S)

×

10

-9

* The values on this graph represent the loss seen
by the driver during one complete cycle. For a
single transition, divide the value by 2.

DIE SIZE 76 X 77 (INCHES)

DD

IN

V

OUT

GND

OUT

GND

GND

DD

V

TYPICAL CHARACTERISTICS CURVES (Cont . )

EFFECT OF INPUT AMPLITUDE

ON PROPAGATION DELAY

200

LOAD = 2200pF

160

120

INPUT 2.4V

CORPORATION

80

DELAY TIME (ns)

40

0

INPUT 3V

INPUT 5V

INPUT 8V AND 10V

515

7 9 11 13

6 8 10 12 14

V

(V)

DD

1A-24

CALOG IC CORPOR ATION, 237 Whitney Place, Fremont, California 94539, T elephone: 510-656-2900, FAX: [phone]

DIE SIZE 76 X 77 (mm)